Characterization of biofunctional thin films deposited by activated vapor silanization

2008 ◽  
Vol 23 (7) ◽  
pp. 1931-1939 ◽  
Author(s):  
María Arroyo-Hernández ◽  
José Pérez-Rigueiro ◽  
Ana Conde ◽  
Aurelio Climent ◽  
Raul Gago ◽  
...  
Keyword(s):  
High Surface ◽  
Chemical Characterization ◽  
Chemical Vapor ◽  
Surface Concentration ◽  
Oxidation States ◽  
Secondary Amines ◽  
Organic Films ◽  
Silicon Substrates ◽  
Thin Organic Films

A novel technique based in the combination of vapor silanization and chemical vapor deposition, hereafter referred to as activated vapor silanization (AVS), is shown to be an effective biofunctionalization technique. The AVS process results in thin organic films with a high surface amine concentration when deposited on substrates with different chemical characteristics, such as silicon, porous silicon, or gold. Chemical characterization shows that the films are composed of carbon (hydrocarbon, C–Si, C–C), silicon (different oxidation states), nitrogen (primary and secondary amines), oxygen, and hydrogen. Relevantly, the amines are also distributed along the film thickness, ensuring functionality even after some degradation of the films. AVS films behave practically as monocrystalline silicon substrates under loading–unloading tests. In addition, the AVS films behave as permeable membranes for molecules smaller than 5 Å, and the amine surface concentration is estimated to be 8 NH2/nm2 for molecules of about 12 Å, which is three times higher than that obtained with standard silanization procedures.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Charge Densities ◽  
Doped Silicon

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.

Infrared ellipsometry characterization of conducting thin organic films

2004 ◽  
Vol 455-456 ◽  
pp. 295-300 ◽  
Author(s):  
M. Schubert ◽  
C. Bundesmann ◽  
G. Jakopic ◽  
H. Maresch ◽  
H. Arwin ◽  
...  
Keyword(s):  
Organic Films ◽  
Infrared Ellipsometry ◽  
Thin Organic Films

Preparation and Characterization of Chromium Containing amorphous Hydrogenated Carbon Films (A-C:H/Cr)

1995 ◽  
Vol 388 ◽  
Author(s):  
R. Gampp ◽  
P. Gantenbein ◽  
P. Oelhafen
Keyword(s):  
Chromium Carbide ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Amorphous Hydrogenated Carbon ◽  
High Chemical Stability

AbstractChromium containing amorphous hydrogenated carbon films (a-C:H/Cr) were prepared in a process that combines rf plasma activated chemical vapor deposition of methane and magnetron sputtering of a chromium target. During the deposition the silicon substrates were kept at 200°C and dc biased at -200 V in order to obtain films with high chemical stability which is required for the application as solar selective surfaces. the films with different Cr concentrations (5 to 49 at.%) were characterized by in situ x-ray photoelectron spectroscopy (XPS). Up to 40 at.%, chromium proves to be built into the cermet-like films in the form of chromium carbide clusters. above 40 at.%, chromium is partly metallic. a modification of the a-C:H matrix in the vicinity of the chromium carbide clusters has been observed.

scholarly journals Iron removal from ground water using Egyptian cost-effective clay minerals

2020 ◽  
Vol 3 (1) ◽  
pp. 23
Author(s):  
Hamdy Maamoun Abdel-Ghafar ◽  
ElSayed Abdel-Aal ◽  
Bahgat El_anadouli
Keyword(s):  
High Surface ◽  
High Surface Area ◽  
Chemical Characterization ◽  
Statistical Design ◽  
Cost Effective ◽  
Iron Removal ◽  
Optimum Conditions ◽  
Physical And Chemical Characterization ◽  
Physical And Chemical

Glauconite and kaolin are used as adsorbent materials for iron removal from synthetic solutions. Different concentrations of iron solutions have been prepared (10, 20 and 30 mg/L). Different dose of glauconite and kaolin were added (0.1, 0.55 and 1.0 g). Statistical design was used to determine the optimum conditions of iron adsorption on glauconite and kaolin. It is shown that glauconite has high adsorption for iron reaching to 95% while kaolin has lower adsorption for iron. Physical and chemical characterization of glauconite and kaolin was tested. High surface area of glauconite (19.8 m2/g) compared to kaolin (5.4 m2/g) explains its high removal efficiency. 

In-Situ Preparation and Characterization of Superconducting Thin Films and Related Materials by Mocvd for the Development of Three Terminal Switching Devices

1989 ◽  
Vol 169 ◽  
Author(s):  
R. Singh ◽  
S. Sinha ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
High Temperature Superconductor ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Superconducting Thin Films ◽  
In Situ Preparation ◽  
In Situ Deposition ◽  
Rapid Isothermal Processing

AbstractMetalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the fabrication of high temperature superconductor devices. In this paper, we present preliminary results of in-situ deposition of Y-Ba-Cu-0 thin films (Tc = 79K) by rapid isothermal processing assisted MOCVD on BaF2/silicon substrates.

Micromachined Silicon Grids for Direct TEM Characterization of Carbon Nanotubes Grown by CVD

2006 ◽  
Vol 963 ◽  
Author(s):  
Yongho Choi ◽  
Jason Johnson ◽  
Ryan Moreau ◽  
Eric Perozziello ◽  
Ant Ural
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Back Side ◽  
Post Processing ◽  
Tem Analysis ◽  
Micro Raman Spectroscopy

ABSTRACTTransmission electron microscopy (TEM) is a key technique in the structural characterization of carbon nanotubes. For device applications, carbon nanotubes are typically grown by chemical vapor deposition (CVD) on silicon substrates. However, TEM requires very thin samples, which are electron transparent. Therefore, for TEM analysis, CVD grown nanotubes are typically deposited on commercial TEM grids by post-processing. This procedure has two problems: It can damage the nanotubes, and it does not work reliably if the nanotube density is too low. The ability to do TEM directly on as-grown nanotubes lying on the silicon substrate would solve these two problems. In this work, for this purpose, we have fabricated micromachined TEM grids from silicon substrates. In particular, we have wet-etched large membranes from the back side of silicon wafers with a thin layer of thermal oxide on them. We have then etched a large array of long and narrow open slits on these membranes from the top side using a deep silicon etcher. Subsequently, we have grown nanotubes on these micromachined TEM grids by CVD, and characterized the nanotubes by high resolution TEM (HRTEM), micro-Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). Since the nanotubes grown on the micromachined substrates are completely suspended over the width of the open slits, these substrates form a natural TEM grid for direct imaging of CVD-grown nanotubes. Furthermore, the signal from the substrate is significantly reduced during micro-Raman spectroscopy, resulting in a better signal-to-noise ratio. In addition, the silicon membranes are strong enough to support AFM and SEM characterization. As a result, these substrates provide a low cost, mass producible, efficient, and reliable platform for direct TEM, Raman, AFM, and SEM analysis of as-grown nanotubes or other nanomaterials on the same substrate, eliminating the need for any post-processing after CVD growth.

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