Investigation of Epitaxially Grown PbO, TiO2 and ZrO2 as Bridge Layers for Integration of PZT on GaN by MBE

MRS Proceedings ◽

10.1557/proc-0966-t07-06 ◽

2006 ◽

Vol 966 ◽

Cited By ~ 1

Author(s):

Xing Gu ◽

Natalia Izyumskaya ◽

Vataliy Avrutin ◽

Hadis Morkoç

Keyword(s):

Surface Morphology ◽

Epitaxial Growth ◽

Xrd Pattern ◽

Growth Orientation

ABSTRACTEpitaxial growth of PbO, TiO2 and ZrO2 has been achieved on MOCVD grown GaN template using oxides MBE with a reactive H2O2 oxygen source. In situ RHEED was used to monitor the growth in-situ. AFM was used to characterize the surface morphology of the thin PbO and ZrO2, which show streaky, 2-D RHEED patterns. XRD pattern indicates that the growth orientation of these oxides are PbO [111]//GaN [0002], ZrO2[100]//GaN [0002] and TiO2[200]//GaN[0002].

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4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.99 ◽

2010 ◽

Vol 645-648 ◽

pp. 99-102 ◽

Cited By ~ 7

Author(s):

Kazutoshi Kojima ◽

Sachiko Ito ◽

Junji Senzaki ◽

Hajime Okumura

Keyword(s):

Surface Morphology ◽

Epitaxial Growth ◽

Growth Temperature ◽

Growth Conditions ◽

Step Bunching ◽

Homoepitaxial Growth ◽

Blocking Voltage ◽

Basal Plane Dislocation ◽

Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

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In-Situ Dry Etching of InP Using Phosphorus Tri-Chloride and Re-Growth Inside a Chemical Beam Epitaxial Growth Chamber

MRS Proceedings ◽

10.1557/proc-300-203 ◽

1993 ◽

Vol 300 ◽

Cited By ~ 1

Author(s):

K M. Kapre ◽

W. T. Tsang ◽

P. F. Sciortino

Keyword(s):

Growth Rate ◽

Surface Morphology ◽

Epitaxial Growth ◽

Substrate Surface ◽

Etching Rate ◽

Growth Chamber ◽

Dramatic Improvement ◽

First Time ◽

Substrate Temperatures

ABSTRACTWe have extended the capability and versatility of a chemical beam epitaxial (CBE) system by demonstrating reactive chemical beam etching (RCBE) of InP using phosphorus tri chloride (PCl3)as the gaseous etching beam injected directly into the growth chamber. This permits instant switching from etching to growth (and vice versa) in the same run for the first time in CBE. We investigated RCBE of InP at various substrate temperatures between 400 °C and 580°C, under different PCl3 fluences, and etching conditions. Excellent surface morphology was obtained at high temperatures (> 530°C - 570°C) and under an etching rate of < 6 Å/sec. We also found that upon addition of trimethylindium flow equivalent to a growth rate of 1 Å/sec during RCBE a dramatic improvement in surface morphology was obtained even at a high net etching rate of 10 Å/sec. The surface morphology obtained under such conditions is indistinguishable from that of the original substrate surface. Using Si02 as a mask, in-situ etching of laser mesas followed immediately by regrowth of blocking layers with excellent wetting characteristics was obtained.

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Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071053 ◽

1973 ◽

Vol 31 ◽

pp. 122-123

Author(s):

J. S. Maa ◽

Thos. E. Hutchinson

Keyword(s):

Epitaxial Growth ◽

Film Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Microscopy Technique ◽

Direct Observations ◽

In Situ Electron Microscopy ◽

Beam Sputtering ◽

The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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Growth of Epitaxial IrSi3 Layers on Si(111)

MRS Proceedings ◽

10.1557/proc-160-281 ◽

1989 ◽

Vol 160 ◽

Author(s):

T. L. Lin ◽

C. W. Nieh

Keyword(s):

Surface Morphology ◽

Molecular Beam ◽

Solid Phase ◽

Single Mode ◽

Growth Conditions ◽

Tem Analysis ◽

Mbe Growth ◽

Good Surface ◽

Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

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Achieving Good Protection on Ultra-High Molecular Weight Polythene by In Situ Growth of Amorphous Carbon Film

Coatings ◽

10.3390/coatings11050584 ◽

2021 ◽

Vol 11 (5) ◽

pp. 584

Author(s):

Rui Dang ◽

Liqiu Ma ◽

Shengguo Zhou ◽

Deng Pan ◽

Bin Xia

Keyword(s):

Molecular Weight ◽

Epitaxial Growth ◽

High Molecular Weight ◽

Amorphous Carbon ◽

Transition Layer ◽

In Situ Growth ◽

Good Protection ◽

Ultra High Molecular Weight ◽

Carbon Plasma

Ultra-high molecular weight polythene (UHMWPE), with outstanding characteristics, is widely applied in modern industry, while it is also severely limited by its inherent shortcomings, which include low hardness, poor wear resistance, and easy wear. Implementation of feasible protection on ultra-high molecular weight polythene to overcome its shortcomings would be of significance. In the present study, amorphous carbon (a-C) film was fabricated on ultra-high molecular weight polythene (UHMWPE) to provide good protection, and the relevant growth mechanism of a-C film was revealed by controlling carbon plasma currents. The results showed the in situ transition layer, in the form of chemical bonds, was formed between the UHMWPE substrate and the a-C film with the introduction of carbon plasma, which provided strong adhesion, and then the a-C film continued epitaxial growth on the in situ transition layer with the treatment of carbon plasma. This in situ growth of a-C film, including the in situ transition layer and the epitaxial growth layer, significantly improved the wetting properties, mechanical properties, and tribological properties of UHMWPE. In particular, good protection by in situ growth a-C film on UHMWPE was achieved during sliding wear.

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