Ion-Beam-Induced Epitaxy and Solid Phase Epitaxy of Sigec on Si Formed by Ge and C Ion Implantation and their Structural and Optical Properties

1995 ◽  
Vol 388 ◽  
Author(s):  
N. Kobayashi ◽  
H. Katsumata ◽  
Y. Makita ◽  
M. Hasegawa ◽  
N. Hayashi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Crystallization Process ◽  
Solid Phase ◽  
Ion Beam ◽  
Line Emission ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Strain Compensation

AbstractEpitaxial layers of Si1-x-yGexCy on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400keV Ge and ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS-channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si1-x-yGexCy/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si1-x-yGexCy/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I1 peak with/without I1 related (Ar) peak and that from SPEG-grown samples has shown G line emission. these optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

scholarly journals Structural and optical properties of SnO2–Al2O3 nanocomposite synthesized via sol-gel route

2015 ◽  
Vol 33 (4) ◽  
pp. 714-718 ◽  
Author(s):  
Neeraj K. Mishra ◽  
Chaitnaya Kumar ◽  
Amit Kumar ◽  
Manish Kumar ◽  
Pratibha Chaudhary ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Optical Properties ◽  
Sol Gel ◽  
Physical Interaction ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Scanning Electron

AbstractA nanocomposite of 0.5SnO2–0.5Al2O3 has been synthesized using a sol-gel route. Structural and optical properties of the nanocomposite have been discussed in detail. Powder X-ray diffraction and scanning electron microscopy with energy-dispersive X-ray diffraction spectroscopy confirm the phase purity and the particle size of the 0.5SnO2–0.5Al2O3 nanocomposite (13 to 15 nm). The scanning electron microscopy also confirms the porosity in the sample, useful in sensing applications. The FT-IR analysis confirms the presence of physical interaction between SnO2 and Al2O3 due to the slight shifting and broadening of characteristic bands. The UV-Vis analysis confirms the semiconducting nature because of direct transition of electrons into the 0.5SnO2–0.5Al2O3 nanocomposites.

Structural and Optical Properties of Al Co-Doped ZnCoO Thin Film

2014 ◽  
Vol 989-994 ◽  
pp. 656-659
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Al Doping ◽  
X Ray ◽  
Uv Emission ◽  
Uv Absorption Spectroscopy ◽  
Co Doped

Al co-doped ZnCoO thin film has been prepared by a sol-gel method. The structural and optical properties of the sample were investigated. X-ray diffraction and UV absorption spectroscopy analyses indicate that Al3+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping, the visible emission increased and the UV emission decreased, which is attributed to the increase of O vacancies and Zn interstitials.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

scholarly journals Laser induced plasma of cadmium oxide: structural, morphological and optical properties

2021 ◽  
Vol 2114 (1) ◽  
pp. 012012
Author(s):  
Tamara S. Hussein ◽  
Ala F. Ahmed
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Cadmium Oxide ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Optical Energy Gap ◽  
X Ray ◽  
Laser Induced Plasma ◽  
Atomic Force ◽  
Doping Ratio

Abstract In this study, the effect of grafting with Iron (Fe) ratios (0.1, 0.3 and 0.5) on the structural and optical properties of cadmium oxide films (CdO) was studied, as these films were prepared on glass bases using the method of pulse laser deposition (PLD). The crystallization nature of the prepared films was examined by X-ray diffraction technique (XRD), which showed that the synthesis of the prepared films is polycrystalline, and Atomic Force Microscope (AFM) images also showed that the increased vaccination with Iron led to an increase in the crustal size ratio and a decrease in surface roughness, The absorption coefficient was calculated and the optical energy gap for the prepared thin films. It was found the absorption decreases and the energy gap decreases with the increase of doping ratio.

Doping of GaN by ion implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

AbstractIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 °C occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 µm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

Structural Characterization of Ion Beam Enhanced Solid Phase Epitaxial Regrowth by Raman, RBS, and X-Ray Analysis

1988 ◽  
Vol 126 ◽  
Author(s):  
John F. Knudsen ◽  
R. C. Bowman ◽  
P. M. Adams ◽  
R. Newman ◽  
J. P. Hurrell ◽  
...  
Keyword(s):  
Solid Phase ◽  
Ion Beam ◽  
Beam Current ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Epitaxial Regrowth ◽  
High Beam Current

ABSTRACTEpitaxial regrowth of deposited amorphous silicon has been previously described utilizing ion implantation amorphization, ion mixing and thermal anneal. This paper evaluates the effects of these process steps on crystalline quality utilizing Rutherford Backscattering (RBS), x-ray diffraction rocking curves and Raman scattering.In situ (during implantation) regrowth results in defective crystallinity. In contrast, when there is no in situ regrowth, the post anneal crystallinity is equivalent by RBS and x-ray evaluation to virgin single crystal wafers. In situ regrowth is most pronounced during the high beam current ion mixing type implants which produce wafer temperatures of about 250°C. The final crystalline quality which results from different sequences of amorphization and ion mixing implants, is strongly dependent upon the amount of in situ regrowth which has occurred. The greater the in situ regrowth the poorer the final crystalline quality.

Doping properties of the Ion-Beam-Sputtered SiGe Film

1996 ◽  
Vol 441 ◽  
Author(s):  
Wen-Jie Qi ◽  
Zhi-Sheng Wang ◽  
Zhi-Guang Gu ◽  
Guo-Ping Ru ◽  
Guo-Bao Jialig ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Polycrystalline Structure ◽  
X Ray ◽  
Post Annealing ◽  
And Diffusion

AbstractThe ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.

scholarly journals Influence of Different Annealing Temperatures on the Structural and Optical Properties of TiO2 Nanoparticles Synthesized via Sol-Gel Method: Potential Application as UV Sensor

2021 ◽  
Vol 21 (2) ◽  
pp. 279
Author(s):  
Nur Munirah Safiay ◽  
Rozina Abdul Rani ◽  
Najwa Ezira Ahmed Azhar ◽  
Zuraida Khusaimi ◽  
Fazlena Hamzah ◽  
...  
Keyword(s):  
Optical Properties ◽  
Anatase Phase ◽  
Sol Gel ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Tio2 Thin Films ◽  
Xrd Pattern ◽  
X Ray ◽  
Annealing Temperatures

In this research, TiO2 thin films were prepared using a simple sol-gel spin coating process. The films were characterized using Field Emission Scanning Electron Microscopy (FE-SEM), Energy Dispersive Ray (EDX), X-ray diffraction (XRD) and Ultraviolet–visible Spectrophotometer in order to investigate the influence of different annealing temperatures to the structural and optical properties of TiO2. The surface morphology images from FE-SEM display a uniform layer of nanoparticles with a sample of 500 °C possess the most uniform and the visible spherical grain of TiO2 nanoparticles. EDX spectra confirm the presence of Ti and O elements in the samples. The structural properties from the XRD pattern demonstrate that the films are crystalline at a temperature of 500 and 600 °C and the peak (101) intensity was increased as the annealing temperature increased. They exist in the anatase phase at the preferred plane orientation of (101). The calculated crystallite size for 500 and 600 °C samples is 19.22 and 28.37 nm, respectively. The films also possessed excellent absorption in the ultraviolet (UV) region with optical band gap energy ranging from 3.32 to 3.43 eV. These results can be fundamental for the fabrication of a UV sensing device.

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