Vertical-Cavity Optoelectronic Structures: CAD, Growth, and Structural Characterization

1992 ◽  
Vol 281 ◽  
Author(s):  
D. H. Christensen ◽  
S. M. Crochiere ◽  
J. G. Pellegrino ◽  
R. S. Rai ◽  
C. A. Parsons ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Computer Aided Design ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Random Alloys ◽  
Aided Design ◽  
Vertical Cavity

ABSTRACTSimulations of reflectance spectra and electric field distributions for vertical-cavity structures were used in the computer aided design of epitaxial mirrors and lasers. The binary GaAs/AlAs superlattice alloys and AlxGa1−xAs random alloys that compose these structures were grown by molecular beam epitaxy. Photoluminescence, photoreflectance, reflectance spectroscopy, scanning electron microscopy, transmission electron microscopy, and double crystal x-ray diffractometry were applied to characterize cavity and Bragg mirror layer thicknesses and alloy composition.

A Study on the Strain and Microstructure in SiGe Film Grown on Si(001) Substrate by MBE

1994 ◽  
Vol 356 ◽  
Author(s):  
Kyoung-Ik Cho ◽  
Sahn Nahm ◽  
Sang-Gi Kim ◽  
Seung-Chang Lee ◽  
Kyung-Soo Kim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Large Strain ◽  
Strain Relaxation ◽  
Stacking Faults ◽  
Double Crystal ◽  
Crystalline Layer ◽  
X Ray ◽  
Transmission Electron ◽  
Plain Strain

AbstractSi/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 ∼ 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 ∼ 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about − 8×l0−3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of − 4×l0−3 and large strain relaxation of 50%.

Tem Study of Temperature Influence on The Crystalline Quality of InGaAs/Si Epilayers

1992 ◽  
Vol 263 ◽  
Author(s):  
A. Vila ◽  
A. Cornet ◽  
J.R. Morante ◽  
D.I. Westwood
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Temperature Influence ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Different Temperatures

ABSTRACTA Transmission Electron Microscopy (TEM) study of In0.53Ga0.47As Molecular Beam Epitaxy films grown at different temperatures onto misoriented Si (100) substrates is presented. The evolution of the density of the different kind of defects is discussed as a function of the growth temperature in the range between 200 and 500° C. The results are compared with the characterization techniques of Double Crystal X-Ray Diffraction and Hall effect.

Double Periodicity Formation in EuTe/PbTe Superlattices

1995 ◽  
Vol 399 ◽  
Author(s):  
M. Shima ◽  
L. Salamanca-Riba ◽  
G. Springholz ◽  
G. Bauer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTMolecular beam epitaxy was used to grow EuTe(x)/PbTe(y) short period superlattices with x=1-4 EuTe(111) monolayers alternating with y≈3x PbTe monolayers. The superlattices were characterized by transmission electron microscopy and high resolution x-ray diffraction. Regions with double periodicity were observed coexisting with areas of nominal periodicity. The sample with x=3.5 and y=9, for example, contains regions with double periodicity of x=7 and y=17. X-ray diffraction measurements confirm the formation of the double periodicity in these samples by the appearance of weak satellites in between the satellites of the nominal periodicity. The double periodicity in the superlattice is believed to result from interdiffusion during the growth. A model for this process is presented.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Initial formation mechanisms of (Ga1−xMnx)N nanorods grown on Al2O3 (0001) substrates

2008 ◽  
Vol 23 (12) ◽  
pp. 3275-3280 ◽  
Author(s):  
K.H. Lee ◽  
J.Y. Lee ◽  
H.C. Jeon ◽  
T.W. Kang ◽  
H.Y. Kwon ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Formation Mechanisms ◽  
X Ray Diffraction ◽  
Initial Formation ◽  
X Ray ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Xrd Patterns ◽  
Scanning Electron

The (Ga1−xMnx)N nanorods were grown on Al2O3 (0001) substrates by using rf-associated molecular beam epitaxy. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area diffraction pattern (SADP) results showed that the (Ga1−xMnx)N nanorods had (0001) preferential orientations. XRD patterns showed that the (Ga1−xMnx)N nanorods contained a small number of grains with different preferred orientations. High-resolution TEM (HRTEM) images showed that the (Ga1−xMnx)N nanorods consisted of different preferentially oriented grains. The initial formation mechanisms for the (Ga1−xMnx)N nanorods grown on Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates

2002 ◽  
Vol 744 ◽  
Author(s):  
Ganesan Suryanarayanan ◽  
Anish A. Khandekar ◽  
Brian E. Hawkins ◽  
Thomas F. Kuech ◽  
Susan E. Babcock
Keyword(s):  
Electron Microscopy ◽  
Extended Defects ◽  
Double Crystal ◽  
Cross Sectional ◽  
Lateral Epitaxial Overgrowth ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Inas Thin Films

ABSTRACTThe microstructure of epitaxial InAs thin films grown by MOCVD on mask-patterned “LEO” (lateral epitaxial overgrowth) GaAs and on unpatterned GaAs substrates was studied using double-crystal x-ray diffraction, scanning electron microscopy and cross-sectional transmission electron microscopy. This paper describes the improvement in crystal quality (factor of 20 reduction in x-ray rocking curve width), the order of magnitude reduction in dislocation density, and the rearrangement of the remaining extended defects that were observed in the LEO material when compared to the film grown on the unpatterned wafer.

scholarly journals Domain growth of Dy2O3 buffer layers on SrTiO3

1993 ◽  
Vol 8 (6) ◽  
pp. 1373-1378 ◽  
Author(s):  
A. Catana ◽  
J-P. Locquet
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Crystallographic Analysis ◽  
Buffer Layers ◽  
Domain Growth ◽  
Structural Perfection ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns

Dy2O3 layers have been grown on SrTiO3 by molecular beam epitaxy. X-ray and electron diffraction patterns clearly show that Dy2O3 grows epitaxially on SrTiO3 with {100} planes parallel to the substrate surface. Transmission electron microscopy reveals that the Dy2O3 film breaks up into small domains (10–40 nm). This leads to the formation of terraces which limits the structural perfection of thin overgrown DyBa2Cu3O7 by introducing steps and small misorientations (within 3°). The resulting surface corrugation does not preclude the growth of epitaxial c-axis DyBa2Cu3O7 films with a Tc0 of 86 K. Crystallographic analysis and image calculations show that the domain growth of Dy2O3 is associated with the formation of 90° rotation twins.

scholarly journals Структурная характеризация короткопериодной сверхрешетки на основе гетероструктуры CdF-=SUB=-2-=/SUB=-/CaF-=SUB=-2-=/SUB=-/Si(111) методами просвечивающей электронной микроскопии и рентгеновской дифрактометрии

2021 ◽  
Vol 47 (15) ◽  
pp. 3
Author(s):  
Л.М. Сорокин ◽  
Р.Н. Кютт ◽  
В.В. Ратников ◽  
А.Е. Калмыков
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Fragment Size ◽  
Diffraction Curve ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Lateral Inhomogeneity

A detailed study of the structure of a short-period superlattice based on alternating layers of cadmium and calcium fluorides, grown by molecular beam epitaxy on a Si (111) substrate, by transmission electron microscopy and X-ray diffractometry, has been carried out. It was found that the superlattice is in a pseudomorphic state, and a lateral inhomogeneity with a fragment size of 10 - 40 nm was found. The reason for the broadening of the main and satellite peaks of the SL on the (111) diffraction curve has been clarified.

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