Nonlinear Current-Voltage Characteristics of Homojunctions Made by Zinc Oxide Single Crystals

1996 ◽  
Vol 458 ◽  
Author(s):  
Takeshi Harada ◽  
Yoshinobu Nakamura ◽  
Akira Kishimoto ◽  
Naobumi Motohira ◽  
Hiroaki Yanagida
Keyword(s):  
Zinc Oxide ◽  
Single Crystals ◽  
Electrical Characterization ◽  
Earth Metal ◽  
Chemical Vapor ◽  
Current Voltage ◽  
Zno Varistors ◽  
Zno Crystal ◽  
Single Boundary

ABSTRACTZinc oxide (ZnO) single crystals are grown by the traditional chemical vapor reaction method and ZnO crystal pairs with a single boundary are successfully obtained. The obtained specimens with one ZnO–ZnO boundary (ZnO homojunction) show nonlinear current-voltage (I–V) characteristics without the addition of Bi2O3, CoO, MnO2, and/or rare earth metal oxides. A specimen with higher breakdown voltage shows superior nonlinearity with negative resistivity in its I–V characteristics. Electrical characterization of the ZnO homojunction is conducted and extremely slow response with the current (or voltage) stress is confirmed. The phenomenon had never been observed in commercial ZnO varistors. The surface temperature of the ZnO homojunction is enhanced by larger applied current. The effect of the Joule heat on the nonlinearity in the I–V curves of the ZnO homojunction is discussed.

scholarly journals Charge transport in nanoparticular thin films of zinc oxide and aluminum-doped zinc oxide

2015 ◽  
Vol 3 (7) ◽  
pp. 1468-1472 ◽  
Author(s):  
Thomas Lenz ◽  
Moses Richter ◽  
Gebhard J. Matt ◽  
Norman A. Luechinger ◽  
Samuel C. Halim ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Charge Transport ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

In this work, we report on the electrical characterization of nanoparticular thin films of zinc oxide and aluminum-doped ZnO. Temperature-dependent current–voltage measurements revealed that charge transport is well described by the Poole–Frenkel model.

Electrical Characterization of Thin Single Crystals of Sexithiophene

1997 ◽  
Vol 488 ◽  
Author(s):  
C. Daniel Frisbie ◽  
Eric L. Granstrom ◽  
Michael J. Loiacono
Keyword(s):  
Atomic Force Microscopy ◽  
Single Crystals ◽  
Thermal Evaporation ◽  
Electrical Characterization ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Gold Substrates

AbstractExtremely thin, single crystals of sexithiophene (6T), 2–14 nm thick and 2–5 μm in length and width, can be grown an flat gold substrates by thermal evaporation. The thickness dimension corresponds to 1–6 monolayers (ML) of 6T molecules arranged with their long axes nearly perpendicular to the substrate. We have measured the current-voltage (I-V) characteristics through the thickness of these crystallites, after doping them with iodine, using conducting probe atomic force microscopy (CPAFM). The I-V traces are linear in the ±50 mV regime. The conductance (I/V) of the doped 6T crystals does not decrease monotonically with increasing thickness as might be expected, but instead has a maximum at 3 ML thickness, and we discuss several possible explanations for this observation.

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 460-464
Author(s):  
Rabia Y. Khosa ◽  
J.T. Chen ◽  
K. Pálsson ◽  
Robin Karhu ◽  
Jawad Hassan ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Single Crystalline ◽  
Current Voltage ◽  
Metal Organic ◽  
Mis Capacitors ◽  
Organic Chemical Vapor Deposition

We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO2 layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Electrical Characterization of In2Se3 Single Crystals

1991 ◽  
Vol 126 (2) ◽  
pp. 437-442 ◽  
Author(s):  
G. Micocci ◽  
A. Tepore ◽  
R. Rella ◽  
P. Siciliano
Keyword(s):  
Single Crystals ◽  
Electrical Characterization

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

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