Structural and Electrical Characterization of CdSe Thin Films

1989 ◽  
Vol 164 ◽  
Author(s):  
Miltiadis K. Hatalis ◽  
Fuyu Lin ◽  
Michael R. Westcott
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Grain Growth ◽  
Electron Mobility ◽  
Electrical Characterization ◽  
Channel Length ◽  
Effective Electron ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Channel Lengths

AbstractThe structural and electrical properties of thin films of undoped and indium-doped cadmium selenide deposited on glass substrates have been investigated. The as-deposited films were found to be microcrystalline with grain size less than 10 nm. Grain growth occurred upon annealing. Enhanced grain growth was observed in the indium doped films. Transmission electron microscopy of in-situ annealed films revealed the formation of large single crystal areas having cubic structure with <111> as the dominant orientation. The resistivity and the effective electron mobility of polycrystalline cadmium selenide films were investigated as function of annealing conditions and device channel length. Reduction of the electrical resistivity and increase of the electron mobility was observed in devices with channel lengths less than 25μm.

scholarly journals Electrical Transport and Grain Growth in Solution-Cast, Chloride-Terminated Cadmium Selenide Nanocrystal Thin Films

ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 7513-7521 ◽  
Author(s):  
Zachariah M. Norman ◽  
Nicholas C. Anderson ◽  
Jonathan S. Owen
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Grain Growth ◽  
Electrical Transport ◽  
Solution Cast

DIRECT GROWTH OF EPITAXIAL La0.67Ca0.33MnO3 - δ THIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1611-1615 ◽  
Author(s):  
G. CAMPILLO ◽  
L. F. CASTRO ◽  
P. VIVAS ◽  
E. BACA ◽  
P. PRIETO ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Electrical Characterization ◽  
Annealing Treatment ◽  
Pure Oxygen ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Afm Analysis ◽  
Direct Growth

La 0.67 Ca 0.33 MnO 3 - δ thin films were deposited using a high-pressure dc-sputtering process. Pure oxygen at a pressure of 3.8 mbar was used as sputtering gas. The films were grown on (001) LaAlO 3 and (001) SrTiO 3 substrates at heater temperature of 850° without any annealing treatment. The formation of highly a-axis-oriented films with sharp interface with substrate surface is demonstrated by X-ray diffraction, transmission electron microscope (TEM), and atomic force microscope (AFM) analysis. Electrical characterization revealed a metal–insulator transition at T MI = 276 K, and magnetic characterization showed good magnetic properties with a PM–FM transition at TC ≈ 262 K.

Mechanisms of Grain Growth in Free-Standing Nanograined Gold Thin Films

2005 ◽  
Vol 907 ◽  
Author(s):  
J. A. Gregg ◽  
K Hattar ◽  
C H Lei ◽  
I M Robertson
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Structural Changes ◽  
Dislocation Slip ◽  
Free Standing ◽  
Transmission Electron ◽  
Enhanced Properties ◽  
Gold Thin Films ◽  
Annealing Experiments

AbstractRetention of the enhanced properties reported for nanograined metallic systems requires that the nanostructure be insensitive to temperature and deformation. In situ transmission electron microscopy annealing experiments were employed to investigate the structural changes associated with the formation of micron-sized grains in nanograined evaporated gold thin films. This abnormal grain growth occurs randomly throughout the film. Twinning but not dislocation slip occurs in the growing grains until the grain size is in the hundreds of nanometer range. The twins appear to hinder growth and for grain growth to continue the twins must either be annihilated or be able to grow with the grain concurrently.

scholarly journals Optical and Electrical Properties of Thin Films of CuS Nanodisks Ensembles Annealed in a Vacuum and Their Photocatalytic Activity

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
J. Santos Cruz ◽  
S. A. Mayén Hernández ◽  
F. Paraguay Delgado ◽  
O. Zelaya Angel ◽  
R. Castanedo Pérez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Peroxide ◽  
Photocatalytic Activity ◽  
Electrical Properties ◽  
Absolute Temperature ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Blue Solution

Effects on the optical, electrical, and photocatalytic properties of undoped CuS thin films nanodisks vacuum annealed at different temperatures were investigated. The chemical bath prepared CuS thin films were obtained at 40°C on glass substrates. The grain size of13.5±3.5 nm was computed directly from high-resolution transmission electron microscopy (HRTEM) images. The electrical properties were measured by means of both Hall effect at room temperature and dark resistivity as a function of the absolute temperature 100–330 K. The activation energy values were calculated as 0.007, 0.013, and 0.013 eV for 100, 150, and 200°C, respectively. The energy band gap of the films varied in the range of 1.98 up to 2.34 eV. The photocatalytic activity of the CuS thin film was evaluated by employing the degradation of aqueous methylene blue solution in the presence of hydrogen peroxide. The CuS sample thin film annealed in vacuum at 150°C exhibited the highest photocatalytic activity in presence of hydrogen peroxide.

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

Effects of Surface Energy on the Microstructures of Thin Sb Films

1990 ◽  
Vol 202 ◽  
Author(s):  
L. H. Chou ◽  
M. C. Kuo
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Grain Growth ◽  
Grain Orientation ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Diffraction Peaks

ABSTRACTThin Sb films have been prepared on glass substrates by rapid thermal evaporation. Films with thicknesses varied from 260 Å to 1300Å were used for the study. X-ray diffraction data showed that for films deposited at room substrate temperature, an almost random grain orientation was observed for films of 1300 Å thick and a tendency for preferred grain orientation was observed as films got thinner. For films of 260 Å thick, only two x-ray diffraction peaks--(003) and (006) were observed. After thermal annealing, secondary grains grew to show preferred orientation in all the films. This phenomenon was explained by surface-energy-driven secondary grain growth. This paper reports the effects of annealing time and film thickness on the secondary grain growth and the evolution of thin Sb film microstmctures. Transmission electron microscopy (TEM) and x-ray diffraction were used to characterize the films.

WO3:Mo and WO3:Ti Thin Films Deposited by Spray Pyrolysis: The Influence of Metallic Concentration on Physical Properties: An Electron Microscopy and Atomic Force Study

2019 ◽  
Vol 286 ◽  
pp. 49-63
Author(s):  
Dwight Acosta ◽  
Francisco Hernández ◽  
Alejandra López-Suárez ◽  
Carlos Magaña
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ultra Violet ◽  
Surface Characteristics ◽  
Structural Defects ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Resolution Electron

WO3:Mo and WO3:Ti thin films have been deposited on FTO/Glass substrates by the pulsed chemical spray technique at a substrate temperature of Ts= 450°C. The influence of Mo and Ti doping on the structural, electrical, and optical behavior of WO3thin films, has been studied by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), Ultra Violet and Visible Spectrometry (UV-VIS), and Surface Conductivity Methods (Four Points). Doped WO3films presents similar polycrystalline structures but with noticeable modifications in surface configurations at micrometric and nanometric levels, as the Mo and Ti concentration is systematically increased in the starting sprayed solution. From processed High-Resolution Electron Micrographs (HREM), a low density of structural defects was found on pure and doped WO3grains. This lead to conclude that variations in films surface characteristics are mainly related with metallic doping concentrations which in turn, have noticeable influence in electrical and optical behaviors reported in this work.

scholarly journals Electrical characterization of aluminum (Al) thin films measured by using four- point probe method

2013 ◽  
Vol 8 (2) ◽  
pp. 31-36 ◽  
Author(s):  
GP Panta ◽  
DP Subedi
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Electrical Characterization ◽  
Probe Method ◽  
Glass Substrates ◽  
Engineering And Technology

This paper reports the results of electrical characterization of aluminum thin films. Uniform Al thin films were deposited by physical vapor deposition (PVD) technique on glass substrates. The electrical resistivity of the films as a function of film thickness was studied. These parameters have been measured by four-point probe method. The electrical resistivity was obtained by the measurement of current (in mA) and voltage in (mV) through the probe. The results showed that resistivity of the film decreases linearly with the film thickness in the range of the thickness studied in this work. Kathmandu University Journal of Science, Engineering and Technology Vol. 8, No. II, December, 2012, 31-36 DOI: http://dx.doi.org/10.3126/kuset.v8i2.7322

Nanostructured Silicon thin films Deposited by PECVD in the Presence of Silicon Nanoparticles

1997 ◽  
Vol 467 ◽  
Author(s):  
G. Viera ◽  
P. Roca i Cabarrocas ◽  
S. Hamma ◽  
S. N. Sharma ◽  
J. Costa ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nanoparticles ◽  
Film Growth ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Silicon Matrix ◽  
Silicon Thin Films ◽  
Nanostructured Silicon ◽  
Transmission Electron

ABSTRACTNanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 °C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1–2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

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