Supersaturated Substitutional Solid Solution after Solid Phase Epitaxial Regrowth by Incoherent Light Scanning.

1981 ◽  
Vol 4 ◽  
Author(s):  
L. Pedulli ◽  
L. Correra
Keyword(s):  
Solid Phase ◽  
Substitutional Solid Solution ◽  
Dislocation Loops ◽  
Incoherent Light ◽  
Dopant Activation ◽  
Epitaxial Regrowth ◽  
Electron Microscopy Analysis ◽  
Residual Damage ◽  
Microscopy Analysis ◽  
Minority Carriers

ABSTRACTSupersaturated substitutional solid solutions of 2×101531P+ /cm2 implanted at 10 keV in (100) Silicon were obtained after solid phase epitaxial regrowth using a scanning beam of incoherent light. The main results are: a) the maximum P+ concentration exceeds of about 5 times the maximum solid solubility at the temperature reached by the sample; b) the carrier concentration profile shows a complete dopant activation without diffusion of the implanted ions; c) an improvement of minority carriers diffusion length in the bulk is often observed; d) the values of carrier mobilities are similar to those obtained after liquid phase regrowth by pulsed ruby laser; e) a very good recovery of the damage is obtained: Rutherford backscattering spectra show that the dechanneling fraction is very close to the value of virgin samples and Trasmission Electron Microscopy analysis shows that the residual damage consists of dislocation loops of about 30 Å diameter confined in a region at about 500 Å depth.

The Influence of the Initial Supersaturation of Si Interstitial Atoms on the Relative Thermal Stability of Dislocation Loops in Silicon

2000 ◽  
Vol 610 ◽  
Author(s):  
F. Cristiano ◽  
B. Colombeau ◽  
B. de Mauduit ◽  
F. Giles ◽  
M. Omri ◽  
...  
Keyword(s):  
Relative Stability ◽  
Thermal Evolution ◽  
Dislocation Loops ◽  
Transmission Electron Microscopy Analysis ◽  
Transmission Electron ◽  
Interstitial Atoms ◽  
Electron Microscopy Analysis ◽  
Microscopy Analysis ◽  
Implantation Process ◽  
Formation Energies

AbstractIn this work, we have studied the relative stability of perfect (PDLs) and faulted (FDLs) dislocation loops formed during annealing of preamorphised silicon. In particular, we have investigated the effect of the initial supersaturation of Si interstitial atoms (Si(int)s) created by the implantation process on their thermal evolution. Transmission Electron Microscopy analysis shows that in samples with a low Si interstitial supersaturation, FDLs are the dominant defects while PDLs appear as the most stable defects in highly supersaturated samples. We have calculated the formation energies of both types of dislocation loops and found that, for defects of the same size, FDLs are more energetically stable than PDLs, if their diameter is smaller than 80 nm and viceversa. The application of these calculations to the samples studied in this work indicates that a direct correspondence exists between the formation energy of the two defect families and the number of atoms bound to them. Moreover, we have shown that the relative stability of FDLs and PDLs depends on the initial supersaturation of Si(int)s created during the implantation process.

Solid-Phase Epitaxy of Ti-Implanted LiNbO3

1987 ◽  
Vol 93 ◽  
Author(s):  
D. B. Poker
Keyword(s):  
Activation Energy ◽  
Optical Waveguides ◽  
Solid Phase ◽  
Complete Removal ◽  
Liquid Nitrogen Temperature ◽  
Index Of Refraction ◽  
Optical Index ◽  
Epitaxial Regrowth ◽  
Residual Damage ◽  
Water Saturated

ABSTRACTThe implantation of Ti into LiNbO3 has been studied as a means of altering the optical index of refraction to produce optical waveguides. Implanting 2 × 1017 atoms/cm2 of 360-keV Ti at liquid nitrogen temperature produces a highly damaged region extending to a depth of about 4000 Å. Solid-phase epitaxial regrowth of the LiNbO3 can be achieved by annealing in a water-saturated oxygen atmosphere at 400°C, though complete removal of the residual damage usually requires temperatures in excess of 800°C. The solid-phase epitaxial regrowth rate exhibits an activation energy of 2 eV at doses below 3 × 1016 Ti/cm2, but both the regrowth rate and activation energy decrease at higher doses. At doses above 1 × 1017 Ti/cm2, the solid-phase epitaxial regrowth occurs only at temperatures above 800°C.

Solid‐phase epitaxial regrowth and dopant activation of P‐implanted metastable pseudomorphic Ge0.12Si0.88on Si(100)

1995 ◽  
Vol 77 (10) ◽  
pp. 5160-5166 ◽  
Author(s):  
D. Y. C. Lie ◽  
N. D. Theodore ◽  
J. H. Song ◽  
M.‐A. Nicolet
Keyword(s):  
Solid Phase ◽  
Dopant Activation ◽  
Epitaxial Regrowth

Defect Control During Epitaxial Regrowth by Rapid Thermal Annealing

1982 ◽  
Vol 13 ◽  
Author(s):  
H. Baumgart ◽  
G. K. Celler ◽  
D. J. Lischner ◽  
McD. Robinson ◽  
T. T. Sheng
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Laser Annealing ◽  
Solid Phase ◽  
Good Control ◽  
Temperature Gradients ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Incoherent Light ◽  
Defect Control

ABSTRACTRapid Thermal Annealing (RTA) with tungsten halogen lamps provides excellent regrowth of silicon layers damaged by ion implantation. In addition to minimizing dopant redistribution, the inherent advantage of this technique is good control of temperature gradients. The latter is instrumental in reducing the density of extended defects in the annealed samples. In contrast, solid phase laser annealing, which involves steep temperature gradients, always leaves interstitial dislocation loops and point defect clusters. We present a comparative study of crystal quality following laser processing and incoherent light annealing as well as furnace annealing of As, P and B ion implanted Si wafers.

Electrical Characterisation of Shallow Pre-Amorphised +n junctions in silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
S. D. Brotherton ◽  
J. R. Ayres ◽  
J. B. Clegg ◽  
B. J. Goldsmith
Keyword(s):  
Leakage Current ◽  
Point Defects ◽  
Solid Phase ◽  
Deep Level ◽  
Dislocation Loops ◽  
Implantation Energy ◽  
Excess Silicon ◽  
Epitaxial Regrowth ◽  
High Concentrations

ABSTRACTAn examination of Si+ pre-amorphised p+n structures as a function of Si+ implantation energy and solid phase epitaxial regrowth temperature has revealed three different classes of defect all of which may influence the characteristics of the junction. They are point defects responsible for high concentrations of deep level donors, and interstitial dislocation loops both causing leakage current degradation, and excess silicon interstitials leading to enhanced junction movement.

Dopant Activation And Epitaxial Regrowth in P-Implanted Pseudomorphic Ge0.12Si0.88 Layers on Si (100)

1993 ◽  
Vol 321 ◽  
Author(s):  
D. Y. C. Lie ◽  
T. K. Cams ◽  
N. D. Theodore ◽  
F. Eisen ◽  
M.-A. Nicolet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Film Thickness ◽  
Electron Mobility ◽  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Dopant Activation ◽  
Projected Range ◽  
Epitaxial Regrowth ◽  
Virgin Sample

AbstractA pseudomorphic Ge0.12Si0.88 film 265 nm thick grown on a Si (100) substrate by molecular beam epitaxy was implanted at room temperature with a dose of 1.5 × 1015 cm2 of 100 keV P ions. The projected range of the ions is about 125 nm, which is well within the film thickness. Only the top portion of the Ge0.12Si0.88 layer was amorphized by the implantation. Both implanted and non-implanted samples were subsequently annealed in vacuum for 30 Minutes from 400 °C to 800 °C. Values of electron Hall sheet mobility and concentration in the implanted Ge0.12Si0.88 epilayer were measured after annealing. The solid phase epitaxial regrowth is complete at 550 °C, where the implanted phosphorus reaches - 100 % activation. The regrown Ge0.12Si0.88 layer exhibits inferior crystalline quality to that of the virgin sample and is relaxed, but the non-implanted portion of the film remains pseudomorphic at 550 °C. When annealed at 800 °C, the strain in the whole epilayer relaxes. The sheet electron mobility values measured at room temperature in the regrown samples (Tann ≥ 550 °C) are about 20% less than those of pure Si.

Boron Activation During Solid Phase Epitaxial Regrowth

2000 ◽  
Vol 610 ◽  
Author(s):  
C. D. Lindfors ◽  
K. S. Jones ◽  
M. E. Law ◽  
D. F. Downey ◽  
R. W. Murto
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Dose Range ◽  
Amorphous Layer ◽  
Silicon Wafers ◽  
Dopant Activation ◽  
Epitaxial Regrowth ◽  
High Concentrations ◽  
Secondary Ion ◽  
Resistance Data

AbstractTo continue scaling dimensions of transistors, higher dopant concentration levels are needed for ultra-shallow contacts. Therefore studies of dopant activation have been performed in preamorphized silicon wafers with various boron implant conditions to determine the maximum achievable dopant concentrations after Solid Phase Epitaxial Regrowth (SPER) alone. In the first experiment a silicon piece was preamorphized with a 30 keV, 1×1015 cm−2 and 90 keV, 1×1015 cm−2 Si+ implant followed by a 30 keV, 1×1015 cm−2 B+ implant. Solid phase epitaxial regrowth at 500 °C indicates that boron can be activated at low temperatures. Ultra Low Energy (ULE) implants were studied in the second experiment. Silicon wafers were implanted with 2.5 keV, 1×1015 cm−2 Si+ to amorphize and then B+ was implanted at 0.5 keV in the dose range of 1×1015 to 9×1015 cm−2. Samples were annealed in the temperature range of 500 to 650 °C. High concentrations of boron make it difficult to fully regrow amorphous layers and thus yield marginal electrical properties. Much of the boron remains inactive, particularly at the higher dose implants. In both experiments Variable Angle Spectroscopic Ellipsometry (VASE) is used to measure amorphous layer thickness and Hall effect measures active boron dose. For the first experiment, Secondary Ion Mass Spectrometry (SIMS) data compares chemical dose to active dose during the regrowth process. Sheet resistance data is obtained from a four point probe for the ULE implant experiment.

Material analysis techniques using the ion mill

1996 ◽  
Vol 54 ◽  
pp. 1034-1035
Author(s):  
J. P. Benedict ◽  
R. M. Anderson ◽  
S. J. Klepeis
Keyword(s):  
Polished Surface ◽  
Surface Material ◽  
Analysis Techniques ◽  
Material Analysis ◽  
Optical Inspection ◽  
Electron Microscopy Analysis ◽  
Microscopy Analysis ◽  
Argon Ions ◽  
The Impact ◽  
Scanning Electron

Ion mills equipped with flood guns can perform two important functions in material analysis; they can either remove material or deposit material. The ion mill holder shown in Fig. 1 is used to remove material from the polished surface of a sample for further optical inspection or SEM ( Scanning Electron Microscopy ) analysis. The sample is attached to a pohshing stud type SEM mount and placed in the ion mill holder with the polished surface of the sample pointing straight up, as shown in Fig 2. As the holder is rotating in the ion mill, Argon ions from the flood gun are directed down at the top of the sample. The impact of Argon ions against the surface of the sample causes some of the surface material to leave the sample at a material dependent, nonuniform rate. As a result, the polished surface will begin to develop topography during milling as fast sputtering materials leave behind depressions in the polished surface.

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