Electronic structures and optical properties of cuprous oxide and hydroxide

2014 ◽  
Vol 1675 ◽  
pp. 185-190
Author(s):  
Yunguo Li ◽  
Cláudio M. Lousada ◽  
Pavel A. Korzhavyi
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Cuprous Oxide ◽  
Density Functional ◽  
Spent Nuclear Fuel ◽  
Energy Levels ◽  
Chemical Properties ◽  
Density Functional Theory Calculations ◽  
Hybrid Functional ◽  
Indirect Band Gap

ABSTRACTThe broad range of applications of copper, including areas such as electronics, fuel cells, and spent nuclear fuel disposal, require accurate description of the physical and chemical properties of copper compounds. Within some of these applications, cuprous hydroxide is a compound whose relevance has been recently discovered. Its existence in the solid-state form was recently reported. Experimental determination of its physical-chemical properties is challenging due to its instability and poop crystallinity. Within the framework of density functional theory calculations (DFT), we investigated the nature of bonding, electronic spectra, and optical properties of the cuprous oxide and cuprous hydroxide. It is found that the hybrid functional PBE0 can accurately describe the electronic structure and optical properties of these two copper(I) compounds. The calculated properties of cuprous oxide are in good agreement with the experimental data and other theoretical results. The structure of cuprous hydroxide can be deduced from that of cuprous oxide by substituting half Cu+ in Cu2O lattice with protons. Compared to Cu2O, the presence of hydrogen in CuOH has little effect on the ionic nature of Cu–O bonding, but lowers the energy levels of the occupied states. Thus, CuOH is calculated to have a wider indirect band gap of 2.73 eV compared with the Cu2O band gap of 2.17 eV.

Ab initio study of oxygen vacancy effects on electronic and optical properties of NiO

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2617-2622 ◽  
Author(s):  
John Petersen ◽  
Fidele Twagirayezu ◽  
Pablo D. Borges ◽  
Luisa Scolfaro ◽  
Wilhelmus Geerts
Keyword(s):  
Optical Properties ◽  
Density Functional ◽  
Local Density ◽  
Optical Transition ◽  
Energy Levels ◽  
Density Functional Theory Calculations ◽  
Local Density Of States ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
O Vacancy

ABSTRACTDensity Functional Theory calculations of electronic and optical properties of NiO, with and without O vacancies, are the focus of this work. Two bands, one fully occupied and the other unoccupied, induced by an O vacancy, are found in the gap. These energy levels are identified and analyzed by means of a local density of states (LDOS) calculation, and notable crystal field splitting can be seen. The real and imaginary parts of the dielectric function are calculated, and an additional optical transition can be seen at lower energy, which can be attributed to the O vacancy induced state in the band gap.

scholarly journals First Principles Study on Electronic and Optical Properties of Quinary Copper-based Sulfides and Selenides Cu2HgGe(S1-xSex)4

2021 ◽  
Vol 37 (1) ◽  
Author(s):  
Pham Dinh Khang ◽  
Vo Duy Dat ◽  
Dang Phuc Toan ◽  
Vu Van Tuan
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Density Functional ◽  
Hybrid Functional ◽  
Electron Hole ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
Pair Separation ◽  
Electron Hole Pair ◽  
Band Transition

Electronic and optical properties of Cu2HgGe(S1-xSex)4 compounds (x = 0, 0.25, 0.5, 0.75, and 1) were revealed by density functional theory (DFT), in which the Heyd-Scuseria-Ernzerhof hybrid functional was used. Dependence of band gap on the Se constituent in Cu2HgGe(S1-xSex)4 was reported. The substitution of Se element basically cause a slightly lattice expansion and minor change of the band gap. Meanwhile, the overlap of Cu and S/Se states becomes more dense leading to better electron/hole pair separation and inter-band transition of photo-excited electrons. The Cu2HgGe(S0.75Se0.25)4 compound was predicted to be very promising absorber due to the low band gap, high absorption rate, and low reflectivity in the incoming light energy range from 0 eV to 2 eV.    

Strain-tunable electronic structure of two-dimensional monolayer SiP

2021 ◽  
pp. 2150404
Author(s):  
Xiao Han ◽  
Fan-Shun Meng ◽  
Xiao-Jie Yan ◽  
Hui Zhang
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Honeycomb Lattice ◽  
Application Range ◽  
Direct Band Gap ◽  
Direct Band ◽  
Indirect Band Gap ◽  
Armchair Direction

The 2D monolayer [Formula: see text]-SiP has a honeycomb lattice and an intrinsic indirect band gap. Herein, the density functional theory calculations are performed to modulate the electronic structure of 2D monolayer [Formula: see text]-SiP by applying strains. The band gap of monolayer [Formula: see text]-SiP is monotonously reduced by the strains. More interestingly, a direct band gap is more likely to be achieved by applying strains along the armchair direction than along the zigzag direction. Finally, 2D monolayer [Formula: see text]-SiP can possess a tunable direct band gap of 1.57–0.73 eV (HSE06) and considerable visible light absorption index, by applying compression strains of −6–−10% along the armchair direction. The work provides a route of modulating the electronic and optical properties of monolayer [Formula: see text]-SiP, which extends its application range for various fields such as electronic devices and solar energy conversion.

Electronic structures and optical properties of IV A elements-doped 3C-SiC from density functional calculations

2018 ◽  
Vol 32 (32) ◽  
pp. 1850389 ◽  
Author(s):  
Xuefeng Lu ◽  
Tingting Zhao ◽  
Xin Guo ◽  
Meng Chen ◽  
Junqiang Ren ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Electronic Structures ◽  
Density Functional ◽  
Visible Region ◽  
First Principles Calculation ◽  
Charge Difference Density ◽  
Direct Band ◽  
Density Analysis ◽  
Indirect Band Gap

Electronic structures and optical properties of IV A elements (Ge, Sn and Pb)-doped 3C-SiC are investigated by means of the first-principles calculation. The results reveal that the structure of Ge-doped system is more stable with a lower formation energy of 1.249 eV compared with those of Sn- and Pb-doped 3C-SiC systems of 3.360 eV and 5.476 eV, respectively. Doping of the IV A elements can increase the band gap, and there is an obvious transition from an indirect band gap to a direct band gap. Furthermore, charge difference density analysis proves that the covalent order of bonding between the doping atoms and the C atoms is Ge–C [Formula: see text] Sn–C [Formula: see text] Pb–C, which is fully verified by population values. Due to the lower static dielectric constant, the service life of 3C-SiC dramatically improved in production practice. Moreover, the lower reflectivity and absorption peak in the visible region, implying its wide application foreground in photoelectric devices.

Electronic and optical properties of CsPb2Br5: A first-principles study

2019 ◽  
Vol 33 (22) ◽  
pp. 1950266 ◽  
Author(s):  
Mingge Jin ◽  
Zhibing Li ◽  
Feng Huang ◽  
Weiliang Wang
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Visible Light ◽  
Band Gap ◽  
First Principles ◽  
First Principles Calculations ◽  
Hybrid Functional ◽  
Electronic And Optical Properties ◽  
Optical Absorbance ◽  
Indirect Band Gap

There are conflicting understandings of the electronic and optical properties of CsPb2Br5. We investigated the electronic and optical properties of CsPb2Br5 with first-principles calculations. It is confirmed that CsPb2Br5 is a semiconductor with an indirect band gap of 3.08 eV at GGA/PBE level and 3.72 eV at the HSE06 hybrid functional level. The PBE results demonstrate that the inclusion of SOC slightly reduces the band gap. We calculate the optical absorbance/emission spectrum of CsPb2Br5. It is found the optical absorption edges locate at 360–380 nm, shorter than the wavelength of visible light. Our results support the experimental results of Li et al. [Chem. Commun. 52 (2016) 11296] and Zhang et al. [J. Mater. Chem. C 6 (2018) 446].

The Density Functional Study of Electronic Properties for Bismuth Aluminate

2013 ◽  
Vol 873 ◽  
pp. 877-882
Author(s):  
Lian Wei Shan ◽  
Wei Li ◽  
Rui Fang ◽  
Li Min Dong ◽  
Zhi Dong Han ◽  
...  
Keyword(s):  
Band Gap ◽  
Conduction Band ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Functional Study ◽  
Functional Theory ◽  
Interaction Range ◽  
Plane Wave Method ◽  
The Density Functional Theory ◽  
Indirect Band Gap

In this paper, the density functional theory calculations on the electronic structure of BiAlO3 by using ultrasoft pseudopotential plane wave method are carried out. The results show that cubic and trigonal BiAlO3 are indirect band gap semiconductor. And their conduction band is 0.70 and 1.49 eV, respectively. The broadening antibonding interaction range in conduction band is found. It is largely responsible for the decrease in the band gap of cubic BiAlO3. It can be also found that the CB width is obviously narrowed, while the VB width is slightly broadened.

scholarly journals A band-gap database for semiconducting inorganic materials calculated with hybrid functional

2020 ◽  
Vol 7 (1) ◽  
Author(s):  
Sangtae Kim ◽  
Miso Lee ◽  
Changho Hong ◽  
Youngchae Yoon ◽  
Hyungmin An ◽  
...  
Keyword(s):  
Band Gap ◽  
Density Functional ◽  
Magnetic Ordering ◽  
Density Functional Theory Calculations ◽  
Inorganic Materials ◽  
Band Gaps ◽  
Device Performance ◽  
Photovoltaic Devices ◽  
Hybrid Functional ◽  
Functional Theory

Abstract Semiconducting inorganic materials with band gaps ranging between 0 and 5 eV constitute major components in electronic, optoelectronic and photovoltaic devices. Since the band gap is a primary material property that affects the device performance, large band-gap databases are useful in selecting optimal materials in each application. While there exist several band-gap databases that are theoretically compiled by density-functional-theory calculations, they suffer from computational limitations such as band-gap underestimation and metastable magnetism. In this data descriptor, we present a computational database of band gaps for 10,481 materials compiled by applying a hybrid functional and considering the stable magnetic ordering. For benchmark materials, the root-mean-square error in reference to experimental data is 0.36 eV, significantly smaller than 0.75–1.05 eV in the existing databases. Furthermore, we identify many small-gap materials that are misclassified as metals in other databases. By providing accurate band gaps, the present database will be useful in screening materials in diverse applications.

scholarly journals Stable GaSe-Like Phosphorus Carbide Monolayer with Tunable Electronic and Optical Properties from Ab Initio Calculations

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1937 ◽  
Author(s):  
Xiaolin Cai ◽  
Zhili Zhu ◽  
Weiyang Yu ◽  
Chunyao Niu ◽  
Jianjun Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Electronic Structures ◽  
Density Functional ◽  
Promising Candidate ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
Direct Band Gap ◽  
Direct Band ◽  
Indirect Band Gap

On the basis of density functional theory (DFT) calculations, we propose a stable two-dimensional (2D) monolayer phosphorus carbide (PC) with a GaSe-like structure, which has intriguing electronic and optical properties. Our calculated results show that this 2D monolayer structure is more stable than the other allotropes predicted by Tománek et al. [Nano Lett., 2016, 16, 3247–3252]. More importantly, this structure exhibits superb optical absorption, which can be mainly attributed to its direct band gap of 2.65 eV. The band edge alignments indicate that the 2D PC monolayer structure can be a promising candidate for photocatalytic water splitting. Furthermore, we found that strain is an effective method used to tune the electronic structures varying from direct to indirect band-gap semiconductor or even to metal. In addition, the introduction of one carbon vacancy in such a 2D PC structure can induce a magnetic moment of 1.22 µB. Our findings add a new member to the 2D material family and provide a promising candidate for optoelectronic devices in the future.

scholarly journals The Halogenation Effects of Electron Acceptor ITIC for Organic Photovoltaic Nano-Heterojunctions

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3417
Author(s):  
Yu Wang ◽  
Cairong Zhang ◽  
Bing Yang ◽  
Lihua Yuan ◽  
Jijun Gong ◽  
...  
Keyword(s):  
Electron Acceptor ◽  
Density Functional ◽  
Energy Levels ◽  
Critical Role ◽  
Density Functional Theory Calculations ◽  
Binding Energies ◽  
Molecular Engineering ◽  
Hybrid Functional ◽  
Donor And Acceptor ◽  
Electron Donor And Acceptor

Molecular engineering plays a critical role in the development of electron donor and acceptor materials for improving power conversion efficiency (PCE) of organic photovoltaics (OPVs). The halogenated acceptor materials in OPVs have shown high PCE. Here, to investigate the halogenation mechanism and the effects on OPV performances, based on the density functional theory calculations with the optimally tuned screened range-separated hybrid functional and the consideration of solid polarization effects, we addressed the halogenation effects of acceptor ITIC, which were modeled by bis-substituted ITIC with halogen and coded as IT-2X (X = F, Cl, Br), and PBDB-T:ITIC, PBDB-T:IT-2X (X = F, Cl, Br) complexes on their geometries, electronic structures, excitations, electrostatic potentials, and the rate constants of charge transfer, exciton dissociation (ED), and charge recombination processes at the heterojunction interface. The results indicated that halogenation of ITIC slightly affects molecular geometric structures, energy levels, optical absorption spectra, exciton binding energies, and excitation properties. However, the halogenation of ITIC significantly enlarges the electrostatic potential difference between the electron acceptor and donor PBDB-T with the order from fluorination and chlorination to bromination. The halogenation also increases the transferred charges of CT states for the complexes. Meanwhile, the halogenation effects on CT energies and electron process rates depend on different haloid elements. No matter which kinds of haloid elements were introduced in the halogenation of acceptors, the ED is always efficient in these OPV devices. This work provides an understanding of the halogenation mechanism, and is also conducive to the designing of novel materials with the aid of the halogenation strategy.

First-principles studies of pure and fluorine substituted alanines

2016 ◽  
Vol 30 (14) ◽  
pp. 1650079 ◽  
Author(s):  
Sardar Ahmad ◽  
Hamide Vaizie ◽  
H. A. Rahnamaye Aliabad ◽  
Rashid Ahmad ◽  
Imad Khan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Density Functional ◽  
Structural Parameters ◽  
Wide Band ◽  
Electromagnetic Spectrum ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Direct Band ◽  
Indirect Band Gap

This paper communicates the structural, electronic and optical properties of L-alanine, monofluoro and difluoro substituted alanines using density functional calculations. These compounds exist in orthorhombic crystal structure and the calculated structural parameters such as lattice constants, bond angles and bond lengths are in agreement with the experimental results. L-alanine is an indirect band gap insulator, while its fluorine substituted compounds (monofluoroalanine and difluoroalanine) are direct band gap insulators. The substitution causes reduction in the band gap and hence these optically tailored direct wide band gap materials have enhanced optical properties in the ultraviolet (UV) region of electromagnetic spectrum. Therefore, optical properties like dielectric function, refractive index, reflectivity and energy loss function are also investigated. These compounds have almost isotropic nature in the lower frequency range while at higher energies, they have a significant anisotropic nature.

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