A New Ion Beam Deposition Technique for Low Temperature Silicon Epitaxy

1995 ◽  
Vol 388 ◽  
Author(s):  
S. Mohajerzadeh ◽  
C.R. Selvakumar ◽  
D.E. Brodie ◽  
M.D. Robertson ◽  
J.M. Corbett
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Island Growth ◽  
Si Substrates ◽  
Silicon Epitaxy ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Si Films ◽  
Substrate Temperatures

AbstractWe report the results of an investigation to grow thin Si films on Si substrates at low substrate temperatures using ionized SiH4 gas generated with a Kaufman type ion gun. This investigation shows island-growth at higher substrate temperatures (500-700°C) in the form of square-based pyramids. by lowering the substrate temperature to 300°C, we were able to achieve a planar growth. the growth rate can be enhanced by introducing elemental Si from a thermal evaporation source. Scanning electron microscopy, transmission electron microscopy and electron diffraction analysis were used to study the crystalline quality of the samples prepared at different temperatures.

Aerosol-gel-derived Microcrystalline Hydroxyapatite Coatings

2002 ◽  
Vol 17 (6) ◽  
pp. 1482-1489 ◽  
Author(s):  
M. Manso ◽  
J. M. Martínez-Duart ◽  
M. Langlet ◽  
C. Jiménez ◽  
P. Herrero ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Calcium Nitrate ◽  
X Ray ◽  
Si Substrates ◽  
Hydroxyapatite Coatings ◽  
Transmission Electron ◽  
Phosphate Phase ◽  
Different Temperatures ◽  
Composition Structure ◽  
Highly Porous

Highly porous microcrystalline hydroxyapatite (HAP) coatings have been prepared from calcium nitrate and phosphoric acid based sols by the aerosol-gel process. The coatings were studied after sintering at different temperatures with the use of Fourier transform infrared spectroscopy, x-ray diffraction, energy disperse x-ray microanalysis, scanning electron microscopy, and transmission electron microscopy. The composition, structure, and morphology of the coatings sintered at 650 °C fit fairly well highly porous HAP. These coatings were reproduced onto TiO2/Si substrates and studied by Rutherford backscattering. It is shown that even after chemical etching, an adherent calcium phosphate phase remains attached to the TiO2/Si substrate.

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Tem Study of Temperature Influence on The Crystalline Quality of InGaAs/Si Epilayers

1992 ◽  
Vol 263 ◽  
Author(s):  
A. Vila ◽  
A. Cornet ◽  
J.R. Morante ◽  
D.I. Westwood
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Temperature Influence ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Different Temperatures

ABSTRACTA Transmission Electron Microscopy (TEM) study of In0.53Ga0.47As Molecular Beam Epitaxy films grown at different temperatures onto misoriented Si (100) substrates is presented. The evolution of the density of the different kind of defects is discussed as a function of the growth temperature in the range between 200 and 500° C. The results are compared with the characterization techniques of Double Crystal X-Ray Diffraction and Hall effect.

scholarly journals Effect of Growth Temperature on Structural Quality of In-Rich InxAl1−xN Alloys on Si (111) Substrate by RF-MOMBE

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Chun Chen ◽  
Yue-Han Wu ◽  
Jr.-Sheng Tian ◽  
Tzu-Chun Yen ◽  
Pei-Yin Lin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ternary Alloys ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Relationship Of ◽  
Substrate Temperatures

In-rich InAlN films were grown directly on Si (111) substrate by RF-MOMBE without any buffer layer. InAlN films were grown at various substrate temperatures in the range of 460–540°C with TMIn/TMAl ~3.3. Structural properties of InAlN ternary alloys were investigated with X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). It is shown that the deposited In0.8AlM0.2N (0001) films can be in epitaxy with Si (111) substrate with orientation relationship of [2̅110]InAlN//[11̅0]Si. Also, the growth rate around ~0.25 μm/h almost remains constant for growth in the temperature range from 460 to 520°C. Cross-sectional TEM from InAlN grown on Si (111) at 460°C shows that the epitaxial film is in direct contact with Si without any interlayer.

A Study on the Effect of Calcination Temperature on the Graphitization of Carbon Nanotubes Synthesized by the Decomposition of Methane

2013 ◽  
Vol 832 ◽  
pp. 56-61 ◽  
Author(s):  
Wei Wen Liu ◽  
Tijjani Adam ◽  
Azizan Aziz ◽  
Siang Piao Chai ◽  
Abdul Rahman Mohamed ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Calcination Temperature ◽  
Catalytic Decomposition ◽  
Average Diameter ◽  
Calcination Temperatures ◽  
Transmission Electron ◽  
Different Temperatures ◽  
Decomposition Of Methane

The effect of calcination temperature for Fe2O3/MgO catalysts on the formation of carbon nanotubes (CNTs) was examined. CNTs were synthesized over Fe2O3/MgO catalysts calcined at different temperatures by catalytic decomposition of methane at 1000°C. The synthesized CNTs were investigated by a combination of scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman spectroscopy. The results show that the effect of calcination temperatures greatly governed the diameter and the quality of the SWCNTs formed. The catalysts calcined at 500, 600 and 700°C produced CNTswith the diameters of 1.53, 1.95 and 2.97nm, respectively. Generally, an increase in the calcination temperature increases the average diameter and decreases the quality of the CNTs produced.

The Microstructure of Nickel Oxide Scales

1981 ◽  
Vol 39 ◽  
pp. 86-87
Author(s):  
M. T. Tinker ◽  
L. W. Hobbs
Keyword(s):  
Electron Microscopy ◽  
Nickel Oxide ◽  
Ion Beam ◽  
Oxide Scales ◽  
Nickel Substrate ◽  
Outward Diffusion ◽  
Transmission Electron ◽  
Nickel Substrates ◽  
Nickel Base ◽  
Technological Interest

There is considerable technological interest in oxidation of nickel because of the importance of nickel-base superalloys in high-temperature oxidizing environments. NiO scales on nickel grow classically, by outward diffusion of nickel through the scale, and are among the most studied of oxidation systems. We report here the first extensive characterization by transmission electron microscopy of nickel oxide scales formed on bulk nickel substrates and sectioned both parallel and transversely to the Ni/NiO interface.Electrochemically-polished nickel sheet of 99.995% purity was oxidized at 1273 K in 0.1 MPa oxygen partial pressure for times between 5 s and 25 h. Parallel sections were produced using a combination of electropolishing of the nickel substrate and ion-beam thinning of the scale to any desired depth in the scale. Transverse sections were prepared by encasing stacked strips of oxidized nickel sheet in epoxy resin, sectioning transversely and ion-beam thinning until thin area spanning one or more interfaces was obtained.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

The annealed (0001) α-alumina surface and its influence on thin-film growth

1995 ◽  
Vol 53 ◽  
pp. 336-337
Author(s):  
Michael W. Bench ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Energy Calculations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Low Energy Electron ◽  
Surface Nature

The growth of semiconductors, superconductors, metals, and other insulators has been investigated using alumina substrates in a variety of orientations. The surface state of the alumina (for example surface reconstruction and step nature) can be expected to affect the growth nature and quality of the epilayers. As such, the surface nature has been studied using a number of techniques including low energy electron diffraction (LEED), reflection electron microscopy (REM), transmission electron microscopy (TEM), molecular dynamics computer simulations, and also by theoretical surface energy calculations. In the (0001) orientation, the bulk alumina lattice can be thought of as a layered structure with A1-A1-O stacking. This gives three possible terminations of the bulk alumina lattice, with theoretical surface energy calculations suggesting that termination should occur between the Al layers. Thus, the lattice often has been described as being made up of layers of (Al-O-Al) unit stacking sequences. There is a 180° rotation in the surface symmetry of successive layers and a total of six layers are required to form the alumina unit cell.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

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