scholarly journals Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

2016 ◽  
Vol 7 ◽  
pp. 1461-1470 ◽  
Author(s):  
Siti Noorhaniah Yusoh ◽  
Khatijah Aisha Yaacob
Keyword(s):  
Surface Roughness ◽  
Silicon Nanowires ◽  
Isopropyl Alcohol ◽  
Etching Rate ◽  
Wet Etching ◽  
Tetramethylammonium Hydroxide ◽  
Etching Time ◽  
Etching Depth ◽  
Force Microscopy ◽  
Afm Lithography

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were investigated. The relationships between etching depth and width, and etching rate and surface roughness of silicon nanowires were characterized in detail using atomic force microscopy (AFM). The obtained results indicate that increased IPA concentration in TMAH produced greater width of the silicon nanowires with a smooth surface. It was also observed that the use of a longer etching time causes more unmasked silicon layers to be removed. Importantly, throughout this study, wet etching with optimized parameters can be applied in the design of the devices with excellent performance for many applications.

Effect of Surface Chemistry on Ruthenium Wet Etching

2021 ◽  
Vol 314 ◽  
pp. 302-306
Author(s):  
Quoc Toan Le ◽  
E. Kesters ◽  
M. Doms ◽  
Efrain Altamirano Sánchez
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Wet Etching ◽  
X Ray ◽  
Force Microscopy ◽  
Metal Free ◽  
Atomic Force ◽  
Different Types ◽  
Effect Of Surface

Different types of ALD Ru films, including as-deposited, annealed Ru, without and with a subsequent CMP step, were used for wet etching study. With respect to the as-deposited Ru, the etching rate of the annealed Ru film in metal-free chemical mixtures (pH = 7-9) was found to decrease substantially. X-ray photoelectron spectroscopy characterization indicated that this behavior could be explained by the presence of the formation of RuOx (x = 2,3) caused by the anneal. A short CMP step applied to the annealed Ru wafer removed the surface RuOx, at least partially, resulting in a significant increase of the etching rate. The change in surface roughness was quantified using atomic force microscopy.

Study on sapphire microstructure processing technology based on wet etching

2017 ◽  
Vol 31 (07) ◽  
pp. 1741004 ◽  
Author(s):  
Ying-Qi Shang ◽  
Hong Qi ◽  
Yun-Long Ma ◽  
Ya-Lin Wu ◽  
Yan Zhang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Process Parameters ◽  
Etching Rate ◽  
Wet Etching ◽  
Processing Technology ◽  
Light Extraction Efficiency ◽  
Etching Time ◽  
Etching Solution ◽  
Sapphire Surface ◽  
Optical Pressure

Aiming at the problem that sapphire surface roughness is quite large after wet etching in sapphire microstructure processing technology, we optimize the wet etching process parameters, study on the influences of concentration and temperature of etching solution and etching time on the sapphire surface roughness and etching rate, choose different process parameters for the experiment and test and analyze the sapphire results after wet etching. Aiming at test results, we also optimize the process parameters and do experiment. Experimental results show that, after optimizing the parameters of etching solution, surface roughness of etched sapphire is 0.39 nm, effectively with reduced surface roughness, improved light extraction efficiency and meeting the production requirements of high-precision optical pressure sensor.

scholarly journals A Facile, Low-Cost Plasma Etching Method for Achieving Size Controlled Non-Close-Packed Monolayer Arrays of Polystyrene Nano-Spheres

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 605 ◽  
Author(s):  
Yun Chen ◽  
Dachuang Shi ◽  
Yanhui Chen ◽  
Xun Chen ◽  
Jian Gao ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Silicon Nanowires ◽  
High Frequency ◽  
Low Cost ◽  
Etching Rate ◽  
Low Frequency ◽  
Etching Time ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Etching System

Monolayer nano-sphere arrays attract great research interest as they can be used as templates to fabricate various nano-structures. Plasma etching, and in particular high-frequency plasma etching, is the most commonly used method to obtain non-close-packed monolayer arrays. However, the method is still limited in terms of cost and efficiency. In this study, we demonstrate that a low frequency (40 kHz) plasma etching system can be used to fabricate non-close-packed monolayer arrays of polystyrene (PS) nano-spheres with smooth surfaces and that the etching rate is nearly doubled compared to that of the high-frequency systems. The study reveals that the low-frequency plasma etching process is dominated by a thermal evaporation etching mechanism, which is different from the atom-scale dissociation mechanism that underlines the high-frequency plasma etching. It is found that the polystyrene nano-sphere size can be precisely controlled by either adjusting the etching time or power. Through introducing oxygen as the assisting gas in the low frequency plasma etching system, we achieved a coalesced polystyrene nano-sphere array and used it as a template for metal-assisted chemical etching. We demonstrate that the method can significantly improve the aspect ratio of the silicon nanowires to over 200 due to the improved flexure rigidity.

Surface Structuring of α/β-Sialon Ceramics by Plasma-Etching

2008 ◽  
Vol 403 ◽  
pp. 99-102
Author(s):  
Marco Riva ◽  
Rainer Oberacker ◽  
Michael J. Hoffmann ◽  
Carlos Ziebert
Keyword(s):  
Plasma Etching ◽  
Glassy Phase ◽  
Etching Rate ◽  
Etching Time ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Complementary Techniques ◽  
Reactive Gas

Effects of plasma etching on mixed /-sialon ceramics with different /-ratiowere investigated. A mix of CF4/O2 in a ratio of 2:1 was chosen as reactive gas. Parameters such as etching time and the material composition were examined. It was shown that -grains exhibit a larger etching rate than the grain boundary glassy phase or the -grains, generating pockets in a range of few µm. The so created surfaces were characterized both by scanning electron microscopy (SEM) and by atomic force microscopy (AFM) in contact mode. These complementary techniques also enabled the determination of the bearing ratio.

Effect of Acid Etching on Surface Chemistry and Microstructure of HA and CMP Grit-Blasted Ti Surface

2006 ◽  
Vol 309-311 ◽  
pp. 391-394
Author(s):  
A.W. Haryadi ◽  
Chang Kuk You ◽  
Shin Yoon Kim ◽  
Eui Kyun Park ◽  
Kyo Han Kim ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Chemistry ◽  
Dental Implants ◽  
Acid Concentration ◽  
Etching Rate ◽  
Acid Etching ◽  
Etching Time ◽  
Etching Solution ◽  
Grit Blasting

Grit blasting using bioactive HA and biodegradable CMP followed by acid etching has been done. HNO3 and H3PO4 were used for the etching solution by controlling the concentration and etching time to know the effect on the surface chemistry and morphology of the Ti implant. Characterization of samples was done by using SEM, EDX and surface profilometer. The contents of residues on Ti surface decreased with increasing acid concentration and etching time. It was observed that the acidic etching rate of HA grits on Ti surface was faster than that of CMP grits. And HNO3 etched more rapidly the HA and CMP grits on Ti surface, compared to H3PO4. Therefore, the surface roughness of dental implants can be controlled by having appropriate combination of acid concentration and etching time.

Analysis of Si Wet Etching Effect on Wafer Edge

2016 ◽  
Vol 255 ◽  
pp. 97-101
Author(s):  
Suguru Saito ◽  
Atsushi Okuyama ◽  
Kenji Takeo ◽  
Yoshiya Hagimoto ◽  
Hayato Iwamoto
Keyword(s):  
Fluid Velocity ◽  
Etching Rate ◽  
Wet Etching ◽  
Convex Shape ◽  
Force Microscopy ◽  
Atomic Force ◽  
Detailed Evaluation ◽  
Microscopy Analysis ◽  
Vertical Step ◽  
Wafer Edge

We investigated the effect of Si wet etching on the vertical step at wafer edge. We found that the concave-convex shape appeared at the wafer edge after Si etching by the Atomic Force Microscopy analysis. From the liquid simulation and the detailed evaluation of Si etching rate, we revealed that the concave-convex shape was formed by the distribution of the fluid velocity at the wafer edge.

Corrosion Inhibiting Effect on Copper Chemical Mechanical Planarization (CMP) in Fe(NO3)3 Based Slurries

2005 ◽  
Vol 291-292 ◽  
pp. 395-400
Author(s):  
Dong Ming Guo ◽  
X.J. Li ◽  
Zhu Ji Jin ◽  
Ren Ke Kang
Keyword(s):  
Surface Roughness ◽  
Large Scale ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Etching Rate ◽  
Copper Surface ◽  
Force Microscopy ◽  
Composition Modification ◽  
Planarization Process ◽  
Analysis System

The slurry of Copper chemical mechanical planarization for ultra large-scale integrate circuit (ULSI) usually contains oxidizer, etchant, complexing reagent and corrosive inhibitor. In planarization process, the corrosive inhibitor has an important effect on the planarization. Only if the concave surface of the wafer is properly protected from corrosion by the inhibitor, the process can obtain perfect surface planarity. In this paper, with Fe(NO3)3 as an oxidant and several corrosive inhibitors selected, the corrosive efficiency of slurries are investigated. The static etching rate and the polishing material removal rate of wafer are obtained. The electrochemical behavior of the slurry is investigated by the potentiodynamic polarization studies. And the inhibitive efficiency of the related corrosive inhibitors is calculated from the polarization data. X-ray diffraction is applied to analyze the composition modification of the copper surface. Atom force microscopy is applied to measure the surface topography of corrosive copper wafer and the value of surface roughness is measured by ZYGO surface analysis system. The result shows that the benzotriazole (BTA) is a perfect corrosive inhibitor. With addition of 0.1wt% BTA into 1.5wt% Fe(NO3)3 solution, the inhibitive efficiency can reach 99.1%. The polishing test shows that if only 1.5wt% Fe(NO3)3 is added as an oxidizer without any other additive, the surface roughness of the polished wafer is 26.9Å, while with 0.1wt%BTA added in the meantime, 5.2 Å of surface roughness can be obtained.

scholarly journals Optimization of KOH etching process for MEMS square diaphragm using response surface method

2019 ◽  
Vol 15 (1) ◽  
pp. 113 ◽  
Author(s):  
Norliana Yusof ◽  
Badariah Bais ◽  
Burhanuddin Yeop Majlis ◽  
Norhayati Soin ◽  
Jumril Yunas
Keyword(s):  
Response Surface ◽  
Response Surface Method ◽  
Process Parameters ◽  
Numerical Study ◽  
Etching Rate ◽  
Wet Etching ◽  
Etching Process ◽  
Etching Time ◽  
Surface Method ◽  
Koh Etching

<em><span>KOH wet etching is widely used in realizing MEMS diaphragm due to its low cost, safe and easy handling. However, wet etching process parameters need to be studied thoroughly in order to realize the desired shape and size of MEMS devices. This paper presents the numerical study and optimization of KOH etching process parameters using the response surface method (RSM). Face central composite design (FCC) of RSM was employed as the experimental design to analyze the result and generate a mathematical prediction model. From the analysis, the temperature was identified as the most significant process parameter that affects the etching rate, thus affecting the thickness and size of the diaphragm. The results of RSM prediction for optimization were applied in this study. Particularly, 45% of KOH concentration, temperature of 80°C, 1735 µm2 of mask size, and 7.2 hours of etching time were implemented to obtain a square MEMS diaphragm with thickness of 120 µm and size of 1200 µm2. The results of RSM based optimization method for KOH wet etching offers a quick and effective method for realizing a desired MEMS device.</span></em>

scholarly journals Effect of Hydrofluoric Acid Surface Treatments on Surface Roughness and Three-Point Flexural Strength of Suprinity Ceramic

2020 ◽  
Author(s):  
Nazanin Keshmiri ◽  
Homayoon Alaghehmand ◽  
Faraneh Mokhtarpour
Keyword(s):  
Surface Roughness ◽  
Flexural Strength ◽  
Hydrofluoric Acid ◽  
Testing Machine ◽  
Etching Time ◽  
Control Group ◽  
Force Microscopy ◽  
Atomic Force ◽  
Significant Difference ◽  
Before And After

Objectives: This study aimed to evaluate the effects of hydrofluoric acid (HF) concentration and etching time on the surface roughness (SR) and three-point flexural strength of Suprinity and to analyze the surface elements before and after etching. Materials and Methods: To measure the SR, 70 specimens of Suprinity (2×4×5mm3) were assigned to seven groups (n=10). Six groups were etched for 20, 60, and 120 seconds with 5% and 10% HF and 7th group was the control group. Specimens were evaluated using atomic force microscopy (AFM). One specimen from each group was used to analyze the surface elements using scanning electron microscopy (SEM). For measuring the three-point flexural strength, 60 specimens were divided into six groups (n=10) and etched as previously described. The flexural strength was measured using a universal testing machine. T-test, one-way analysis of variance (ANOVA), and two-way ANOVA were used for statistical analyses (P<0.05). Results: The 10% concentration of HF caused higher SR compared to the 5% HF. The effect of HF concentration on the flexural strength was significantly different in the 20- and 60-second etching groups. Different etching times had no significantly different effect on the SR. With 5% HF, the flexural strength was significantly higher for 20-second etching time than for the etching times of 60 and 120 seconds. With 10% HF, there was a significant difference in flexural strength between etching times of 20 and 120 seconds. The atomic percentage (at%) of silica was enhanced by increasing the etching time. Conclusions: The best surface etching protocol comprises 10% HF used for 20 seconds.

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