Xps Study of the Nitridation Process of A Polytitanocarbosilane into Si-Ti-N-O Ceramics

1992 ◽  
Vol 271 ◽  
Author(s):  
G. Granozzi ◽  
A. Glisenti ◽  
R. Bertoncello ◽  
G. D. Soraru
Keyword(s):  
Titanium Nitride ◽  
Firing Temperature ◽  
Photoelectron Spectroscopy ◽  
Transformation Process ◽  
Nitrogen Enrichment ◽  
X Ray ◽  
Nitridation Process ◽  
Nitride Ceramics ◽  
Xps Study

ABSTRACTThe nitridation process of a polytitanocarbosilane, leading to the formation of a Si-Ti-N-O ceramics, has been investigated mainly by means of X-ray photoelectron spectroscopy (XPS). Ti2p spectra collected on samples fired at various stages of the transformation process clearly shown that Ti-N bonds of TiOxNy mixed units start to form at 500 °C. By increasing the firing temperature, the Ti2p peak shifts toward values typical of titanium nitride ceramics, so indicating the progressive nitrogen enrichment of the mixed units up to the formation of a TiN phase.

The Platinum∕Titanium-Nitride Interface: X-Ray Photoelectron Spectroscopy Studies

2012 ◽  
Vol 15 (6) ◽  
pp. B79
Author(s):  
Nikola Matić ◽  
Gary S. Chottiner ◽  
Frank Ernst ◽  
Daniel Scherson
Keyword(s):  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Spectroscopy Studies

Atomic Layer Deposition of TiN below 600 K Using N2H4

2018 ◽  
Vol 282 ◽  
pp. 232-237
Author(s):  
Adam Hinckley ◽  
Anthony Muscat
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Detection Limits ◽  
Atomic Layer ◽  
Volatile Species ◽  
X Ray ◽  
Layer Deposition

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

scholarly journals X-ray Photoelectron Spectroscopy(XPS) Study of Fracture Mechanism in Sintered Si3N4.

2000 ◽  
Vol 108 (1253) ◽  
pp. 61-64 ◽  
Author(s):  
Masahiro OZAWA ◽  
Yoichiro FURUKAWA ◽  
Mitsushige OGAWA ◽  
Kei ISOZAKI
Keyword(s):  
Photoelectron Spectroscopy ◽  
Fracture Mechanism ◽  
X Ray ◽  
Xps Study

The Platinum/Titanium Nitride Interface: X-ray Photoelectron Spectroscopy Studies

2019 ◽  
Vol 41 (1) ◽  
pp. 865-874
Author(s):  
Nikola Matic ◽  
Gary Chottiner ◽  
Frank Ernst ◽  
Daniel Scherson
Keyword(s):  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Spectroscopy Studies

XPS STUDY OF DOPING MECHANISM IN HEAVILY DOPED PbWO4:M3+(M = La, Nd, Gd) CRYSTALS

2007 ◽  
Vol 14 (04) ◽  
pp. 725-728
Author(s):  
XIQI FENG ◽  
WEIFENG LI ◽  
WENLIANG ZHU
Keyword(s):  
Photoelectron Spectroscopy ◽  
Rare Earth Ions ◽  
High Concentration ◽  
Lead Tungstate ◽  
X Ray ◽  
Optoelectronic Application ◽  
Trivalent Rare Earth ◽  
Heavily Doped ◽  
Doping Mechanism ◽  
Xps Study

Lead tungstate ( PbWO 4) (PWO) crystals doped with high concentration trivalent rare earth ions have demonstrated to be a promising Cherenkov radiator material and also a potential material for optoelectronic application. In this paper, the doping mechanisms of the trivalent ions ( La 3+, Nd 3+, and Gd 3+) in the PWO host were studied using X-ray photoelectron spectroscopy (XPS), and the results were consistent with those of computer simulation. It was found that when heavily doped, La 3+ may substitute for the W sites as well as the Pb sites for self-compensation by forming La dimers or small aggregates. However, the doping mechanism of heavily doped PWO: Nd 3+ and PWO: Gd 3+ might be different from that of heavily doped PWO: La 3+ crystals.

Simplified Synthesis and Luminous Mechanism of Eu2+-Doped α-Si3N4 Nanowires with Strong Green Luminescent Properties

2017 ◽  
Vol 727 ◽  
pp. 635-641 ◽  
Author(s):  
Rui Su ◽  
Zhi Feng Huang ◽  
Fei Chen ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Broad Band ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Broad Band Emission ◽  
Band Emission ◽  
Nitridation Process ◽  
Transmission Electron

Ultra-long, single crystal, Eu-doped α-Si3N4 nanowires were prepared by a simple approach involving nitriding Eu-doped cryomilled nanocrystalline Si powder in NH3 flow at 1350 °C for 4 h. Phases, chemical composition and microcosmic feature of cryomilled powders and as-prepared nanowires were tested by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), respectively. The results suggested that Eu was successfully introduced into Si lattice after the cryomilling process and then entered into the lattice of α-Si3N4 during the nitridation process. The as-synthesized Eu-doped α-Si3N4 nanowires had highly uniform dimension with 20~30 nm in diameter and ~100 μm in length. The room temperature photoluminescence (PL) spectrum of as-synthesized nanowires showed a broad band emission center at 570 nm which was attributed to the transition from 4f65d to 4f7 in Eu2+. The transition from Eu3+ to Eu2+ during nitridation process was tested by X-ray photoelectron spectroscopy (XPS).

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