Domain structures in Pb(Zr, Ti)O3 and PbTiO3 thin films

1997 ◽  
Vol 12 (10) ◽  
pp. 2612-2616 ◽  
Author(s):  
L. D. Madsen ◽  
E. M. Griswold ◽  
L. Weaver
Keyword(s):  
Thin Films ◽  
Classification Scheme ◽  
Sol Gel ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Grain Sizes ◽  
Domain Structures ◽  
Transmission Electron ◽  
20 Nm ◽  
Gel Processing

The microstructure of Pb(Zr, Ti)O3 (PZT) and PbTiO3 (PT) thin films deposited by the sol-gel method and chemical vapor deposition, respectively, were examined by transmission electron microscopy (TEM). Domains with ∼7 and ∼20 nm widths were found for the PZT and PT thin films, respectively. The traditional parallel twin or wedge-type structures found in bulk ceramics have been observed in thin films. Differences between observed grain sizes and previous studies of similar compounds (in bulk form) are accounted for by geometrical considerations related to crystallographic factors. Finally, a classification scheme for domains in PZT and PT thin films based on these and other published results of several researchers is presented. Domain sizes varied according to three categories: mono-domains (2–50 nm in diameter), domains in spherulite lamellae (28–130 nm wide), and twins in conventional large grains (5–150 nm wide). The mono-domains are related to small grain sizes, while the lamellae are a function of the nucleation and growth associated with sol-gel processing.

Sol-gel processing of nanocrystalline haematite thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Single Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Gel Processing

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.

Size Effects and Domains in Ferroelectric Thin Film Actuators

1996 ◽  
Vol 433 ◽  
Author(s):  
S. Trolier-Mckinstry ◽  
C. A. Randall ◽  
J. P. Maria ◽  
C. Theis ◽  
D. G. Schlom ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Domain Walls ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Grain Sizes ◽  
Average Grain Size ◽  
Ferroelectric Domains ◽  
Gel Processing

AbstractFerroelectric thin films typically differ from bulk ceramics in terms of both the average grain size and the degree of stress imposed on the film by the substrate. Studies on bulk ceramics have demonstrated that the number of domain variants within grains depends on the grain size for sizes <˜lμm. This can diminish the poling efficiency of the material. Since most thin films show primary grain sizes well below a micron, similar effects should be observed in films. In addition, since the perovskite ferroelectrics contain ferroelastic as well as ferroelectric domains, it seems clear that stress in thin films may markedly alter the degree to which domain walls contribute to the observed properties. In this paper, the relative importance of these factors are discussed for several types of ferroelectric thin films. Films have been prepared by pulsed laser deposition, magnetron sputtering, and by sol-gel processing. It has been found that epitaxial BaTiO3 films are ferroelectric at 77K down to thicknesses as low as ˜ 60nm. Data on the low and high field electrical properties are reported as a function of temperature, the film crystallinity, and film thickness for representative perovskite films.

Study on Microstructure and Ferroelectricity of Strontium Barium Titanate Thin Films Prepared by Sol-Gel Processing

2013 ◽  
Vol 320 ◽  
pp. 202-207 ◽  
Author(s):  
Lian Wei Shan ◽  
Lai Guo Wang ◽  
Wei Li ◽  
Li Min Dong ◽  
Zhi Dong Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Chelating Agent ◽  
Frequency Dispersion ◽  
Bst Thin Films ◽  
Transmission Electron ◽  
Bst Thin Film ◽  
Inclined Angle ◽  
Gel Processing

Sr0.5Ba0.5-xBixTiO3 (SBT) thin films were fabricated on a Pt/SiO2/Si substrate by sol-gel method. The effects of chelating agent acetylacetone (HAcHAc) on the formation temperature and the microstructure of Sr0.5Ba0.5-xBixTiO3 (SBT) thin films were investigated in this paper. The microstructure of BST thin films was examined by XRD and TEM. It is found that Bi3+ doping decreases dielectric loss, improves frequency dispersion for BST thin films. The peak of temperature-dependence of dielectric constant of Bi3+-doped BST thin films is compressed and moves to a low-temperature region. An inclined angle of approximately 1.8o between the two different polarization vectors was observed for BST thin film from the results of high-resolution transmission electron microscopy (HRTEM). The Pr, Ps and Ec was 0.22μC/cm2, 0.72μC/cm2 and 60Kv/cm respectively for Sr0.5Ba0.485Bi0.015TiO3 thin film at 100Hz, 20V.

Role of Pb excess in the crystallization of lead zirconate titanate films derived via sol-gel processing

2003 ◽  
Vol 18 (6) ◽  
pp. 1405-1411 ◽  
Author(s):  
Randolph N. Jacobs ◽  
L. Salamanca-Riba
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Annealing Step ◽  
Gel Processing

Sol-gel spin coating of lead-titanate films differs from most processing routes, such as metalorganic chemical vapor deposition and pulsed laser deposition, in that crystallization cannot occur without a postdeposition annealing step. This work focuses on the annealing of sol-gel-derived PbZrTiO3 films on LaAlO3 substrates in attempts to identify the precise conditions necessary to grow films of quality similar to that obtained through other techniques. In particular, the effects of Pb excess (in precursor solutions), annealing times, and temperature were investigated through transmission electron microscopy and four-circle x-ray diffraction. The significance of this work is in the direct observation of the correlation between Pb excess and film crystallization. It is shown that the effects of Pb excess on the completeness of film crystallization become more dramatic at lower annealing temperatures, even while epitaxial quality is maintained.

On the Role of the Underlying Microstructure on the Mechanical Properties of Microelectromechanical Systems (MEMS) Materials

2000 ◽  
Vol 657 ◽  
Author(s):  
G. F. Dirras ◽  
G. Coles ◽  
A. J. Wagner ◽  
S. Carlo ◽  
C. Newman ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Mechanical Properties ◽  
Microelectromechanical Systems ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Transmission Electron ◽  
Columnar Grains ◽  
Pressure Chemical ◽  
20 Nm

ABSTRACTThe microstructure of Low Pressure Chemical Vapor Deposition (LPCVD) Polycrystalline silicon (Polysilicon) thin films was investigated by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and Auger electron spectroscopy (AES). SEM characterization of tensile tested samples showed a brittle like-rupture, along with grooves located at the surface sides of the sample. TEM investigations of as-deposited samples showed equiaxed or fully columnar grains bridging from the bottom to the top of the films. A microstructural coarsening was observed with annealing. In the as-deposited state, the films exhibited a {110} texture as showed by the XRD analysis. The films' top and bottom surfaces were observed to be smooth with a roughness (standard deviation) of about 11nm and 20 nm respectively. A chemical analysis of the thin films showed the presence of carbon and oxygen impurities on the surface and oxygen through the sample as observed in the depth profile. The hypothetical influence of these findings is subsequently discussed in relation to the measured mechanical properties.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Structure and electrical properties of CuAlO2 thin films derived by sol–gel processing

2010 ◽  
Vol 22 (6) ◽  
pp. 666-671 ◽  
Author(s):  
Si-Jia Liu ◽  
Hua Wang ◽  
Ji-Wen Xu ◽  
Ming-Fang Ren ◽  
Ling Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Processing

Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

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