Nucleation, Cluster Growth, and Structure of Crystalline C60 and C70

1992 ◽  
Vol 270 ◽  
Author(s):  
Nan Yao ◽  
S. K. Behal ◽  
C. F. Klein ◽  
M. M. Disko ◽  
S. C. Fung ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Strain Field ◽  
Surface Defects ◽  
Surface Strain ◽  
Cluster Growth ◽  
Twin Structure ◽  
Transmission Electron ◽  
Initial Nucleation ◽  
Reflection Electron Microscopy ◽  
Diffraction Patterns

ABSTRACTThe nucleation and cluster growth of C60 and C70 crystallites on various substrates at ambient temperature have been investigated using electron microscopy. It was found that the initial nucleation is closely associated with surface defects, and the fullerenes are much more strongly bonded to each other than to the substrate. Sublimed C60 or C70 crystallites nucleate at the step edge in the liquid state and are aligned with the step walls and terraces through the process of coalescence. Reflection Electron Microscopy (REM) studies have shown an abnormal profile of C60 grown crystals as a result of the interaction of C60 molecules with the surface strain field during crystal growth. Transmission electron diffraction patterns reveal a twin structure with (110) habit plane for the low temperature ordered phase.

Dynamics of In Cluster Growth During InP(110) Surface Dissociation Studied by in-situ Reflection Electron Microscopy

1995 ◽  
Vol 404 ◽  
Author(s):  
M. Gajdardziska-Josifovska ◽  
M. H. Malay ◽  
David J. Smith
Keyword(s):  
Electron Microscopy ◽  
Contact Angle ◽  
Annealing Process ◽  
Cluster Growth ◽  
Surface Cluster ◽  
Surface Steps ◽  
Transmission Electron ◽  
Annealing Effects ◽  
Reflection Electron Microscopy

AbstractAnnealing effects on InP (110) surfaces were observed in situ using a modified ultrahighvacuum transmission electron microscope equipped with a specimen heating holder. Reflection electron microscopy (REM) was used to record the dynamics of nucleation and growth of liquid In clusters at 650°C, following the desorption of P from the surface. These droplets showed no preference for nucleation at surface steps, and the steps appeared stationary throughout the annealing process. Two distinct types of In cluster growth rates and shape evolutions were detected. A model was developed to decouple height and length information in the REM images. Contact angle and volume above the InP(110) surface were calculated from the dynamic data. The change of contact angle with time provides evidence for sub-surface cluster etching.

Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

1993 ◽  
Vol 312 ◽  
Author(s):  
X. C. Zhou ◽  
J. Jiang ◽  
A. Y. Du ◽  
J. W. Zhao ◽  
S. M. Mu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Direct Evidence ◽  
Surface Strain ◽  
Misfit Dislocations ◽  
Strain Fields ◽  
Transmission Electron ◽  
Gaas Films ◽  
Reflection Electron Microscopy

AbstractUsing reflection electron microscopy (REM), transmission electron microscopy (TEM), and Nomarski optical microscopy we obtained direct evidence that local surface strain-fields, originated from misfit dislocations, are responsible for the formation of morphological crosshatches during molecular beam epitaxy of lattice mismatched InGaAs/GaAs layers. A mechanism is proposed to correlate the formation of the crosshatched patterns with the variation of the growth rate across the epitaxial surface under the perturbation of network shaped strain-fields in the surface.

Observation of ferroelectric domain boundaries in BaTiO3 with REM

1992 ◽  
Vol 50 (1) ◽  
pp. 360-361
Author(s):  
Feng Tsal
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Ferroelectric Material ◽  
Crystal Surfaces ◽  
Etching Technique ◽  
Surface Steps ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Reflection Electron Microscopy ◽  
Etched Surface

The earlier work of transmission electron microscopy(TEM) on ferroelectric domains have been concentrated on the studies of domain configurations and contrast theory, Scanning electron microscopy(SEM) is also used to study ferroelectric material surfaces and has revealed various domain boundaries on the chemical-etched surface of BaTiO3. However, the method is destructive and largely dependent on the etching technique. Reflection electron microscopy (REM) has recently been developed to study crystal surfaces, especially the surface defects such as surface steps and emerging dislocations. This paper presents the observation of 90° domain boundaries in BaTiO3 single crystal with REM and concentrates on the contrast of 90° domain boundaries.

Zero-loss omega-filtered REM and RHEED on the new Zeiss 912

1991 ◽  
Vol 49 ◽  
pp. 616-617
Author(s):  
J.C.H. Spence ◽  
J. Mayer
Keyword(s):  
Electron Microscopy ◽  
Materials Science ◽  
Surface States ◽  
Ccd Camera ◽  
Dark Field ◽  
Ion Pump ◽  
Magnetic Imaging ◽  
Reflection Electron Microscopy ◽  
Diffraction Patterns ◽  
Large Background

The Zeiss 912 is a new fully digital, side-entry, 120 Kv TEM/STEM instrument for materials science, fitted with an omega magnetic imaging energy filter. Pumping is by turbopump and ion pump. The magnetic imaging filter allows energy-filtered images or diffraction patterns to be recorded without scanning using efficient parallel (area) detection. The energy loss intensity distribution may also be displayed on the screen, and recorded by scanning it over the PMT supplied. If a CCD camera is fitted and suitable new software developed, “parallel ELS” recording results. For large fields of view, filtered images can be recorded much more efficiently than by Scanning Reflection Electron Microscopy, and the large background of inelastic scattering removed. We have therefore evaluated the 912 for REM and RHEED applications. Causes of streaking and resonance in RHEED patterns are being studied, and a more quantitative analysis of CBRED patterns may be possible. Dark field band-gap REM imaging of surface states may also be possible.

Effects of High-Energy Ions on Synthetic Quartz

1972 ◽  
Vol 30 ◽  
pp. 544-545
Author(s):  
Joseph J. Comer ◽  
Charles Bergeron ◽  
Lester F. Lowe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Energy ◽  
Transmission Electron ◽  
Kikuchi Lines ◽  
High Energy Ions ◽  
Diffraction Patterns ◽  
Dauphiné Twinning ◽  
Beam Damage

Using a Van De Graaff Accelerator thinned specimens were subjected to bombardment by 3 MeV N+ ions to fluences ranging from 4x1013 to 2x1016 ions/cm2. They were then examined by transmission electron microscopy and reflection electron diffraction using a 100 KV electron beam.At the lowest fluence of 4x1013 ions/cm2 diffraction patterns of the specimens contained Kikuchi lines which appeared somewhat broader and more diffuse than those obtained on unirradiated material. No damage could be detected by transmission electron microscopy in unannealed specimens. However, Dauphiné twinning was particularly pronounced after heating to 665°C for one hour and cooling to room temperature. The twins, seen in Fig. 1, were often less than .25 μm in size, smaller than those formed in unirradiated material and present in greater number. The results are in agreement with earlier observations on the effect of electron beam damage on Dauphiné twinning.

The annealed (0001) α-alumina surface and its influence on thin-film growth

1995 ◽  
Vol 53 ◽  
pp. 336-337
Author(s):  
Michael W. Bench ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Energy Calculations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Low Energy Electron ◽  
Surface Nature

The growth of semiconductors, superconductors, metals, and other insulators has been investigated using alumina substrates in a variety of orientations. The surface state of the alumina (for example surface reconstruction and step nature) can be expected to affect the growth nature and quality of the epilayers. As such, the surface nature has been studied using a number of techniques including low energy electron diffraction (LEED), reflection electron microscopy (REM), transmission electron microscopy (TEM), molecular dynamics computer simulations, and also by theoretical surface energy calculations. In the (0001) orientation, the bulk alumina lattice can be thought of as a layered structure with A1-A1-O stacking. This gives three possible terminations of the bulk alumina lattice, with theoretical surface energy calculations suggesting that termination should occur between the Al layers. Thus, the lattice often has been described as being made up of layers of (Al-O-Al) unit stacking sequences. There is a 180° rotation in the surface symmetry of successive layers and a total of six layers are required to form the alumina unit cell.

Examination of Extra Electron Diffraction Spots Observed in Deuterium-Irradiated Silicon by Using Parallel Electron Beam Illumination

1990 ◽  
Vol 48 (2) ◽  
pp. 490-491
Author(s):  
Ryuichiro Oshima ◽  
Shoichiro Honda ◽  
Tetsuo Tanabe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Single Crystal ◽  
Mixed Solution ◽  
Parallel Beam ◽  
Defect Clusters ◽  
Float Zone ◽  
Transmission Electron ◽  
Extra Electron ◽  
Diffraction Patterns

In order to examine the origin of extra diffraction spots and streaks observed in selected area diffraction patterns of deuterium irradiated silicon, systematic diffraction experiments have been carried out by using parallel beam illumination.Disc specimens 3mm in diameter and 0.5mm thick were prepared from a float zone silicon single crystal(B doped, 7kΩm), and were chemically thinned in a mixed solution of nitric acid and hydrogen fluoride to make a small hole at the center for transmission electron microscopy. The pre-thinned samples were irradiated with deuterium ions at temperatures between 300-673K at 20keV to a dose of 1022ions/m2, and induced lattice defects were examined under a JEOL 200CX electron microscope operated at 160kV.No indication of formation of amorphous was obtained in the present experiments. Figure 1 shows an example of defects induced by irradiation at 300K with a dose of 2xl021ions/m2. A large number of defect clusters are seen in the micrograph.

Contrasts of planar defects in reflection electron microscopy

1993 ◽  
Vol 51 ◽  
pp. 1004-1005
Author(s):  
Feng Tsai ◽  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Practical Importance ◽  
Theoretical Treatment ◽  
Crystal Surfaces ◽  
Planar Defects ◽  
Surface Steps ◽  
Surface Reconstructions ◽  
Domain Boundaries ◽  
Reflection Electron Microscopy

Reflection electron microscopy (REM) has been used to study surface defects such as surface steps, dislocations emerging on crystal surfaces, and surface reconstructions. However, only a few REM studies have been reported about the planar defects emerging on surfaces. The interaction of planar defects with surfaces may be of considerable practical importance but so far there seems to be only one relatively simple theoretical treatment of the REM contrast and very little experimental evidence to support its predications. Recently, intersections of both 90° and 180° ferroelectric domain boundaries with BaTiO3 crystal surfaces have been investigated by Tsai and Cowley with REM.The REM observations of several planar defects, such as stacking faults and domain boundaries have been continued by the present authors. All REM observations are performed on a JEM-2000FX transmission electron microscope. The sample preparations may be seen somewhere else. In REM, the incident electron beam strikes the surface of a crystal with a small glancing angle.

Dissolution Characteristics and Morphology of Large-sized Scorodite Particles Synthesized from Fe(II) and As(V) in Aqueous Solution

2012 ◽  
Vol 31 (4-5) ◽  
pp. 451-458 ◽  
Author(s):  
S. Fujieda ◽  
K. Shinoda ◽  
T. Inanaga ◽  
M. Abumiya ◽  
S. Suzuki
Keyword(s):  
Electron Microscopy ◽  
Aqueous Solution ◽  
Surface Defects ◽  
Atmospheric Temperature ◽  
Orthorhombic Structure ◽  
X Ray ◽  
Long Term Storage ◽  
Transmission Electron ◽  
Term Storage

AbstractA novel process for preparing scorodite particles with a diameter of approximately 20 µm from Fe(II) and As(V) in aqueous solution has been developed by DOWA Metals and Mining. In the present study, the dissolution characteristics of iron and arsenic from the scorodite particles synthesized by this process have been investigated under different conditions. The results show that the concentration of arsenic dissolved from the particles in aqueous solution is very low, but it has a complicated dependence on the temperature and pH of the solution. Transmission electron microscopy (TEM) with an energy dispersive X-ray spectrometer (EDS) was used to analyze the morphology, structure, and composition of the scorodite particles. The results indicate that the scorodite particles exhibit a nearly octahedral shape with planes composed of almost (111) planes in the orthorhombic structure. The concentration of iron at the surface of the particles is higher than that of iron inside of the particles. This characteristic morphology, along with the minimal surface defects of the scorodite particles, is considered to be responsible for the low dissolution of arsenic from the particles in aqueous solution. Atmospheric temperature and solution conditions were also found to be important for the safe, long-term storage of arsenic using scorodite particles.

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