Raman Studies of Znse Lattice Damage and Recovery Due to N Implantation and Annealing

1990 ◽  
Vol 209 ◽  
Author(s):  
A. Deneuville ◽  
P. Ayyub ◽  
C. H. Park ◽  
T. Anderson ◽  
P. Lowen ◽  
...  
Keyword(s):  
Residual Stress ◽  
Annealing Temperature ◽  
Full Width ◽  
Half Maximum ◽  
Deep Minimum ◽  
Near Surface ◽  
Implantation Damage ◽  
Lattice Damage ◽  
Two Peaks ◽  
Zn Vacancy

ABSTRACTThe “bulk” and near-surface regions of N implanted heteroepitaxial ZnSe films were studied using the full width at half maximum (FWHM) of the LO phonon Raman line. The “bulk” FWHM has a minimum below an annealing temperature Ta = 400°C, and increases for higher Ta. This is attributed to the relaxation of residual stress, and to an increased stress from the formation of Zn vacancies. The surface FWHM has a deep minimum near Ta = 500°C which is attributed to the relaxation of the implantation damage at lower Ta, and stress induced by Zn vacancy formation at higher Ta. Another wider peak is found just after implantation and for Ta = 600°C, and results from a sum of two peaks attributed to the heavily damaged region around Rp and to the region with Zn vacancies.

scholarly journals Effect of Annealing on Innovative CsPbI3-QDs Doped Perovskite Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 101
Author(s):  
Pao-Hsun Huang ◽  
Yu-Hao Chen ◽  
Shui-Yang Lien ◽  
Kuan-Wei Lee ◽  
Na-Fu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Full Width Half Maximum ◽  
Annealing Temperature ◽  
Full Width ◽  
Half Maximum ◽  
Lead Iodide ◽  
High Quality ◽  
Peak Fitting ◽  
Hot Injection ◽  
Different Temperatures

In this study, a simple hot-injection method to synthesize high-quality inorganic perovskite cesium lead iodide (CsPbI3) quantum-dots (QDs) was demonstrated. Adding CsPbI3 QDs into the organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a composite perovskite film, annealed by different temperatures, was found to be effectively enhanced by the perovskite crystallization. The intensity of the preferred peak (110) of MAPbI3 was enhanced by increasing the size of the crystal and reducing the cluster crystal. The densest film can be found at annealing temperature of 140 °C. The full width half maximum of MAPbI3 and CsPbI3 was analyzed through XRD peak fitting. This was a huge breakthrough for QDs doped perovskite films.

Quantitative Evaluation of Strain in Epitaxial 2H-AlN Layers

2011 ◽  
Vol 324 ◽  
pp. 213-216
Author(s):  
Richard Nader ◽  
Jörg Pezoldt
Keyword(s):  
Residual Stress ◽  
Silicon Substrate ◽  
Phonon Mode ◽  
Phonon Frequency ◽  
Crystalline Quality ◽  
Full Width ◽  
Half Maximum ◽  
Lower Stress ◽  
Frequency Shifts

To improve the quality of AlN layer deposit on SiC/Si, different Ge amounts (0.25, 0.5, 1, 2ML) were deposited before the carbonization process at the silicon substrate in order to reduce the lattice parameters mismatch between Si and SiC grown layers. The residual stress of the hexagonal AlN layers derives from the phonon frequency shifts of the E1(TO) phonon mode. The crystalline quality of the AlN layer is correlated to and investigated by the full width of the half maximum (FWHM) and the intensity of E1(TO) mode of the 2H-AlN. Best crystalline quality and lower stress value are found in the case where 1ML of Ge amount is predeposited. The E1(TO) mode phonon frequency shifts-down by 3 cm-1/GPa with respect to an unstrained layer.

scholarly journals Influence of Interfacial Neighborhood on Residual Stress due to Deposition of TiN Thin Films Made by PVD

2005 ◽  
Vol 490-491 ◽  
pp. 601-606
Author(s):  
Hajime Hirose ◽  
Shinya Suzuki ◽  
Masahide Gotoh ◽  
Toshihiko Sasaki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Stress Measurement ◽  
X Rays ◽  
Full Width ◽  
Half Maximum ◽  
X Ray ◽  
Tin Thin Films

In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion.

Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates

2009 ◽  
Vol 615-617 ◽  
pp. 943-946 ◽  
Author(s):  
Elena Tschumak ◽  
Katja Tonisch ◽  
Jörg Pezoldt ◽  
Donat J. As
Keyword(s):  
Residual Stress ◽  
Gallium Nitride ◽  
High Resolution ◽  
Silicon Substrates ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Grown Layer ◽  
X Ray ◽  
Cubic Gan

Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction. In the case of cubic GaN layers with equal layer thickness an improvement of the layer quality in terms of full width of the half maximum can be achieved by using higher carbonization temperatures. The higher crystalline quality led to an in¬crease of the residual stress in the grown layer. An increase in the thickness of the cubic Gallium Nitride allows to improve the crystallinity and to reduce the residual stress.

Boron Gettering by Fluorine in Ion Implanted Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
L.Ya. Krasnobaev ◽  
J. J. Cuomo ◽  
O. I. Vyletalina
Keyword(s):  
Solid Solubility ◽  
Annealing Temperature ◽  
Boron Concentration ◽  
Surface Region ◽  
Fluorine Concentration ◽  
Implantation Energy ◽  
Near Surface ◽  
Boron Ions ◽  
Two Peaks ◽  
Made In

ABSTRACTSi was implanted with fluorine and boron ions. Boron gettering by fluorine was studied. By varying the implantation energy of F+ ions, three types of samples were made in which Rp(F)<Rp(B), Rp(F)∼Rp(B) and Rp(F)>Rp(B). There are three special regions in which the redistribution of Boron atoms during annealing differ. The first one is the near surface region in which the Boron concentration exceeds the value of Boron solid solubility at the annealing temperature. In this region, B atoms are intensively redistributed and have two peaks of concentration. The positions of these peaks coincide with the position of the peaks on the fluorine concentration profile. In the second specific region, the boron concentration is less than the value of solid solubility in Si and higher than the value of the intrinsic carrier concentration in Si at the annealing temperature. In this region, the B concentration was identical in all samples, and it exponentially decreased to the value of 5×108 cm−3. The slope of the boron concentration in the third region dictates the depth of p-n junction. A possible mechanism of boron gettering by fluorine is discussed.

scholarly journals Spectroscopic Studies of Laser-Based Far-Ultraviolet Plasma Light Source

2021 ◽  
Vol 11 (15) ◽  
pp. 6919
Author(s):  
Majid Masnavi ◽  
Martin Richardson
Keyword(s):  
Dense Plasma ◽  
Wavelength Region ◽  
Spectroscopic Studies ◽  
Radiation Hydrodynamics ◽  
Full Width ◽  
Half Maximum ◽  
Laser Plasmas ◽  
Series Of Experiments ◽  
Far Ultraviolet ◽  
Radiation Conversion

A series of experiments is described which were conducted to measure the absolute spectral irradiances of laser plasmas created from metal targets over the wavelength region of 123–164 nm by two separate 1.0 μm lasers, i.e., using 100 Hz, 10 ns, 2–20 kHz, 60–100 ns full-width-at-half-maximum pulses. A maximum radiation conversion efficiency of ≈ 3%/2πsr is measured over a wavelength region from ≈ 125 to 160 nm. A developed collisional-radiative solver and radiation-hydrodynamics simulations in comparison to the spectra detected by the Seya–Namioka-type monochromator reveal the strong broadband experimental radiations which mainly originate from bound–bound transitions of low-ionized charges superimposed on a strong continuum from a dense plasma with an electron temperature of less than 10 eV.

scholarly journals Time to peak and full width at half maximum in MR perfusion: valuable indicators for monitoring moyamoya patients after revascularization

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Adam Huang ◽  
Chung-Wei Lee ◽  
Hon-Man Liu
Keyword(s):  
Study Data ◽  
Unknown Etiology ◽  
Dynamic Susceptibility ◽  
Full Width ◽  
Half Maximum ◽  
Mr Perfusion ◽  
Dynamic Susceptibility Contrast ◽  
Time To Peak ◽  
Mr Perfusion Imaging ◽  
Outcome Monitoring

AbstractMoyamoya disease (MMD) is a chronic, steno-occlusive cerebrovascular disorder of unknown etiology. Surgical treatment is the only known effective method to restore blood flow to affected areas of the brain. However, there are lack of generally accepted noninvasive tools for therapeutic outcome monitoring. As dynamic susceptibility contrast (DSC) magnetic resonance imaging (MRI) is the standard MR perfusion imaging technique in the clinical setting, we investigated a dataset of nineteen pediatric MMD patients with one preoperational and multiple periodic DSC MRI examinations for four to thirty-eight months after indirect revascularization. A rigid gamma variate model was used to derive two nondeconvolution-based perfusion parameters: time to peak (TTP) and full width at half maximum (FWHM) for monitoring transitional bolus delay and dispersion changes respectively. TTP and FWHM values were normalized to the cerebellum. Here, we report that 74% (14/19) of patients improve in both TTP and FWHM measurements, and whereof 57% (8/14) improve more noticeably on FWHM. TTP is in good agreement with Tmax in estimating bolus delay. Our study data also suggest bolus dispersion estimated by FWHM is an additional, informative indicator in pediatric MMD monitoring.

Preparation of highly c-axis oriented AlN thin films on Hastelloy tapes with Y2O3 buffer layer for flexible SAW sensor applications

2016 ◽  
Vol 09 (02) ◽  
pp. 1650023 ◽  
Author(s):  
Bin Peng ◽  
Jianying Jiang ◽  
Guo Chen ◽  
Lin Shu ◽  
Jie Feng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Smooth Surface ◽  
Piezoelectric Coefficient ◽  
Piezoelectric Properties ◽  
Mean Square ◽  
Full Width ◽  
Half Maximum ◽  
Sensor Applications ◽  
Saw Sensor ◽  
Y2o3 Buffer Layer

Highly c-axis oriented aluminum nitrade (AlN) films were successfully deposited on flexible Hastelloy tapes by middle-frequency magnetron sputtering. The microstructure and piezoelectric properties of the AlN films were investigated. The results show that the AlN films deposited directly on the bare Hastelloy substrate have rough surface with root mean square (RMS) roughness of 32.43[Formula: see text]nm and its full width at half maximum (FWHM) of the AlN (0002) peak is [Formula: see text]. However, the AlN films deposited on the Hastelloy substrate with Y2O3 buffer layer show smooth surface with RMS roughness of 5.46[Formula: see text]nm and its FWHM of the AlN (0002) peak is only [Formula: see text]. The piezoelectric coefficient d[Formula: see text] of the AlN films deposited on the Y2O3/Hastelloy substrate is larger than three times that of the AlN films deposited on the bare Hastelloy substrate. The prepared highly c-axis oriented AlN films can be used to develop high-temperature flexible SAW sensors.

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