Molecular Beam Epitaxical Growth of AlxGa1-xAs on non- Planar Patterned GaAs (100)

1989 ◽  
Vol 145 ◽  
Author(s):  
S. Guha ◽  
A. Madhukar ◽  
K. Kaviani ◽  
Li Chen ◽  
R. Kuchibhotla ◽  
...  
Keyword(s):  
Migration Rate ◽  
Molecular Beam ◽  
Growth Front ◽  
In Situ Growth ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
Transmission Electron ◽  
Front Profile

AbstractWe have examined some aspects of inter-facet migration during molecular beam epitaxical(MBE) growth of AlxGal-xAs on patterned GaAs (100) substrates. Scanning and cross-sectional transmission electron microscopy are employed to examine the evolution of the growth front profile. We observe significant inter facet migration from (3111/1411) facets which originate from the terrace edges to the flat terrace region. The migration length of cations on these facets is at least 0.9 μm for GaAs growth while for A10.5Ga0.5As it is less than 0.3 μm. We also observe a decreasing inter- facet migration rate with increasing growth. This interfacet migration is exploited for in situ, growth kinetics controlled, creation of laterally confined quantum well structures on the top terrace region and photoluminescence results for these structures are presented.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Very Thin 2D GaAs Films on Si During the Early Stages of Growth by MBE

1989 ◽  
Vol 159 ◽  
Author(s):  
D.B. Fenner ◽  
D.K. Biegelsen ◽  
B.S. Krusor ◽  
F.A. Ponce ◽  
J.C. Tramontana
Keyword(s):  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Cross Sectional ◽  
Stages Of Growth ◽  
Transmission Electron ◽  
Gaas Films ◽  
Lattice Images ◽  
Graded Thickness

ABSTRACTGaAs samples deposited on Si by molecular beam epitaxy (MBE) with a graded thickness of 0–3 nm initially show the presence of a metastable two dimensional (2D) layer containing Ga and As. In the thicker regions of the wedge samples, islands (3D topography) form in the presence of the 2D sea, i.e., Stranski – Krastanov growth. Compositional profiles of these wedges were made with in situ Auger electron spectroscopy (AES) which has allowed the identification of at least four regimes of growth. Lattice images from cross – sectional transmission electron microscopy (XTEM) are consistent with the AES profiles. Substrate temperature during deposition of the films has a strong effect on film topography, as does the beam – flux ratio on film stoichiometry.

A TEM study of low-temperature Ge growth on Ge(001)2×1

1993 ◽  
Vol 51 ◽  
pp. 804-805
Author(s):  
H.Z. Xiao ◽  
G. Xue ◽  
I.M. Robertson ◽  
H.K. Birnbaum ◽  
J.E. Greene
Keyword(s):  
Low Temperature ◽  
High Energy ◽  
Group Iv ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Group Iv Semiconductors ◽  
Transmission Electron ◽  
And Control ◽  
Post Deposition

One approach to a solution of the doping problem in the molecular beam epitaxy (MBE) growth of the group IV semiconductors, e.g., segregation, low incorporation, and control of the dopants, is to lower the growth temperatures. It has been found that the room temperature Si deposition becomes amorphous after growth of a limiting epitaxial thickness which increases rapidly with the growth temperature. However, the mechanism for this structural transition is not well understood. In the present paper, we report the preliminary results of a study on the mechanism of the low temperature MBE growth of Ge on Ge(001)2×1 over the temperature range of 20-100 °C at deposition rates R=0.05 and 0.1 nm s−1 in an MBE system which has a bass pressure of 5xl0−11 Torr which increases to about 2xl0−9 Torr during deposition. The structural transitions were investigated using a combination of in-situ reflection high-energy electron diffraction (RHEED) and post-deposition high resolution cross-sectional transmission electron microscopy (XTEM).

Structures of Nb/Al2O3 Interfaces Produced by Different Experimental Routes

1990 ◽  
Vol 183 ◽  
Author(s):  
J. Mayer ◽  
W. Mader ◽  
D. Knauss ◽  
F. Ernst ◽  
M. Rühle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Al Alloy ◽  
Misfit Dislocations ◽  
Orientation Relationships ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Transmission Electron

AbstractNb/Al2O3 interfaces were produced by (i) diffusion bonding of single crystalline Nb and Al2O3 at 1973 K, (ii) internal oxidation of a Nb-3at.% Al alloy at 1773 K, and (iii) molecular beam epitaxy (MBE) growth of 500 nm thick Nb overlayers on sapphire substrates at 1123 K. Cross-sectional specimens were prepared and studied by conventional (CTEM) and high resolution transmission electron microscopy (HREM). The orientation relationships between Nb and Al2O3 were identified by diffraction studies. HREM investigations revealed the structures of the different interfaces including the presence of misfit dislocations at or near the interface. The results for the different interfaces are compared.

An Electron Microscopic Characterization of Mbe-Grown ZnSe/CaAs and ZnSe/Ge Heterointerfaces

1990 ◽  
Vol 198 ◽  
Author(s):  
S.B. Sant ◽  
R.W. Smith ◽  
G.C. Weatherly
Keyword(s):  
Molecular Beam ◽  
Nucleation And Growth ◽  
Epitaxial Films ◽  
Defect Characterization ◽  
Initial Growth ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTMolecular beam epitaxy (MBE) grown ZnSe/GaAs and ZnSe/Ge heterointerfaces have been studied by transmission electron microscopy (TEM). Defect characterization of cross-sectional and planar specimens showed that ZnSe epitaxial films contain numerous twins that predominantly arise at the interface. Planar specimens of ZnSe/Ge were in-situ TEM annealed, for 5.5 hours at 873K. The twins are thermally very stable which would indicate that they arise during the growth process. The occurrence of these twins in the ZnSe film is explained by nucleation and growth of normal and twinned nuclei. Some of the ZnSe films grown on (10O)Ge substrates have low-angle boundaries indicating that the initial growth of the film is by the formation of islands.

Mbe Growth and Characterization of (GaAs)l−x(Si2)x and (GaAs)1−x(Si2)x/GaAs Superlattices on GaAs Substrates

1995 ◽  
Vol 379 ◽  
Author(s):  
H.P. Lee ◽  
F.J. Szalkowski ◽  
X. Zeng ◽  
J. Wolfenstine ◽  
J. W. Ager
Keyword(s):  
Molecular Beam ◽  
Stacking Faults ◽  
Cross Sectional ◽  
Mbe Growth ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Evaporation Source ◽  
Scattering Measurement

ABSTRACTLateral compositional graded (GaAs)1-x(Si2)x alloys were deposited on GaAs substrates in a III-V molecular beam epitaxy (MBE) chamber equipped with a electron-beam Si evaporation source. Single crystal GaAs-Si alloys were formed when the deposition temperature was 600°C or higher. The alloys were characterized by Energy Dispersive X-ray Spectroscopy (EDS), Raman scattering measurement and cross-sectional Transmission Electron Microscopy (XTEM). Dislocation-free (GaAs)1-x(Si2)x films of up to x = 0.07 were deposited. For alloys with x between 0.15 < < 0.25, the morphology deteriorates and a high density of stacking faults and micro-twins were observed.

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

Temperature Dependent Quasi-Periodic Facetting of AlAs Grown by MBE on (100) GaAs Substrates

1993 ◽  
Vol 312 ◽  
Author(s):  
Richard Mirin ◽  
Mohan Krishnamurthy ◽  
James Ibbetson ◽  
Arthur Gossard ◽  
John English ◽  
...  
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
High Energy Electron ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Facet Formation

AbstractHigh temperature (≥ 650°C) MBE growth of AlAs and AlAs/GaAs superlattices on (100) GaAs is shown to lead to quasi-periodic facetting. We demonstrate that the facetting is only due to the AlAs layers, and growth of GaAs on top of the facets replanarizes the surface. We show that the roughness between the AlAs and GaAs layers increases with increasing number of periods in the superlattice. The roughness increases to form distinct facets, which rapidly grow at the expense of the (100) surface. Within a few periods of the initial facet formation, the (100) surface has disappeared and only the facet planes are visible in cross-sectional transmission electron micrographs. At this point, the reflection high-energy electron diffraction pattern is spotty, and the specular spot is a distinct chevron. We also show that the facetting becomes more pronounced as the substrate temperature is increased from 620°C to 710°C. Atomic force micrographs show that the valleys enclosed by the facets can be several microns long, but they may also be only several nanometers long, depending on the growth conditions.

Oxidation Kinetics of Cu-Ni Alloy Observed by in situ UHV-TEM

2007 ◽  
Vol 1026 ◽  
Author(s):  
Li Sun ◽  
John E. Pearson ◽  
Judith C. Yang
Keyword(s):  
High Vacuum ◽  
Alloy Film ◽  
Ultra High Vacuum ◽  
Cross Sectional ◽  
Primary Mechanism ◽  
Transmission Electron ◽  
Ni Alloy ◽  
Cu Oxidation ◽  
Kinetics Of

AbstractThe nucleation and growth of Cu2O and NiO islands due to oxidation of Cu-24%Ni(001) films were monitored at various temperatures by in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM). In remarkable contrast to our previous observations of Cu and Cu-Au oxidation, irregular-shaped polycrystalline oxide islands were observed to form with respect to the Cu-Ni alloy film, and an unusual second oxide nucleation stage was noted. Similar to Cu oxidation, the cross-sectional area growth rate of the oxide island is linear indicating oxygen surface diffusion is the primary mechanism of oxide growth.

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