Rapid Thermal Annealing of As in Si

1985 ◽  
Vol 52 ◽  
Author(s):  
J. L. Hoyt ◽  
J. F. Gibbons
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Vacuum ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Wide Range ◽  
Time Cycle ◽  
Series Of Experiments ◽  
And Control ◽  
Measurement And Control

ABSTRACTThe results of a detailed investigation of the diffusion of ion implanted As in Si during Rapid Thermal Annealing (RTA) are reported. A series of experiments has been performed on samples implanted with As in a wide range of concentrations. The use of an improved thermocouple bonding technique enables precise measurement and control of the temperature versus time cycle for each individual sample. The RTA apparatus is designed to perform high vacuum annealing, eliminating the complications associated with point defect generating mechanisms at the surface, which are known to influence the diffusion of impurities in Si. Sample analysis includes depth profiling by SIMS and RBS, and electrical characterization employing VanderPauw and Spreading Resistance measurements.The resulting profiles have been analyzed via a numerical solution of the diffusion equation subject to the appropriate boundary conditions. With an effective As diffusivity of the form we find good simulation of all measured profiles with the standard values of D0 and D- from SUPREMIII and a one parameter fit to D= Recent results on the redistribution of low dose As implants in heavily phosphorus doped Si illustrate the strong Fermi level dependence. The model has also been successfully used to simulate RTA data in the literature where careful temperature measurements have been made.

Rapid Thermal Annealing of As in Si

1989 ◽  
Vol 146 ◽  
Author(s):  
N.T. Shih ◽  
F.S. Huang ◽  
C.H. Chu ◽  
W.S. Chen
Keyword(s):  
Electric Field ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chebyshev Polynomial ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Thermal Treatments ◽  
Hot Electron ◽  
Polynomial Distribution ◽  
Electron Effects

ABSTRACTThe results of a detailed investigation of diffusion of ion implanted As in Si during Rapid Thermal Annealing are reported. A series of experiments has been performed on samples prepared for various thermal treatments, such as peroxidation and preheat. The RTA conditions were chosen at 850°C for 15 seconds in order to study the metastable state. Sample analysis includes depth profiling by RBS and Spreading Resistance measurements, electrical characterization employing Hall measurements, and residual defects by cross-section TEM and planar image. The carrier concentration profile shows the different extent of the mixed Gaussian-Chebyshev polynomial distribution for various prepared samples. We believe the neutral interstitial state I°(Si) survives during RTA for asreceived samples. It gives a Gaussian curve in As profile. The denuded region produced after thermal treatments reduces the oxygen content and creates less 1°(Si) during SPE. So the Gaussian-Chebyshev polynomial distribution was obtained. From the above study, we believe the Gaussian profile can be obtained by controlling RTA conditions This Gaussian-like profile can also suppress hot electron effects by its smooth gradient (generating small electric field) near drain and large overlap under spacer (making large electric field away from gate). So we fabricated rapid thermal annealing singlediffusion drain n-MOSFET. The reduction of hot electron effects was studied, too.

Measurement and Control of a Straightening Process for Seamless Pipes

1993 ◽  
Vol 115 (3) ◽  
pp. 347-351 ◽  
Author(s):  
T. Katoh ◽  
E. Urata
Keyword(s):  
Sum Of Squares ◽  
Curing Process ◽  
Reactive Force ◽  
On Line ◽  
Series Of Experiments ◽  
Reference Pressure ◽  
And Control ◽  
Measurement And Control

This paper deals with an automatic curing process for out-of-straightness of terminal ends of seamless pipes. The developed curing process is composed of a measuring stage and a controlling stage. In the measuring stage, the out-of-straightness pattern of each pipe is measured automatically, then reference pressure points and press strokes are determined to minimize the sum of squares of deflection angles. In the controlling stage, elastic springback of the pipe is predicted by an observer using the calculated press stroke, on-line measured values of reactive force, and deflection of the pipe. Through a series of experiments, the validity of the proposed process was verified.

Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bojun Zhang ◽  
Dennis M. Maher ◽  
Mark S. Denker ◽  
Mark A. Ray
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Depth Profiling ◽  
Gate Oxide ◽  
Annealing Condition ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Gate Oxides ◽  
Diffusion Behavior ◽  
Polysilicon Gate

ABSTRACTWe report a systematic study of dopant diffusion behavior for thin gate oxides and polysilicon implanted gate structures. Boron behavior is emphasized and its behavior is compared to that of As+ and BF2+. Dopant activation is achieved by rapid thermal annealing. Test structures with 100 Å, 60 Å and 30 Å gate oxides and ion implanted polysilicon gate electrodes were fabricated and characterized after annealing by SIMS, SEM, TEM, and C-V rpeasurements. For arsenic implanted structures, no dopant diffusion through a gate oxide of 30 Å thickness and an annealing condition as high as 1 100*C/1Os was observed. For boron implanted structures, as indicated by SIMS depth profiling, structures annealed at 1000*C/10s exhibit a so-called critical condition for boron diffusion through a 30 Å gate oxide. Boron dopant penetration is clearly observed for 60 Å gate oxides at an annealing condition of 1050 0C/10s. The flatband voltage shift can be as high as 0.56 volts as indicated by C-V measurements for boron penetrated gate oxides. However, 100 Å gate oxides are good diffusion barriers for boron at an annealing condition of 1100°C/10s. For BF2 implanted structures, the diffusion behavior is consistent with behavior reported in the literature.

Smart Temperature Sensors

2019 ◽  
pp. 223-250
Author(s):  
Ashraf A. Zaher
Keyword(s):  
Weather Forecast ◽  
Temperature Sensors ◽  
Consumer Electronics ◽  
Data Logging ◽  
Industrial Processing ◽  
Wide Range ◽  
Scada Systems ◽  
New Generation ◽  
And Control ◽  
Measurement And Control

Many real-world applications depend on temperature sensing and/or control. This includes a wide range of industrial processes, chemical reactors, and SCADA systems, in addition to other physical, mechanical, and biological systems. With the advancement of technology, it became possible to produce a new generation of smart and compact temperature sensors, which are capable of providing digital outputs that are more accurate, robust, and easily interfaced and integrated into measurement and control systems. This chapter first surveys traditional analog temperature sensors, such as RTDs and thermocouples, to provide a strong motivation for the need to adopt better and smarter techniques that mainly rely on digital technology (e.g., CMOS designs). Different interfacing techniques that do not need ADCs are introduced, including the programmable Arduino microcontrollers. Different applications will be explored that include automotive accessories, weather forecast, healthcare, industrial processing, firefighting, and consumer electronics. Both wired and wireless technologies, including the IoT, will be investigated as means for transmitting the sensed data for further processing and data logging. A special case study to provide information redundancy in industrial SCADA systems will be analyzed to illustrate the advantages and limitations of smart temperature sensors. The chapter concludes with a summary of the design effort, accuracy, performance, and cost effectiveness of smart temperature sensors while highlighting future trends in this field for different applications.

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

scholarly journals Design and Simulation of a Wireless SAW–Pirani Sensor with Extended Range and Sensitivity

Sensors ◽  
2019 ◽  
Vol 19 (10) ◽  
pp. 2421 ◽  
Author(s):  
Sofia Toto ◽  
Pascal Nicolay ◽  
Gian Luca Morini ◽  
Michael Rapp ◽  
Jan G. Korvink ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
High Vacuum ◽  
Industrial Processes ◽  
Extended Range ◽  
Vacuum Sensor ◽  
Gas Kinetic Theory ◽  
And Control ◽  
Measurement And Control

Pressure is a critical parameter for a large number of industrial processes. The vacuum industry relies on accurate pressure measurement and control. A new compact wireless vacuum sensor was designed and simulated and is presented in this publication. The sensor combines the Pirani principle and Surface Acoustic Waves, and it extends the vacuum sensed range to between 10−4 Pa and 105 Pa all along a complete wireless operation. A thermal analysis was performed based on gas kinetic theory, aiming to optimize the thermal conductivity and the Knudsen regime of the device. Theoretical analysis and simulation allowed designing the structure of the sensor and its dimensions to ensure the highest sensitivity through the whole sensing range and to build a model that simulates the behavior of the sensor under vacuum. A completely new design and a model simulating the behavior of the sensor from high vacuum to atmospheric pressure were established.

Epitaxial Growth of Near Noble Silicides on (111)Si by Rapid Thermal Annealing

1986 ◽  
Vol 74 ◽  
Author(s):  
H. C. Cheng ◽  
I. C. Wu ◽  
L. J. Chen
Keyword(s):  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Furnace Annealing ◽  
Transmission Electron ◽  
Vacuum Method ◽  
Comparable Quality

AbstractThe epitaxial growth of near noble silicides, including CoSi2, NiSi2, FeSi2, Pd2 Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi2 on (111)Si. The best NiSi2, FeSi2, Pd2 Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.

X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials

2012 ◽  
Vol 195 ◽  
pp. 274-276 ◽  
Author(s):  
Philipp Hönicke ◽  
Matthias Müller ◽  
Burkhard Beckhoff
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Measurement Techniques ◽  
Depth Profiling ◽  
Low Energy ◽  
Semiconductor Materials ◽  
Leakage Currents ◽  
X Ray ◽  
20 Nm

The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.

Sign in / Sign up

Export Citation Format

Share Document