Technique of surface control with the Electrolyzed D.I.water for post CMP cleaning

2000 ◽  
Vol 612 ◽  
Author(s):  
Mitsuhiko Shirakashi ◽  
Kenya Itoh ◽  
Ichiro Katakabe ◽  
Masayuki Kamezawa ◽  
Sachiko Kihara ◽  
...  
Keyword(s):  
Metal Surface ◽  
Chemical Mechanical Planarization ◽  
Surface Condition ◽  
Mechanical Damage ◽  
Dielectric Materials ◽  
Barrier Materials ◽  
Surface Control ◽  
And Control

AbstractChemical mechanical planarization (CMP) has been widely used for planarization of ILD, STI, plug and wiring processes. In post metal CMP cleaning processes, there are still many problems to be solved. There are several surfaces of materials, such as wiring materials, barrier materials, dielectric materials etc., on the wafer that must be cleaned at the same time,. It is also important to clean these different surfaces without any chemical or mechanical damage. We have confirmed that the Electrolyzed D.I.water is effective in post CMP cleaning for controlling the surface condition during cleaning and leaving a robust surface after CMP. We describe the Electrolyzed D.I.water system and present some results on the cleaning capability and control of the metal surface for application to cleaning after a metal CMP process.

Technique of surface control with the Electrolyzed D.I.water for post CMP cleaning

2000 ◽  
Vol 613 ◽  
Author(s):  
Mitsuhiko Shirakashi ◽  
Kenya Itoh ◽  
Ichiro Katakabe ◽  
Masayuki Kamezawa ◽  
Sachiko Kihara ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Surface Condition ◽  
Dielectric Materials ◽  
Barrier Materials ◽  
Surface Control ◽  
Metal Materials ◽  
Cu Cmp

ABSTRACTChemical mechanical planarization (CMP) has been widely used for planarization of ILD, STI, plug and wiring processes. Wafer has several surfaces of materials, such as wiring materials, barrier materials, dielectric materials etc., that must be cleaned at the same time. In post metal CMP cleaning processes, in addition to cleaning several surfaces, it is very important that the oxidization level of metal materials, such as wiring, is held and controlled to maintain its resistance. Especially copper, that is began to use for wiring, is very easy to be oxidized. We have confirmed that the Electrolyzed D.I.water is effective in post Cu CMP cleaning for controlling the surface condition of Cu during cleaning and leaving a robust surface after CMP. We describe the Electrolyzed D.I.water system and present some result of analysis of Cu surface by treated with the Electrolyzed D.I.water.

Effect of Mechanical Damages and Storage Conditions on Quality of Markies cv. Potatoes for Processing

2019 ◽  
pp. 1-5
Author(s):  
Dreice Nascimento Gonçalves ◽  
Luciana Gomes Soares ◽  
Ariana Mota Pereira ◽  
Paula Acácia Silva Ramos ◽  
Maria Eduarda Da Silva Guimarães ◽  
...  
Keyword(s):  
Soluble Sugar ◽  
Mechanical Damage ◽  
Storage Conditions ◽  
Reducing Sugar ◽  
Control Treatment ◽  
Experimental Unit ◽  
Total Soluble Sugar ◽  
And Control ◽  
And Storage

Aims: Evaluate whether mechanical damage and storage conditions affect the quality of the ‘Markies’ potato for processing. Study Design: The experimental design was the completely randomized, in the scheme of split-plots. The plots were composed of treatments with and without mechanical damage and the subplots were made up by the evaluation times, with 5 replicates, where the experimental unit was composed of 2 tubers. Place and Duration of Study: Tubers of the ‘Markies’ cultivar from the producing region of Perdizes, State of Minas Gerais, were planted in June 2016 and harvested in October 2016. Methodology: The tubers were stored for 2 months at 8°C, and further divided into treatment with damage, in which the tubers were subjected to impact and abrasion; and control treatment, in which the tubers were not damaged. After that, they were stored at 28°C and evaluated for their loss of loss of accumulated fresh mass (FML), total soluble sugar (TSS), reducing sugar (RS), non-reducing sugar (NRS) and color after frying in the periods of 0, 12, 24, 36 and 48 h after being placed at room temperature. Results: The mechanical damage in the tubers increased FML, however, it did not affect the content of TSS, NRS, RS and color after frying. Increases were observed in the content of TSS and NRS after 12 h of evaluation. Grade 2 was assigned to the coloring scale after frying for the tubers regardless of treatment or evaluation period. Conclusion: Mechanical damage increases the FML and the ‘Markies’ cultivar is suitable for the industry of pre-fried potato processing even under the occurrence of mechanical damage and exposure to high temperatures.

scholarly journals Environmental function and control of heno motita (Tillandsia recurvata) in the atmospheric basin of Tula de Allende Hidalgo

2021 ◽  
pp. 19-30
Author(s):  
Marisol RESÉNDIZ-VEGA ◽  
Gabriela SÁNCHEZ-TRUJILLO
Keyword(s):  
Heavy Metals ◽  
Acetic Acid ◽  
Sodium Bicarbonate ◽  
Mechanical Damage ◽  
Management Program ◽  
The Other ◽  
Environmental Function ◽  
And Control ◽  
Allelopathic Substance ◽  
Specific Management

The purpose of this article is to make a proposal for the control of heno motita (Tillandsia recurvata), based on the analysis of its environmental function within the atmospheric basin of Tula, to contribute to the solution of a state forest problem. Its approach is quantitative experimental since it seeks to explain how the application of 5% acetic acid and 80g / l sodium bicarbonate affects the emergence of new shoots and the Hay Motita plant directly, as well as to identify the function that said plant fulfills. within the microenvironment. The findings show that heno motita is a plant that seeks a support to capture nutrients from the air, however, shading causes the host plant to decrease its efficiency in capturing energy, likewise there is mechanical damage due to its weight and a chemical one since it secretes an allelopathic substance that damages the new shoots. On the other hand, Tillandsia recurvata "sequesters" particles of different materials such as heavy metals in its trichomes, thus contributing to the sanitation of the atmosphere. Finally, the steps to follow to develop a specific management program are proposed.

Effect of Complex Agent on Copper Dissolution in Alkaline Slurry for Chemical Mechanical Planarization

2012 ◽  
Vol 455-456 ◽  
pp. 1145-1148
Author(s):  
Yan Gang He ◽  
Jia Xi Wang ◽  
Xiao Wei Gan ◽  
Wei Juan Li ◽  
Yu Ling Liu
Keyword(s):  
Surface Roughness ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Dielectric Materials ◽  
Mechanism Analysis ◽  
Copper Dissolution ◽  
Complex Agent ◽  
High Removal Rate ◽  
Rc Delay ◽  
Low K

With the microelectronic technology node moves down to 45 nm and beyond, and to reduce the RC delay time, low-k dielectric materials have been used to replace regular dielectric materials. Therefore, the down force of chemical mechanical planarization (CMP) needs to decrease based on the characteristics of low-k materials: low mechanical strength. In this study, the effect of new complex agent on copper dissolution in alkaline slurry for CMP was investigated. Based on the reaction mechanism analysis of Cu in alkaline slurry in CMP, the performance of Cu removal rate and surface roughness condition were discussed. It has been confirmed that Cu1 slurry demonstrates a relatively high removal rate with low down force. And also, by utilizing the Cu1 slurry, good result of Cu surface roughness were obtained.

Development of 2.5D and 3D IC Fabrication and Assembly Technologies

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000075-000108
Author(s):  
Guilian Gao ◽  
Hong Sheng ◽  
Sangil Lee ◽  
Bong-Sub Lee ◽  
Scott McGrath ◽  
...  
Keyword(s):  
Mechanical Damage ◽  
Dielectric Materials ◽  
Process Yield ◽  
3D Ic ◽  
Soldering Process ◽  
Residue Removal ◽  
Solder Balls ◽  
Similar Materials ◽  
Process Compatibility ◽  
The Impact

2.5D/3D IC assembly is where the traditional foundry and assembly house model breaks down. The greatly reduced feature sizes of microbumps in combination with very large, thin interposers and ICs present many challenges for assembly. With densely integrated packages and stacked thin dies, warpage at various steps of assembly process can lead to die crack, weak or open interconnection, and delamination. Microbump die with copper pillar and solder cap lacks the flexibility of conventional BGA solder balls in warpage compensation. Low temperature dielectric materials for interposer backside passivation lack chemical, thermal stability and mechanical strength compared to similar materials cured at higher temperatures. Ultra- low stand-off between dies creates new challenge for flux residue removal and underfill processing, adhesion and reliability. In this paper, we present learning and results from building two Invensas 2.5D interposer test vehicles with rectangular (19mmx27mm) and square (24mmx24 mm) silicon interposers. Since the industry is still debating where the MEOL processes will take place, these two test vehicles use both assembly centric and fab centric flows. We conducted comprehensive material and process compatibility studies to meet our goal of process capability and product reliability. We explored three different interposer fabrication/ assembly flows that includes copper-to-copper bonding as well as solder capped copper pillar microbumps for microbump die to interposer connection. We optimized the interposer fabrication process to improve interposer quality and warpage. We instituted 100% bump inspection and tight control on microbump die quality and co-planarity to improve assembly yield. We developed robust soldering and cleaning processes to achieve high soldering process yield. We evaluated several methods of flux clean and developed a procedure to achieve optimal flux residue removal without causing mechanical damage to solder joints. We explored vacuum and pressure curing process for underfill and adopted advance underfill cure technology to eliminate voids in underfill. The impact of these factors on assembly yield and reliability will be presented.

Wind-Tunnel Determination of Aeroelastic Response of Piezoelectric and Aileron Controlled 3-D Wing

2000 ◽  
Author(s):  
Afzal Suleman ◽  
Curran A. Crawford ◽  
António P. Costa
Keyword(s):  
Wind Tunnel ◽  
Three Dimensional ◽  
Wind Tunnel Testing ◽  
Aeroelastic Response ◽  
Surface Control ◽  
Control Interface ◽  
Adaptive Wing ◽  
Wing Structure ◽  
And Control

Abstract This paper presents the results of wind tunnel testing performed on a true three dimensional adaptive wing structure. The focus of this study was to test the aeroelastic response and control of a wing built with conventional stressed skins. The aeroelastic performance of the wing using traditional aerodynamic surface control methods is compared to the results obtained using piezoelectric actuators on the skins of the wing. Results are presented for the system identification, free stream vibration and buffeting tests performed in the wind tunnel. The design of the adaptive wing and control interface is discussed in addition to the experimental setup.

Decoherence and Control of Electrons at a Metal Surface

1999 ◽  
pp. 277-280
Author(s):  
S. Ogawa ◽  
H. Nagano ◽  
H. Petek
Keyword(s):  
Metal Surface ◽  
And Control

Metrology Issues in Cu-Low-K Chemical Mechanical Planarization

2002 ◽  
Vol 750 ◽  
Author(s):  
Parshuram B. Zantye ◽  
Arun K. Sikder ◽  
Swetha Thagella ◽  
Nivedita Gulati ◽  
Ashok Kumar
Keyword(s):  
Tribological Properties ◽  
Surface Characterization ◽  
Chemical Mechanical Planarization ◽  
Dielectric Materials ◽  
Successful Implementation ◽  
Post Process ◽  
Damascene Process ◽  
Reduced Modulus ◽  
Materials Used ◽  
Cu Cmp

ABSTRACTUltra low-k materials used in Cu damascene process are inherently soft and weak in nature; hence the evaluation of tribological properties of these materials is an issue of paramount importance in the field of semiconductor fabrication. Chemical Mechanical Polishing (CMP) of these films is a major challenge due to their reduced modulus and cohesive strength. The objective of this research is to develop a strong understanding of the tribological properties of Cu ultra low-k dielectric materials for successful implementation in the semiconductor devices. The Cu ultra low-k systems are polished at different conditions of load and platen rotation and their polishing behavior is compared with the standard Cu-SiO2 system. The polishing behavior of Cu and the barrier Ta material is studied in order to effectively detect the end point of the Cu CMP process. Delamination studies, post process surface characterization using scanning electron microscopy and the reliability issues of these materials also come within the scope of this study.

scholarly journals The influence of boundary films on corrosive action

1927 ◽  
Vol 115 (771) ◽  
pp. 349-372 ◽  
Keyword(s):  
Metal Surface ◽  
Surface Condition ◽  
Pure Metal ◽  
Corrosive Action ◽  
Rapid Formation ◽  
Before And After ◽  
Current Flows ◽  
Boundary Films ◽  
Fresh Surface ◽  
A Current

Now that the electrochemical character of corrosion has been firmly established, it becomes necessary to examine in detail those electrolytic factors which most influence corrosive action in normal waters. It is the purpose of this paper to consider the most important of these factors, namely, the presence of boundary films on the metal formed both before and after contact with the electrolyte. The rapid formation of films of moisture, grease, etc., on a fresh surface exposed to the air has been pointed out by the late Lord Rayleigh. Our knowledge of the properties of these films on metals has been greatly extended by the work of Hardy,§ but their influence on the location of corrosion on a metal surface does not appear to have been investigated. The boundary films formed between the electrodes and the electrolyte as a result of the passage of a current have recently been investigated by Newbery, and it would appear that these films must also have an important influence on corrosive action. It is generally admitted that the rate of corrosion in normal waters is partly dependent on the oxygen supply. But before the metal comes in contact with the electrolyte it may have undergone oxidation, and it seems that the importance of surface condition, and the profound effect it may have on the reactivity of the metal has not hitherto been fully realised, for in many previous researches on corrosion, often insufficient attention has been given to the method of preparing the specimens. The results obtained in this paper appear to indicate that the primary cathode and anode areas on a pure metal are determined largely by the distribution of oxide and other films on the metal surface. When the metal is immersed in an electrolyte the first current flows between these primary areas, but subsequently the location of the cathode and anode areas may be altered, as Evans has shown, by variations in the oxygen concentration, by the spreading of the products of corrosion over the metal surface, and by other factors.

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