Thermal Cycling Fatigue In Aluminum-Alloy Thin Films On Silicon Substrate

1997 ◽  
Vol 505 ◽  
Author(s):  
J. Koike ◽  
S. Utsunomiya ◽  
K. Maruyama
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Aluminum Alloy ◽  
Thermal Cycling ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Crack Formation ◽  
Continuous Decrease ◽  
Thermal Cycling Fatigue

ABSTRACTThermal cycling was performed in Al-lmo%Si thin films deposited on Si wafers. After a given number of cycling between room temperature and 723 K, residual stress was measured at room temperure. Residual stress was found to increase with increasing the cycling number up to the 4th cycle, followed by further a continuous decrease by further cycling. The intial increase was found to be related to the increase of lattice dislcocations and their tangling. The following decrease was caused by crack formation along grain boundaties or by film delamination in some cases.

Thermal cycling fatigue and deformation mechanism in aluminum alloy thin films on silicon

1998 ◽  
Vol 13 (11) ◽  
pp. 3256-3264 ◽  
Author(s):  
J. Koike ◽  
S. Utsunomiya ◽  
Y. Shimoyama ◽  
K. Maruyama ◽  
H. Oikawa
Keyword(s):  
Thin Films ◽  
Aluminum Alloy ◽  
Thermal Cycling ◽  
Deformation Mechanism ◽  
Thermal Cycling Fatigue

Microscale Laser Shock Peening of Thin Films, Part 1: Experiment, Modeling and Simulation

2004 ◽  
Vol 126 (1) ◽  
pp. 10-17 ◽  
Author(s):  
Wenwu Zhang ◽  
Y. Lawrence Yao ◽  
I. C. Noyan
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Substrate ◽  
Metal Film ◽  
Shock Pressure ◽  
Laser Shock Peening ◽  
Laser Shock ◽  
Stress Strain ◽  
Laser Shock Processing ◽  
Shock Peening

Microscale Laser Shock Peening (LSP), also known as Laser Shock Processing, is a technique that can be potentially applied to manipulate residual stress distributions in metal film structures and thus improve the fatigue performances of micro-devices made of such films. In this study, microscale LSP of copper films on single crystal silicon substrate is investigated. Before and after-process curvature measurement verifies that sizable compressive residual stress can be induced in copper thin films using microscale LSP. Improved modeling work of shock pressure is summarized and the computed shock pressure is used as loading in 3D stress/strain analysis of the layered film structure. Simulation shows that the stress/strain distribution in the metal film is close to equi-biaxial and is coupled into the silicon substrate.

scholarly journals Residual Stress and Microstructural Damage of Polycrystalline Copper Thin Films after Thermal Cycling

2004 ◽  
Vol 53 (7) ◽  
pp. 788-794 ◽  
Author(s):  
Keisuke TANAKA ◽  
Toshimasa ITO ◽  
Yoshiaki AKINIWA ◽  
Hiroyuki OHTA
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Thermal Cycling ◽  
Polycrystalline Copper ◽  
Microstructural Damage

Constraint Effects on Cohesive Failures in Low-k Dielectric Thin Films

2005 ◽  
Vol 863 ◽  
Author(s):  
Ting Y. Tsui ◽  
Andrew J. McKerrow ◽  
Joost J. Vlassak
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Silicon Substrate ◽  
Buffer Layers ◽  
Cohesive Failure ◽  
Lag Model ◽  
Buffer Layer Thickness ◽  
Cds Film

AbstractOne of the most common forms of cohesive failure observed in brittle thin films subjected to a tensile residual stress is channel cracking, a fracture mode in which through-film cracks propagate in the film. The crack growth rate depends on intrinsic film properties, residual stress, the presence of reactive species in the environment, and the precise film stack. In this paper, we investigate the effect of various buffer layers sandwiched between a brittle carbon-doped-silicate (CDS) film and a silicon substrate on channel cracking of the CDS film. The results show that channel cracking is enhanced if the buffer layer is more compliant than the silicon substrate. Crack velocity increases with increasing buffer layer thickness and decreasing buffer layer stiffness. This is caused by a reduction of the constraint imposed by the substrate on the film and a commensurate increase in energy release rate. The degree of constraint is characterized experimentally as a function of buffer layer thickness and stiffness, and compared to the results of a simple shear lag model that was proposed previously.

High Quality AlN Thin Films Deposited by Middle-Frequency Magnetron Sputtering at Room Temperature

2014 ◽  
Vol 787 ◽  
pp. 227-231 ◽  
Author(s):  
Chuan Li ◽  
Lin Shu ◽  
Li Jun He ◽  
Xing Zhao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Aluminum Nitride ◽  
Buffer Layer ◽  
Room Temperature ◽  
Residual Tensile Stress ◽  
High Quality ◽  
Polycrystalline Aluminum ◽  
Aln Buffer

A study of depositing high quality c-axis oriented polycrystalline aluminum nitride thin film at room temperature was presented. Aluminum nitride films were grown by mid-frequency (MF) reactive sputtering. Metallic aluminum target was used to deposit AlN films in Ar/N2 gas mixture. A 50nm thick of N-rich AlN buffer layer was deposited at the initial stage of sputtering process to improve the film quality. The composition, preferred orientation and residual stress of the films were analyzed by EDS, XRD and Raman microscope, respectively. The results showed that the N-rich AlN buffer layer improved the textured degree and reduced the residual stress significantly of the AlN thin films. The near stoichiometric AlN thin film with highly textured degree was obtained. The FWHM value of the rocking curve for (0002) diffraction peak was about 1.6°, and the residual tensile stress was about 500MPa. The piezoelectric d33 coefficient increased with the decreasing of FWHM value, and the highest d33 coefficient of 3.6 pF/C was obtained.

Numerical Simulation of the Cold Expansion and Residual Stress Relaxation for Aluminum Alloy 7050

2011 ◽  
Vol 117-119 ◽  
pp. 1656-1661
Author(s):  
Di Guan ◽  
Qin Sun
Keyword(s):  
Residual Stress ◽  
Aluminum Alloy ◽  
Stress Relaxation ◽  
Room Temperature ◽  
Element Model ◽  
Residual Stress Distribution ◽  
Residual Stress Field ◽  
Cold Expansion ◽  
Beneficial Effects ◽  
Residual Stress Relaxation

Cold expansion is a well-known technique for improving the fatigue life of fastener holes in aeronautical structures by introducing a compressive residual stress field around them. In this paper, a 3-D finite element model is used to analyze the residual stress distribution and relaxation around an expanded hole for aluminum alloy 7050. The results reveal that the cutting process of split sleeve cold expansion and creep are main reason for residual stress relaxation in room temperature, which may limit the beneficial effects of cold expansion.

Thermal Stability of Copper-Aluminum Alloy Thin Films for Barrierless Copper Metallization on Silicon Substrate

2017 ◽  
Vol 46 (8) ◽  
pp. 4891-4897 ◽  
Author(s):  
C. P. Wang ◽  
T. Dai ◽  
Y. Lu ◽  
Z. Shi ◽  
J. J. Ruan ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Aluminum Alloy ◽  
Silicon Substrate ◽  
Copper Metallization ◽  
Copper Aluminum ◽  
Thermal Stability Of

Thermally Induced Stresses in Passivated Thin Films and Patterned Lines of AlSiCu

1994 ◽  
Vol 338 ◽  
Author(s):  
U. Burges ◽  
H. Helneder ◽  
H. KÖrner ◽  
H. Schroeder ◽  
W. Schilling
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Aspect Ratio ◽  
Thermal Cycling ◽  
High Temperatures ◽  
Room Temperature ◽  
Elastic Behaviour ◽  
Thermally Induced ◽  
Induced Stresses ◽  
Beam Technique

ABSTRACTA bending beam technique was used to measure the mechanical stresses in AlSi(l%)Cu(0.5%) blanket films as well as in patterned lines (aspect ratio: 0.8) - unpassivated and passivated with SiNx - during thermal cycling from –170°C or room temperature to 450°C.Main results are:a) No significant differences in unpassivated and passivated blanket films with thickness ranging from 0.2 µm to 3.2 µm.b) In unpassivated patterned lines of 0.8 µm thickness the stresses across the lines are very small, while parallel to the lines they show nearly elastic behaviour, except at high temperatures.c) In passivated patterned lines the stresses are much higher than in blanket films, very similar parallel and across the line and nearly elastic. The stress relaxation is small compared with blanket films and depends strongly on the temperature.

scholarly journals Stress and Microstructure Evolution in Mo Thin Films without or with Cover Layers during Thermal-Cycling

Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 3926
Author(s):  
Eunmi Park ◽  
Marietta Seifert ◽  
Gayatri K. Rane ◽  
Siegfried B. Menzel ◽  
Thomas Gemming ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Cycling ◽  
Microstructure Evolution ◽  
Room Temperature ◽  
In Situ Stress ◽  
Intrinsic Stress ◽  
Plastic Behavior ◽  
Cover Layer ◽  
Si Substrates ◽  
Stress Behavior

The intrinsic stress behavior and microstructure evolution of Molybdenum thin films were investigated to evaluate their applicability as a metallization in high temperature microelectronic devices. For this purpose, 100 nm thick Mo films were sputter-deposited without or with an AlN or SiO2 cover layer on thermally oxidized Si substrates. The samples were subjected to thermal cycling up to 900 °C in ultrahigh vacuum; meanwhile, the in-situ stress behavior was monitored by a laser based Multi-beam Optical Sensor (MOS) system. After preannealing at 900 °C for 24 h, the uncovered films showed a high residual stress at room temperature and a plastic behavior at high temperatures, while the covered Mo films showed an almost entirely elastic deformation during the thermal cycling between room temperature and 900 °C with hardly any plastic deformation, and a constant stress value during isothermal annealing without a notable creep. Furthermore, after thermal cycling, the Mo films without as well as with a cover layer showed low electrical resistivity (≤10 μΩ·cm).

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