Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source

1996 ◽  
Vol 449 ◽  
Author(s):  
M. S. H. Leung ◽  
R. Klockenbrink ◽  
C. Kisielowski ◽  
H. Fujii ◽  
J. Krüger ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Layer Growth ◽  
Ion Source ◽  
Growth Mode ◽  
Mbe Growth ◽  
Hollow Anode ◽  
Cubic Gan ◽  
Dimensional Growth ◽  
Nitrogen Ion ◽  
Pressure Controlled

ABSTRACTGaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~ 0.5 µm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs though a minimum carrier concentration of ~ 1015 cm−3 was achieved.

A RHEED Study of MBE Growth of ZnSe on GaAs (111) A-(2 × 2)

2003 ◽  
Vol 10 (04) ◽  
pp. 669-675
Author(s):  
F. S. Gard ◽  
J. D. Riley ◽  
R. Leckey ◽  
B. F. Usher
Keyword(s):  
Growth Rate ◽  
Electron Diffraction ◽  
Substrate Temperature ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Mode ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Mbe Growth ◽  
Atomic Flux

ZnSe epilayers have been grown under various Se/Zn atomic flux ratios in the range of 0.22–2.45 at a substrate temperature of 350°C on Zn pre-exposed GaAs (111) A surfaces. Real time reflection high energy electron diffraction (RHEED) observations have shown a transition from a two-dimensional (2D) to a three-dimensional (3D) growth mode. The transition time depends directly upon the growth rate. A detailed discussion is presented to explore the cause of this change in the growth mode.

Transition from laminar to three-dimensional growth mode in pulsed laser deposited BiFeO3 film on (001) SrTiO3

2012 ◽  
Vol 101 (20) ◽  
pp. 201602 ◽  
Author(s):  
Priya V. Chinta ◽  
Sara J. Callori ◽  
Matthew Dawber ◽  
Almamun Ashrafi ◽  
Randall L. Headrick
Keyword(s):  
Three Dimensional ◽  
Pulsed Laser ◽  
Growth Mode ◽  
Bifeo3 Film ◽  
Dimensional Growth

Effects of Stress on Step Energies and Surface Roughness

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 27-30 ◽  
Author(s):  
Christopher Roland
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Layer Growth ◽  
Growth Mode ◽  
Misfit Dislocations ◽  
Layer By Layer ◽  
Strained Layers ◽  
The Subject ◽  
Growth Changes

Strain relaxation in lattice-mismatched, heteroepitaxial systems is one of the classic problems in materials physics, which has gained new urgency with the increased applications of strained layers in microelectronic systems. In general both the structure and the integrity of the thin films are strongly influenced by strain. For instance it has long been known that under strain, the growth changes from an initial layer-by-layer growth mode to one with three-dimensional islanding. In the seminal works of van der Merwe, and Matthews and Blakeslee, this change in growth mode is explained in terms of the introduction of strain-relieving misfit dislocations, which appear when the film has reached some critical thickness. Recently it has become clear that this change in growth mode can take place even without the introduction of misfit dislocations. Such dislocation-free coherent islanding, or “roughening,” has been observed experimentally both in Ge/Si and in InGaAs/GaAs systems. Furthermore recent experiments show that in Ge/Si(100) systems, the thin films display a curious asymmetry with respect to the sign of the strain: Films under compression roughen by forming coherent islands while those under tension remain relatively smooth. A possible mechanism behind this strain-induced type of roughening is the subject of this article.

Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering

MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 115-119 ◽  
Author(s):  
Koichi Matsushima ◽  
Tomoaki Ide ◽  
Daisuke Yamashita ◽  
Hyunwoong Seo ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Point Defects ◽  
Deposition Temperature ◽  
Strain Energy ◽  
Room Temperature ◽  
Three Dimensional ◽  
Lattice Relaxation ◽  
Rf Magnetron Sputtering ◽  
Growth Mode ◽  
Dimensional Growth ◽  
Atomically Flat

ABSTRACTWe study effects of deposition temperature on growth mode and surface morphology of hetero-epitaxial (ZnO)x(InN)1-x (ZION) films on ZnO templates. ZION films deposited at low temperature of RT-250oC grow two dimensionally, whereas ZION films deposited at high temperature of 350-450oC grow three dimensionally. Growth mode is changed from two-dimensional growth mode to three-dimensional one, because the critical thickness where film strain begin to relax decreases with increasing the deposition temperature. At high deposition temperatures, the number of point defects in ZION films decreases because migration of adatoms on the growing surface is enhanced. The strain energy in ZION films increases with increasing the deposition temperature, since the strain energy is not released by point defects. Therefore, lattice relaxation for the higher deposition temperature begins at the smaller film thickness to release the strain energy. As a result, ZION films with atomically-flat surface were obtained even at RT.

scholarly journals The SiC Single Crystal Growth from Nanomaterial Precursor

MRS Advances ◽  
2019 ◽  
Vol 4 (50) ◽  
pp. 2709-2715
Author(s):  
Yoshimitsu Yamada
Keyword(s):  
Crystal Growth ◽  
Electric Field ◽  
Single Crystal ◽  
Particle Deposition ◽  
Three Dimensional ◽  
Layer Growth ◽  
Seed Crystal ◽  
Layer By Layer ◽  
Remarkable Effect ◽  
Dimensional Growth

ABSTRACTUnlike the conventional layer by layer growth ,three dimensional growth experiments of SiC single crystal by the Chemical Particle Deposition (CPD)method were carried out both on the polar and nonpolar plane of the SiC seed crystal. The comparison of the morphology of the grown crystals on both samples indicated that the electric field formed by the seed crystal strongly effected the diffusion of the supplied Si and C atoms and their compounds to grow the epitaxial crystal. In spite of the low ionicity of Si-C bonds, this remarkable effect of the electric field on the three dimensional crystal growth mechanism in the CPD method strongly suggested its contribution to the ordering of the stacked layers with its long working range, beyond the deformed boundary layers between the seed surface and the grown crystal.

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