Preparation of Boron Nitride Films by Rf Reactive Sputtering

1991 ◽  
Vol 228 ◽  
Author(s):  
P. K. Banerjee ◽  
B. Chaterjee ◽  
J. S. Kim ◽  
S. S. Mitra

ABSTRACTBoron nitride films were deposited by rf reactive sputtering. The composition of the film was determined by X-ray photo-electron spectroscopy(XPS). Optical properties of boron nitride were studied by IR spectroscopy. Resultant films showed optical characteristics similar to those of hexagonal boron nitride. The ratio of boron to nitrogen was varied from 3.11 to 1.45 by varying the amount of nitrogen. Resulting films have refractive index in the range of 2.05 – 3.21.

Author(s):  
L. V. Kotova ◽  
L. A. Altynbaev ◽  
M. O. Zhukova ◽  
B. T. Hogan ◽  
A. Baldycheva ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Yifei Li ◽  
Xin Wen ◽  
Changjie Tan ◽  
Ning Li ◽  
Ruijie Li ◽  
...  

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...


Author(s):  
J. Damisa ◽  
J. O. Emegha ◽  
I. L. Ikhioya

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.


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