High-temperature stability of epitaxial, non-isostructural Mo/NbN superlattices

2000 ◽  
Vol 15 (2) ◽  
pp. 554-559 ◽  
Author(s):  
C. Engström ◽  
A. Madan ◽  
J. Birch ◽  
M. Nastasi ◽  
L. Hultman ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ternary Phase ◽  
Vacuum Annealing ◽  
Temperature Stability ◽  
Mutual Solubility ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Intensity ◽  
Superlattice Peak

The effect of 1000 °C vacuum annealing on the structure and hardness of epitaxial Mo/NbN superlattice thin films was studied. The intensity of superlattice satellite peaks, measured by x-ray diffraction, decreased during annealing while new peaks corresponding to a MoNbN ternary phase appeared. The results are consistent with the Mo–Nb–N phase diagram, which shows no mutual solubility between Mo, NbN, and MoNbN. Even after 3-h anneals and a loss of most of the superlattice peak intensity, the room-temperature hardness was the same as for as-deposited superlattices. The retained hardness suggests that a residual nanocomposite structure is retained even after the formation of the ternary structure.

High Temperature Stability of Amorphous TaxCu1-x Diffusion Barriers on GaAs

1986 ◽  
Vol 77 ◽  
Author(s):  
J. E. Oh ◽  
J. J. Pouch ◽  
D. C. Ingram ◽  
S. A. Alterovitz ◽  
J. A. Woollam
Keyword(s):  
Elevated Temperatures ◽  
Alloy Composition ◽  
Vacuum Annealing ◽  
Temperature Stability ◽  
Diffusion Barriers ◽  
Maximum Temperature ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Coefficients

ABSTRACTThe x value of the most thermally stable co-sputtered TaxCu1-x alloy films are found to correlate with measured maximum temperature coefficients of resistance as a function of alloy composition. To investigate the possible application of these materials as diffusion barriers for the Au-GaAs system, vacuum annealing and infrared rapid thermal annealing are made over a wide temperature range. Resistivity changes, X-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering measurements are performed to find the metallurgical stabilities of these materials at elevated temperatures.For high x values, the reaction temperature for TaxCu1-x, in contact with GaAs lies between 500 and 700°C. For Au in contact with TaxCu1-x the TaxCu1-x/GaAs reaction occurs at about 600°C. Amorphous Ta93Cu7 exhibits uniform mixing with surrounding elements, whereas Ta80Cu20 exhibits phase separation.

Crystalline and Electrical Properties of Ferroelectric Silver Niobate-tantalate thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Jung-Hyuk Koh ◽  
S.I. Khartsev ◽  
Alex Grishin ◽  
Vladimir Petrovsky
Keyword(s):  
Temperature Stability ◽  
Frequency Dispersion ◽  
Processing Temperature ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
Ferroelectric State ◽  
X Ray ◽  
Ferroelectric Hysteresis ◽  
First Time

AbstractFor the first time AgTa0.38Nb0.62O3 (ATN) films have been grown on the La0.7Sr0.3CoO3 (LSCO)/LaAlO3 single crystal as well as onto Pt80Ir20 (PtIr) polycrystalline substrate. Comprehensive X-ray diffraction analyses reveal epitaxial quality of ATN and LSCO films on the LaAlO3(001) substrate, while ATN/PtIr films have been found to be (001) preferentially oriented. Dielectric spectroscopy performed for ATN films and bulk ceramics in a wide temperature range 77 to 420 K shows the structural monoclinic M1-to-monoclinic M2 phase transition occurs in films at the temperature 60 °C lower than in ceramics. The tracing of the ferroelectric hysteresis P-E loops indicates the ferroelectric state in ATN films at temperatures below 125 K and yields remnant polarization of 0.4 μC/cm2 @ 77 K. Weak frequency dispersion, high temperature stability of dielectric properties as well as low processing temperature of 550 °C make ATN films to be attractive for various applications.

scholarly journals High Temperature Stability of Amorphous Zn-Sn-O Transparent Conductive Oxides Investigated by In Situ TEM and X-ray Diffraction

2016 ◽  
Vol 22 (S3) ◽  
pp. 1582-1583
Author(s):  
Q. Jeangros ◽  
M. Duchamp ◽  
E. Rucavado ◽  
F. Landucci ◽  
C. Spori ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stability ◽  
In Situ Tem ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
Transparent Conductive Oxides ◽  
X Ray

High Temperature Stability of Superconducting YBa2CU3Ox as Characterized by X-ray Diffraction

1988 ◽  
pp. 351-357
Author(s):  
M. O. Eatough ◽  
T. L. Aselage ◽  
K. D. Keefer ◽  
D. S. Ginley ◽  
B. Morosin
Keyword(s):  
High Temperature ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
X Ray

High-Temperature Stability of Lead Zinc Niobate: In Situ X-Ray Diffraction

2010 ◽  
Vol 93 (11) ◽  
pp. 3902-3907 ◽  
Author(s):  
James V.> Shanahan ◽  
Erich H. Kisi ◽  
Jennifer S. Forrester ◽  
Heather J. Goodshaw ◽  
Jennifer S. Zobec ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lead Zinc Niobate ◽  
Lead Zinc

scholarly journals Ni-Mn-Ga films in the austenite and the martensite structures at room temperature: Uniaxial texturation and epitaxial growth

2009 ◽  
Vol 1200 ◽  
Author(s):  
Jérémy Tillier ◽  
Antinéa Einig ◽  
Daniel Bourgault ◽  
Philippe Odier ◽  
Luc Ortega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Vacuum Annealing ◽  
Sacrificial Layer ◽  
Epitaxial Films ◽  
Fiber Texture ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Scanning Electron

AbstractNi-Mn-Ga films in the austenite and the martensite structures at room temperature have been obtained using the DC magnetron sputtering technique. Two elaboration processes were studied. A first batch of samples was deposited using a resist sacrificial layer in order to release the film from the substrate before vacuum annealing. This process leads to polycrystalline films with a strong (022) fiber texture. The martensitic phase transformation of such polycrystalline freestanding films has been studied by optical and scanning electron microscopy. A second batch of samples was grown epitaxially on (100)MgO substrates using different deposition temperatures. The texture has been analyzed with four-circle X-ray diffraction. Epitaxial films crystallized both in the austenite and the martensite structures at room temperature have been studied.

scholarly journals A Cr3+ luminescence study of natural topaz Al2SiO4(F,OH)2 up to 60 GPa

2019 ◽  
Vol 104 (11) ◽  
pp. 1656-1662
Author(s):  
Earl F. O'Bannon ◽  
Quentin Williams
Keyword(s):  
High Pressure ◽  
Room Temperature ◽  
Temperature Stability ◽  
Luminescence Spectroscopy ◽  
Stability Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Earth ◽  
Large Pressure ◽  
Compression Mechanism

Abstract Topaz [Al2SiO4(F,OH)2] is a subduction-related mineral that is found in metasediments and has a large pressure and temperature stability field. Here, we use luminescence spectroscopy of Cr3+ to probe the Al site in topaz at pressures up to ~60 GPa, which corresponds to a depth of ~1400 km in the Earth. This technique allows us to probe all three unique Al environments (i.e., [AlO4(OH)2]7–, [AlO4(F)2]7–, and [AlO4OH,F]7–) simultaneously under high pressure. We find that the R-line luminescence from all three Al environments shift linearly to longer wavelength to ~40 GPa. Above ~40 GPa, they shift nonlinearly and begin to flatten out at ~48 GPa, with a pressure shift of ~0 cm–1/GPa from ~48–55 GPa. Our results, combined with previous high-pressure single-crystal X-ray diffraction studies to ~45 GPa, strongly indicate that there is a change in the compression mechanism in topaz above ~40 GPa. Our high-pressure room-temperature results show that the metastable persistence of topaz on compression represents one of the most extreme cases among tetrahedrally coordinated silicates.

Synthesis of AnataseTiO2 Having High Specific Surface Area from a Gel Precursor

2011 ◽  
Vol 485 ◽  
pp. 279-282
Author(s):  
Keiko Fukushi ◽  
Sae Nakajima ◽  
Kazuyoshi Uematsu ◽  
Tadashi Ishigaki ◽  
Kenji Toda ◽  
...  
Keyword(s):  
Specific Surface ◽  
Surface Area ◽  
Specific Surface Area ◽  
Temperature Stability ◽  
High Specific Surface Area ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
Dialysis Treatment ◽  
X Ray ◽  
Transmission Electron

Anatase TiO2 having high temperature stability and specific surface area was synthesized using a gel precursor in very mild conditions. The precursor gel was obtained by dialysis treatment of Na16Ti10O28–HNO3 solution. The samples were characterized by X-ray diffraction analysis, transmission electron microscopy, Brunner–Emmett–Teller method for specific surface area measurements, and thermogravimetric analysis.

High Temperature Stability of Superconducting YBa2 Cu30x as Characterized by X-Ray Diffraction

1987 ◽  
Vol 31 ◽  
pp. 351-357
Author(s):  
M. O. Eatough ◽  
T. L. Aselage ◽  
K. D. Keefer ◽  
D. S. Ginley ◽  
B. Morosin
Keyword(s):  
Single Phase ◽  
Temperature Stability ◽  
Lattice Parameters ◽  
High Temperature Stability ◽  
X Ray Diffraction ◽  
Critical Temperatures ◽  
X Ray ◽  
Lower Oxygen ◽  
The Subject ◽  
Number Of Authors

The recent discovery of superconducting oxide ceramics with critical temperatures (Tc) near 100°K has stimulated research at an unprecedented pace. Single phase YBa2 Cu30x (x = 6.9), the subject of most of the interest, is an oxygen deficient 1:1:3 stacked perovskite derivative, (The structure of this materials has been described by a number of authors, many of whom are referenced by Jorgensen et al.) At room temperture it has an orthorhombic structure with lattice parameters near: a = 3.82Å, b = 3.88Å, and c - 11.68 Å. At lower oxygen values (x≤6.5) the structure is tetragonal with lattice parameters near: a = 3.86 and c = 11.80. It has been suggested that tetragonal YBa2 Cu30x is not superconducting. YBa2 Cu30x, regardless of oxygen content, is referred to here as 123.

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