ZITO (ZnO-SnO2-In2O3 ) Transparent Conducting Oxides: Electrical and Optical Properties of DC Magnetron Sputtered Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Cleva Ow-Yang ◽  
Hyo-Yong Yeom ◽  
Burag Yaglioglu ◽  
David C. Paine
Keyword(s):  
Visible Spectral Region ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Conducting Oxides ◽  
Glass Substrates ◽  
Sputtered Films ◽  
Transparent Conducting ◽  
Hall Effect Measurements ◽  
Deposited Films

AbstractAmorphous ZITO films were deposited by dc magnetron sputtering onto glass substrates from ceramic oxide targets containing Zn:In:Sn cation ratios of 1:2:1 and 1:2:1.5. The microstructure, carrier density, mobility, and resistivity of as-deposited and annealed samples were evaluated using x-ray diffraction and Hall effect measurements. The as-deposited films were amorphous and remained so after annealing at 200°C in air for up to five hours. Transmissivity of the films exceeded 80% in the visible spectral region. The minimum resistivity value (7.6×10−4 Ω-cm) was obtained from thin films deposited using the 1:2:1 composition target and a substrate temperature of 300°C.

Delafossite-CuAlO2 Thin Films Prepared by Thermal Annealing

2011 ◽  
Vol 13 ◽  
pp. 81-86 ◽  
Author(s):  
Hong Ying Chen ◽  
Ming Wei Tsai
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Long Time ◽  
Hot Probe ◽  
Diffraction Patterns ◽  
P Type ◽  
Deposited Films ◽  
Partial Oxygen

Transparent conducting oxides (TCOs) are well known and have been widely used for a long time in optoelectronics industries. The most popular TCOs have n-type characteristics. However p-type material is not well established and examined. The delafossite-CuAlO2 is one of the p-type TCOs. In this paper, amorphous Cu-Al-O films were deposited onto (100) p-type silicon substrate by magnetron sputtering. After that, the films were annealed at 800°C for 2 h in different partial oxygen levels ranging from 5*10-5 to 1 atm with N2, air, and O2. X-ray diffraction patterns showed that as-deposited films were amorphous. In addition, delafossite-CuAlO2 (R m and P63/mmc phase) appeared at 800°C in N2, but monoclinic-CuO and spinel-CuAl2O4 phases existed in air and O2. The formation of delafossite-CuAlO2 phase can be explained with thermodynamics. The optoelectronic properties of delafossite-CuAlO2 films were also measured. The direct optical bandgap was around at 3.3 eV, which is comparable with literature data. The electrical conductivity was obtained to be 6.8*10-3 S/cm. The hot-probe method employed to measure the electrical property of the films, which indicates that delafossite-CuAlO2 films have p-type characteristics.

Properties of Cu2ZnSnS4 thin films prepared by magnetron sputtering and sulfurizing the precursors with different stacking sequences

2014 ◽  
Vol 28 (26) ◽  
pp. 1450210 ◽  
Author(s):  
Zhong Hua ◽  
Xiangcheng Meng ◽  
Yaming Sun ◽  
Wanqiu Yu ◽  
Dong Long
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Stacking Order ◽  
Microstructure Morphology ◽  
Hall Effect Measurements ◽  
Uv Visible

The stacked precursors were deposited on glass substrates from Cu , Sn and ZnS targets by magnetron sputtering with six kinds of stacking sequences. The precursors were sulfurized at 500°C for 2 h in an atmosphere of sulfur. The properties of thin films such as microstructure, morphology, chemical composition, electrical and optical properties of the films were investigated by X-ray diffraction (XRD), scanning election microscopy (SEM), energy dispersive spectroscopy (EDS), Hall effect measurements and UV-visible spectrophotometer (UV-VIS). The results show that the thin film after sulfurizing at 500°C using the stacking order of Cu / Sn / ZnS /glass is the best absorber layer for Cu 2 ZnSnS 4 thin films solar cell among the six kinds of stacking sequences.

Influence of Ar/O2 Ratio on the Prpoperties of Transparent Conducting ZnO:Zr Films Deposited by DC Reactive Magnetron Sputtering

2011 ◽  
Vol 335-336 ◽  
pp. 964-967
Author(s):  
Hua Fu Zhang ◽  
Xin Feng Wang
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Dc Reactive Magnetron Sputtering ◽  
Probe Measurements

Transparent conducting ZnO:Zr thin films were deposited on glass substrates by DC reactive magnetron sputtering in Ar+O2ambience with different Ar/O2 ratios. The structural, electrical and optical properties of ZnO:Zr films were analyzed by X-ray diffraction, four-point probe measurements and UV–vis spectrophotometers. When Ar/O2ratio increases from 20:1 to 25:1, the resistivity significantly decreases because of the improvement of the crystallinity. However, with further increase in Ar/O2ratio, the crystallinity begins to deteriorate resulting in an increase in the resistivity. The films deposited at the optimum Ar/O2ratio of 25:1 have the minimum resistivity of 1.4×10-3Ω•cm and a high transmittance of above 92%.

ON THE STRUCTURE, ELECTRICAL AND OPTICAL PROPERTIES OF TiO2 SPUTTERED THIN FILMS

2006 ◽  
Vol 13 (01) ◽  
pp. 87-92 ◽  
Author(s):  
A. ASHOUR
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Lattice Constants ◽  
Glass Substrates ◽  
Deposited Films

Titanium oxide thin films were prepared by sputtering technique onto glass substrates at room temperature (RT). The structure of the films was confirmed using X-ray diffraction (XRD) and revealed the stoichiometry with an O and Ti ratio of 2. The deposited films at RT were found to be amorphous and the films annealed at 300 and 400°C for 2 h were crystalline with orthorhombic structure. The lattice constants and grain size of the film are calculated. The electrical resistivity was found to depend on the film thickness and decreased with increasing the film thicknesses. The optical constants of the films such as the refractive index, extinction coefficient, and absorption coefficient were also determined using the optical transmittance measurements, and the results were discussed. The optical band gap varies from 3.2 to 3.5 eV as a function of oxygen/argon ratios.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

Growth of Copper Telluride Thin Films using Electrodeposition

2018 ◽  
Vol 21 (1) ◽  
pp. 015-019
Author(s):  
P. Jeyakumar ◽  
S. Thanikaikarasan ◽  
B. Natarajan ◽  
T. Mahalingam ◽  
Luis Ixtlilco
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Electrodeposition Technique ◽  
Cyclic Voltammetric ◽  
Voltammetric Analysis ◽  
Copper Telluride ◽  
X Ray ◽  
Microstructural Parameters ◽  
Glass Substrates ◽  
Deposited Films

Copper Telluride thin films have been prepared on Fluorine doped Tin Oxide coated conducting glass substrates using electrodeposition technique. Cyclic voltammetric analysis has been carried out to analyze the growth mechanism of the deposited films. Thickness value of the deposited films has been estimated using Stylus profilometry. X-ray diffraction pattern revealed that the prepared films possess polycrystalline in nature. Microstructural parameters such as crystallite size, strain and dislocation density are evaluated using observed X-ray diffraction data. Optical absorption analysis showed that the prepared films are found to exhibit band gap value around 2.03 eV.

Effect of electron bombardment during deposition of cadmium sulfide films using a hot-wall technique

1985 ◽  
Vol 63 (6) ◽  
pp. 712-715 ◽  
Author(s):  
A. Haque ◽  
A. E. Dixon ◽  
D. E. Brodie
Keyword(s):  
Dark Conductivity ◽  
Electron Bombardment ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Film Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Effect Measurements ◽  
Decoration Technique ◽  
Cds Films

The use of electron-beam irradiation combined with a hot-wall technique during deposition of CdS films is described. CdS films 2–10 μm thick were thermally deposited with and without electron bombardment on glass substrates using a hot-wall technique under a pressure greater than 1 × 10−6 Torr (1 Torr = 133.3 Pa). Film properties were studied using low-angle X-ray diffraction, scanning electron microscopy, optical microscopy using a chemical decoration technique, Hall-effect measurements, and temperature-dependent dark conductivity. The surface grain size varied from 2 to 5 μm and films were brownish orange with a smoky appearance.

Chemical Vapor Deposition of Vanadium Oxide Tiiin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
Ogie Stewart ◽  
Joan Rodriguez ◽  
Keith B. Williams ◽  
Gene P. Reck ◽  
Narayan Malani ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vanadium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Pressure Chemical ◽  
Vanadium Oxide Thin Films ◽  
Deposited Films

AbstractVanadium oxide thin films were grown on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) from the reaction of vanadium(IV) chloride with isopropanol and t-butanol. Films were deposited in the temperature range 250 to 450°C. The as-deposited films were a dark greenish color consistent with formation of a lower oxide of vanadium. Annealing a film deposited on Corning 7059 glass in air converted the material to a yellow film. X-ray diffraction of the yellow film revealed the presence of V2O5. Optical spectra of the films are presented. Glass substrates previously coated with conductive fluorine doped tin oxide were coated with V2O5 and evaluated for electrochromic activity.

scholarly journals The effect of annealing temperatures on the optical parameters of NiO0.99Cu0.01 thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 73-81
Author(s):  
Ramiz A. Mohammed Al-Ansari
Keyword(s):  
The Other ◽  
Optical Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Reflection Peak ◽  
Weak Reflection ◽  
Diffraction Peaks ◽  
Deposited Films

NiO0.99Cu0.01 films have been deposited using thermal evaporationtechnique on glass substrates under vacuum 10-5mbar. The thicknessof the films was 220nm. The as -deposited films were annealed todifferent annealing temperatures (373, 423, and 473) K undervacuum 10-3mbar for 1 h. The structural properties of the films wereexamined using X-ray diffraction (XRD). The results show that noclear diffraction peaks in the range 2θ= (20-50)o for the as depositedfilms. On the other hand, by annealing the films to 423K in vacuumfor 1 h, a weak reflection peak attributable to cubic NiO wasdetected. On heating the films at 473K for 1 h, this peak wasobserved to be stronger. The most intense peak is at 2θ = 37.12o withthe preferential orientation of the films being (111) plane. The opticalproperties of the films have been studied. The effect of annealingtemperature on the optical parameters of NiO0.99Cu0.01 such astransmittance, reflectance, absorption coefficient, refractive index,extinction coefficient, and real and imaginary parts of dielectricconstant has been reported.

GOLD NANOPARTICLES-EMBEDDED TRANSPARENT CONDUCTING OXIDES: PREPARATION, CHARACTERIZATION, AND TUNING OF THE OPTICAL PROPERTIES

2011 ◽  
Vol 10 (01n02) ◽  
pp. 155-159 ◽  
Author(s):  
RANJIT LAHA ◽  
S. KASIVISWANATHAN
Keyword(s):  
Gold Nanoparticles ◽  
Indium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Optical Absorbance ◽  
Sputtered Films ◽  
Transmission Electron

Gold nanoparticles ( AuNP )-embedded indium oxide and indium tin oxide thin films were prepared by DC and DC magnetron reactive co-sputtering techniques. The concentration and size distribution of AuNP were changed by deposition conditions. The nanoparticles-embedded films were characterized by X-ray diffraction, transmission electron microscopy, and optical spectrophotometry. The X-ray diffraction data showed the polycrystalline nature of indium oxide and indium tin oxide along with the Au (111) peak confirming the presence of elemental AuNP in the matrices. The transmission electron microscope studies revealed that AuNP are distributed in the matrices in different shapes and sizes with the average sizes as 40 nm and 10 nm, respectively for DC-sputtered and DC magnetron-sputtered films. The optical absorbance measurements showed the SPR peak due to AuNP to be around 600 nm. The position and intensity of the SPR peak could be tuned from 650 to 570 nm by changing the concentration of AuNP and annealing the films in oxygen and Ar for different durations.

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