RTA-Preparation of β-FeSi2 Layers from MBE-Grown Fe-Si Films Deposited on Si and Relaxed SiGe (100) Substrates

1995 ◽  
Vol 387 ◽  
Author(s):  
M. LíBezný ◽  
J. Poortmans ◽  
J. Dekoster ◽  
S. Degroote ◽  
A. Vantomme ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Structural Defects ◽  
Surfaces And Interfaces ◽  
Transmission Electron ◽  
Current Voltage ◽  
Si Films ◽  
P Type

AbstractRapid thermal annealing (RTA) of Fe-Si layers co-deposited on n- and p- type Si (100) and Si-capped relaxed Si0.6Ge0.4 (100) substrates was studied. Relaxed (100) Si0.6Ge0.4 epitaxial layers represent a pseudo-matched substrate for the β-FeSi2 phase. Fe-Si layers with a 1:2 composition ratio were deposited at room temperature in an MBE system. Samples were then subjected to a rapid thermal annealing in a H2/N2-atmosphere in the temperature range between 500 and 800 °C. Conversion electron Mössbauer spectroscopy showed that the layers consist of the β-FeSi2 phase. Nomarski microscopy revealed crystal grains of the diameter from 5 to 10 μm. Cross-section transmission electron microscopy study found smooth surfaces and interfaces. No significant structural defects were found inside the grains. Differences between current-voltage characteristics of simple devices prepared on these layers agree with the trends expected from their band diagrams.

Structural Defects and Critical Electric Field in 3C-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 431-434 ◽  
Author(s):  
Michael A. Capano ◽  
A.R. Smith ◽  
Byeung C. Kim ◽  
E.P. Kvam ◽  
S. Tsoi ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electric Field ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Chemical Vapor ◽  
Structural Defects ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
P Type

3C-SiC p-type epilayers were grown to thicknesses of 1.5, 3, 6 and 10 μm on 2.5° off-axis Si(001) substrates by chemical vapor deposition (CVD). Silane and propane were used as precursors. Structural analysis of epilayers was performed using transmission electron microscopy (TEM), high-resolution x-ray diffractometry (HRXRD), and Raman spectroscopy. TEM showed defect densities (stacking faults, twins and dislocations) decreasing with increasing distance from the SiC/Si interface as the lattice mismatch stress is relaxed. This observation was corroborated by a monotonic decrease in HRXRD peak width (FWHM) from 780 arcsecs (1.5 μm thick epilayer) to 350 arcsecs (10 μm thick epilayer). Significant further reduction in x-ray FWHM is possible because the minimum FWHM detected is greater than the theoretical FWHM for SiC (about 12 arcsecs). Raman spectroscopy also indicates that the residual biaxial in-plane strain decreases with increasing epilayer thickness initially, but becomes essentially constant between 6 and 10 μm. Structural defect density shows the most significant reduction in the first 2 μm of growth. Phosphorus implantation was used to generate n+/p junctions for the measurement of the critical electric field in 3C-SiC. Based on current-voltage analyses, the critical electric field in p-type 3C-SiC with a doping of 2x1017 cm-3 is 1.3x106 V/cm.

Recrystallization of Implanted LPCVD Amorphous Si Films Using Rapid Thermal Annealing

1986 ◽  
Vol 74 ◽  
Author(s):  
R. Kwor ◽  
S. M. Tang ◽  
N. S. Alvi
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dwell Time ◽  
Hall Effect Measurement ◽  
Temperature Coefficient Of Resistance ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films

AbstractThe effect of rapid thermal annealing on the crystallization of arsenic and boron implanted amorphous silicon films is studied. Amorphous Si films of 4000 Å were deposited using LPCVD and implanted with arsenic or boron to doses of 5 × 1013, 5 × 1014, and 5 × 1015 cm−2. These films were then annealed using an Eaton Nova-400 RTA system (with temperature ranging from 900 to 1200 °C and dwell time ranging from 1 to 30 sec). The annealed films were studied using transmission electron microscopy, Hall effect measurement and temperature coefficient of resistance measurement. The optimal annealing conditions for the films were found.

Influence of Rapid Thermal Annealing on Shallow BF2 Implantation into Pre-Amorphized Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
W. Maszara ◽  
C. Carter ◽  
D. K. Sadana ◽  
J. Liu ◽  
V. Ozguz ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Structural Defects ◽  
Structural Quality ◽  
Halogen Lamp ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTLow energy, shallow BF2+ implants were carried out at room or liquid nitrogen temperature into deep pre-amorphized (100) Si for better control of the dopant profile and post-annealing structural defects. Cross sectional and angle polished plan view transmission electron microscopy were used to study the structural quality of the implanted layer, while SIMS provided a chemical profile. Four types of structural defects were observed in BF2+ implanted, pre-amorphized samples following rapid thermal annealing with a halogen lamp. An in-situ ion beam annealing and the presence of F in the Si lattice were related to the creation of the defects. Good correlations between F gettering and TEM observed defects were found to exist. Implantation of B+ into a pre-amorphized Si surface and subsequent rapid thermal annealing was found to produce a wide defect-free surface layer.

scholarly journals Structural complexity and the metal-to-semiconductor transition in lead telluride

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Iryna Zelenina ◽  
Paul Simon ◽  
Igor Veremchuk ◽  
Xinke Wang ◽  
Matej Bobnar ◽  
...  
Keyword(s):  
Lead Telluride ◽  
Structural Complexity ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Structural Defects ◽  
Dislocation Network ◽  
Lead Chalcogenides ◽  
Temperature Dependent ◽  
Transmission Electron ◽  
Increasing Temperature

AbstractLead chalcogenides are known for their thermoelectric properties since the first work of Thomas Seebeck on the discovery of this phenomenon. Yet, the electronic properties of lead telluride are still of interest due to the incomplete understanding of the metal-to-semiconductor transition at temperatures around  230 °C. Here, a temperature-dependent atomic-resolution transmission electron microscopy study performed on a single crystal of lead telluride reveals structural reasons for this electronic transition. Below the transition temperature, the formation of a dislocation network due to shifts of the NaCl-like atomic slabs perpendicular to {100} was observed. The local structure modification leads to the appearance of in-gap electronic states and causes metal-like electronic transport behavior. The dislocation network disappears with increasing temperature, yielding semiconductor-like electrical conductivity, and re-appears after cooling to room temperature restoring the metal-like behavior. The structural defects coupled to the ordering of stereochemically active lone pairs of lead atoms are discussed in the context of dislocations' formation.

Lateral Uniformity of Ultra-Shallow Junctions Formed by Rapid Thermal Annealing in Polysilicon-on-Silicon Systems

1991 ◽  
Vol 224 ◽  
Author(s):  
S. Batra ◽  
K. Park ◽  
S. Banerjee ◽  
T. Smith ◽  
B. Mulvaney
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Front ◽  
Vertical Diffusion ◽  
Transmission Electron ◽  
Shallow Junctions ◽  
Polysilicon Films ◽  
Ultra Shallow Junctions ◽  
Defect Interactions ◽  
Si Films

AbstractLateral non-uniformities can be expected in the dopant diffusion front in the substrate in polysilicon-on-single crystal Si systems upon Rapid Thermal Annealing (RTA), because the grain boundaries in polysilicon act as fast diffusant pipelines and also possibly inject defects into the substrate, which can locally enhance diffusivities in the substrate due to dopant-point defect interactions. The lateral uniformity of As, B and P ultra-shallow junctions formed in the substrate by indiffusion from as-deposited amorphous or polysilicon films has been studied using concentration dependent etching and transmission electron microscopy. Due to a larger final grain size after annealing in the case of as-deposited amorphous Si films compared to asdeposited polysilicon films, there is significant lateral doping inhomogeneities in the diffusion front. However, the doping inhomogeneities are gradually smeared out as the impurities diffuse deeper into the substrate due to lateral as well as vertical diffusion.

Factors influencing adhesive bonding at the bone/implant interface

1992 ◽  
Vol 50 (2) ◽  
pp. 1114-1115
Author(s):  
Julie A. Martini ◽  
Robert H. Doremus
Keyword(s):  
Electron Microscopy ◽  
Adhesive Bonding ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Bone Implant ◽  
Factors Influencing ◽  
Lr White ◽  
Transmission Electron ◽  
New Zealand White Rabbits ◽  
Scanning Electron

Tracy and Doremus have demonstrated chemical bonding between bone and hydroxylapatite with transmission electron microscopy. Now researchers ponder how to improve upon this bond in turn improving the life expectancy and biocompatibility of implantable orthopedic devices.This report focuses on a study of the- chemical influences on the interfacial integrity and strength. Pure hydroxylapatite (HAP), magnesium doped HAP, strontium doped HAP, bioglass and medical grade titanium cylinders were implanted into the tibial cortices of New Zealand white rabbits. After 12 weeks, the implants were retrieved for a scanning electron microscopy study coupled with energy dispersive spectroscopy.Following sacrifice and careful retrieval, the samples were dehydrated through a graduated series starting with 50% ethanol and continuing through 60, 70, 80, 90, 95, and 100% ethanol over a period of two days. The samples were embedded in LR White. Again a graduated series was used with solutions of 50, 75 and 100% LR White diluted in ethanol.

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