Two Step O2/N2O Plasma Annealing for the Reduction of Leakage Current in Amorphous Ta2O5 Films

1999 ◽  
Vol 567 ◽  
Author(s):  
W.S. Lau ◽  
M.T. Chandima Perera ◽  
T. Han ◽  
N. P. Sandler ◽  
C.H. Tung ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Leakage Current ◽  
Tantalum Pentoxide ◽  
High Temperature Annealing ◽  
Voltage Range ◽  
Annealing Step ◽  
Current Reduction ◽  
Plasma Annealing

ABSTRACTAs deposited tantalum pentoxide (Ta2O5) films are amorphous. The films will remain amorphous after O2 or N2O plasma annealing at low temperature. High temperature annealing will produce polycrystalline films where grain boundaries can generate leakage current. Previously, we have shown that N2O plasma annealing is superior to O2 plasma annealing in terms of leakage current reduction for AI/Ta2O5/Si capacitors. However, for TiN/Ta2O5/Si capacitors, the leakage current tends to be higher at low bias voltage for N2O plasma annealing compared to O2 plasma annealing. By adding an 02 plasma annealing step and then comparing TiN/Ta2O5/Si capacitors with two step O2/N2O plasma annealing with respect to similar structures with two step O2/O2 plasma annealing, it can be easily seen that TiN/Ta2O5/Si capacitors with two step O2/N2O plasma annealing have lower leakage current compared to similar structures with two step O2/O2 plasma annealing throughtout the voltage range tested.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Suppression of Leakage Current of Deposited SiO2 with Bandgap Increasing by High Temperature Annealing

2019 ◽  
Vol 19 (2) ◽  
pp. 403-413 ◽  
Author(s):  
Mitsuru Sometani ◽  
Ryu Hasunuma ◽  
Masaaki Ogino ◽  
Hitoshi Kuribayashi ◽  
Yoshiyuki Sugahara ◽  
...  
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
High Temperature Annealing

Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO2 and High-k Dielectrics

2010 ◽  
Vol 1252 ◽  
Author(s):  
Sahar Sahhaf ◽  
Robin Degraeve ◽  
Mohammed Zahid ◽  
Guido Groeseneken
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Charge Injection ◽  
Constant Voltage ◽  
High K ◽  
Voltage Stress ◽  
Stress Induced Leakage Current ◽  
High K Dielectric

AbstractIn this work, the effect of elevated temperature on the generated defects with constant voltage stress (CVS) in SiO2 and SiO2/HfSiO stacks is investigated. Applying Trap Spectroscopy by Charge Injection and Sensing (TSCIS) to 6.5 nm SiO2 layers, different kinds of generated traps are profiled at low and high temperature. Also the Stress-Induced Leakage Current (SILC) spectrum of high-k dielectric stack is different at elevated temperature indicating that degradation and breakdown at high temperature is not equivalent to that at low temperature and therefore, extrapolation of data from high to low T or vice versa is challenging.

scholarly journals Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

2019 ◽  
Vol 10 ◽  
pp. 1125-1130 ◽  
Author(s):  
Dapeng Wang ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Temperature Treatment ◽  
Treatment Temperature ◽  
Negative Bias ◽  
Indium Gallium Zinc Oxide ◽  
Negative Bias Illumination Stress

This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature treatment maintains a high density of defects in the IGZO bulk, whereas high-temperature annealing causes a quality degradation of the adjacent interfaces. Light of short wavelengths below 460 nm induces defect generation in the forward measurement and the leakage current increases in the reverse measurement, especially for the low-temperature-annealed device. The hysteresis after negative-bias-illumination-stress (NBIS) is quantitatively investigated by using the double-scan mode and a positive gate pulse. Despite the abnormal transfer properties in the low-temperature-treated device, the excited holes are identically trapped at the front interface irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT.

Advantages of MIS Processing on Passivated Polycrystalline Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
G. Rajeswaran ◽  
M. Thayer ◽  
V. J. Rao ◽  
W. A. Anderson
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Hydrogen Plasma ◽  
Mis Structures

ABSTRACTWacker polycrystalline silicon shows enhanced grain boundary activity after a high temperature (950° C) anneal. It is possible to passivate this effect in a hydrogen plasma. The low temperature (600° C) processing of MIS technology does not activate grain boundaries or deteriorate a passivated specimen. Activated grain boundaries with MIS structures can be used to assess the character of recombination currents. It is concluded that MIS processing is advantageous for passivated polycrystalline silicon.

Effect of Low-Temperature Recovery Treatments on Subsequent Recrystallization in Al-2.5%Mg

2007 ◽  
Vol 550 ◽  
pp. 381-386 ◽  
Author(s):  
B. Decreus ◽  
Hatem S. Zurob ◽  
John Dunlop ◽  
Yves Bréchet
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Hardness Measurement ◽  
Optical Metallography ◽  
Mg Alloys ◽  
High Temperature Annealing ◽  
Recrystallization Kinetics ◽  
Temperature Recovery ◽  
Kinetics Of ◽  
And Calorimetry

The effect of low temperature recovery treatments on the recrystallization kinetics during subsequent high temperature annealing was investigated in three Al-2.5%Mg alloys with various Fe additions. Recovery treatments were carried out at 190oC for times ranging from 0.25 to 65 hrs. Recrystallization treatments were carried out at 280oC. The kinetics of recrystallization was followed using the techniques of hardness measurement, optical metallography and calorimetry.

scholarly journals Effect of Holding Time of Decarbonization Annealing on Recrystallization in Fe-3.2%Si-0.047Nb% Low-Temperature Oriented Silicon Steel

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1209
Author(s):  
Xin Tian ◽  
Shuang Kuang ◽  
Jie Li ◽  
Shuai Liu ◽  
Yunli Feng
Keyword(s):  
Magnetic Properties ◽  
High Temperature ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Annealing Time ◽  
High Energy ◽  
Primary Recrystallization ◽  
Silicon Steel ◽  
Annealing Condition ◽  
Goss Texture

In this study, the effects of decarburization annealing time on the primary recrystallization microstructure, the texture and the magnetic properties of the final product of 0.047% Nb low-temperature grain-oriented silicon steel were investigated by means of OM, EBSD and XRD. The results show that when the decarburization annealing condition is 850 °C for 5 min, the uniform fine primary recrystallization microstructure can be obtained, and the content of favorable texture {111} < 112 > is the highest while that of unfavorable texture {110} < 112 > is the lowest, which is mostly distributed near the central layer. At the same time, there are the most high-energy grain boundaries with high mobility in the primary recrystallization microstructure of the sample annealed at 850 °C for 5 min, and the ∑9 boundary has the highest percentage of grain boundaries. The samples with different decarburization annealing time were annealed at high temperature. It was found that perfect secondary recrystallization occurred after high-temperature annealing when the decarburization annealing condition was 850 °C for 5 min. The texture component was characterized by a single Goss texture, and the size of the Goss grain reached 4.6mm. Under such annealing conditions, the sample obtained shows the optimal soft magnetic properties of B800 = 1.89T and P1.7/50 = 1.33 w/kg.

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