Aerosol Deposition and Film Formation using Silicon Powder

1990 ◽  
Vol 206 ◽  
Author(s):  
Kamesh V. Gadepally ◽  
K. B. Tennal ◽  
R. M. Hawk ◽  
W. D. Brown
Keyword(s):  
Charged Particle ◽  
Film Formation ◽  
Silicon Powder ◽  
Aerosol Deposition ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Particle Charge ◽  
Electrostatic Deposition ◽  
Deposition Parameters ◽  
Heat Treated

ABSTRACTAn electrostatic deposition process which utilizes charged particle motion in an electric field has been successfully developed as a method for depositing coatings of silicon films. Coatings have been deposited on conducting, Insulating, and semiconducting surfaces after making suitable changes in deposition parameters. This process along with parameters Important to the deposition process which Include particle charge and size characteristics are discussed. These coatings are subsequently heat treated. Experimental results for depositions on silicon substrates are presented. Characterization in terms of chemical, electrical and physical properties of the film are presented.

Spinning deposition of silica and silica-titania optical coatings: A round robin test

1998 ◽  
Vol 13 (3) ◽  
pp. 731-738 ◽  
Author(s):  
M. Guglielmi ◽  
A. Martucci ◽  
R. M. Almeida ◽  
H. C. Vasconcelos ◽  
E. M. Yeatman ◽  
...  
Keyword(s):  
Refractive Index ◽  
Sol Gel ◽  
Round Robin ◽  
Silicon Substrates ◽  
Round Robin Test ◽  
Silica Coatings ◽  
Deposition Parameters ◽  
Heat Treated ◽  
Solution Preparation ◽  
Titania Coatings

A round robin test has been performed on sol-gel processing for the deposition of silica and silica-titania films on silicon substrates by spin-coating. Three solution preparation processes for silica coatings and three for silica-titania coatings were used to prepare samples at each of the participating laboratories. The films have been characterized mainly by thickness (profilometry and ellipsometry measurements), refractive index, porosity, and optical scattering. Different processes gave different thicknesses. Thickness differences were found in films prepared by the same process and by the same deposition parameters, but in different laboratories, when heat-treated at 500 °C. Variations were reduced in samples annealed at 1000 °C. Refractive index and porosity measurements suggest that variations were due to structural differences, particularly porosity. Furthermore, films heat-treated at 500 °C were not completely stabilized, and showed index and porosity variations after six months.

Hybrid Aerosol Deposition Process for Ceramic Coatings

2018 ◽  
Vol 87 (2) ◽  
pp. 136-143 ◽  
Author(s):  
Kentaro SHINODA ◽  
Takanori SAEKI ◽  
Jun AKEDO
Keyword(s):  
Aerosol Deposition ◽  
Deposition Process ◽  
Ceramic Coatings

Novel Multilayer Process for CuInSe2 Thin Film Formation by Rapid Thermal Processing

1997 ◽  
Vol 485 ◽  
Author(s):  
Chih-hung Chang ◽  
Billy Stanbery ◽  
Augusto Morrone ◽  
Albert Davydov ◽  
Tim Anderson
Keyword(s):  
Thermal Processing ◽  
Physical Vapor Deposition ◽  
Film Formation ◽  
Rapid Thermal Processing ◽  
Precursor Film ◽  
Bilayer Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Cuinse2 Thin Film

AbstractCuInSe2 thin films have been synthesized from binary precursors by Rapid Thermal Processing (RTP) at a set-point temperature of 290°C for 70 s. With appropriate processing conditions no detrimental Cu2-xSe phase was detected in the CIS films. The novel binary precursor approach consisted of a bilayer structure of In-Se and Cu-Se compounds. This bilayer structure was deposited by migration enhanced physical vapor deposition at a low temperature (200°C) and the influence of deposition parameters on the precursor film composition was determined. The bilayer structure was then processed by RTP and characterized for constitution by X-ray diffraction and for composition by Wavelength Dispersive X-ray Spectroscopy.

Process Design for Non-Alloyed Contacts to InP-Based Laser Devices

1990 ◽  
Vol 181 ◽  
Author(s):  
A. Katz ◽  
W. C. Dautremont-Smith ◽  
S. N. G. Chu ◽  
S. J. Pearton ◽  
M. Geva ◽  
...  
Keyword(s):  
Process Design ◽  
Ohmic Contacts ◽  
Electron Gun ◽  
Deposition Parameters ◽  
Heat Treated ◽  
Single Side ◽  
Almost All ◽  
P Type ◽  
Laser Devices ◽  
Potential Use

ABSTRACTPl/Ti and W thin films on n- and p- type InP and related materials have been investigated for potential use as a refractory ohmic contacts for conventional, single-side coplanar contacted and self-aligned barrier hetcrostructurc laser devices. Pt and Ti films were deposited sequentially by electron gun evaporation, while the W layer was rf sputtered, both onto p+ -In0.53Ga0.47As (Zn doped 5×l018cm−3) and n−- InP (S doped, 5×l018cm−3). The deposition parameters of the two metal systems were optimized to produce adherent films with the lowest possible induced stress. Almost all the studied systems performed as ohmic contacts already as-deposited and were heat treated by means of rapid thermal processing in the temperature range of 300–900°C. The final contact processing conditions were tuned to provide the lowest possible contact resistance values accompanied by low mechanical stress and stable microstructure.

Formation of silver films for advanced electrical properties by using aerosol deposition process

2018 ◽  
Vol 57 (11S) ◽  
pp. 11UF05 ◽  
Author(s):  
Myung-Yeon Cho ◽  
Dong-Won Lee ◽  
Ik-Soo Kim ◽  
Won-Ho Lee ◽  
Je-Wook Yoo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Aerosol Deposition ◽  
Deposition Process ◽  
Silver Films

Electrical Properties of Thin Film and Bulk Diamond Treated in Hydrogen Plasma

1989 ◽  
Vol 162 ◽  
Author(s):  
Sacharia Albin ◽  
Linwood Watkins
Keyword(s):  
Natural Diamond ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Free Standing ◽  
Before And After ◽  
Type Ia ◽  
Bulk Diamond

ABSTRACTCurrent-voltage characteristics of type Ia synthetic diamond, type IIb natural diamond and free-standing diamond films were measured before and after hydrogenation. The diamond films were polycrystalline, deposited on sacrificial silicon substrates using a microwave chemical vapor deposition process. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I-V characteristics of the samples. The concentration of electrically active hydrogen was determined from the I-V data. Hydrogen passivation of deep traps in diamond is clearly demonstrated.

Fabrication and electrochemical characterization of super-capacitor based on three-dimensional composite structure of graphene and a vertical array of carbon nanotubes

2018 ◽  
Vol 52 (22) ◽  
pp. 3039-3044 ◽  
Author(s):  
Daniel Choi ◽  
Eui-Hyeok Yang ◽  
Waqas Gill ◽  
Aaron Berndt ◽  
Jung-Rae Park ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Composite Structure ◽  
Graphene Layer ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Vertical Array ◽  
Pressure Chemical

We have demonstrated a three-dimensional composite structure of graphene and carbon nanotubes as electrodes for super-capacitors. The goal of this study is to fabricate and test the vertically grown carbon nanotubes on the graphene layer acting as a spacer to avoid self-aggregation of the graphene layers while realizing high active surface area for high energy density, specific capacitance, and power density. A vertical array of carbon nanotubes on silicon substrates was grown by a low-pressure chemical vapor deposition process using anodized aluminum oxide nanoporous template fabricated on silicon substrates. Subsequently, a graphene layer was grown by another low-pressure chemical vapor deposition process on top of a vertical array of carbon nanotubes. The Raman spectra confirmed the successful growth of carbon nanotubes followed by the growth of high-quality graphene. The average measured capacitance of the three-dimensional composite structure of graphene-carbon nanotube was 780 µFcm−2 at 100 mVs−1.

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