High Transmission and Low Resistivity Cadmium Tin Oxide Thin Films Deposited by Sol-Gel

2014 ◽  
Vol 1675 ◽  
pp. 151-156 ◽  
Author(s):  
Carolina. J. Diliegros Godines ◽  
Rebeca Castanedo Pérez ◽  
Gerardo Torres Delgado ◽  
Orlando Zelaya Ángel
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Corning Glass ◽  
Vacuum Atmosphere ◽  
Xrd Patterns ◽  
Quartz Substrates

ABSTRACTTransparent conducting cadmium tin oxide (CTO) thin films were obtained from a mixture of CdO and SnO2 precursor solutions by the dip-coating sol-gel technique. The thin films studied in this work were made with 7 coats (∼200 nm) on corning glass and quartz substrates. Each coating was deposited at a withdrawal speed of 2 cm/min, dried at 100°C for 1 hour and then sintered at 550°C for 1 hour in air. In order to decrease the resistivity values of the films, these were annealed in a vacuum atmosphere and another set of films were annealed in an Ar/CdS atmosphere. The annealing temperatures (Ta) were 450°C, 500°C and 550°C, as well as 600°C and 650°C, when corning glass and quartz substrates were used, respectively. X-Ray diffraction (XRD) patterns of the films annealed in a vacuum showed that there is only the presence of CTO crystals for 450°C≤ Ta ≤ 600°C and CTO+SnO2 crystals for Ta=650°C. The films annealed in Ar/CdS atmosphere were only constituted of CTO crystals independent of the Ta. The minimum resistivity value obtained was ∼4 x 10-4 Ωcm (Rsheet= 20 Ω/□) for the films deposited on quartz and annealed at Ta=600°C under an Ar/CdS atmosphere. The films deposited on quartz showed the higher optical transmission (∼90%) with respect to the films deposited on corning glass substrates (∼85%) in the Uv-vis region. For their optical and electrical characteristics, these films are good candidates as transparent electrodes in solar cells.

LUMINESCENT PROPERTIES OF SOL-GEL DEPOSITED Eu:TiO2 THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Glass Substrates ◽  
Corning Glass ◽  
Different Temperatures ◽  
Hecd Laser

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.

scholarly journals Characteristics and optical properties of Fe3+ doped SiO2/TiO2 thin films prepared by the sol-gel dip-coating method

2013 ◽  
Vol 16 (1) ◽  
pp. 92-100
Author(s):  
Chien Mau Dang ◽  
Dam Duy Le ◽  
Tam Thi Thanh Nguyen ◽  
Dung Thi My Dang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Water Contact ◽  
Glass Substrates ◽  
Coating Method ◽  
Dip Coating Method

In this study, we have successfully synthesized Fe3+ doped SiO2/TiO2 thin films on glass substrates using the sol-gel dip-coating method. After synthesizing, the samples were annealed at 5000C in the air for 1 hour. The characteristics and optical properties of Fe3+ doped SiO2/TiO2 films were then investigated by X-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis) and Fourier transform infrared spectroscopy (FT-IR). An antifogging ability of the glass substrates coated with the fabricated film is investigated and explained by a water contact angle under visible-light. The analyzed results also show that the crystalline phase of TiO2 thin films comprised only the anatase TiO2, but the crystalline size decreased from 8.8 to 5.9 nm. We also observed that the absorption edge of Fe3+- doped SiO2/TiO2 thin films shifted towards longer wavelengths (i.e. red shifted) from 371.7nm to 409.2 nm when the Fe3+-doped concentration increased from 0 to 1 % mol.

LOWER TEMPERATURE FORMATION OF ALUMINA THIN FILMS THROUGH SOL–GEL ROUTE

2008 ◽  
Vol 15 (05) ◽  
pp. 681-688 ◽  
Author(s):  
S. RIAZ ◽  
S. SHAMAILA ◽  
B. KHAN ◽  
S. NASEEM
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Structural Changes ◽  
Sol Gel ◽  
Stable Form ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Lower Temperature ◽  
Xrd Patterns ◽  
Scanning Electron

Bayerite sol is spun onto single crystal Si substrate, after synthesis and optimization, to obtain films of thickness ~ 0.2 μm. The deposited films are room temperature dried and then heated up to a temperature of 350°C in order to obtain Al 2 O 3. Surface and structural changes, during heating, are observed with optical microscopy. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) are used for post-treatment analyses/characterization. The as-deposited and heated samples' surfaces are smooth as seen with optical and scanning electron microscope in case of optimized conditions. XRD patterns show the change from amorphous to crystalline behavior of these films when heated under various conditions. The most stable form of aluminum oxide, i.e. α- Al 2 O 3, is obtained when samples are heated up to a temperature of as low as 350°C. The thin films are also deposited onto sodalime glass substrates in order to confirm Al 2 O 3 formation through band gap probing. Photoconduction is used to find the energy band gap, which comes out to be 4.7 eV; lower value is correlated to the defect induced states in the band gap.

scholarly journals TiO2 waveguides thin films prepared by sol-gel method on glass substrates with and without ZnO underlayer

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Y. Bouachiba ◽  
A. Taabouche ◽  
A. Bouabellou ◽  
F. Hanini ◽  
C. Sedrati ◽  
...  
Keyword(s):  
Thin Films ◽  
Glass Sample ◽  
Anatase Phase ◽  
Sol Gel ◽  
Single Mode ◽  
Dip Coating ◽  
Glass Substrates ◽  
Diffraction Peaks ◽  
Xrd Patterns

AbstractTiO2 thin films have been deposited on glass substrates with and without ZnO underlayer by sol-gel dip coating process. XRD patterns show the formation of anatase phase with the diffraction lines (1 0 1) and (2 0 0) in TiO2/glass sample. In TiO2/(ZnO/glass) sample, TiO2 is composed of anatase phase with the diffraction line (2 0 0) but the diffraction peaks of ZnO wurtzite are also well-defined. The determination of the refractive index and the thickness of the waveguiding layers has been performed by m-lines spectroscopy. The thickness of TiO2 thin films deduced by Rutheford Backscattering Geometry (RBS) agrees well with that obtained by m-lines spectroscopy. TiO2/glass sample exhibits one guided TE0 and TM0 polarized modes. In TiO2/(ZnO/glass) sample, only, TE0 single mode has been excited due to cutoff condition.

EFFECT OF ANNEALING TEMPERATURE ON THE OPTICAL AND STRUCTURAL PROPERTIES OF DIP-COATED Al2O3 THIN FILMS PREPARED BY SOL–GEL ROUTE

2005 ◽  
Vol 12 (05n06) ◽  
pp. 793-797 ◽  
Author(s):  
F. E. GHODSI ◽  
M. MAFAKHERI ◽  
A. NOVINROOZ
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Sol Gel Process ◽  
Dip Coating Technique

Thin films of Al 2 O 3 were prepared by the sol–gel process. Dip-coating technique was used for deposition of the Al 2 O 3 thin films onto glass substrates. Optical and structural properties of the films were investigated with respect to the annealing temperature (100–500°C). The structure of these films was determined by X-ray diffraction (XRD). Scanning electron microscopy (SEM) was performed for the analysis of surface morphology. For determination of the optical constants of Al 2 O 3 thin films, UV-Visible spectrophotometry measurements were carried out. Annealing temperature affects the structural and optical properties of the Al 2 O 3 thin films. The refractive index and extinction coefficient of the films at 550 nm wavelength increase from 1.56 to 1.66, and from 3.41 × 10-5 to 5.54 × 10-5, respectively while optical band gap and thickness of the films decrease from 4.15 eV to 4.11 eV, and 360 nm to 260 nm, respectively, by increasing annealing temperature from 100°C to 500°C.

Morphologies and Microstructures of Antimony-Doped Tin Oxide Films Derived by Sol-Gel Dip-Coating Processing

2007 ◽  
Vol 336-338 ◽  
pp. 750-753
Author(s):  
Dao Li Zhang ◽  
Zhi Bing Deng ◽  
Liang Yan Chen ◽  
Jian Bing Zhang
Keyword(s):  
Tin Oxide ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Float Glass ◽  
Ethanol Solution ◽  
Morphological Development ◽  
Rutile Structure ◽  
Glass Substrates ◽  
Xrd Patterns

A simple laboratory technique for the routine preparation of antimony-doped tin oxide (ATO) on float glass substrates (25×76×1mm3) was described. The process employed sol-gel dip-coating approach in the absolute ethanol solution of metal salts of tin (II) chloride dehydrate and antimony trichloride. Microstructural and morphological analyses of as-prepared films were performed at different conditions. With increase of annealing temperature from 400 to 550°C, the evolution of grain size and the morphologies of ATO films were analyzed by means of atom force microscopy (AFM). The studies on the morphological development suggested that higher annealing temperature led to a decrease in the surface roughness of the deposited films. The XRD patterns revealed that as-prepared ATO films were in the crystallization of a tetragonal rutile structure of SnO2 with highly (110) preferred orientation.

Sol–Gel Synthesis of Nickel-Doped Cr2O3 Thin Films

2017 ◽  
Vol 05 (04) ◽  
pp. 1750012 ◽  
Author(s):  
Ahlam Zekaik ◽  
Hadj Benhebal ◽  
Bedhiaf Benrabah ◽  
Aziza Chibout ◽  
Nacera Tayebi ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Coating Method ◽  
Parallel Circuit ◽  
Dip Coating Method ◽  
Sol Gel Synthesis ◽  
Synthesized Materials

This work presents an experimental study dedicated to the synthesis and characterization of pure and Ni-doped chromium (III) oxide thin films. Sol–gel thin films with doping rates of 3%, 6%, 9%, and 12% were deposited onto glass substrates by the dip-coating method at room temperature using Cr(NO3)3: 9H2O as precursor. Using X-ray diffraction (XRD), infrared spectroscopy (FTIR), ultraviolet–visible spectroscopy (UV–Vis), and impedance spectroscopy on solids, we noted that the films are polycrystalline with a grain size ranging from 11.2[Formula: see text]nm to 24.4[Formula: see text]nm, the synthesized materials are highly transparent in the visible light with more than 90% of transmittance and have an optical bandgap less than 3.0[Formula: see text]eV overall, and the equivalent circuit of the deposited films is a resistors and capacitors (RC) parallel circuit.

PREPARATION OF CdIn2Se4n-TYPE SEMICONDUCTOR USED AS THERMOELECTRIC MATERIAL BY SOL–GEL METHOD

2009 ◽  
Vol 02 (04) ◽  
pp. 199-203 ◽  
Author(s):  
AUN-ANONG RUANTHON ◽  
THAPANEE SARAKONSRI ◽  
CHANCHANA THANACHAYANONT
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Alkoxides ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Coating Method ◽  
Type Semiconductor ◽  
Dip Coating Method ◽  
Cadmium Indium

The objective of this research was to study the effect of various parameters such as temperature and pH to the formation of cadmium indium selenide ( CdIn2 Se 4 ) thin films, which were fabricated by sol–gel dip-coating method. This n-type semiconductor compound is suitable for application as thermoelectric materials. Cadmium, indium, selenium precursors were separately dissolved by solvents: ethanol, hydrochloric acid, and acetic acid to form metal alkoxides. The precursor solutions were then mixed together in N 2 atmosphere. These metal alkoxides were hydrolyzed by adding water and then polycondensed by adding ethylene glycol to become gels. These gels were adjusted to various acid-base values by adding diethylnolamine. Glass substrates were dipped into the gels to form thin films. These thin films were annealed at various temperatures in N 2 atmosphere and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and fourier transfrom infrared spectroscopy (FTIR) techniques. The results indicated that CdIn2 Se 4 compound occurred by the reaction at room temperature with pH 4 and annealed at 450°C in N 2 atmosphere.

Optical Properties of Nanostructured Sol–Gel Thin Films Doped with Fe2O3 and Their Ferromagnetic Characterization by Mössbauer Spectroscopy

2008 ◽  
Vol 8 (12) ◽  
pp. 6491-6496
Author(s):  
Jorge Garcia-Macedo ◽  
Guadalupe Valverde-Aguilar ◽  
Raúl W. Gómez ◽  
José L. Pérez-Mazariego ◽  
Vivianne Marquina
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Coating Method ◽  
Dip Coating Method

Sol–gel thin films containing Fe2O3 were deposited onto glass substrates by the dip-coating method at room temperature. Fe2O3 enriched with the isotope 57Fe was embedded in two kinds of matrices: zinc oxide (ZnO) and silica (SiO2). X-ray diffraction (XRD) was used for morphology and structure determination of the nanostructures and showed that the ZnO exhibit a wurtzite form when the film is annealed at 450 °C for 20 min. SiO2 thin films at C16H33PEO20:Fe2O3 = 1:2.7 × 10−1 molar concentration exhibit a hexagonal nanophase produced by the diblock copolymer Brij58 (C16H33PEO20). Optical absorption and infrared spectroscopy techniques were used to evaluate the optical quality of the films. In order to determine if the Fe2O3 was incorporated into the matrices, room temperature Mössbauer spectra of both samples were obtained. In both cases the hematite spectrum was obtained, corroborating that the incorporation of the Fe2O3 to the matrices was done without chemical reaction whatsoever.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

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