Solid-Phase Epitaxial Regrowth and Dopant Activation of Arsenic. Implanted Metastable Pseudomorphic Ge0.08Si0.92 AND GeO.16SiO.84 ON Si(100)

1995 ◽  
Vol 379 ◽  
Author(s):  
D.Y.C. Lie ◽  
J.H. Song ◽  
M.-A. Nicolet ◽  
N.D. Theodore ◽  
J. Candelaria ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Solid Phase Epitaxy ◽  
Epitaxial Regrowth ◽  
Control Samples

ABSTRACTMetastable pseudomorphic GexSi1−x (x=8%,16%) films were deposited on p-Si(100) substrates by chemical-vapor-deposition and then implanted at room temperature with 90 keV arsenic ions to a dose of 1.5×1015/cm2. The implantation amorphizes approximately the top 125 nm of the 145 nm-thick GeSi layers. The Si-GeSi interfaces remain sharp after implantation. Implanted and non-implanted GeSi samples, together with implanted Si control samples, were subsequently annealed simultaneously by rapid thermal annealing in a nitrogen ambient at 600,700,800 × for 10,20,40s at each temperature. The implanted samples undergo layer-by-layer solid-phase epitaxial regrowth during annealing at or above 600 ×C. The amorphized and regrown GeSi layers are always fully relaxed with a very high density of dislocations (1010-1011/cm2). At a fixed annealing temperature, strain relaxation of an implanted GeSi film is substantially more extensive than that of a non-implanted one. About 50-90% of the implanted arsenic ions become electrically active after the completion of solid-phase epitaxy. The percentages of arsenic ions that are activated in the Si control samples are generally higher than those in GeSi. The room-temperature sheet electron mobility in GeSi is roughly 30% lower than that in Si for a given sheet electron concentration. We conclude that metastable GeSi on Si(100) amorphized by arsenic ions and recrystallized by solid-phase epitaxy cannot recover both its crystallinity and its pseudomorphic strain under rapid thermal annealing.

Effects of Rapid Thermal Annealing on W/Si1−xGex Contacts

1993 ◽  
Vol 320 ◽  
Author(s):  
V. Aubry ◽  
F. Meyer ◽  
R. Laval ◽  
C. Clerc ◽  
P. Warren ◽  
...  
Keyword(s):  
Barrier Height ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Thermal Reaction ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
Parasitic Effect ◽  
Strained Films

ABSTRACTThermal reaction of W with Si1−xGex films epitaxially grown by Rapid Thermal Chemical Vapor Deposition was investigated in the temperature range 500°C - 1000°C. The samples were annealed either in a Rapid Thermal Annealing (RTA) system or in a conventional furnace, both in flowing nitrogen. The reaction products were investigated by Rutherford Backscattering Spectroscopy (RBS), Energy Dispersive Spectrometry (EDS) and X-ray diffraction (XRD). Sheet resistance measurements were also performed to follow the progress of the reaction. The reaction of W with Si0.67Ge0.33 is similar to that of W with silicon. W reacts with silicon to form tetragonal WSi2. The Ge-content in the silicide is lower than that of the asdeposited alloy. It is shown that an oxygen contamination occurs during conventional annealing and leads to the formation of non homogeneous Si1−x Gex unreacted alloy below the silicide film. Rapid thermal annealing prevents this parasitic effect and the unreacted film remains homogeneous although a slight decrease in the Ge-content is observed. These results are correlated with Schottky barrier height measurements on p-Si0.83Ge0.17 partially strained films. We observed an increase of the barrier height with increasing the temperature for annealing from 500°C to 1000°C. This trend may be explained either by strain relaxation or (and) Ge-content decrease in the unreacted alloy.

Influence of the Temperature of Implantation on the Morphology of Defects in MeV Implanted GaAs.

1989 ◽  
Vol 147 ◽  
Author(s):  
G. Braunstein ◽  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Rajeswaran.
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Room Temperature ◽  
Surface Region ◽  
Amorphous Region ◽  
Liquid Nitrogen Temperature ◽  
Dislocation Loops ◽  
Near Surface ◽  
Epitaxial Regrowth

AbstractWe have studied the influence of the temperature of implantation on the morphology of the defects created during 1-MeV implantation of Si into GaAs, using RBS-channeling and TEM. The annealing behavior of the disorder has also been investigated.Implantation at liquid-nitrogen temperature results in the amorphization of the implanted sample for doses of 2×1014 cm−2 and larger. Subsequent rapid thermal annealing at 900°C for 10 seconds leads to partial epitaxial regrowth of the amorphous layer. Depending on the implantation dose, the regrowth can proceed from both the front and back ends of the amorphous region or only from the deep end of the implanted zone. Nucleation and growth of a polycrystalline phase occurs concurrently, limiting the extent of the epitaxial regrowth. After implantation at room temperature and above, two distinct types of residual defects are observed or inferred: point defect complexes and dislocation loops. Most of the point defects disappear after rapid thermal annealing at temperatures ≥ 700°C. The effect of annealing on the dislocation loops depends on the distance from the surface of the sample. Those in the near surface region disappear upon rapid thermal annealing at 700°C, whereas the loops located deeper in the sample grow in size and begin to anneal out only at temperatures in excess of 900°C. Implantation at temperatures of 200 - 300°C results in a large reduction in the number of residual point defects. Subsequent annealing at 900°C leads to a nearly defect-free surface region and, underneath that, a buried band of partial dislocation loops similar to those observed in the samples implanted at room temperature and subsequently annealed.

In Situ Tem Studies of The Growth of Strained Si1-xGex By Solid Phase Epitaxy

1990 ◽  
Vol 202 ◽  
Author(s):  
D. C. Paine ◽  
D. J. Howard ◽  
N. D. Evans ◽  
D. W. Greve ◽  
M. Racanelli ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Surface Region ◽  
In Situ Tem ◽  
Solid Phase Epitaxy ◽  
Near Surface ◽  
Strained Layer ◽  
Epitaxial Regrowth

ABSTRACTIn this paper we report on the epitaxial growth of strained thin film Si1-xGex on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si1-xGex with xGe=11.6 at. % was epitaxially grown on <001> Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si1-xGex film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, 29Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy for Si1-xGex (x=l 1.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600°C.

Secondary Grain Growth During Rapid Thermal Annealing of Doped Polysilicon Films

1987 ◽  
Vol 92 ◽  
Author(s):  
R. C. Cammarata ◽  
C. V. Thompson ◽  
S. M. Garrison
Keyword(s):  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Substrates ◽  
Solid Phase Epitaxy ◽  
Polysilicon Films ◽  
Heavily Doped ◽  
Grain Growth Behavior ◽  
Short Times

ABSTRACTRecently there has been a great deal of interest in the use of thin (≤0.1µm) heavily doped polysilicon films as diffusion sources for shallow junctions in silicon substrates. It has been reported that grain growth and solid phase epitaxy occur during annealing of such films and that the apparent rates of both are much greater during rapid thermal annealing. We report similar grain growth behavior for rapid thermal annealed thin polysilicon films deposited onto amorphous SiO2. Based on these experimental results we propose that solid phase homoepitaxy in polysilicon films occurs via secondary grain growth. This process proceeds rapidly at first but slows down due to grain boundary drag. Rapid thermal annealing of polysilicon films provides a method for selectively utilizing the kinetic process that dominates for short times.

Solid-Phase Epitaxial Regrowth of Ion-Implanted Silicon on Sapphire Using Rapid Thermal Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
A M Hodge ◽  
A G Cullis ◽  
N G Chew
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Full Potential ◽  
Cross Sectional ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Device Processing

ABSTRACTSolid phase epitaxial regrowth of silicon on sapphire is used to improve the quality of as-received silicon films prior to conventional device processing. It has been shown that this is necessary, especially for layers of 0.3μm and thinner, if the full potential of this particular silicon on insulator technology is to be realised. Si+ ions are implanted at an energy and dose such that all but the surface of the silicon film is rendered amorphous. In this study, the layer is regrown using a rapid thermal annealer operated in the multi-second regime. A second shallower implant followed by rapid thermal annealing produces a further improvement. Characterisation of the material has been principally by cross-sectional transmission electron microscopy. The structures observed after different implant and regrowth treatments are discussed.

Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge0.12Si0.88

1994 ◽  
Vol 342 ◽  
Author(s):  
D. Y. C. Lie ◽  
J. H. Song ◽  
N. D. Theodore ◽  
F. Eisen ◽  
M.-A. Nicolet ◽  
...  
Keyword(s):  
Steady State ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
X Ray ◽  
Projected Range

ABSTRACTPseudomorphic Ge0.12Si0.88 films 265 nm thick grown by molecular beam epitaxy on p- Si(100) substrates were implanted with 100 keV 31P at room temperature for a dose of 5 x 1013/cm2. The projected range of the implanted P is about half the epilayer thickness. The implanted layers, together with non-implanted virgin samples, were subsequently annealed by both rapid thermal annealing in nitrogen and by steady-state furnace annealing in vacuum. The damage and strain of the annealed layers were studied by 4He channeling and x-ray doublecrystal diffraction. For a dose of 5 x 1013 P /cm2, both the damage and strain introduced by implantation can be completely removed, within instrumental sensitivity, by rapid thermal annealing at 700 °C for 10 - 40 s. Furnace annealing at 550 °C for 30 min for this sample removes most of the damage and strain induced by implantation. Furnace annealing at 700 °C or higher worsens the crystallinity of the layer and the strain relaxes. Hall measurements were performed on the same samples. Furnace annealing cannot achieve good dopant activation without introducing significant strain relaxation to the heterostructure, while rapid thermal annealing can.

On the Role of Interfacial Defect Sites During Solid Phase Epitaxial Regrowth of Implantation Amorphized Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
W. O. Adekoya ◽  
M. Hage-Ali ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Rutherford Backscattering ◽  
Temperature Range ◽  
Interfacial Defect ◽  
A Value ◽  
Epitaxial Regrowth ◽  
Defect Sites

ABSTRACTWe have studied the solid phase epitaxial regrowth (SPER) of implantation (31P+11B+ (73Ge+ preamorphized)) amorphized silicon in the temperature range 500–600°C induced by Rapid Thermal Annealing (RTA) using Rutherford Backscattering and channeling measurements (RBS). Our results show rate enhancements (≃ 3.5–6.5) of the velocities of regrowth in all studied cases with respect to literature-reported values for furnace-induced SPER. Also, the ratio VB/VP (velocity of regrowth in the presence of boron with respect to phosphorus) gives a value of approximately 3 in both RTA and furnace-induced kinetics. These results are explained by a model which takes into account the role of electrically-active interfacial defect sites during SPER.

Solid Phase Epitaxy Process Of Ar-Ion Bombarded Silicon Surfaces and Recovery of Crystallinity by Thermal Annealing Observed With Scanning Tunneling Microscopy

1993 ◽  
Vol 321 ◽  
Author(s):  
Katsuhiro Uesugi ◽  
Masamichi Yoshimura ◽  
Takafumi Yao
Keyword(s):  
Thermal Annealing ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Silicon Surfaces ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
Solid Phase Epitaxy ◽  
Tunneling Microscopy ◽  
Reconstructed Surface

ABSTRACTThe solid-phase epitaxy (SPE) process of Ar+-ion bombarded Si (001) surfaces and recovery of crystallinity by thermal annealing are studied “in situ” by using a scanning tunneling Microscope (STM). As-bombarded surfaces consist of grains of 0.63–1.6 nm in diameter. The grains gradually coalesce and form clusters of 2–3.6 nm in diameter at annealing temperature of 245° C (2×1) and (1×2) reconstructed regions surrounded by amorphous regions are partially observed on the surface by prolonged annealing, which suggests the onset of SPE. Successive observation reveals that the smoothing of the surface occurs layer by layer. As annealing temperature is raised up to 445 °C, the amorphous layer epitaxially crystallizes up to the topmost surface, and (2×1) reconstructed surface with Monatomic-height steps is observed. The smoothing of the surface structures and the formation of nucleation of Si islands are observed during annealing at 500 °C.

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