The Effects of the Precursor Solutions on the Structure and the Properties of Sol-Gel Derived Bst Thin Films

AbstractWe have studied the effects of solvents and additives in the precursor solutions on the characteristics of barium strontium titanate (BST) thin films. The solution having two solvents, ie. acetic acid for barium acetate and strontium acetate and 2-methoxyethanol for titanium isopropoxide and also having an additive of ethylene glycol shows good stability and remains homogeneous even after a month of ageing. It produces excellent BST thin film without cracks. Dielectric constant, loss tangent at 10kHz and leakage current density at 3V of the BST(70/30) thin film made from this solution are 339, 0.052 and 13.3μA/cm2, respectively. We have also found that a Ta layer is a better diffusion barrier against Si than a Ti layer and is functional up to 750°C.

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THE DETERMINATION OF BARIUM STRONTIUM TITANATE THIN FILM BAND GAP ENERGY Ba0,15Sr0,85TiO3 USING ULTRAVIOLET-VISIBLE SPECTROSCOPY

SPEKTRA Jurnal Fisika dan Aplikasinya ◽

10.21009/spektra.051.02 ◽

2020 ◽

Vol 5 (1) ◽

pp. 11-20

Author(s):

Rahmi Dewi ◽

Krisman Krisman ◽

Zulkarnaen Zulkarnaen ◽

Rahmi Afrida Syahraini ◽

TS Luqman Husein

Keyword(s):

Thin Film ◽

Thin Layer ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Annealing Temperature ◽

Sol Gel ◽

Band Gap Energy ◽

Barium Strontium ◽

Vis Spectroscopy ◽

Bst Thin Film

A thin layer of Barium Strontium Titanate Ba0.15Sr0.85TiO3 (BST) was developed on a glass substrate using a sol-gel method with annealing temperatures and spin coating process at 3500 rpm for 30 seconds. The annealing temperature varied from 600oC, 650oC, and 700oC. Characterization of optical properties was developed using UV-Vis spectroscopy to determine the energy bandgap. The values of the BST thin layer energy band at the annealing temperature were 3.55 eV, 3.32 eV, and 3.10 eV, respectively. The results indicate that the BST thin film was a semiconductor material.

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Study on Microstructure and Ferroelectricity of Strontium Barium Titanate Thin Films Prepared by Sol-Gel Processing

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.320.202 ◽

2013 ◽

Vol 320 ◽

pp. 202-207 ◽

Cited By ~ 1

Author(s):

Lian Wei Shan ◽

Lai Guo Wang ◽

Wei Li ◽

Li Min Dong ◽

Zhi Dong Han ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Sol Gel ◽

Chelating Agent ◽

Frequency Dispersion ◽

Bst Thin Films ◽

Transmission Electron ◽

Bst Thin Film ◽

Inclined Angle ◽

Gel Processing

Sr0.5Ba0.5-xBixTiO3 (SBT) thin films were fabricated on a Pt/SiO2/Si substrate by sol-gel method. The effects of chelating agent acetylacetone (HAcHAc) on the formation temperature and the microstructure of Sr0.5Ba0.5-xBixTiO3 (SBT) thin films were investigated in this paper. The microstructure of BST thin films was examined by XRD and TEM. It is found that Bi3+ doping decreases dielectric loss, improves frequency dispersion for BST thin films. The peak of temperature-dependence of dielectric constant of Bi3+-doped BST thin films is compressed and moves to a low-temperature region. An inclined angle of approximately 1.8o between the two different polarization vectors was observed for BST thin film from the results of high-resolution transmission electron microscopy (HRTEM). The Pr, Ps and Ec was 0.22μC/cm2, 0.72μC/cm2 and 60Kv/cm respectively for Sr0.5Ba0.485Bi0.015TiO3 thin film at 100Hz, 20V.

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Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.727.942 ◽

2017 ◽

Vol 727 ◽

pp. 942-946 ◽

Cited By ~ 2

Author(s):

Juan Li ◽

Cong Chun Zhang ◽

Yan Lei Wang ◽

Yang Gao ◽

Xiao Lin Zhao

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Properties ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Perovskite Phase ◽

Rf Magnetron Sputtering ◽

Barium Strontium ◽

Metal Insulator Metal ◽

Bst Thin Film

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.

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Study of the Layer-Type BST Thin Film with X-ray Diffraction and X-ray Photoelectron Spectroscopy

Materials ◽

10.3390/ma15020578 ◽

2022 ◽

Vol 15 (2) ◽

pp. 578

Author(s):

Agata Lisińska-Czekaj ◽

Dionizy Czekaj

Keyword(s):

Thin Film ◽

Thin Films ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Photoelectron Spectroscopy ◽

Chemical Compositions ◽

X Ray Diffraction ◽

X Ray ◽

Barium Strontium ◽

Bst Thin Film

In the present paper, results of X-ray photoelectron studies of electroceramic thin films of barium strontium titanate, Ba1−xSrxTiO3 (BST), composition deposited on stainless-steel substrates are presented. The thin films were prepared by the sol-gel method. A spin-coating deposition of BST layers with different chemical compositions was utilized so the layer-type structure of (0-2) connectivity was formed. After the deposition, the thin-film samples were heated in air atmosphere at temperature T = 700 °C for 1 h. The surfaces of BST thin films subjected to thermal treatment were studied by X-ray diffraction. X-ray diffraction measurements confirmed the perovskite-type phase for all grown thin-film samples. The oxidation states of the elements were examined by the X-ray photoelectron spectroscopy method. X-ray photoelectron spectroscopy survey spectra as well as high-resolution spectra (photo-peaks) of the main metallic elements, such as Ti, Ba, and Sr, were compared for the layer-type structures, differing in the deposition sequence of the barium strontium titanate layers constituting the BST thin film.

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OPTICAL AND STRUCTURAL PROPERTIES OF NANO-SIZED BARIUM STRONTIUM TITANATE (Ba0.6Sr0.4TiO3) THIN FILM

Modern Physics Letters B ◽

10.1142/s0217984908015164 ◽

2008 ◽

Vol 22 (09) ◽

pp. 693-700 ◽

Cited By ~ 12

Author(s):

S. BOBBY SINGH ◽

H. B. SHARMA ◽

H. N. K. SARMA ◽

SUMITRA PHANJOUBAM

Keyword(s):

Thin Films ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Sol Gel ◽

Processing Technique ◽

Cubic Phase ◽

Bst Thin Films ◽

Barium Strontium ◽

Free Films ◽

Quartz Substrates

Barium strontium titanate ( Ba 0.6 Sr 0.4 TiO 3) or BST thin films on quartz substrates have been prepared by using a modified sol-gel processing technique. The starting materials are barium 2-ethylhexanoate Ba[CH 3( CH 2)3 CH(C 2 H 5) CO 2]2, strontium 2-ethylhexanoate Sr[CH 3( CH 2)3 CH(C 2 H 5) CO 2]2 and titanium (IV) isopropoxide Ti[CH 3 CH 3 CHO ]4. The precursors Ti[CH 3 CH 3 CHO ]4 except were synthesized in the laboratory. Transparent and crack-free films were fabricated on quartz substrates by spin coating. The as-fired films were found to be amorphous, which crystallized to cubic phase after annealing at 550°C in air for 1 hr. In this paper, we report the structural and optical properties of BST thin films prepared by the modified sol-gel process.

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Electrical and Structural Diagnostics of Barium Strontium Titanate (BST) Thin Films

MRS Proceedings ◽

10.1557/opl.2011.620 ◽

2011 ◽

Vol 1292 ◽

Author(s):

Supriya Ketkar ◽

Manoj Kumar Ram ◽

Ashok Kumar ◽

Thomas Weller ◽

Andrew Hoff

Keyword(s):

Thin Films ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Sol Gel ◽

Electrical Characterization ◽

Film Structure ◽

Production Costs ◽

Bst Thin Films ◽

Barium Strontium ◽

Metal Insulator Metal

ABSTRACTThe properties of radio frequency, rf magnetron sputtered Barium Strontium Titanate (Ba1-xSrxTiO3), BST, thin films were investigated and compared with BST thin films deposited by sol-gel method with the aim of determining relationships between the oxide deposition parameters, the film structure, and the electric field dependence. This work presents noncontact electrical characterization of BST films using Corona Kelvin metrology (C-KM) which has been employed earlier only in the silicon industry. The films were structurally characterized using thickness profilometer, X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. The use of sol-gel technique to fabricate small area metal-insulator-metal (MIM) structures is found to be beneficial from the point of saving fabrication time and production costs.

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KARAKTERISASI KAPASITOR BARIUM STRONTIUM TITANAT (BST) Ba0,75 Sr0,25 TiO3 , YANG DIBUAT MENGGUNAKAN METODE SOL-GEL

Komunikasi Fisika Indonesia ◽

10.31258/jkfi.16.1.65-69 ◽

2019 ◽

Vol 16 (1) ◽

pp. 65

Author(s):

Rahmi Dewi ◽

Tiara Pertiwi ◽

Krisman Krisman

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Dielectric Constant ◽

Impedance Spectroscopy ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Sol Gel ◽

Barium Strontium ◽

Scanning Electron

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.

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