Nb-doped TiO2 Thin Films Prepared through TiCl4 Treatment for Improvement of Their Carrier Transport Property

MRS Advances ◽  
2019 ◽  
Vol 4 (49) ◽  
pp. 2665-2671
Author(s):  
Takaki Kimura ◽  
Kan Hachiya ◽  
Takashi Sagawa
Keyword(s):  
Thin Films ◽  
Carrier Transport ◽  
Rutile Phase ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Hall Effect Measurements ◽  
Acidic Conditions ◽  
Nb Doping ◽  
Niobium Ethoxide

ABSTRACTNb-doped TiO2 thin-films were prepared on fluorine-doped tin oxide (FTO) coated glass directly with niobium ethoxide and TiCl4 in water under the acidic conditions with several concentrations of HCl at 70-90 °C for 45 minutes or 1 hour followed by rinsing with water and annealing at 100 °C for 1 hour. Thin films of 0-1% Nb-doped TiO2 with rutile phase on FTO were obtained, which were confirmed through X-ray diffraction analyses and measurements of energy dispersive X-ray spectroscopy (EDS). Scanning electron microscopy observations equipped with EDS revealed that higher growth temperature over 90 °C is required for doping of Nb. While higher concentration of HCl resulted in much amount of Nb-doping. Band gap of rutile TiO2 gradually reduced from 3.3 eV to 3.23 eV through Nb-doping from 0% to 1%, which were estimated from uv-vis absorption spectroscopic analyses. Hall effect measurements by taking van der Pauw method confirmed that 2.26 times increase of the carrier density and 1.78 times enhancement of the conductivity have been achieved in the case of 1% Nb-doping.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Enhanced Photoelectrocatalytic Activity of Oriented Rutile TiO2 Nanorod Array Film through Nb Doping

2014 ◽  
Vol 1010-1012 ◽  
pp. 195-201
Author(s):  
Meng Lei Chang ◽  
Dong Chu Chen ◽  
Xiu Fang Ye ◽  
Xin Jun Li ◽  
Liang Peng Wu ◽  
...  
Keyword(s):  
Electrochemical Impedance ◽  
Linear Sweep Voltammetry ◽  
Nanorod Array ◽  
Rutile Phase ◽  
Electrode System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conductive Glass ◽  
Nb Doping ◽  
Oxidation Of Glucose

TiO2 nanorod array films with or without Nb doping grown directly on transparent conductive glass (FTO) were prepared by a facile hydrothermal method. The films were characterized by means of field emission scanning electron microscopy (FE-SEM) with energy-dispersive x-ray spectra (EDS), X-ray diffraction (XRD) and the X-ray photoelectron spectroscoy (XPS). The electrochemical impedance spectroscopy (EIS), linear sweep voltammetry (LSV) and transient photocurrent were investigated in a three-electrode system with TiO2 nanorod array film served as the photoanode. The photoelectrocatalytic activity of the films was evaluated by the oxidation of glucose under UV irradiation. The results show that both the pure and Nb-doped TiO2 nanorods perpendicularly grown on FTO substrate are rutile phase. The resistance of the TiO2 nanorod array photoanode is decreased significantly by Nb doping. The steady-state photocurrent (iss) for glucose oxidation at Nb-doped TiO2 nanorod array film is much higher than that at the pure one. The enhanced photoelectrocatalytic activity of the Nb-doped TiO2 nanorods could be attributed to the enhanced charge transport ability.

STUDIES ON THE TiO2 THIN FILMS DOPED WITH Fe3+

2005 ◽  
Vol 19 (01n03) ◽  
pp. 671-673
Author(s):  
PENG XIAO ◽  
WANLU WANG
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electrical Properties ◽  
Sol Gel ◽  
Experimental Results ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Gel Method ◽  
X Ray ◽  
Nanometer Particles

The Fe 3+- TiO 2 thin films obtained through sol-gel method were characterized by x-ray diffraction, AFM and Raman spectroscopy. It was found that TiO 2 films consisted of nanometer particles. The experimental results shows that the nanometer TiO 2 thin films doped with Fe 3+ were greatly improved in the activity aspect. This may be ascribed to change their structure and electrical properties after doping with Fe 3+. The results were discussed theoretically in detail.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

IIIB- Nitride Semiconductors for High Temperature Electronic Applications

1999 ◽  
Vol 572 ◽  
Author(s):  
X. Bai ◽  
D. M. Hill ◽  
M. E. Kordesch
Keyword(s):  
Thin Films ◽  
Nitrogen Pressure ◽  
Atomic Nitrogen ◽  
Nitride Semiconductors ◽  
Infrared Transmission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Evaporation ◽  
Hall Effect Measurements ◽  
High Temperature Electronic

ABSTRACTThin films of ScN and YN were grown on silicon, quartz and sapphire using metal evaporation and an RF atomic nitrogen source. YN decomposes on contact with water vapor, and only AlN capped films could be stabilized. ScN is stable in air and water, and thin films of this material deposited at temperatures between 300 and 900 °C show a substrate-dependent film texture. Typical growth rates were ∼ 0.1 nm/second with a 300W N discharge at about 0.1 mTorr Nitrogen pressure. Structural characterization by x-ray diffraction, infrared transmission spectroscopy and Hall effect measurements on n-type ScN and the fabrication of p-n junctions of n- type ScN with silicon are presented.

Properties of Cu2ZnSnS4 thin films prepared by magnetron sputtering and sulfurizing the precursors with different stacking sequences

2014 ◽  
Vol 28 (26) ◽  
pp. 1450210 ◽  
Author(s):  
Zhong Hua ◽  
Xiangcheng Meng ◽  
Yaming Sun ◽  
Wanqiu Yu ◽  
Dong Long
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Stacking Order ◽  
Microstructure Morphology ◽  
Hall Effect Measurements ◽  
Uv Visible

The stacked precursors were deposited on glass substrates from Cu , Sn and ZnS targets by magnetron sputtering with six kinds of stacking sequences. The precursors were sulfurized at 500°C for 2 h in an atmosphere of sulfur. The properties of thin films such as microstructure, morphology, chemical composition, electrical and optical properties of the films were investigated by X-ray diffraction (XRD), scanning election microscopy (SEM), energy dispersive spectroscopy (EDS), Hall effect measurements and UV-visible spectrophotometer (UV-VIS). The results show that the thin film after sulfurizing at 500°C using the stacking order of Cu / Sn / ZnS /glass is the best absorber layer for Cu 2 ZnSnS 4 thin films solar cell among the six kinds of stacking sequences.

scholarly journals Influence of Tin Doped TiO2 Nanorods on Dye Sensitized Solar Cells

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6282
Author(s):  
Sandeep B. Wategaonkar ◽  
Vinayak G. Parale ◽  
Sawanta S. Mali ◽  
Chang-Kook Hong ◽  
Rani P. Pawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Dye Sensitized Solar Cells ◽  
Rutile Phase ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
X Ray ◽  
Dye Sensitized ◽  
The One ◽  
Energy Conversion Devices

The one-step hydrothermal method was used to synthesize Sn-doped TiO2 (Sn-TiO2) thin films, in which the variation in Sn content ranged from 0 to 7-wt % and, further, its influence on the performance of a dye-sensitized solar cell (DSSC) photoanode was studied. The deposited samples were analyzed by X-ray diffraction (XRD) and Raman spectroscopy, which confirmed the existence of the rutile phase of the synthesized samples with crystallite size ranges in between 20.1 to 22.3 nm. In addition, the bare and Sn-TiO2 thin films showed nanorod morphology. A reduction in the optical band gap from 2.78 to 2.62 eV was observed with increasing Sn content. The X-ray photoelectron spectroscopy (XPS) analysis confirmed Sn4+ was successfully replaced at the Ti4+ site. The 3-wt % Sn-TiO2 based DSSC showed the optimum efficiency of 4.01%, which was superior to 0.87% of bare and other doping concentrations of Sn-TiO2 based DSSCs. The present work reflects Sn-TiO2 as an advancing material with excellent capabilities, which can be used in photovoltaic energy conversion devices.

Structural and Optical Properties of Pulse Laser Deposited TiO2 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 224-228
Author(s):  
Yi Liu ◽  
Hong Mo Huang ◽  
Xiao Dong Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Crystalline Structure ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Quartz Glasses

TiO2 thin films were prepared on quartz glasses by pulsed laser deposition (PLD) using a KrF laser excimer. The crystalline structure was characterized by X-ray diffraction, and the optical properties of the films were investigated using spectroscopic ellipsometry and UV-vis spectra respectively. The effects of the PLD conditions, including substrate temperature and O2 pressure on the crystalline structure and the optical properties of the films were investigated. The results indicated that there are a suitable substrate temperature and an O2 pressure which is favorable for the synthesis of anatase-type TiO2.

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