Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si0.35Ge0.65OI) Wafers using Cyclical Thermal Oxidation and Annealing

2007 ◽  
Vol 994 ◽  
Author(s):  
Grace Huiqi Wang ◽  
Eng-Huat Toh ◽  
Chih-Hang Tung ◽  
Yong-Lim Foo ◽  
S. Tripathy ◽  
...  

AbstractA novel scheme for the fabrication of SiGe-on-insulator (SGOI) substrates comprising a thin and relaxed silicon-germanium (SiGe) layer with high Ge mole fraction is reported. A cyclical thermal oxidation and annealing (CTOA) process is introduced to alleviate issues associated with surface roughening and non-uniformity in Ge content. A systematic study of the stress developed in the SiGe layer as condensation takes place is presented. A clear understanding of the strain evolution enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering in high mobility MOSFETs.

2002 ◽  
Vol 729 ◽  
Author(s):  
Roger T. Howe ◽  
Tsu-Jae King

AbstractThis paper describes recent research on LPCVD processes for the fabrication of high-quality micro-mechanical structures on foundry CMOS wafers. In order to avoid damaging CMOS electronics with either aluminum or copper metallization, the MEMS process temperatures should be limited to a maximum of 450°C. This constraint rules out the conventional polycrystalline silicon (poly-Si) as a candidate structural material for post-CMOS integrated MEMS. Polycrystalline silicon-germanium (poly-SiGe) alloys are attractive for modular integration of MEMS with electronics, because they can be deposited at much lower temperatures than poly-Si films, yet have excellent mechanical properties. In particular, in-situ doped p-type poly-SiGe films deposit rapidly at low temperatures and have adequate conductivity without post-deposition annealing. Poly-Ge can be etched very selectively to Si, SiGe, SiO2 and Si3N4 in a heated hydrogen peroxide solution, and can therefore be used as a sacrificial material to eliminate the need to protect the CMOS electronics during the MEMS-release etch. Low-resistance contact between a structural poly-SiGe layer and an underlying CMOS metal interconnect can be accomplished by deposition of the SiGe onto a typical barrier metal exposed in contact windows. We conclude with directions for further research to develop poly-SiGe technology for integrated inertial, optical, and RF MEMS applications.


2015 ◽  
Vol 645-646 ◽  
pp. 70-74 ◽  
Author(s):  
Min Zhong ◽  
Yu Hang Zhao ◽  
Shou Mian Chen ◽  
Ming Li ◽  
Shao Hai Zeng ◽  
...  

An embedded SiGe layer was applied in the source/drain areas (S/D) of a field-effect transistor to boost the performance in the p channels. Raised SiGe S/D plays a critical role in strain engineering. In this study, the relationship between the SiGe overfilling and the enhancement of channel stress was investigated. Systematic technology computer aided design (TCAD) simulations of the SiGe overfill height in a 40 nm PMOS were performed. The simulation results indicate that a moderate SiGe overfilling induces the highest stress in the channel. Corresponding epitaxial growth experiments were done and the obtained experimental data was in good agreement with the simulation results. The effect of the SiGe overfilling is briefly discussed. The results and conclusions presented within this paper might serve as useful references for the optimization of the embedded SiGe stressor for 40 nm logic technology node and beyond.


2007 ◽  
Vol 4 (3) ◽  
pp. 425-432 ◽  
Author(s):  
J. Leifeld ◽  
S. Fenner ◽  
M. Müller

Abstract. Amount, stability, and distribution of black carbon (BC) were studied at four sites of a large peatland ("Witzwil") formerly used as a disposal for combustion residues from households to derive BC displacement rates in the profile. Possible artefacts from thermal oxidation with Differential Scanning Calorimetry (DSC) on BC quantification of C-rich deposits were inferred by choosing three sites from a second peatland with no historical record of waste disposal as a reference ("Seebodenalp"). All sites were under grassland at time of sampling, but were partially cropped in the past at Witzwil. Mean BC contents in topsoils of Witzwil ranged from 10.7 to 91.5 (0–30 cm) and from 0.44 to 51.3 (30–140 cm) mg BC g−1 soil, corresponding to BC/OC ratios of 0.04 to 0.3 (topsoil) and 0.02 to 0.18 (deeper soil). At three sites of Seebodenalp, BC was below the detection limit of 0.4 mg g−1 organic soil, indicating negligible formation of BC during thermal oxidation of peat. 13C NMR spectra corroborated the high BC contents at Witzwil. The data support a considerable vertical transport of BC given that soils were ploughed not deeper than 30 cm since abandonment of waste application about 50 years ago. The total amount of BC in the Witzwil profiles ranged from 3.2 to 7.5 kg BC m−2, with 21 to 69 percent of it stemming from below the former ploughing depth. Under the premise of negligible rates of BC consumption since abandonment of waste application, minimum BC transport rates in these peats are 0.6 to 1.2 cm a−1. The high mobility of BC might be explained by high macro-pore volumes in combination with occasional water saturation. By means of DSC peak temperatures, different types of BC could be distinguished, with deeper horizons containing BC of higher thermal stability. Application of combustion residues likely involved a mixture of various BC types, of which thermally more stable ones, most likely soots, were preferentially transported downwards.


2001 ◽  
Vol 79 (22) ◽  
pp. 3606-3608 ◽  
Author(s):  
Y. S. Lim ◽  
J. S. Jeong ◽  
J. Y. Lee ◽  
H. S. Kim ◽  
H. K. Shon ◽  
...  
Keyword(s):  

2007 ◽  
Vol 4 (2) ◽  
pp. 871-891 ◽  
Author(s):  
J. Leifeld ◽  
S. Fenner ◽  
M. Müller

Abstract. Amount, stability, and distribution of black carbon BC were studied at four sites of a large peatland ("Witzwil") formerly used as a disposal for combustion residues from households to derive BC displacement rates in the profile. Possible artefacts from thermal oxidation with Differential Scanning Calorimetry (DSC) on BC quantification of C-rich deposits were inferred by choosing three sites from a second peatland with no historical record of waste disposal as a reference ("Seebodenalp"). All sites were under grassland at time of sampling, but were partially cropped in the past at Witzwil. Mean BC contents in topsoils of Witzwil ranged from 10.7 to 91.5 (0–30 cm) and from 0.44 to 51.3 (30–140 cm) mg BC g−1 soil, corresponding to BC/OC ratios of 0.04 to 0.3 (topsoil) and 0.02 to 0.18 (deeper soil). At three sites of Seebodenalp, BC was below the detection limit of 0.4 mg g−1 organic soil, indicating negligible formation of BC during thermal oxidation of peat. 13C NMR spectra corroborated the high BC contents at Witzwil. The data refer to a considerable vertical transport of BC given that soils were ploughed not deeper than 30 cm since abandonment of waste application about 50 years ago. The total amount of BC in the Witzwil profiles ranged from 3.2 to 7.5 kg BC m−2, with 21 to 69 percent of it stemming from below the former ploughing depth. Under the premise of negligible rates of BC consumption since abandonment of waste application, minimum BC transport rates in these peats are 0.6 to 1.2 cm a−1. The high mobility of BC might be explained by high macro-pore volumes in combination with occasional water saturation. By means of DSC peak temperatures, different types of BC could be distinguished, with deeper horizons containing BC of higher thermal stability. Application of combustion residues likely involved a mixture of various BC types, of which thermally more stable ones, most likely soots, were preferentially transported downwards.


2007 ◽  
Vol 7 (11) ◽  
pp. 4084-4088
Author(s):  
Young-Kyu Kim ◽  
Kwan-Sun Yoon ◽  
Joong-Sik Kim ◽  
Taeyoung Won

We discuss the boron diffusion in a biaxial tensile strained {001} Si and SiGe layer with kinetic Monte Carlo (KMC) method. We created a strain in silicon by adding a germanium mole fraction in silicon in order to perform a theoretical analysis. The generation of a strain in silicon influences in the diffusivity as well as the penetration profile during the implantation. The strain energy for the charged defects has been calculated from the ab-initio calculation while the diffusivity of boron was extracted from the Arrhenius formula. Hereby, the influence of the germanium content on the dopant diffusivity was estimated. Our KMC study revealed that the diffusion of the B atoms was retarded with increasing Germanium mole fraction in a strained silicon layer. Furthermore, we derived a functional dependence of the in-plane strain as well as the out-of-plane strain on the germanium mole fraction, which lies in the distribution of equivalent stresses along the Si/SiGe interface.


2012 ◽  
Vol 1437 ◽  
Author(s):  
Gunnar B. Malm ◽  
Mohammadreza Kolahdouz ◽  
Fredrik Forsberg ◽  
Niclas Roxhed ◽  
Frank Niklaus

ABSTRACTSemiconductor-based thermistors are very attractive sensor materials for uncooled thermal infrared (IR) bolometers. Very large scale heterogeneous integration of MEMS is an emerging technology that allows the integration of epitaxially grown, high-performance IR bolometer thermistor materials with pre-processed CMOS-based integrated circuits for the sensor read-out. Thermistor materials based on alternating silicon (Si) and silicon-germanium (SiGe) epitaxial layers have been demonstrated and their performance is continuously increasing. Compared to a single layer of silicon or SiGe, the temperature coefficient of resistance (TCR) can be strongly enhanced to about 3 %/K, by using thin alternating layers. In this paper we report on the optimization of alternating Si/SiGe layers by advanced physically based simulations, including quantum mechanical corrections. Our simulation framework provides reliable predictions for a wide range of SiGe layer compositions, including concentration gradients. Finally, our SiGe thermistor layers have been evaluated in terms of low-frequency noise performance, in order to optimize the bolometer detectivity.


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