Technique of surface control with the Electrolyzed D.I.water for post CMP cleaning

MRS Proceedings ◽

10.1557/proc-613-e8.3.1 ◽

2000 ◽

Vol 613 ◽

Cited By ~ 1

Author(s):

Mitsuhiko Shirakashi ◽

Kenya Itoh ◽

Ichiro Katakabe ◽

Masayuki Kamezawa ◽

Sachiko Kihara ◽

...

Keyword(s):

Chemical Mechanical Planarization ◽

Surface Condition ◽

Dielectric Materials ◽

Barrier Materials ◽

Surface Control ◽

Metal Materials ◽

Cu Cmp

ABSTRACTChemical mechanical planarization (CMP) has been widely used for planarization of ILD, STI, plug and wiring processes. Wafer has several surfaces of materials, such as wiring materials, barrier materials, dielectric materials etc., that must be cleaned at the same time. In post metal CMP cleaning processes, in addition to cleaning several surfaces, it is very important that the oxidization level of metal materials, such as wiring, is held and controlled to maintain its resistance. Especially copper, that is began to use for wiring, is very easy to be oxidized. We have confirmed that the Electrolyzed D.I.water is effective in post Cu CMP cleaning for controlling the surface condition of Cu during cleaning and leaving a robust surface after CMP. We describe the Electrolyzed D.I.water system and present some result of analysis of Cu surface by treated with the Electrolyzed D.I.water.

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Technique of surface control with the Electrolyzed D.I.water for post CMP cleaning

MRS Proceedings ◽

10.1557/proc-612-d11.2.1 ◽

2000 ◽

Vol 612 ◽

Author(s):

Mitsuhiko Shirakashi ◽

Kenya Itoh ◽

Ichiro Katakabe ◽

Masayuki Kamezawa ◽

Sachiko Kihara ◽

...

Keyword(s):

Metal Surface ◽

Chemical Mechanical Planarization ◽

Surface Condition ◽

Mechanical Damage ◽

Dielectric Materials ◽

Barrier Materials ◽

Surface Control ◽

And Control

AbstractChemical mechanical planarization (CMP) has been widely used for planarization of ILD, STI, plug and wiring processes. In post metal CMP cleaning processes, there are still many problems to be solved. There are several surfaces of materials, such as wiring materials, barrier materials, dielectric materials etc., on the wafer that must be cleaned at the same time,. It is also important to clean these different surfaces without any chemical or mechanical damage. We have confirmed that the Electrolyzed D.I.water is effective in post CMP cleaning for controlling the surface condition during cleaning and leaving a robust surface after CMP. We describe the Electrolyzed D.I.water system and present some results on the cleaning capability and control of the metal surface for application to cleaning after a metal CMP process.

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Metrology Issues in Cu-Low-K Chemical Mechanical Planarization

MRS Proceedings ◽

10.1557/proc-750-y9.7 ◽

2002 ◽

Vol 750 ◽

Cited By ~ 1

Author(s):

Parshuram B. Zantye ◽

Arun K. Sikder ◽

Swetha Thagella ◽

Nivedita Gulati ◽

Ashok Kumar

Keyword(s):

Tribological Properties ◽

Surface Characterization ◽

Chemical Mechanical Planarization ◽

Dielectric Materials ◽

Successful Implementation ◽

Post Process ◽

Damascene Process ◽

Reduced Modulus ◽

Materials Used ◽

Cu Cmp

ABSTRACTUltra low-k materials used in Cu damascene process are inherently soft and weak in nature; hence the evaluation of tribological properties of these materials is an issue of paramount importance in the field of semiconductor fabrication. Chemical Mechanical Polishing (CMP) of these films is a major challenge due to their reduced modulus and cohesive strength. The objective of this research is to develop a strong understanding of the tribological properties of Cu ultra low-k dielectric materials for successful implementation in the semiconductor devices. The Cu ultra low-k systems are polished at different conditions of load and platen rotation and their polishing behavior is compared with the standard Cu-SiO2 system. The polishing behavior of Cu and the barrier Ta material is studied in order to effectively detect the end point of the Cu CMP process. Delamination studies, post process surface characterization using scanning electron microscopy and the reliability issues of these materials also come within the scope of this study.

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Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond

10.1016/b978-0-12-821791-7.00016-2 ◽

2022 ◽

pp. 29-50

Author(s):

M. Krishnan ◽

M.F. Lofaro

Keyword(s):

Chemical Mechanical Planarization ◽

Cu Cmp

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Effect of Complex Agent on Copper Dissolution in Alkaline Slurry for Chemical Mechanical Planarization

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.455-456.1145 ◽

2012 ◽

Vol 455-456 ◽

pp. 1145-1148

Author(s):

Yan Gang He ◽

Jia Xi Wang ◽

Xiao Wei Gan ◽

Wei Juan Li ◽

Yu Ling Liu

Keyword(s):

Surface Roughness ◽

Removal Rate ◽

Chemical Mechanical Planarization ◽

Dielectric Materials ◽

Mechanism Analysis ◽

Copper Dissolution ◽

Complex Agent ◽

High Removal Rate ◽

Rc Delay ◽

Low K

With the microelectronic technology node moves down to 45 nm and beyond, and to reduce the RC delay time, low-k dielectric materials have been used to replace regular dielectric materials. Therefore, the down force of chemical mechanical planarization (CMP) needs to decrease based on the characteristics of low-k materials: low mechanical strength. In this study, the effect of new complex agent on copper dissolution in alkaline slurry for CMP was investigated. Based on the reaction mechanism analysis of Cu in alkaline slurry in CMP, the performance of Cu removal rate and surface roughness condition were discussed. It has been confirmed that Cu1 slurry demonstrates a relatively high removal rate with low down force. And also, by utilizing the Cu1 slurry, good result of Cu surface roughness were obtained.

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Challenges and Rewards of Low-Abrasive Copper CMP: Evaluation and Integration for Single-Damascene Cu/Low-k Interconnects for the 90nm Node

MRS Proceedings ◽

10.1557/proc-816-k1.1 ◽

2004 ◽

Vol 816 ◽

Cited By ~ 2

Author(s):

Christopher L. Borst ◽

Stanley M. Smith ◽

Mona Eissa

Keyword(s):

High Performance ◽

Removal Rate ◽

Chemical Mechanical Planarization ◽

Low Dielectric ◽

Process Characterization ◽

Rate Profile ◽

Feature Scale ◽

Cu Cmp ◽

Low K ◽

Successful Integration

AbstractLow-abrasive content slurries for copper (Cu) chemical-mechanical planarization (CMP) have been developed to achieve removal rate and removal uniformity comparable to conventional slurries. They can improve post-CMP defectivity, improve topography and allow operation at lower polish pressures that are more compatible with the low-dielectric constant (low-k) materials required for current and future high-performance interconnects. Integration of these slurries into a yielding product with 9-level Cu/low-k metallization requires fundamental learning and process characterization. This paper discusses the some of the challenges encountered during development, integration, and qualification of a low-abrasive Cu CMP process for Texas Instruments (TI) Incorporated's 90 nm technology node with copper/organosilicate interconnect. As abrasive content is reduced, the slurry chemistry must play a larger role in CMP removal. A more aggressive reactive chemical formulation requires an effective inhibitive component to keep Cu static etch rate low. As a result, wafer-scale process and consumable interactions, die-scale planarization efficiency, and feature-scale removal rates each become more sensitive to process changes. Pressure and temperature have larger effects on removal rate/profile than conventional slurries, and complete clearing of Cu puddled over underlying topography becomes more difficult. Successful integration of these slurries, however, can achieve excellent results in dishing and erosion topography, Cu thickness uniformity, and Cu loss in small features such as vias and landing pads. Low-abrasive content solutions are also more stable and easy to handle in slurry distribution vessels and lines, have lower scratch and residue defectivity, and have greatly extended margin for overpolish. As lowabrasive content Cu slurry options continue to evolve to become manufacturable solutions, their benefits far outweigh the costs and challenges encountered in their successful integration.

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Fundamentals of Slurry Design for CMP of Metal and Dielectric Materials

MRS Bulletin ◽

10.1557/mrs2002.245 ◽

2002 ◽

Vol 27 (10) ◽

pp. 752-760 ◽

Cited By ~ 68

Author(s):

Rajiv K. Singh ◽

Seung-Mahn Lee ◽

Kyu-Se Choi ◽

G. Bahar Basim ◽

Wonseop Choi ◽

...

Keyword(s):

Surface Topography ◽

Chemical Mechanical Planarization ◽

Soft Materials ◽

Dielectric Materials ◽

Next Generation ◽

Chemical Additives ◽

Input Variables ◽

Interaction Phenomena

AbstractThe formulation of slurries for chemical–mechanical planarization (CMP) is currently considered more of an art than a science, due to the lack of understanding of the wafer, slurry, and pad interactions involved. Several factors, including the large number of input variables for slurries and the synergistic interplay among input variables and output parameters, further complicate our ability to understand CMP phenomena. This article provides a fundamental basis for the choice of chemical additives and particles needed for present-day and next-generation slurry design. The effect of these components on nanoscale and microscale interaction phenomena is investigated. Methodologies are suggested for the development of next-generation slurries required to overcome CMP challenges related to defectivity and the surface topography of soft materials such as Low-κ dielectrics and copper.

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Development and Application of an Abrasive-Free Polishing Solution for Copper

MRS Bulletin ◽

10.1557/mrs2002.248 ◽

2002 ◽

Vol 27 (10) ◽

pp. 772-775 ◽

Cited By ~ 12

Author(s):

Masanobu Hanazono ◽

Jin Amanokura ◽

Yasuo Kamigata

Keyword(s):

Performance Analysis ◽

Barrier Layer ◽

Reaction Layer ◽

Chemical Mechanical Planarization ◽

Chemical Component ◽

Electrochemical Methods ◽

Copper Films ◽

Cu Cmp ◽

Metal Barrier

AbstractAn abrasive-free polishing (AFP) solution for chemical–mechanical planarization (CMP) of copper films on semiconductor wafers has been developed to overcome such disadvantages of conventional CMP as dishing, erosion, Cu and oxide loss, and microscratching. Electrochemical methods are an effective way of understanding the role of each chemical component in the AFP solution in order to optimize its performance. Analysis of the reaction layer of Cu elucidates the reasons for the excellent results that have been obtained. By applying the AFP solution for Cu CMP in combination with a slurry for CMP of the metal barrier layer, seven-level multilayer Cu interconnections can be successfully fabricated.

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Chemical-Mechanical Planarization of Copper: The Effect of Inhibitor and Complexing Agent

MRS Proceedings ◽

10.1557/proc-767-f6.10 ◽

2003 ◽

Vol 767 ◽

Cited By ~ 3

Author(s):

Ying Luo ◽

Tianbao Du ◽

Vimal Desai

Keyword(s):

Hydrogen Peroxide ◽

Photoelectron Spectroscopy ◽

Removal Rate ◽

Chemical Mechanical Planarization ◽

Electrochemical Process ◽

Copper Removal ◽

Alkaline Condition ◽

Complexing Agent ◽

Polarization Studies ◽

Cu Cmp

AbstractThe present investigation was focused on understanding of the oxidation, dissolution and modification of Cu surface in slurries at various pH using hydrogen peroxide as oxidizer, glycine as complexing agent and 3-amino-triazol (ATA) as inhibitor during Cu-CMP. The electrochemical process involved in the oxidative dissolution of copper was investigated by potentiodynamic polarization studies. Surface modification of copper was investigated using Xray photoelectron spectroscopy to understand the interaction of Cu-H2O2-glycine-ATA during CMP. In the absence of glycine and ATA, the copper removal rate is found to be high in a slurry with 5% H2O2 at pH 2, then it decreases with increasing pH and reaches the minimum at pH 6, it continuously increases at alkaline condition. In the presence of 0.01M glycine, the removal rate of copper decreases in acidic slurries while increases significantly in alkaline slurries. With the further addition of ATA, the copper removal rate was reduced. However, better surface planarity was obtained. The present investigation enhanced understanding of the mechanism of Cu CMP in the presence of oxidizer, complexing agent and inhibitor for formulation of a highly effective CMP-slurry.

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The Adhesion of Pad Particles on Wafer Surfaces during Cu CMP

MRS Proceedings ◽

10.1557/proc-867-w1.9 ◽

2005 ◽

Vol 867 ◽

Cited By ~ 1

Author(s):

Jae-Hoon Song ◽

Ja-Hyung Han ◽

Yi-Koan Hong ◽

Young-Jae Kang ◽

Jin-Goo Park ◽

...

Keyword(s):

Isoelectric Point ◽

Adhesion Force ◽

Dielectric Materials ◽

Interaction Forces ◽

Zeta Potentials ◽

Alumina Particles ◽

Cu Cmp ◽

Wafer Surfaces

AbstractThe adhesion force of pad and alumina were experimentally and theoretically investigated in slurry solutions of different pHs. The isoelectric point (IEP) of pad particles was measured to be around pH 3. The wafer surfaces showed negative zeta potentials in the investigated pH ranges with exception of FSG and Ta. Cu and Ta showed higher interaction forces than dielectric materials. The lowest adhesion force was measured between pad particle and wafer surfaces in a slurry solution of pH 11. The magnitude of adhesion force of pad particles was lower than alumina particles.

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