Preparation of ZnO:Mo Thin Films by RF Sputtering

ABSTRACTBased on the electron configurations of Mo and Zn, the valence electron difference between Mo6+ and Zn2+ is 4. Therefore, a small amount of Mo doping can produce sufficient free carriers to reduce the ion scattering effects. The Mo doped ZnO (MZO) thin film prepared by RF sputtering was studied in this research. Structural, electrical, and optical characteristics of the films were discussed. The MZO film shows a resistivity of 1.1 × 10-2 Ω⋅cm, a carrier concentration of 2.2 × 1021 cm-3,a mobility of 0.63 cm2/V⋅s, and average transparency of 81.0% at both the powers of 20 W to the Mo target and of 125 W to the ZnO target. The MZO film becomes a stable p-type semiconductor at high power process toward Mo target. The film preserves its p-type characteristics after exposure to air for one and a half months. The crystal structure of the p-ZnO films is amorphous with an average transparency of 34.5%.

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Change in polarity of zinc oxide films grown on sapphire substrates without insertion of any buffer layer

Journal of Materials Research ◽

10.1557/jmr.2008.0404 ◽

2008 ◽

Vol 23 (12) ◽

pp. 3269-3272 ◽

Cited By ~ 22

Author(s):

Yutaka Adachi ◽

Naoki Ohashi ◽

Tsuyoshi Ohnishi ◽

Takeshi Ohgaki ◽

Isao Sakaguchi ◽

...

Keyword(s):

Zinc Oxide ◽

Zno Films ◽

Ion Scattering ◽

Ceramic Target ◽

Interfacial Phase ◽

Sapphire Substrates ◽

Zinc Oxide Films ◽

Ion Scattering Spectroscopy ◽

Doped Zno ◽

Polarity Change

We have investigated the polarity of zinc oxide (ZnO) and Al-doped ZnO films grown on (11¯20) and (0001) sapphire substrates, using coaxial impact collision ion scattering spectroscopy. The films grown by pulsed laser deposition with a nominally undoped ZnO ceramic target had a (000¯1) surface, whereas the films prepared with a 1 mol% Al-doped ZnO ceramic target had a (0001) surface. The usage of Al-doped and undoped targets caused no difference in the in-plane lattice orientation. Electron microscope observations revealed that polarity change due to doping occurred without the formation of any interfacial phase between ZnO and sapphire.

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Synthesis, crystal structure and thermoelectric properties of a new metal telluride Ba3Ag3InTe6

Inorganic Chemistry Frontiers ◽

10.1039/c7qi00210f ◽

2017 ◽

Vol 4 (9) ◽

pp. 1458-1464 ◽

Cited By ~ 2

Author(s):

M.-Y. Lee ◽

D. I. Bilc ◽

E. Symeou ◽

Y.-C. Lin ◽

I.-C. Liang ◽

...

Keyword(s):

Crystal Structure ◽

Transport Properties ◽

Valence Band ◽

Thermoelectric Properties ◽

Type Semiconductor ◽

P Type

A new p-type semiconductor Ba3Ag3InTe6 with transport properties dominated by the layer [Ag3Te4]5− distributed in the valence band.

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Electronic Structure of P-Doped ZnO Films with p-Type Conductivity

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2006.17953 ◽

2006 ◽

Vol 6 (11) ◽

pp. 3422-3425

Author(s):

Veeramuthu Vaithianathan ◽

Jong Ha Moon ◽

Chang-Hwan Chang ◽

Kandasami Asokan ◽

Sang Sub Kim

Keyword(s):

Electronic Structure ◽

Xanes Spectrum ◽

Sharp Decrease ◽

Zno Films ◽

Charge Neutrality ◽

Edge Structure ◽

X Ray ◽

Doped Zno ◽

P Type ◽

X Ray Absorption

The electronic structure of laser-deposited P-doped ZnO films was investigated by X-ray absorption near-edge structure spectroscopy (XANES) at the O K-, Zn K-, and Zn L3-edges. While the O K-edge XANES spectrum of the n-type P-doped ZnO demonstrates that the density of unoccupied states, primarily O 2p–P 3sp hybridized states, is significantly high, the O K-edge XANES spectrum of the p-type P-doped ZnO shows a sharp decrease in intensity of the corresponding feature indicating that P replaces O sites in the ZnO lattice, and thereby generating PO. This produces holes to maintain charge neutrality that are responsible for the p-type behavior of P-doped ZnO. Both the Zn K-, and Zn L3-edge XANES spectra of the P-doped ZnO reveal that Zn plays no significant role in the p-type behavior of ZnO:P.

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P-Type Characteristic of Nitrogen-Doped ZnO Films

Journal of Electronic Materials ◽

10.1007/s11664-018-6468-2 ◽

2018 ◽

Vol 47 (9) ◽

pp. 5607-5613 ◽

Cited By ~ 7

Author(s):

Zi-Neng Ng ◽

Kah-Yoong Chan ◽

Shahruddin Muslimin ◽

Dietmar Knipp

Keyword(s):

Zno Films ◽

Nitrogen Doped ◽

Doped Zno ◽

P Type

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Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

Crystals ◽

10.3390/cryst9040204 ◽

2019 ◽

Vol 9 (4) ◽

pp. 204 ◽

Cited By ~ 2

Author(s):

Xingyou Chen ◽

Zhenzhong Zhang ◽

Yunyan Zhang ◽

Bin Yao ◽

Binghui Li ◽

...

Keyword(s):

Oxygen Vacancy ◽

Molecular Beam ◽

Green Emission ◽

Growth Conditions ◽

Oxygen Radical ◽

Zno Films ◽

Nitrogen Doped ◽

Hall Effect Measurements ◽

Doped Zno ◽

P Type

Nitrogen-doped ZnO thin films were grown on a-plane Al2O3 by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy.

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P-Type Conductive Behaviors of AlN Co-Doped ZnO Films Deposited by the Atomic Layer Deposition

Supplemental Proceedings ◽

10.1002/9781118357002.ch3 ◽

2012 ◽

pp. 19-25

Author(s):

Yu-Mi Kim ◽

Kwang-Seok Jeong ◽

Ho-Jin Yun ◽

Seung-Dong Yang ◽

Sang-Youl Lee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Zno Films ◽

Layer Deposition ◽

Doped Zno ◽

P Type ◽

Co Doped

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P-type Nitrogen Doped ZnO Films Grown By Thermal Evaporation

MRS Proceedings ◽

10.1557/proc-1201-h02-08 ◽

2009 ◽

Vol 1201 ◽

Cited By ~ 1

Author(s):

Wei Mu ◽

Lei Guo ◽

Lei Kerr ◽

David C. Look

Keyword(s):

Growth Process ◽

Thermal Evaporation ◽

Critical Role ◽

Zno Films ◽

Electrical And Optical Properties ◽

Nitrogen Doped ◽

Chemical Reaction Mechanism ◽

Doped Zno ◽

Thermal Evaporation Deposition ◽

P Type

AbstractWe report the formation of p-type nitrogen doped ZnO (ZnO:N) grown by thermal-evaporation deposition. The effects of nitrogen precursors on the electrical and optical properties of ZnO:N were investigated. This study shows that growth process plays a critical role in the electrical properties of ZnO:N. The chemical reaction mechanism was analyzed.

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p-type in ZnO:N by codoping with Cr

MRS Proceedings ◽

10.1557/proc-786-e6.1 ◽

2003 ◽

Vol 786 ◽

Author(s):

E. Kaminska ◽

A. Piotrowska ◽

J. Kossut ◽

R. Butkute ◽

W. Dobrowolski ◽

...

Keyword(s):

Time Scale ◽

Room Temperature ◽

Surface Passivation ◽

Hole Concentration ◽

Rf Sputtering ◽

Zno Films ◽

Type Conductivity ◽

Chromium Doping ◽

P Type ◽

Over Time

ABSTRACTWe report on the fabrication of p-ZnO films by thermal oxidation of Zn3N2 deposited by reactive rf sputtering. With additional chromium doping we achieved p-type conductivity with the hole concentration ∼5×1017cm−3 and the mobility of 23.6 cm2/Vs at room temperature. We developed a method of surface passivation of p-ZnO that maintains its p-type conductivity over time-scale of months.

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