Low-Temperature Deposition of ZrC thin films from a Single-Source Precursor

1992 ◽  
Vol 282 ◽  
Author(s):  
David C. Smith ◽  
Rodrigo R. Rubiano ◽  
Matthew D. Healy ◽  
Robert W. Springer
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Zirconium Carbide ◽  
Elastic Recoil ◽  
X Ray Diffraction ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Organometallic Precursor ◽  
Single Source Precursor

ABSTRACTStable zirconium carbide thin films have been deposited from a singlesource organometallic precursor, tetraneopentyl zirconium, at substrate temperatures above 500 °C. Materials deposited above this temperature are crystalline by X-ray diffraction. A metal to carbon ratioof 1:2 is observed by Auger electron spectroscopy depth profiling. X-ray photoelectron spectroscopy indicates the zirconium is single phase. The observed spectra correspond well to spectra for zirconium carbide standards. Carbon XPS reveals carbidic and graphitic or hydrocarbon species with a third unknown carbon species. Elastic recoil detection finds a large, up to 16%, hydrogen content in the thin film.

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

scholarly journals Synthesis and characterization of Cr–B–N coatings deposited by reactive arc evaporation

2008 ◽  
Vol 23 (11) ◽  
pp. 3048-3055 ◽  
Author(s):  
K. Polychronopoulou ◽  
J. Neidhardt ◽  
C. Rebholz ◽  
M.A. Baker ◽  
M. O’Sullivan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Partial Pressure ◽  
Photoelectron Spectroscopy ◽  
Columnar Structure ◽  
Elastic Recoil ◽  
Cross Sectional ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Selected Area Electron Diffraction ◽  
Arc Evaporation

Nanocomposite Cr–B–N coatings were deposited from CrB0.2 compound targets by reactive arc evaporation using an Ar/N2 discharge at 500 °C and −20 V substrate bias. Elastic recoil detection (ERDA), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) were used to study the effect of the N2 partial pressure on composition and microstructure of the coatings. Cross-sectional scanning electron microscopy (SEM) showed that the coating morphology changes from a glassy to a columnar structure with increasing N2 partial pressure, which coincides with the transition from an amorphous to a crystalline growth mode. The saturation of N content in the coating confirms the formation of a thermodynamically stable CrN–BN dual-phase structure at higher N2 fractions, exhibiting a maximum in hardness of approximately 29 GPa.

Study by X-ray photoelectron spectroscopy and X-ray diffraction of the growth of TiN thin films obtained by nitridation of Ti layers

1996 ◽  
Vol 290-291 ◽  
pp. 376-380 ◽  
Author(s):  
S. Santucci ◽  
L. Lozzi ◽  
M. Passacantando ◽  
P. Picozzi ◽  
R. Alfonsetti ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tin Thin Films

Defect-Related Photoluminescence from SiO2 Thin Films by Si-Ge Ions Doped

2011 ◽  
Vol 328-330 ◽  
pp. 1153-1156 ◽  
Author(s):  
Kun Zhong ◽  
Yan Dong Xia ◽  
Ju Hong Miao ◽  
Jiang Fu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
X Ray

Si and Ge ions are implanted into SiO2thin films, subsequently the annealing treatment are carried out. The samples exhibit photoluminescence (PL) peaks at 400, 470, 550 and 780 nm. With the annealing temperature increasing, the intensity of 400-470 nm PL band increases remarkably. After oxidation annealing treatment, the intensity of 400-470 nm PL band decreases, and that of 550 nm and 780 nm PL peaks rises. Combing with the results of X-ray photoelectron spectroscopy(XPS), X-ray diffraction (XRD) and PL measurement, we propose that the PL peaks at 400 nm, 470 nm, 550 nm and 780 nm originate from ≡Ge−Si≡ center, ≡Si−Si≡ center, SPR center and GeO center, respectively.

X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling

2010 ◽  
Vol 28 (2) ◽  
pp. L1-L4 ◽  
Author(s):  
T. Miyayama ◽  
N. Sanada ◽  
M. Suzuki ◽  
J. S. Hammond ◽  
S.-Q. D. Si ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Spectroscopy Study ◽  
X Ray ◽  
Cluster Ion
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