Structure–property correlation of nanostructured WO3 thin films produced by electrodeposition

2004 ◽  
Vol 19 (9) ◽  
pp. 2576-2585 ◽  
Author(s):  
M. Deepa ◽  
A.K. Srivastava ◽  
S. Singh ◽  
S.A. Agnihotry

Nanocrystalline tungsten oxide (WO3) films were electrodeposited potentiostatically at room temperature on transparent conducting substrates from an ethanolic solution of acetylated peroxotungstic acid prepared from a wet chemistry process. The changes that occur in the microstructure and the grain size of the as-deposited WO3 films as a function of annealing temperature are simultaneously accompanied by a continually varying electrochromic performance. X-ray diffraction studies revealed the transformation of a nanocrystalline as-deposited WO3 film into a highly crystalline triclinic WO3 as the annealing temperature was raised from room temperature to 500 °C. The microstructural evolution with the increasing annealing temperature of the as-deposited film was further exemplified by transmission electron microscopy (TEM) studies. While the as-deposited film was composed of uniformly distributed ultra fine nanograins, the most noticeable feature seen in these films annealed at 250 °C was the presence of open channels which are believed to promote lithium ion motion. Films annealed at 400 °C exhibited coarse grains with prominent grain boundaries that hinder lithium ion movement, which in turn reduces the film’s ion insertion capacity. In concordance with the TEM results, the 250 °C film had the highest ion storage capacity as it exhibited a charge density of 67.4 mC cm−2 μm−1. The effect of microstructure was also reflected in the high transmission modulation (64%) and coloration efficiency (118 cm2 C−1) of the 250 °C film at 632.8 nm. Contrary to the superior electrochromic performance of the 250 °C film, the optical switching speeds between the colored and bleached states of the as-deposited WO3 film declined considerably as a function of annealing temperature. Also, the diffusion coefficient for lithium ions was greater by at least an order of magnitude for the as-deposited film as compared to the 250 and 500 °C films. In this report, the influence of microstructural changes that are brought about by the annealing of the as-deposited WO3 films on their coloration-bleaching dynamics is evaluated in terms of their structural, electrochromic, and electrochemical properties.

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 317 ◽  
Author(s):  
Haihong Yin ◽  
Changqing Song ◽  
Zhiliang Wang ◽  
Haibao Shao ◽  
Yi Li ◽  
...  

VO2(B), VO2(M), and V2O5 are the most famous compounds in the vanadium oxide family. Here, their gas-sensing properties were investigated and compared. VO2(B) nanoflakes were first self-assembled via a hydrothermal method, and then VO2(M) and V2O5 nanoflakes were obtained after a heat-phase transformation in nitrogen and air, respectively. Their microstructures were evaluated using X-ray diffraction and scanning and transmission electron microscopies, respectively. Gas sensing measurements indicated that VO2(M) nanoflakes were gas-insensitive, while both VO2(B) and V2O5 nanoflakes were highly selective to ammonia at room temperature. As ammonia sensors, both VO2(B) and V2O5 nanoflakes showed abnormal p-type sensing characteristics, although vanadium oxides are generally considered as n-type semiconductors. Moreover, V2O5 nanoflakes exhibited superior ammonia sensing performance compared to VO2(B) nanoflakes, with one order of magnitude higher sensitivity, a shorter response time of 14–22 s, and a shorter recovery time of 14–20 s. These characteristics showed the excellent potential of V2O5 nanostructures as ammonia sensors.


1992 ◽  
Vol 286 ◽  
Author(s):  
John Q. Xiao ◽  
J. Samuel ◽  
C. L. Chien

ABSTRACTWe have studied the structure of the Co-Ag granular system across the entire composition range, as well as the annealed samples, using transmission electron microscopy (TEM) and x-ray diffraction. GMR, as much as 80% at 5K and 25% at room temperature, have been observed. The absolute values of the resistivity (ρ) and the change of the resistivity (δρ) as functions of the magnetic Co concentration and the annealing temperature have been determined. A linear relation between δρ and I/rco, where rco is Co particle size, has been found. This result suggests that the magnetic scattering at the interfaces is crucial to GMR.


2010 ◽  
Vol 638-642 ◽  
pp. 2938-2943 ◽  
Author(s):  
A.V. Mogilatenko ◽  
Frank Allenstein ◽  
M.A. Schubert ◽  
Meiken Falke ◽  
G. Beddies ◽  
...  

Thin Ni/Al and Ni/Ga layers of different atomic ratios were codeposited onto Si(001) at room temperature followed by subsequent annealing. Influence of annealing temperature on morphology and composition of ternary disilicide NiSi2-xAlx and NiSi2-xGax layers was investigated by transmission electron microscopy. Addition of Al or Ga leads to a decrease of the disilicide formation temperature from 700°C down to at least 500°C. Depending on the composition closed, uniformly oriented NiSi2-xAlx and NiSi2-xGax layers were observed after annealing at 900°C, whereas reaction of a pure Ni film with Si leads to the island formation with a mixture of A- and B-type orientations.


2005 ◽  
Vol 494 ◽  
pp. 13-18
Author(s):  
Velimir Radmilović ◽  
D. Mitlin ◽  
U. Dahmen

We show that it is possible to use high rate co-evaporation of Al and Si onto room temperature substrates to achieve a novel two-phase nanoscale microstructure. These nanocomposites have a hardness as high as 4GPa (Al-23at.%Si), and display noticeable plasticity. Films with compositions of Al-12at.%Si and pure Al (used as baseline) were analyzed using transmission electron microscopy (TEM). The scale of the Al-12at.%Si microstructure is an order of magnitude finer compared to that of pure Al films. It consists of a dense distribution of spherical nanoscale Si particles separating irregularly-shaped small Al grains. These new structures may have a mechanical performance advantage over conventional single phase nanomaterials due to the role of the dispersed hard phase in promoting strain hardening.


2011 ◽  
Vol 44 (5) ◽  
pp. 991-998 ◽  
Author(s):  
B. Roy ◽  
O. Mondal ◽  
D. Sen ◽  
J. Bahadur ◽  
S. Mazumder ◽  
...  

The influence of annealing on crystal growth and the micro- and mesoscopic structures of Mn-substituted nanocrystalline zinc oxide (ZnO) has been investigated using X-ray diffraction, high-resolution transmission electron microscopy and small-angle neutron scattering (SANS). Average particle sizes and their distributions have been estimated from scattering experiments as well as a microscopy study, and found to be in the nanometre range. The SANS study indicates that the fractal dimension, which describes the nature of the agglomerate, is almost unchanged up to an annealing temperature of 1023 K. However, at 1223 K, the fractal dimension increases to 3. An attempt has also been made to understand the influence of the annealing temperature on the growth of the structural morphology of the aggregates by performing a simulation based on a diffusion-limited aggregate model. By showing the variation of the band gap estimated from UV–visible absorption spectra with particle size, an attempt has been made to establish a structure–property correlation.


2008 ◽  
Vol 22 (01n02) ◽  
pp. 63-69 ◽  
Author(s):  
J. S. PAN ◽  
J. W. CHAI ◽  
S. J. WANG ◽  
J. G. TAO ◽  
C. H. A. HUAN

The annealing effects on the composition, structure and magnetism for Co overlayer deposited onto rutile TiO 2 (100) surfaces at room temperature has been investigated. Room temperature ferromagnetic behaviour is exhibited for all samples, but saturation magnetic moment per Co atom decreases with increasing annealing temperature until 530°C. In-situ photoemission studies show that the reduction of the saturation magnetic moment is due to Co oxidation at high annealing temperature. However, the saturation magnetic moment increases after annealing the sample up to 700°C. The formation of a Co - Ti - O phase rather than Co metallic clusters observed by high-resolution transmission electron microscopy is suggested to be responsible for the increase of the saturation magnetic moment.


2011 ◽  
Vol 239-242 ◽  
pp. 2835-2838
Author(s):  
Yun Kai Qi ◽  
Jian Jun Gu ◽  
Li Hu Liu ◽  
Hui Yuan Sun

Al doped ZnO films have been prepared by dc magnetron sputtering. These films were annealed in different atmosphere and temperature. The crystal structures were analyzed by x-ray diffraction (XRD), and the magnetic properties were measured by a Physical Properties Measurement System (PPMS) with the magnetic field paralleled to the films plane. The results show the microstructure and magnetic properties were influenced by annealing atmosphere. Compared to the films annealed in vacuum, the films annealed in air shows obvious room temperature ferromagnetism, the magnetic moment increases about an order of magnitude. The room temperature ferromagnetism may be associated with a charge transfer between Al and Zn and the variational position of Al in ZnO films in different annealing ambience.


2014 ◽  
Vol 28 (27) ◽  
pp. 1450216 ◽  
Author(s):  
Jindong Liu ◽  
Wanyu Ding ◽  
Hualin Wang ◽  
Shimin Liu ◽  
Weiwei Jiang ◽  
...  

At room temperature, titanium dioxide ( TiO 2) films were deposited by the direct current pulse magnetron sputtering technique. Varying O 2/ Ar flow ratio, TiO 2 films with different nanocrystalline structures were obtained. The high resolution transmission electron microscopy results show that with O 2/ Ar = 6/14, the nanocrystalline in rutile phase appears in as-deposited film. Then X-ray diffraction patterns of annealed films revealed that with O 2/ Ar = 6/14, the higher weight fractions of rutile TiO 2 appear in films. The optical emission spectroscopy results show that with O 2/ Ar < 6/14, O element was mainly existed as O -/ O + ions, instead of excited state of O atoms.


2005 ◽  
Vol 475-479 ◽  
pp. 3725-3728
Author(s):  
Xiao Bai Chen ◽  
Hong Qiu ◽  
Hao Qian ◽  
Ping Wu ◽  
Feng Ping Wang ◽  
...  

185 nm-thick Ni76Fe24 films were deposited on SiO2/Si(100) substrates at room temperature by DC magnetron co-sputtering and they were annealed in a vacuum of 5×10-4 Pa at 300 , 400 and 480 °C for 1 hour, respectively. The as-deposited film grows with thin columnar grains and has void networks in the grain boundaries. As the annealing temperature increases, the grain size gradually increases and the void networks decrease. Besides, the void networks shorten and widen with annealing temperature. The resistivity of the film decreases with increasing annealing temperature. The magnetic hysteresis loop of the as-deposited film shows a hard magnetization requiring a saturation field of 1050 Oe while that of the film annealed at 480 °C represents an easy magnetization. For the film annealed at 480 °C the coercivity is 78 Oe and the ratio of remanent magnetization to saturation magnetization is 0.72. The as-deposited and annealed films have an isotropic magnetization characteristic.


Author(s):  
Joseph J. Comer

Domains visible by transmission electron microscopy, believed to be Dauphiné inversion twins, were found in some specimens of synthetic quartz heated to 680°C and cooled to room temperature. With the electron beam close to parallel to the [0001] direction the domain boundaries appeared as straight lines normal to <100> and <410> or <510> directions. In the selected area diffraction mode, a shift of the Kikuchi lines was observed when the electron beam was made to traverse the specimen across a boundary. This shift indicates a change in orientation which accounts for the visibility of the domain by diffraction contrast when the specimen is tilted. Upon exposure to a 100 KV electron beam with a flux of 5x 1018 electrons/cm2sec the boundaries are rapidly decorated by radiation damage centers appearing as black spots. Similar crystallographio boundaries were sometimes found in unannealed (0001) quartz damaged by electrons.


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