Fabrication of Multi-Level Buried Oxide Layers by Oxygen-Ion-Implantation into Si/Ge multilayers

AbstractWe propose a novel technique based on preferential oxidation of Si in the Si/Ge system. Oxygen ions were implanted at 30 keV into Si/Ge multilayers while the substrate temperature was kept below 100°C. Significant oxygen concentration was then observed at the Si/Ge interfaces and at a thin Si layer embedded into the Ge layer. When the samples were then annealed above 400°c, the bonding state of the Si oxide approached that of SiO2. During this process, Ge atoms were expelled from the oxide layers. Transmission electron microscopy confirmed that silicon dioxide layers were formed. This new technique can be used to form semiconductor/insulator multilayered structures from Si/Ge multilayers.

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Microstructural and Compositional Characterization of SiC-On-Insulator Structures

Microscopy and Microanalysis ◽

10.1017/s1431927600017177 ◽

1999 ◽

Vol 5 (S2) ◽

pp. 770-771

Author(s):

Manabu Ishimaru ◽

Robert M. Dickerson ◽

Kurt E. Sickafus

Keyword(s):

Ion Implantation ◽

Integrated Circuit ◽

High Speed ◽

Scanning Transmission Electron Microscope ◽

Oxygen Ions ◽

Oxygen Ion ◽

Transmission Electron ◽

Scanning Transmission ◽

Oxygen Ion Implantation

As the size of Si integrated circuit structures is continually reduced, interest in semiconductor-oninsulator (SOI) structures has heightened. SOI structures have already been developed for Si using oxygen ion implantation. However, the application of Si devices is limited due to the physical properties of Si. As an alternative to Si, SiC is a potentially important semiconductor for high-power, high-speed, and high-temperature electronic devices. Therefore, this material is a candidate for expanding the capabilities of Si-based technology. In this study, we performed oxygen ion implantation into bulk SiC to produce SiC-on-insulator structures. We examined the microstructures and compositional distributions in implanted specimens using transmission electron microscopy and a scanning transmission electron microscope equipped with an energy-dispersive X-ray spectrometer (STEM-EDX).Figures 1(a) and 2(a) show bright-field images of 6H-SiC implanted with 180 keV oxygen ions at 650 °C to fluences of 7xl017 and 1.4xl018 cm−2, respectively. Three regions with distinct image contrast are apparent in Figs. 1(a) and 2(a), as indicated by A, B, and C.

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Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.021001 ◽

2010 ◽

Vol 49 (2) ◽

pp. 021001 ◽

Cited By ~ 2

Author(s):

Jin-Yu Shiu ◽

Chung-Yu Lu ◽

Ting-Yi Su ◽

Rong-Tan Huang ◽

Herbert Zirath ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electrical Characterization ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Oxygen Ion ◽

Transmission Electron ◽

Oxygen Ion Implantation

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Strong Blue and Violet Light Emission from Silicon- and Germanium-Implanted Silicon-Dioxide Films

MRS Proceedings ◽

10.1557/proc-486-175 ◽

1997 ◽

Vol 486 ◽

Cited By ~ 7

Author(s):

L. Rebohle ◽

I. E. Tyschenko ◽

J. Von Borany ◽

B. Schmidt ◽

R. Grötzschel ◽

...

Keyword(s):

Electron Microscopy ◽

Silicon Dioxide ◽

Light Emission ◽

Si Substrate ◽

Oxide Layers ◽

Naked Eye ◽

Annealing Temperatures ◽

Violet Light ◽

Transmission Electron ◽

Silicon And Germanium

AbstractPhotoluminescence (PL) and electroluminescence (EL) from Si+- and Ge+-implanted SiO2 layers thermally-grown on a Si substrate were studied. The PL spectra were recorded after annealing at temperatures in the range of 400° to 1200°C. Single-peak PL at 460 nm and doublepeak PL at 420 and 385 nm due to Si+-implanted and Ge+-implanted oxide layers, respectively, reached a maximum following heat treatment at 500°C for 30 min. The EL spectra from the Gerich oxides after annealing at 1000°C correlated very well with the PL signal, and showed a linear dependence on the injection current. The EL emission was strong enough to be readily seen with the naked eye, and the EL efficiency was estimated to be about 5×10−4. High-resolution transmission electron microscopy (HRTEM) analysis showed that the formation of nanocrystals in the implanted oxide layers occurred at annealing temperatures in excess of 800°C. The observed light emission is attributable to the presence of-≡Si-Si≡, ≡Si-Ge≡ and ≡Ge-Ge≡ centres in SiO2.

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Oxygen Ion Implantation into Germanium

MRS Proceedings ◽

10.1557/proc-107-137 ◽

1987 ◽

Vol 107 ◽

Cited By ~ 1

Author(s):

T.P. Sjoreen ◽

N.M. Ravindra ◽

M.K. El-Ghor ◽

D. Fathy

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Dense Network ◽

Cross Sectional ◽

Oxygen Ion ◽

Transmission Electron ◽

Spin Resonance ◽

Buried Layer ◽

Substrate Temperatures ◽

Oxygen Ion Implantation

AbstractSingle crystal (111) and (100) Ge wafers were implanted with 16O (180 keV, 2.0 x 1018/cm2, 14–28 ¼A/cm2 ) at substrate temperatures of 250, 330, and 500°C. Implanted samples were annealed at 350, 450, 550, and 650°C for 30–90 minutes in an Ar ambient. Rutherford backscattering channeling analysis and cross-sectional transmission electron microscopy indicate that an amorphous buried layer is formed by implantation and that the overlayer contains a dense network of precipitates. Electron spin resonance measurements indicate that the layer does not contain GeO2, but rather oxygen deficient GeO2. Annealing of samples up to 550°C showed no change in the morphology, however, after annealing at 650°C the buried layer was gone and all that remained was a damaged Ge substrate with little or no oxygen. Further annealing for 60 min left nearly virgin Ge.

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HVEM and Electrical Characterisation of SIMOX Structures

MRS Proceedings ◽

10.1557/proc-107-129 ◽

1987 ◽

Vol 107 ◽

Author(s):

A. De Veirman ◽

K. Yallup ◽

J. Van Landuyt ◽

H.E. Maes ◽

K. De Meyer ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Low Temperature ◽

Defect Structure ◽

Silicon On Insulator ◽

Electrical Measurements ◽

Oxygen Ion ◽

Transmission Electron ◽

Oxygen Ion Implantation ◽

Subsequent Thermal Annealing

AbstractThis paper reports on a study of the Silicon-On-Insulator (SOI) structures obtained by oxygen ion implantation (SIMOX) and subsequent thermal annealing. With Transmission Electron Microscopy (TEM) a novel defect structure is revealed in the case of low temperature annealings. Electrical measurements of test devices are performed and a correlation with impurity decoration of defects is investigated.

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Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

MRS Proceedings ◽

10.1557/proc-76-259 ◽

1986 ◽

Vol 76 ◽

Author(s):

L. Dori ◽

M. Arienzo ◽

Y. C. Sun ◽

T. N. Nguyen ◽

J. Wetzel

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Silicon Dioxide ◽

Oxygen Vacancies ◽

Interface Roughness ◽

Cross Sectional ◽

Oxide Charge ◽

Transmission Electron ◽

Redistribution Of Hydrogen ◽

Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

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A novel technique to synthesis of tenorite (CuO) nanoparticles from low concentration CuSO4 solution

Journal of Mining and Metallurgy Section B Metallurgy ◽

10.2298/jmmb1101073d ◽

2011 ◽

Vol 47 (1) ◽

pp. 73-78 ◽

Cited By ~ 35

Author(s):

E. Darezereshki ◽

F. Bakhtiari

Keyword(s):

Electron Microscopy ◽

Decomposition Method ◽

Raw Materials ◽

Spherical Shape ◽

Cuo Nanoparticles ◽

X Ray Diffraction ◽

X Ray ◽

Thermal Decomposition Method ◽

Novel Technique ◽

Transmission Electron

In this study CuO nanoparticles were prepared via direct thermal decomposition method using basic copper sulphates as wet chemically synthesized precursor which was calcined in air at 750?C for 2h. Samples were characterized by thermogravimetric (TG-DSC), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), infrared spectrum (IR), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The XRD, EDS, and IR results indicated that the synthesized CuO particles were pure. The SEM and TEM results showed that the CuO nanoparticles were of approximate spherical shape, and 170?5 nm in size. Using this method, Cuo nanoparticles could be produced without using organic solvent, expensive raw materials, and complicated equipment.

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