Photoreflectance Characterisation of Reactive Ion Etched Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
M. Murtagh ◽  
J. T. Beechinor ◽  
P. A. F. Herbert ◽  
P.V. Kelly ◽  
G. M. Crean ◽  
...  
Keyword(s):  
Etch Rate ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Applied Bias ◽  
Plasma Surface ◽  
Rate Analysis ◽  
Etched Silicon ◽  
P Type ◽  
Etch Bias

AbstractReactive ion etching (RIE) of p-type 2-3 †cm resistivity silicon (100) was characterised using Photoreflectance (PR), Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Isochronal (5 minutes) etching was performed at various DC etch biases (0-500V) using a SiCl4 etch chemistry. The substrate etch rate dependence on applied bias was determined using mechanical profilometry. A distinct shift in the A3–A1 Si transition and significant spectral broadening of the room temperature PR spectra was observed as a function of etch bias. Photoreflectance results are correlated with RBS, SE and etch rate analysis. It is demonstrated that the PR spectra reflect a complex, competitive, plasma-surface interaction during the RIE process.

Room Temperature Fabrication of Micro-Crystalline Silicon Films for Tft's By Ecr Pecvd

1993 ◽  
Vol 334 ◽  
Author(s):  
Yoo-Chan Jeon ◽  
Seok-Woon Lee ◽  
Seung-Ki Joo
Keyword(s):  
Silicon Nitride ◽  
Crystalline Phase ◽  
Etch Rate ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Hydrogen Dilution ◽  
Crystalline Films ◽  
Etched Silicon

AbstractMicrocrystalline silicon films were formed at room temperature without hydrogen dilution by ECR PECVD. Microwave power more than 400 W was necessary to get crystalline films and the crystallinity increased with the power thereafter. Addition of hydrogen and argon enhanced the crystalline phase formation and the deposition rate, the reason of which was found that hydrogen etched silicon films and argon addition drastically increased the etch rate. Annealing of the films showed that microcrystalline silicon films formed by ECR PECVD have a small fraction of amorphous phase. TFT's using silicon nitride and doped/undoped microcrystalline silicon films were fabricatedd with whole processes at room temperature.

1158-P: Type 2 Diabetes Patients Subtype Analysis: Unbiased Machine Learning for Future Personalized T2D Care

Diabetes ◽  
2019 ◽  
Vol 68 (Supplement 1) ◽  
pp. 1158-P
Author(s):  
LI CHEN ◽  
LINGGE FENG ◽  
CUI TANG ◽  
YI ZHANG
Keyword(s):  
Machine Learning ◽  
Type 2 Diabetes ◽  
P Type ◽  
Diabetes Patients

1758-P: Type 2 Diabetes–Associated Mood Disorders: Role of Insulin Resistance in Serotonergic Neurons

Diabetes ◽  
2020 ◽  
Vol 69 (Supplement 1) ◽  
pp. 1758-P
Author(s):  
HUGO MARTIN ◽  
SÉBASTIEN BULLICH ◽  
FABIEN DUCROCQ ◽  
MARION GRALAND ◽  
CLARA OLIVRY ◽  
...  
Keyword(s):  
Insulin Resistance ◽  
Type 2 Diabetes ◽  
Mood Disorders ◽  
Serotonergic Neurons ◽  
P Type

1249-P: Type 2 Diabetes in Prepubertal Children under 10 Years Old

Diabetes ◽  
2020 ◽  
Vol 69 (Supplement 1) ◽  
pp. 1249-P
Author(s):  
MARCELA ASTUDILLO ◽  
AHMAD K. REFAEY ◽  
MUSTAFA TOSUR ◽  
ALEJANDRO F. SILLER ◽  
SIRIPOOM MCKAY ◽  
...  
Keyword(s):  
Type 2 Diabetes ◽  
Prepubertal Children ◽  
P Type

1460-P: Type 2 Diabetes Polygenic Score in Addition to Clinical Factors for Prediction of Diabetes Incidence in an Indigenous American Population

Diabetes ◽  
2020 ◽  
Vol 69 (Supplement 1) ◽  
pp. 1460-P
Author(s):  
LAUREN E. WEDEKIND ◽  
SAYUKO KOBES ◽  
WEN-CHI HSUEH ◽  
LESLIE BAIER ◽  
WILLIAM C. KNOWLER ◽  
...  
Keyword(s):  
Type 2 Diabetes ◽  
Diabetes Incidence ◽  
American Population ◽  
Clinical Factors ◽  
Polygenic Score ◽  
Prediction Of Diabetes ◽  
P Type

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Research on Effect of Alloy Elements on Equilibrium and Properties of Ni-Cr-Co Type Nickel-Based Superalloy

2016 ◽  
Vol 849 ◽  
pp. 513-519
Author(s):  
Qing Quan Zhang ◽  
Ming Yang Li ◽  
Ran Wei ◽  
Hui Yun Wu ◽  
Zhen Rui Li
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
High Temperature Strength ◽  
Nickel Based Superalloy ◽  
Type 3 ◽  
Room Temperature Strength ◽  
Super Alloy ◽  
Type Nickel

Ni-Cr-Co type Nickel-based super alloy Inconel 740H was studied. The effect of Nb, Al and Ti on the equilibrium of this alloy was analyzed by JMatPro software. The amount of Ti and Nb should be controlled by 1.50wt.%, and meanwhile, Al should be 1.0-2.0wt.%. If Mo and W were added the amount of Mo should be in the range of 1.0-2.0wt. %, and W should be about 1.0wt.%. Based on these results, three types of new alloys were designed, which contain Ni-Cr-Co-Mo type (1#), Ni-Cr-Co-W type (2#) and Ni-Cr-Co-Mo-W type (3#). Compared with the Ni-Cr-Co type Inconel 740H alloy, the room temperature strength, high temperature strength and high temperature durable performance of the three new alloys improved, which can provide the evidence and reference to optimize the chemical composition of Inconel 740H alloy, i.e., adding 1.50wt.% Mo and 1.0wt.% W individually or together.

Intrinsic n- and p-Type MgZnO Nanorods for Deep-UV Detection and Room-Temperature Gas Sensing

2015 ◽  
Vol 119 (52) ◽  
pp. 29186-29192 ◽  
Author(s):  
Ruey-Chi Wang ◽  
Yu-Xian Lin ◽  
Jia-Jun Wu
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Uv Detection ◽  
Deep Uv ◽  
P Type

Room Temperature Band-Edge Luminescence from Silicon Grains Prepared by the Recrystallization of Mesoporous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
Karen L. Moore ◽  
Leonid Tsybeskov ◽  
Philippe M. Fauchet ◽  
Dennis G. Hall
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Band Edge ◽  
Applied Bias ◽  
Mesoporous Silicon ◽  
Room Temperature Photoluminescence ◽  
Band Edge Luminescence ◽  
A Current ◽  
Better Than

AbstractRoom-temperature photoluminescence (PL) peaking at 1.1 eV has been found in electrochemically etched mesoporous silicon annealed at 950°C. Low-temperature PL spectra clearly show a fine structure related to phonon-assisted transitions in pure crystalline silicon (c-Si) and the absence of defect-related (e.g.P-line) and impurity-related (e.g.oxygen, boron) transitions. The maximum PL external quantum efficiency (EQE) is found to be better than 0.1% with a weak temperature dependence in the region from 12K to 400K. The PL intensity is a linear function of excitation intensity up to 100 W/cm2. The PL can be suppressed by an external electric field ≥ 105 V/cm. Room temperature electroluminescence (EL) related to the c-Si band-edge is also demonstrated under an applied bias ≤ 1.2 V and with a current density ≈ 20 mA/cm2. A model is proposed in which the radiative recombination originates from recrystallized Si grains within a non-stoichiometric Si-rich silicon oxide (SRSO) matrix.

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