High electron mobility in free-standing GaN substrates

2000 ◽  
Vol 639 ◽  
Author(s):  
A. Saxler ◽  
D. C. Look ◽  
S. Elhamri ◽  
J. Sizelove ◽  
D. Cull ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
High Mobility ◽  
High Electron ◽  
Free Standing ◽  
Effect Analysis ◽  
Bulk Layer ◽  
Field Dependent ◽  
Bulk Gan ◽  
The Magnetic Field

ABSTRACTHigh peak electron mobilities were observed in free-standing c-plane GaN substrates. Two layers, a low mobility degenerate layer and a high mobility bulk layer, were present in these samples. The carrier concentrations and mobilities for the layers were extracted using two methods: 1) magnetic field dependent Hall effect analysis and 2) a simple two carrier model with the assumption that one of the layers is degenerate. In addition, measurements were performed after etching away the degenerate layer. The mobility of the bulk layer is found to peak at nearly 8000 cm2/Vs at 60K using the magnetic field dependent Hall effect data. Record room temperature mobility for bulk GaN of 1190 cm2/V s was measured.

Magnetostrictive Self-Diagnosing Smart Bolts

2014 ◽  
Author(s):  
Vladislav Sevostianov
Keyword(s):  
Magnetic Field ◽  
Plastic Deformation ◽  
Magnetic Fields ◽  
Hall Effect ◽  
Stress Level ◽  
Experimental Validation ◽  
Rock Bolts ◽  
Three Point Bending ◽  
Bending Loading ◽  
The Magnetic Field

The paper presents the concept of self-diagnosing smart bolts and its experimental validation. In the present research such bolts are designed, built, and experimentally tested. As a key element of the design, wires of Galfenol (alloy of iron and gallium) are used. This material shows magnetostrictive properties, and, at the same time, is sufficiently ductile to follow typical deformation of rock bolts, and is economically affordable. Two types of Galfenol were used: Ga10Fe90 and Ga17Fe83. The wires have been installed in bolts using two designs — in a drilled central hole or in a cut along the side — and the bolts were tested for generation of the magnetic field under three-point bending loading. To measure the magnetic field in the process of deformation, a magnetometer that utilizes the GMR effect was designed, built, and compared with one utilizing the Hall effect. It is shown that (1) magnetic field generated by deformation of the smart bolts at the stress level of plastic deformation is sufficient to be noticed by the proposed magnetometer; however, the magnetometer using Hall effect is insufficient; (2) Ga10Fe90 produces higher magnetic fields than Ga17Fe83; (3) the magnetic field in plastically bended bolts is relatively stable with time.

scholarly journals The hall effect in liquid electrolytes

1913 ◽  
Vol 88 (606) ◽  
pp. 588-604 ◽  
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Electric Current ◽  
Metal Plate ◽  
Satisfactory Explanation ◽  
Thermo Electric ◽  
Field Independent ◽  
Set Up ◽  
The Magnetic Field ◽  
Thin Metal Plate

The distortion of the lines of flow of an electric current in a thin metal plate by the action of a magnetic field was discovered in 1879. Hall attributed this to the action of the magnetic field on the molecular currents in the metal film, which were deflected to one side or the other and accompanied by a corresponding twist of the equipotential lines. This explanation did not pass without criticism, and another theory of the effect found by Hall was published in 1884. In that paper the author seeks to explain the effect by assuming a combination of certain mechanical strains and Peltier effects, a thermo-electric current being set up between the strained and the unstrained portions. The effect of such strain was to produce a reverse effect in some metals, and these were precisely the metals for which the Hall effect was found to reverse. Aluminium was the only exception. In other respects, however, as shown by Hall in a later paper, Bidwell's theory did not stand the test of experiment, and the results lend no support to his theory, while they are in complete accordance withe the explanation that the molecular currents are disturbed by the action of the magnetic field. On the electron theory of metallic conduction, the mechanism of the Hall effect is more obvious, but at present no satisfactory explanation of the reversal found in some metals is known. Further experiments have made it clear that there is a real deflection of the elementary currents, due to the application of the magnetic field, independent of any effect due to strain.

Quantum Hall effects

Quantum 20/20 ◽  
2019 ◽  
pp. 303-322
Author(s):  
Ian R. Kenyon
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Energy Gap ◽  
Quantum Hall ◽  
Free Electrons ◽  
Electron Gases ◽  
Hall Conductance ◽  
Hall Effects ◽  
The Stability ◽  
The Magnetic Field

It is explained how plateaux are seen in the Hall conductance of two dimensional electron gases, at cryogenic temperatures, when the magnetic field is scanned from zero to ~10T. On a Hall plateau σ‎xy = ne 2/h, where n is integral, while the longitudinal conductance vanishes. This is the integral quantum Hall effect. Free electrons in such devices are shown to occupy quantized Landau levels, analogous to classical cyclotron orbits. The stability of the IQHE is shown to be associated with a mobility gap rather than an energy gap. The analysis showing the topological origin of the IQHE is reproduced. Next the fractional QHE is described: Laughlin’s explanation in terms of an IQHE of quasiparticles is presented. In the absence of any magnetic field, the quantum spin Hall effect is observed, and described here. Time reversal invariance and Kramer pairs are seen to be underlying requirements. It’s topological origin is outlined.

scholarly journals Measurement of the magnetic field-dependent refractive index of magnetic fluids in bulk

2008 ◽  
Vol 6 (3) ◽  
pp. 195-197 ◽  
Author(s):  
刘婷 Ting Liu ◽  
陈险峰 Xianfeng Chen ◽  
狄子昀 Ziyun Di ◽  
张军锋 Junfeng Zhang ◽  
李新碗 Xinwan Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Refractive Index ◽  
Magnetic Fluids ◽  
Field Dependent ◽  
The Magnetic Field

Conduction electron diamagnetism in alloys and magnetic-field-dependent dielectric constant of a Fermi gas

1964 ◽  
Vol 280 (1380) ◽  
pp. 85-96 ◽  
Keyword(s):  
Magnetic Field ◽  
Dielectric Constant ◽  
Free Electrons ◽  
Impurity Potential ◽  
First Order ◽  
Dilute Alloys ◽  
A Value ◽  
Field Dependent ◽  
Self Consistency ◽  
The Magnetic Field

The diamagnetism of free electrons in the presence of charged impurity centres which are sufficiently dilute to be non-interacting is calculated to first order in the strength of the potential of the impurity centre. This is done by combining the density-matrix treatment of Landau diamagnetism with the impurity-screening theory o f March & Murray. The susceptibility involves the integrated value of the impurity potential through the crystal, and its first derivative with respect to the magnetic field, B. If the impurity potential is assumed to have a value appropriate to B — 0, then the result for the change in diamagnetic susceptibility on alloying agrees with that of Kohn & Luming (1963). It is shown, however, that the impurity potential is modified in the presence of the magnetic field, and in particular it has angular dependence. The correction to the dia­magnetic susceptibility due to this self-consistency is shown to be significant (25% ). The relevance of the theory to experimental results on dilute alloys is briefly discussed. Finally, as a by-product of the investigation, we have obtained interesting results about the form of the field-dependent dielectric constant.

Spin Hall Effect in a Magnetic Field

2001 ◽  
Vol 690 ◽  
Author(s):  
Shufeng Zhang
Keyword(s):  
Magnetic Field ◽  
Diffusion Equation ◽  
Electric Field ◽  
Hall Effect ◽  
Transverse Electric ◽  
Spin Current ◽  
Magnetic Semiconductor ◽  
Hall Voltage ◽  
Spin Polarized ◽  
The Magnetic Field

ABSTRACTWhen a spin-polarized current is injected into a non-magnetic semiconductor, a transverse electric field known as Hall voltage is generated. By using a macroscopic diffusion equation, we derive the Hall voltage in the presence of both spin current and magnetic field. Novel features such as oscillating Hall signals as a function of the magnetic field and geometrical dependence of Hall signals are predicted.

Sign in / Sign up

Export Citation Format

Share Document