Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior

1998 ◽  
Vol 537 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
J. Jasinski ◽  
J. Kozubowski ◽  
A. Barcz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Secondary Ion Mass Spectrometry ◽  
Structural Transformations ◽  
Thermally Activated ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Dopant Atoms ◽  
Ohmic Contact Formation ◽  
Secondary Ion

AbstractStructural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation

scholarly journals Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior

1999 ◽  
Vol 4 (S1) ◽  
pp. 864-869
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
J. Jasinski ◽  
J. Kozubowski ◽  
A. Barcz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Secondary Ion Mass Spectrometry ◽  
Structural Transformations ◽  
Thermally Activated ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Dopant Atoms ◽  
Ohmic Contact Formation ◽  
Secondary Ion

Structural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reaction between Ni and Si, and decomposition of the initially formed interfacial Ni:Ga:N layer. Transport of dopant atoms from metallization into GaN testifies in favour of the SPR process of ohmic contact formation

Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

1989 ◽  
Vol 148 ◽  
Author(s):  
E.D. Marshall ◽  
S.S. Lau ◽  
C.J. Palmstrøm ◽  
T. Sands ◽  
C.L. Schwartz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Solid Phase Regrowth ◽  
Ohmic Contact Formation ◽  
Secondary Ion

ABSTRACTAnnealed Ge/Pd/n-GaAs samples utilizing substrates with superlattice marker layers have been analyzed using high resolution backside secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Interfacial compositional and microstructural changes have been correlated with changes in contact resistivity. The onset of good ohmic behavior is correlated with the decomposition of an intermediate epitaxial Pd4(GaAs,Ge2) phase and solid-phase regrowth of Ge-incorporated GaAs followed by growth of a thin Ge epitaxial layer.

scholarly journals Microstructure and Thermal Stability of Transition Metal Nitrides and Borides on GaN

2000 ◽  
Vol 622 ◽  
Author(s):  
Jacek Jasiński ◽  
Eliana Kamińska ◽  
Anna Piotrowska ◽  
Adam Barcz ◽  
Marcin Zieliński
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Thermal Stability ◽  
Contact Structure ◽  
Secondary Ion Mass Spectrometry ◽  
Metal Nitrides ◽  
Transition Metal Nitrides ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Thermal Stability Of

ABSTRACTMicrostructure and thermal stability of ZrN/ZrB2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 1100°C in N2 atmosphere does not lead to any observable metal/semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB2 metallization at 800°C, when the heat treatment is performed in O2 ambient has been observed.

Microstructure and Electrical Properties of Zinc Films on InP

1995 ◽  
Vol 403 ◽  
Author(s):  
E. Kamiinska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
S. Kasjaniuk ◽  
E. Mizera ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Secondary Ion Mass Spectrometry ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched ◽  
Inp Surface

AbstractThe interactions between thin films of Zn and (100)InP were analysed with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition, and to form an ohmic contact when deposited on n-type InP. Under heat treatment Zn protrudes into InP, and beneath Zn/InP interface a tetragonal Zn3P2 phase lattice matched to InP grows.

Mn Implantation for New Applications of 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 221-224 ◽  
Author(s):  
Margareta K. Linnarsson ◽  
Jennifer Wong-Leung ◽  
Anders Hallén ◽  
S.I. Khartsev ◽  
A.M. Grishin
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Near Infrared ◽  
Secondary Ion Mass Spectrometry ◽  
Stacking Faults ◽  
Structural Disorder ◽  
High Dose ◽  
Transmission Electron ◽  
New Applications ◽  
Secondary Ion

Structural disorder and lattice recovery of high dose, manganese implanted, semi-insulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 °C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in the [11 3] compared to the [0001] channel direction. Stacking faults, voids and 3C inclusions are observed in the implanted region. A Mn containing phase has most likely formed.

scholarly journals In Situ Correlative Microscopy Combining Transmission Electron Microscopy and Secondary Ion Mass Spectrometry

2018 ◽  
Vol 24 (S1) ◽  
pp. 380-381 ◽  
Author(s):  
Santhana Eswara ◽  
Lluis Yedra ◽  
Alisa Pshenova ◽  
Varun Sarbada ◽  
Jean-Nicolas Audinot ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Correlative Microscopy ◽  
Transmission Electron ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

scholarly journals Изменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ

2019 ◽  
Vol 53 (3) ◽  
pp. 332
Author(s):  
В.В. Привезенцев ◽  
В.С. Куликаускас ◽  
В.А. Скуратов ◽  
О.С. Зилова ◽  
А.А. Бурмистров ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Cross Section ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Transmission Electron ◽  
Oxide Phases ◽  
Secondary Ion ◽  
Surface Pores ◽  
Scanning Electron

AbstractSingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

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