Novel Silylethynyl Substituted Pentacenes With High-temperature Thermal Transitions

2010 ◽  
Vol 1270 ◽  
Author(s):  
David Redinger ◽  
Robert S. Clough ◽  
James C. Novack ◽  
Gregg Caldwell ◽  
Marcia M. Payne ◽  
...  
Keyword(s):  
High Temperature ◽  
Melting Point ◽  
Thermal Transition ◽  
Temperature Transition ◽  
Thermal Transitions ◽  
Type Semiconductor ◽  
New Material ◽  
P Type

AbstractModifications to the p-type semiconductor TIPS-Pentacene can result in elimination of the solid-solid thermal transition at 124 °C. This new material has shown mobility higher than 1 cm2/Vs. Elimination of the solid-solid thermal transition leaves the melting point as the lowest temperature transition at 199 °C.

Differences of Bioleaching of Pyrites from Different Geo-Genetic Deposits by Leptospirillum ferriphilum

2013 ◽  
Vol 825 ◽  
pp. 326-330
Author(s):  
Xun Zhang ◽  
Guo Hua Gu ◽  
Ke Ting Hu ◽  
Guan Zhou Qiu
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Internal Structure ◽  
Optical Microscope ◽  
Leaching Rate ◽  
Fine Grained ◽  
Internal Structures ◽  
Type Semiconductor ◽  
P Type ◽  
Sedimentary Pyrite

In this paper, the bioleaching behavior of three pyrites from different geological origins (high-temperature hydrothermal, low-temperature hydrothermal and coal sedimentary) by L. ferriphilum was studied. The internal structure of three pyrite samples were investigated using optical microscope. The results show that the physical characteristics and internal structures of pyrites from different geological origins are different, and this causes the divergences of their bioleaching behavior. High-temperature hydrothermal pyrite (n-type semiconductor tested) is not almost dissolved and the leaching rate is only 0.58%, while the leaching rate of low-temperature hydrothermal pyrite and coal sedimentary pyrite (both of p-type semiconductor tested) are 15.25% and 27.50% respectively. The Leica optical microscope test of p-type semiconductor pyrites indicates that coarse particle of low-temperature hydrothermal pyrite is crystallized well and sedimentary pyrite consists of fine-grained crystal with poor crystallinity. This was suggested to cause the divergences of the bioleaching rate of both p-type semiconductor pyrites. In view of mineralogy, the semiconductive type of pyrite is the primary factor affecting its bioleaching. Furthermore, the different internal structure of pyrites will further have an influence on bioleaching for the same semiconductive type.Key words: pyrite; bioleaching; L. ferriphilum; geo-genetic

CRM MOLYBDENUM-50 RHENIUM

Alloy Digest ◽  
1970 ◽  
Vol 19 (12) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Powder Metallurgy ◽  
Melting Point ◽  
Physical Properties ◽  
Heat Treating ◽  
Electrical Contacts ◽  
High Melting ◽  
High Melting Point ◽  
Temperature Performance

Abstract CRM MOLYBDENUM-50 RHENIUM is a high-melting-point alloy for applications such as electronics tube components, electrical contacts, thermionic converters, thermocouples, heating elements and rocket thrusters. All products are produced by powder metallurgy. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Mo-11. Producer or source: Chase Brass & Copper Company Inc..

CRM RHENIUM

Alloy Digest ◽  
1970 ◽  
Vol 19 (8) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Powder Metallurgy ◽  
Melting Point ◽  
Heat Treating ◽  
Electrical Contacts ◽  
High Melting ◽  
High Melting Point ◽  
Temperature Performance ◽  
Commercially Pure

Abstract CRM RHENIUM is a commercially pure, high-melting-point metal for applications such as electronics tube components, electrical contacts, thermionic converters, thermocouples, heating elements and rocket thrusters. All products are produced by powder metallurgy. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Re-1. Producer or source: Chase Brass & Copper Company Inc..

Study of the electrical properties of  Cz p-type solar-grade silicon wafers against the high-temperature processes

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Mohamed Maoudj ◽  
Djoudi Bouhafs ◽  
Nacer Eddine Bourouba ◽  
Abdelhak Hamida-Ferhat ◽  
Abdelkader El Amrani
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Silicon Wafers ◽  
Solar Grade Silicon ◽  
High Temperature Processes ◽  
Grade Silicon ◽  
P Type

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

Viscoelastic Behavior of Segmented Elastomers

1967 ◽  
Vol 40 (4) ◽  
pp. 1105-1110 ◽  
Author(s):  
Stuart L. Cooper ◽  
Arthur V. Tobolsky
Keyword(s):  
Hydrogen Bonding ◽  
Glass Transition ◽  
High Temperature ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Viscoelastic Behavior ◽  
Temperature Transition ◽  
Hydrogen Bonding Interactions ◽  
Structural Nature ◽  
Hard Segments

Abstract Viscoelastic behavior of linear segmented elastomers was examined. The unusual properties found in spandex systems are also observable in hydrocarbon block co-polymers, indicating that hydrogen bonding interactions are perhaps not essential. Low temperature properties of segmented systems are governed by the structural nature of the associated flexible segments, which determines the value of the major glass transition temperature (Tg). It appears that an association of the hard segments provides a broad temperature range of enhanced rubbery modulus. This occurs between the major Tg and a secondary high temperature transition.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

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