Electrical Characteristics of Tisi2/n+-Polysilicon/Sio2/Si Mos Capacitors Stressed Under High Temperature Silicide Processing Conditions

1987 ◽  
Vol 105 ◽  
Author(s):  
K. Shenai ◽  
P. A. Piacente ◽  
B. J. Baliga
Keyword(s):  
High Temperature ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Processing Conditions ◽  
Mos Capacitors ◽  
Interface Characteristics ◽  
High Temperature Processing ◽  
Mos Structures ◽  
Nordheim Tunneling

AbstractDetailed electrical characteristics of TiSi2/n+-polysilicon/SiO2/Si MOS capacitors stressed under a variety of high temperature processing conditions is reported. These devices have ˜2000Å TiSi2 formed by a two-step thermal anneal on heavily POCl3doped polysilicon with thicknesses of 6 kÅ and 8 kÅ. These structures were capped with 8 kÅ of SiO2 and stressed in nitrogen at process temperatures in the range of 700° C to 1100° C. The electrical performance was evaluated in terms of I-V, C-V, Fowler-Nordheim tunneling, and SiO2/Si interface characteristics of MOS structures. A systematic degradation of the SiO2/Si interface was observed due to process limitations of TiSi2 at high Lemperatures.

Surface Modification in Polycrystalline Y2 O3 Under High-Pressure/High-Temperature Processing Conditions

2013 ◽  
Vol 96 (6) ◽  
pp. 1966-1971 ◽  
Author(s):  
Jafar F. Al-Sharab ◽  
Stuart Deutsch ◽  
Christopher S. Nordahl ◽  
Stephen D. Tse ◽  
Bernard H. Kear
Keyword(s):  
High Pressure ◽  
Surface Modification ◽  
High Temperature ◽  
Processing Conditions ◽  
High Pressure High Temperature ◽  
High Temperature Processing

Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 519-522 ◽  
Author(s):  
Harsh Naik ◽  
Z. Li ◽  
T. Paul Chow
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Processing Conditions ◽  
Mos Capacitors ◽  
Voltage Shift ◽  
Experimental Identification ◽  
Uv Illumination ◽  
Fixed Charges ◽  
Flatband Voltage

High temperature C-V characterization with and without UV illumination has been performed on n-type 4H-SiC MOS capacitors fabricated using different processing conditions to extract various types of interfacial charges. An anomalous positive flatband voltage shift with temperature has been observed in most of the SiC MOS capacitors measured. We have experimentally identified an extra type of fixed charges at the 4H-SiC/SiO2 interface from the temperature dependence of the flatband voltage, particularly under UV illumination.

AFM study of the dynamics of α-alumina surface faceting during high-temperature processing

1995 ◽  
Vol 53 ◽  
pp. 334-335 ◽  
Author(s):  
Michael W. Bench ◽  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
High Temperature ◽  
Thin Foil ◽  
Sem Analysis ◽  
Conductive Coatings ◽  
Force Microscopy ◽  
Minimal Sample ◽  
Atomic Force ◽  
Formation And Evolution ◽  
High Temperature Processing ◽  
Nominal Surface

To gain a better understanding of the surface faceting that occurs in α-alumina during high temperature processing, atomic force microscopy (AFM) studies have been performed to follow the formation and evolution of the facets. AFM was chosen because it allows for analysis of topographical details down to the atomic level with minimal sample preparation. This is in contrast to SEM analysis, which typically requires the application of conductive coatings that can alter the surface between subsequent heat treatments. Similar experiments have been performed in the TEM; however, due to thin foil and hole edge effects the results may not be representative of the behavior of bulk surfaces.The AFM studies were performed on a Digital Instruments Nanoscope III using microfabricated Si3N4 cantilevers. All images were recorded in air with a nominal applied force of 10-15 nN. The alumina samples were prepared from pre-polished single crystals with (0001), , and nominal surface orientations.

A novel process for SiGe Core-Shell JAM Transistors Fabrication and thermal annealing effect on its electrical performance

2020 ◽  
Vol 1 (2) ◽  
Author(s):  
Ashish Kumar ◽  
Wen-Hsi Lee
Keyword(s):  
Process Condition ◽  
Subthreshold Swing ◽  
Electrical Performance ◽  
Core Shell ◽  
Electrical Characteristics ◽  
Thermal Budget ◽  
New Process ◽  
Comparable Performance ◽  
Higher Temperature ◽  
Film Annealing

 In this study, we fabricate Si/SiGe core-shell Junctionless accumulation mode (JAM)FinFET devices through a rapid and novel process with four main steps, i.e. e-beam lithography definition, sputter deposition, alloy combination annealing, and chemical solution etching. The height of Si core is 30 nm and the thickness of Si/SiGe core-shell is about 2 nm. After finishing the fabrication of devices, we widely studied the electrical characteristics of poly Si/SiGe core-shell JAM FinFET transistors from a view of different Lg and Wch. A poly-Si/SiGe core -shell JAMFETs was successfully demonstrated and it also exhibits  a superior subthreshold swing of 81mV/dec and high on/off ratio > 105 when annealing for 1hr at 600°C. The thermal diffusion process condition for this study are 1hr at 600°C and 6hr at 700°C for comparison. The annealing condition at 700oC for 6 hours shows undesired electrical characteristics against the other. Results suggests that from over thermal budget causes a plenty of Ge to precipitate against to form SiGe thin film. Annealing JAMFETs at low temperature shows outstanding Subthreshold swing and better swing condition when compared to its counterpart i.e. at higher temperature. This new process can still fabricate a comparable performance to classical planar FinFET in driving current. 

Influence of Enzyme Activity of Bacteria and Leucocytes in Raw Milk on Age Gelation after UHT Processing

1984 ◽  
Vol 47 (2) ◽  
pp. 105-107 ◽  
Author(s):  
BARBARA P. KEOGH ◽  
G. PETTINGILL
Keyword(s):  
Enzyme Activity ◽  
High Temperature ◽  
Inhibitory Action ◽  
Raw Milk ◽  
Bacterial Counts ◽  
High Temperature Processing ◽  
The Relationship ◽  
Ultra High Temperature

An investigation was undertaken into the relationship between the enzyme activity of cells harvested from raw milk and time taken for age gelation (TAG) to occur in the milk after ultra-high-temperature processing. It was shown that there was no relationship between the TAG and the bacterial counts on milk agar at 30°C or 7°C nor was there a relationship between the counts and the level of enzyme activity of the harvested cells. There was, however, a significant correlation between the level of enzyme activity of the harvested cells and the TAG. When extra bovine leucocytes were added to raw milk before processing, the TAG was increased. This suggested that there was an inhibitory action of leucocytes in development of age gelation.

Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

1985 ◽  
Vol 28 (7) ◽  
pp. 717-720 ◽  
Author(s):  
Y. Nissan-Cohen ◽  
J. Shappir ◽  
D. Frohman-Bentchkowsky
Keyword(s):  
Charge Trapping ◽  
Tunneling Currents ◽  
Mos Structures ◽  
Nordheim Tunneling

Investigation of ZnO Buffer for the Optical and Electrical Characteristics of Polymer/Carbon Nanotube Composite Sol Deposited on Flexible Substrates

2013 ◽  
Vol 747 ◽  
pp. 526-529
Author(s):  
Bo Yuan Su ◽  
Meng Chun Chen ◽  
Sheng Yuan Chu ◽  
Yang Der Juang
Keyword(s):  
Carbon Nanotube ◽  
Detrimental Effect ◽  
Bending Test ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Composite Polymer ◽  
Conductive Films ◽  
Bending Effect ◽  
Average Transmittance ◽  
Carbon Nanotube Composite

In this paper, the carbon nanotube was well dispersed into the poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDOTPSS) solution with a best concentration of 4 mg/ml. The prepared sol was spun on poly (ether sulfone) (PES) substrates, showing sheet resistance as low as 19.8 Ω/sq and the high average transmittance over 90 %. The change in optical and electrical properties due to poly (ether sulfone) (PES) substrate was investigated to understand the failure mechanisms. For realizing the bending effect on electrical performance, the pre-deposited ZnO buffer was introduced to improve the deterioration during the repeated bending test. The composite polymer enhanced the electrical conductivity with less detrimental effect on the optical transparency, which suggests the potential transparent conductive films for use in developing optical and electrical device.

Structural and electrical characteristics of Ga2O3(Gd2O3)∕GaAs under high temperature annealing

2006 ◽  
Vol 100 (10) ◽  
pp. 104502 ◽  
Author(s):  
C. P. Chen ◽  
Y. J. Lee ◽  
Y. C. Chang ◽  
Z. K. Yang ◽  
M. Hong ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characteristics ◽  
High Temperature Annealing

Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing

2010 ◽  
Vol 108 (7) ◽  
pp. 074902 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Abdulazeez S. Alomar ◽  
Jef Poortmans ◽  
Robert P. Mertens
Keyword(s):  
High Temperature ◽  
Crystalline Silicon ◽  
Shape Transformation ◽  
High Temperature Processing
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