Cobalt and Titanium Metallization of SiGeC for Shallow Contacts

1996 ◽  
Vol 427 ◽  
Author(s):  
A. E Bair ◽  
T. L. Alford ◽  
Z. Atzmon ◽  
S. D. Marcus ◽  
D. C. Doller ◽  
...  
Keyword(s):  
Surface Layer ◽  
Electron Beam ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Techniques ◽  
Annealing Conditions ◽  
Contact Metallization ◽  
Glancing Angle ◽  
Device Structures

AbstractShallow contact metallization of SiGeC was studied in anticipation of this alloys use in low power applications. It has been shown that in the solid state reaction of Co on (100) Si, that Co is the moving species with proper annealing conditions. This prevents the formation of Kirkendal voiding in certain device structures. This work studies the Co and Ti metallization of SiGeC. A bilayer of 44 nm of Co on 7 nm of Ti, were electron beam evaporated onto epitaxially grown Si0.77Ge0.21C0.02. The samples were rapid thermal processed at 600 and 900 °C for up to two minutes in a nitrogen ambient. The analysis techniques used were Rutherford backscattering spectrometry which included the used of the 4.27 MeV 12C(α,α) 12C resonance reaction, glancing angle x-ray diffraction, During annealing at all temperatures, Co diffused through the Ti layer and formed CoSi. This phase was confirmed by x-ray diffraction. The Co displaced the Ti to the surface. At 600 °C, Ge diffused to the surface layer, while at 900 °C it was rejected back into the original SiGeC. The sample annealed at 600 °C was subsequently annealed at 900 °C. The Ge in the surface layer was rejected from the surface layer, diffused across the CoSi and back into the SiGeC.

Hardening of the Surface Layer of Silumin by Electron Beam

2013 ◽  
Vol 872 ◽  
pp. 162-166 ◽  
Author(s):  
Yurii F. Ivanov ◽  
Elizaveta A. Petrikova ◽  
Nikolay N. Cherenda ◽  
Anton D. Teresov
Keyword(s):  
Surface Layer ◽  
Electron Beam ◽  
Bending Strength ◽  
Nanocrystalline Structure ◽  
Electron Beam Treatment ◽  
Plastic Limit ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Core ◽  
Ultimate Bending Strength

In the present work has been carried out the treatment of silumin by high-intensity electron beam with different density of the input energy. The structure and phase composition of surface layer have been studied by the methods of X-ray diffraction and electron microscopy both scanning and diffraction transmission. The mechanisms are responsible for improvement of properties of modified material have been revealed. It has been shown that electron beam treatment of silumin is accompanied by the formation of multilayer submicro-and nanocrystalline structure and result in increasing the microhardness of the surface layer (towards the core) is ~ 3.5 times, the Young's modulus in a ~ 1.4 times, the ultimate bending strength (in ~ 1.2 times) and tensile strength (in ~ 1.4 times), the bending plastic limit (in ~ 1.2 times) and tensile (in ~ 1.8 times).

Selective catalytic reduction of NO by Co-Mn based nanocatalysts

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Vahid Zabihi ◽  
Mohammad Hasan Eikani ◽  
Mehdi Ardjmand ◽  
Seyed Mahdi Latifi ◽  
Alireza Salehirad
Keyword(s):  
Selective Catalytic Reduction ◽  
Catalytic Reduction ◽  
Energy Dispersive ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Techniques ◽  
Acidic Sites ◽  
Temperature Window ◽  
Temperature Programmed

Abstract One of the most significant aspects in selective catalytic reduction (SCR) of nitrogen oxides (NOx) is developing suitable catalysts by which the process occurs in a favorable way. At the present work SCR reaction by ammonia (NH3-SCR) was conducted using Co-Mn spinel and its composite with Fe-Mn spinel, as nanocatalysts. The nanocatalysts were fabricated through liquid routes and then their physicochemical properties such as phase composition, degree of agglomeration, particle size distribution, specific surface area and also surface acidic sites have been investigated by X-ray diffraction, Field Emission Scanning Electron Microscope, Energy-dispersive X-ray spectroscopy, energy dispersive spectroscopy mapping, Brunauer–Emmett–Teller, temperature-programmed reduction (H2-TPR) and temperature-programmed desorption of ammonia (NH3-TPD) analysis techniques. The catalytic activity tests in a temperature window of 150–400 °C and gas hourly space velocities of 10,000, 18,000 and 30,000 h−1 revealed that almost in all studied conditions, CoMn2O4/FeMn2O4 nanocomposite exhibited better performance in SCR reaction than CoMn2O4 spinel.

Problems Associated with Kα Doublet in Residual Stress Measurements

1979 ◽  
Vol 23 ◽  
pp. 333-339
Author(s):  
S. K. Gupta ◽  
B. D. Cullity
Keyword(s):  
Residual Stress ◽  
Silicon Powder ◽  
Lattice Parameter ◽  
Diffraction Peak ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Techniques ◽  
The Difference ◽  
Similar Accuracy

Since the measurement of residual stress by X-ray diffraction techniques is dependent on the difference in angle of a diffraction peak maximum when the sample is examined consecutively with its surface at two different angles to the diffracting planes, it is important that these diffraction angles be obtained precisely, preferably with an accuracy of ± 0.01 deg. 2θ. Similar accuracy is desired in precise lattice parameter determination. In such measurements, it is imperative that the diffractometer be well-aligned. It is in the context of diffractometer alignment with the aid of a silicon powder standard free of residual stress that the diffraction peak analysis techniques described here have been developed, preparatory to residual stress determinations.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

Yttrium Implantation and Manganese Addition Element Effects on the High Temperature Oxidation Resistance of a Model Steel

2008 ◽  
Vol 595-598 ◽  
pp. 897-905
Author(s):  
Eric Caudron ◽  
Régis Cueff ◽  
Christophe Issartel ◽  
N. Karimi ◽  
Frédéric Riffard ◽  
...  
Keyword(s):  
Oxidation Resistance ◽  
High Temperatures ◽  
Mixed Oxides ◽  
Rutherford Backscattering Spectrometry ◽  
High Energy ◽  
X Ray Diffraction ◽  
Temperature Oxidation ◽  
X Ray ◽  
Steel Oxidation ◽  
Yttrium Implantation

Manganese addition and subsequent yttrium implantation effects on extra low carbon steel were studied by Rutherford Backscattering Spectrometry (RBS), Reflection High Energy Electron Diffraction (RHEED), X-ray Diffraction (XRD) and Glancing Angle X-ray Diffraction (GAXRD). Thermogravimetry and in situ X-Ray Diffraction at 700°C and PO2=0.04 Pa for 24h were used to determine the manganese alloying addition and subsequent yttrium implantation effects on reference steel oxidation resistance at high temperatures. This study clearly shows the combined effect of manganese alloying addition and subsequent yttrium implantation which promotes the formation of several yttrium mixed oxides seem to be responsible for the improved reference steel oxidation resistance at high temperatures.

Simulations of High-Strain Electrostrictive Chlorinated Terpolymers

2003 ◽  
Vol 785 ◽  
Author(s):  
George J. Kavarnos ◽  
Thomas Ramotowski
Keyword(s):  
Vinylidene Fluoride ◽  
High Strain ◽  
Polymer Chains ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lamellar Structures ◽  
Annealing Conditions ◽  
Poly Vinylidene Fluoride ◽  
Electromechanical Responses ◽  
Kinetics Of

ABSTRACTChlorinated poly(vinylidene fluoride/trifluoroethylene) terpolymers are remarkable examples of high strain electrostrictive materials. These polymers are synthesized by copolymerizing vinylidene fluoride and trifluoroethylene with small levels of a third chlorinated monomer. The electromechanical responses of these materials are believed to originate from the chlorine atom, which, by its presence in the polymer chains and by virtue of its large van der Waals radius, destroys the long-range crystalline polar macro-domains and transforms the polymer from a normal to a high-strain relaxor ferroelectric. To exploit the strain properties of the terpolymer, it is desirable to understand the structural implications resulting from the presence of the chlorinated monomer. To this end, computations have been performed on model superlattices of terpolymers using quantum-mechanical based force fields. The focus has been on determining the energetics and kinetics of crystallization of the various polymorphs that have been identified by x-ray diffraction and fourier transform infrared spectroscopy. The chlorinated monomer is shown to act as a defect that can be incorporated into the lamellar structures of annealed terpolymer without a high cost in energy. The degree of incorporation of the chlorinated monomer into the crystal lattice is controlled by annealing conditions and ultimately determines the ferroelectric behavior of the terpolymers.

scholarly journals Structural Formation of UHMWPE Film Tracked by Real-Time Retardation Measurements during Uniaxial/Biaxial Stretching

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2292 ◽  
Author(s):  
Yoshinori Hashimoto ◽  
Shotaro Nishitsuji ◽  
Takashi Kurose ◽  
Hiroshi Ito
Keyword(s):  
Tensile Testing ◽  
X Ray Diffraction ◽  
Structural Formation ◽  
X Ray ◽  
Amorphous Phases ◽  
Analysis Techniques ◽  
Biaxial Stretching ◽  
Thermal Analysis Techniques ◽  
Ultra High Molecular Weight ◽  
Order Structures

This work reports on an experimental study of the stretching of ultra-high molecular weight polyethylene (UHMWPE) film in various uniaxial/biaxial stretching modes at various temperatures and stretching speeds. We examined the stress-birefringence relationship as a stress-optical rule (SOR) under uniaxial stretching and evaluated the stress-optical coefficient (SOC). Wide-angle X-ray diffraction (WAXD) measurements were applied to evaluate the contribution to birefringence of the crystalline and amorphous phases and to characterize stretching modes. In simultaneous biaxial stretching, the melting temperature (Tm) proved critical to structural formation. We applied thermal analysis techniques and tensile testing to evaluate higher order structures after each stretching mode.

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