p-InGaN/n-GaN Heterojunction Diodes and their Application to Heterojunction Bipolar Transistors

2000 ◽  
Vol 639 ◽  
Author(s):  
Toshiki Makimoto ◽  
Kazuhide Kumakura ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
Valence Band ◽  
Breakdown Voltage ◽  
Mole Fraction ◽  
Heterojunction Bipolar Transistors ◽  
Room Temperature ◽  
Tunneling Current ◽  
Current Gain ◽  
Heterojunction Diodes ◽  
Hole Confinement ◽  
Valence Band Discontinuity

ABSTRACTp-InGaN/n-GaN heterojunction diodes were grown by metalorganic vapor phase epitaxy and characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements. We changed the In mole fraction in p-InGaN from 0 to 25% to investigate diode characteristics. All the diodes showed rectified I-V characteristics at room temperature. The ideality factors obtained from forward I-V characteristics were around 2, meaning that the recombination current is dominant instead of the tunneling current through the defects in depletion layers of the diodes. The breakdown voltage in reverse I-V characteristics depends on the net donor concentration (ND - NA) in n-GaN instead of the In mole fraction in p-InGaN. This result also means that the defects in p-InGaN do not influence the breakdown voltage. The built-in potential from C-V measurements decreases with the In mole fraction in p-InGaN, meaning that the valence band discontinuity increases with the In mole fraction. This valence band discontinuity realizes the hole confinement in an HBT with an p-InGaN base. Using these InGaN/GaN heterojunction diodes, an InGaN/GaN double heterojunction bipolar transistor was fabricated for the first time. The maximum current gain of 1.2 was obtained at room temperature.

InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction

2008 ◽  
Vol 47-50 ◽  
pp. 383-386
Author(s):  
Jung Hui Tsai ◽  
Shao Yen Chiu ◽  
Wen Shiung Lour ◽  
Chien Ming Li ◽  
Yi Zhen Wu ◽  
...  
Keyword(s):  
Valence Band ◽  
Integrated Circuit ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Offset Voltage ◽  
Potential Spike ◽  
Emitter Junction ◽  
Valence Band Discontinuity

In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

scholarly journals A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
John T Torvik ◽  
M. Leksono ◽  
J. I. Pankove ◽  
B. Van Zeghbroeck
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Device Structure ◽  
Fabrication And Characterization ◽  
Dc Current

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.

New Method of Computing Band Offsets and Its Application to AlGaN/GaN Heterostructures

1997 ◽  
Vol 482 ◽  
Author(s):  
Richard T. Webster ◽  
A. F. M. Anwar
Keyword(s):  
Experimental Data ◽  
Carrier Concentration ◽  
Valence Band ◽  
Mole Fraction ◽  
Close Agreement ◽  
Simple Technique ◽  
Piezoelectric Effect ◽  
Interface Charge ◽  
Band Alignments ◽  
Valence Band Discontinuity

AbstractCalculated sheet carrier concentration as a function of Al mole fraction in the quantum well (QW) formed at the GaN/AlGaN heterointerface is calculated and compared to experimental data. Close agreement between experiment and theory is observed. The calculated sheet carrier concentration reflects the maximum carrier concentration possible in the GaN QW for a given Al mole fraction and can not be used to argue in favor of either interface charge or piezoelectric effect as giving rise to the carriers. Based on experimental data the charge density in the AlGaN layer is estimated to be 4 × 1012cm-2The calculations are based upon a simple technique to determine valence band alignments. Calculated values are compared to experimental data showing excellent agreement. A calculated valence band discontinuity of 0.42eV for AlN/GaN is well within the experimental bounds.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

GaInAs camel transistors with current gain above 6 at room temperature

1991 ◽  
Vol 27 (4) ◽  
pp. 335 ◽  
Author(s):  
M. Marso ◽  
G. Zwinge ◽  
D. Grützmacher ◽  
J. Hergeth ◽  
H. Beneking
Keyword(s):  
Room Temperature ◽  
Current Gain

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

Interface properties and valence-band discontinuity of MnS/ZnSe heterostructures

1996 ◽  
Vol 54 (4) ◽  
pp. 2718-2722 ◽  
Author(s):  
L. Wang ◽  
S. Sivananthan ◽  
R. Sporken ◽  
R. Caudano
Keyword(s):  
Valence Band ◽  
Interface Properties ◽  
Valence Band Discontinuity

VERTICAL SCALING OF TYPE I InP HBT WITH FT > 500 GHZ

2004 ◽  
Vol 14 (03) ◽  
pp. 625-631 ◽  
Author(s):  
J. W. LAI ◽  
W. HAFEZ ◽  
M. FENG
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Impact Ionization ◽  
Cutoff Frequency ◽  
Current Gain ◽  
Vertical Scaling ◽  
Physical Parameters ◽  
Type I ◽  
Peak Current Density ◽  
Rf Performance

We have fabricated the high-speed InP/InGaAs -based single heterojunction bipolar transistors (SHBTs) with current gain cutoff frequency, fT from 166GHz to over 500GHz by the approach of vertical scaling. Collector thickness is reduced from 3000Å to 750Å and the peak current density is increased up to 1300kA/cm2. In this paper, device rf performance has been compared with respect to materials with different vertical dimensions. The scaling limitation is also studied by analytical approach. The extracted physical parameters suggest that the parasitic emitter resistance is the major limit on further enhancing ultra-scaled HBT intrinsic speed due to the associated RECBC delay. The cut-off frequency of a 500Å collector SHBT has been measured and the results indicate a dramatic drop on fT, supporting the conclusion projected by model analysis. It is also commented that for deeply downscaled HBTs, impact ionization could be another degrading mechanism limits device bandwidth.

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