Enhanced 1.54 μm Luminescence in Er-doped ZnO Nanoparticle Films via Indirect Excitation

2008 ◽  
Vol 1111 ◽  
Author(s):  
Zhengda Pan ◽  
S. H. Morgan ◽  
A. Ueda ◽  
R. Aga ◽  
H. Y. Xu ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Annealed Film ◽  
Zno Films ◽  
Zno Nanoparticle ◽  
Force Microscopy ◽  
Nanoparticle Films ◽  
Direct Excitation ◽  
Nano Crystalline ◽  
Doped Zno ◽  
Er Doped

AbstractPhotoluminescence (PL) of Er-doped ZnO nanoparticle films was studied. The films were fabricated using e-beam evaporation. The films were subsequently annealed at 700 °C in air for an hour. The atomic force microscopy (AFM) image revealed nano-sized ZnO particles. PL was measured at two excitation wavelengths, 325 and 514.5 nm. The 325 nm is used for exciting the ZnO host semiconductor and 514.5 nm is used for directly exciting Er3+ ions in the ZnO films. Er3+ luminescence was observed from the annealed film using either indirect (325 nm) or direct (514.5 nm) excitations. It has been found that the indirect excitation is about 40 times more efficient than the direct excitation in producing 1.54 μm PL. With indirect excitation, the Er3+ luminescence observed is attributed to energy transfer from ZnO host to the Er3+ ions doped. Energy transfer from e-h pairs resulting from ZnO host excitation may provide efficient routes for exciting Er3+ ions inside nano-crystalline particles of the films.

Luminescence of Er-doped ZnO Films: Effects of Thermal Annealing and Doping Concentration

2007 ◽  
Vol 1035 ◽  
Author(s):  
Zhengda Pan ◽  
S H Morgan ◽  
A Ueda ◽  
R Aga ◽  
A Steigerwald ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Thermal Annealing ◽  
Annealed Film ◽  
Fiber Amplifier ◽  
Fused Silica ◽  
Zno Films ◽  
Essential Property ◽  
Erbium Doped Fiber Amplifier ◽  
Nano Crystalline ◽  
Erbium Doped

AbstractPhotoluminescence (PL) of erbium-doped zinc oxide films with nano-sized grains was studied. The films were grown on silicon (100) and fused silica substrates using e-beam evaporation. The evaporating targets used were sintered pellets of ZnO and Er2O3 mixtures with two different Er concentrations. The films were subsequently annealed at 700 °C in air for an hour. PL was measured at two excitation wavelengths, 325 and 488 nm. The 325 nm is used for exciting the host semiconductor ZnO and 488 nm is used for directly exciting Er3+ ions in the ZnO host. Strong Er3+ luminescence of 4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 transitions was observed from annealed film with 4.0 % Er2O3 concentration using either 325 or 488 nm excitation. With 325 nm excitation, the Er3+ luminescence observed is attributed to energy transfer from the excitons in ZnO host to the Er3+ ions doped. The effective energy transfer from ZnO host to the doped Er3+ ions is an essential property for the realization of actual current-injection opto-electronic devices operating at wavelengths of Er3+ emission, for example, at 1.54 μm for the erbium-doped fiber amplifier (EDFA). Our PL results indicate that thermal annealing plays an important role for optically activating the doped Er3+ ions in ZnO nano-crystalline grains of the film.

scholarly journals Nonlinear absorption properties and excited-state charge-transfer dynamics of Er doped ZnO films

2018 ◽  
Vol 8 (11) ◽  
pp. 3262 ◽  
Author(s):  
Si-Qiu Li ◽  
Cheng-Bao Yao ◽  
Yu Cai ◽  
Yue Han ◽  
Ke-Xin Zhang ◽  
...  
Keyword(s):  
Excited State ◽  
Charge Transfer ◽  
Nonlinear Absorption ◽  
Zno Films ◽  
Absorption Properties ◽  
Doped Zno ◽  
Charge Transfer Dynamics ◽  
Er Doped ◽  
State Charge

Effect of annealing temperature on optical properties of Er-doped ZnO films prepared by sol–gel method

2008 ◽  
Vol 148 (1-3) ◽  
pp. 35-39 ◽  
Author(s):  
Fanyong Ran ◽  
Lei Miao ◽  
Sakae Tanemura ◽  
Masaki Tanemura ◽  
Yongge Cao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno ◽  
Er Doped

scholarly journals Effect of silver doping on structural and photocatalytic circumstances of ZnO nanoparticles

2020 ◽  
pp. 13-20
Author(s):  
Luma Ahmed ◽  
Eitemad S. Fadhil ◽  
Ayad F. Mohammed
Keyword(s):  
Zno Nanoparticles ◽  
Precipitation Method ◽  
Methyl Green ◽  
Zno Nanoparticle ◽  
Zno Nps ◽  
Force Microscopy ◽  
Ft Ir ◽  
Doped Zno ◽  
Co Precipitation ◽  
Artificial Uv

This article describes the synthesis of ZnO nanoparticles (Nps) using the co-precipitation method and then calcinated at 500oC for 2 h. The photo activity of ZnO nanoparticles was examined in photo decolorization of methyl green dye under artificial UV -A light. This prepared photocatalyst (ZnO Np) was modified his surface by 2% Ag doped using the photo deposition method under inert gas for 3h. The characterization of undoped and 2% Ag doped ZnO Nps were estimated by Fourier-transform infrared spectroscopy (FT-IR), X-ray Diffraction (XRD), and Atomic force microscopy (AFM). In FT-IR analysis, the new peaks occurred around 624-778 cm-1 confirmed the Ag really is doped on prepared ZnO Np. Based on data from XRD, the mean crystal size was reduced with doped the 2% Ag. The AFM images for the prepared photocatalysts ensure that the shapes of all samples are semi-spherical with nanometer size. Series of kinetics experiments were performed for the photocatalytic decolourization of methyl green dye using undoped and 2% Ag doped ZnO nanoparticle and found to be pseudo-first-order kinetics.

Photoinduced piezo-optical effect in Er doped ZnO films

2006 ◽  
Vol 89 (4) ◽  
pp. 043116 ◽  
Author(s):  
T. M. Williams ◽  
D. Hunter ◽  
A. K. Pradhan ◽  
I. V. Kityk
Keyword(s):  
Zno Films ◽  
Optical Effect ◽  
Doped Zno ◽  
Er Doped

Influence of Annealing on the 1.5 μm Light Emission of Er-doped ZnO Thin Films and its Crystal Quality

2005 ◽  
Vol 20 (9) ◽  
pp. 2578-2582 ◽  
Author(s):  
Yukari Ishikawa ◽  
Mitsuhiro Okamoto ◽  
Shigeru Tanaka ◽  
Dai Nezaki ◽  
N. Shibata
Keyword(s):  
Light Emission ◽  
Intensity Variation ◽  
Crystal Quality ◽  
Zno Films ◽  
Diffraction Measurement ◽  
Zno Film ◽  
Doped Zno ◽  
Pl Intensity ◽  
Er Doped

Intensity variation of 1.5 μm light emission at room temperature from Er-doped epitaxial and polycrystal ZnO films depending on annealing temperature (773–1373 K) was studied. As-grown Er-doped epitaxial ZnO film emitted 1.5 μm photoluminescence(PL) higher than as-grown Er-doped polycrystal ZnO. It was found that the annealing in air increases PL intensity and the maximum PL intensity was obtained by annealing at optimal temperature (1073 K). Spectrum shape and intensity of 1.5 μm PL of Er-doped epitaxial ZnO after annealing at 1073 K resembled those of Er-doped polycrystal ZnO after annealing at 1073 K. X-ray diffraction measurement demonstrated that annealing improves crystal quality of Er-doped ZnO film. We assumed that the process of 1.5 μm light emission is dependent on local area placement of Zn and O atoms around Er as well as crystal quality of ZnO.

Effects of Thermal Annealing on Electrical, Optical and Structural Properties of Ga-Doped ZnO Films

2010 ◽  
Vol 638-642 ◽  
pp. 2891-2896
Author(s):  
P.C. Chang ◽  
K.H. Lee ◽  
A.N. Tu ◽  
S.J. Chang ◽  
K.L. Lee
Keyword(s):  
Structural Properties ◽  
Thermal Annealing ◽  
Carrier Transport ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Ga doped ZnO (GZO) films were prepared by radio frequency (rf) magnetron sputtering on glass or silicon substrates. Electrical, optical, and structural properties of these films were analyzed in order to investigate their dependence on thermal annealing temperature. GZO films with a minimum resistivity of 5.2×10-3 Ω-cm annealed at 400°C and a transparency above 80% in visible region were observed. The temperature-dependent conductivity affected the carrier transport and was related to the localization of carriers. The results of transmission spectra were consistent with the results of atomic force microscopy (AFM) scan. X-ray diffraction analysis and electron spectroscopy for chemical analysis were also used to investigate the properties of GZO films.

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