Electrical Properties of Solid Phase Crystallized Silicon Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Tadashi Watanabe ◽  
Hajime Watakabe ◽  
Toshiyuki Sameshima
Keyword(s):  
Heat Treatment ◽  
Electrical Conductivity ◽  
Energy Density ◽  
Laser Irradiation ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Laser Energy ◽  
Silicon Films ◽  
Laser Energy Density

ABSTRACTIn this study, the carrier mobility and density for solid phase crystallized (SPC) silicon films fabricated at 600 °C for 48 hours are analyzed by free carrier optical absorption. The carrier mobility is 40 cm2/Vs for SPC films doped with 6×1019-cm−3-phosphorus atoms. This analysis suggests the SPC films have fine crystalline grains closed to single crystalline silicon. In addition, initial carrier density was 3×1019 cm−3, which increased to 6×1019 cm−3by XeCl excimer laser irradiation of 500mJ/cm2. The inactivated regions in SPC films are reduced by laser irradiation. However, the electrical conductivity after laser irradiation for SPC films doped with 6×1018-cm−3-phosphorus atoms decreased from 3.3 to 0.018 S/cm as laser energy density increased to 500mJ/cm2. On the other hand, the electrical conductivity increased from 14.7 to 31.3 S/cm with similar increase of laser energy density after H2O vapor heat treatment at 260°C for 3 hours with 1.3 MPa. Furthermore, the characteristics of n-channel TFTs fabricated with initial SPC films as well as SPC films which was irradiated by laser at 425mJ/cm2 are also researched. The threshold voltage is decreased from 3.8 to 2.0 V by laser irradiation. Threshold voltages of both cases are decreased from 3.8 to 2.4 V for no-laser irradiation and from 2.0 to 0.8 V for laser irradiation, after H2O vapor heat treatment at 310°C for 1 hour with 9.0MPa. Based on the above trial, the defect reduction method combining laser irradiation and H2O vapor heat treatment has proved to be very effective for SPC films and SPC TFTs.

Structural and Electronic Properties of Laser Crystallized Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
T. Sameshima
Keyword(s):  
Energy Density ◽  
Hall Effect ◽  
Carrier Mobility ◽  
Laser Energy ◽  
Threshold Energy ◽  
Free Carrier ◽  
Silicon Films ◽  
Laser Energy Density ◽  
Threshold Energy Density ◽  
Hall Effect Measurements

AbstractFundamental properties of silicon films crystallized by a 30-ns-pulsed XeCI excimer laser were discussed. Although crystallization of 50-nm thick silicon films formed on quartz substrates occurred through laser hearing at the crystalline threshold energy density of 160 mJ/cm2, a higher laser energy density at 360 mJ/cm2 was necessary to crystallize silicon films completely. Analyses of free carrier optical absorption revealed that phosphorus-doped silicon films with a carrier density about 2×1020 cm−3 had a high carrier mobility of 20 cm2/Vs for irradiation at the crystallization threshold energy density, while Hall effect measurements gave a carrier mobility of electrical current traversing grain boundaries of 3 cm2/Vs. This suggested that the crystalline grains had good electrical properties. As the laser energy density increased to 360 mJ/cm2 and laser pulse number increased to 5, the carrier mobility obtained by the Hall effect measurements markedly increased to 28 cm2/Vs because of improvement of grain boundary properties, while the carrier mobility obtained by analysis of free carrier absorption increased to 40 cm2/Vs. A post annealing method at 190°C with high-pressure H2O vapor was developed to reduce the density of defect states. Increase of carrier mobility to 500 cm2/Vs was demonstrated in the polycrystalline silicon thin film transistors fabricated in laser crystallized silicon films.

Excimer Laser Crystallized Amorphous Silicon Films: Effects of Shot Density and Substrate Temperature

1991 ◽  
Vol 219 ◽  
Author(s):  
R. I. Johnson ◽  
G. B. Anderson ◽  
S. E. Ready ◽  
J. B. Boyce
Keyword(s):  
Energy Density ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Laser Energy ◽  
Silicon Films ◽  
Laser Energy Density ◽  
Laser Crystallization ◽  
Average Grain Size ◽  
Substrate Temperatures

ABSTRACTLaser crystallization of a-Si thin films has been shown to produce materials with enhanced electrical properties and devices that are faster and capable of carrying higher currents. The quality of these polycrystalline films depends on a number of parameters such as laser energy density, shot density, substrate temperature, and the quality of the starting material. We find that the average grain size and transport properties of laser crystallized amorphous silicon films increase substantially with laser energy density, increase only slightly with laser shot density, and are unaffected by substrate temperatures of up to 400°C. The best films are those processed in vacuum but films of fair quality can also be obtained in air and nitrogen atmospheres.

Er-Doping in Silicon by Pulsed Laser Irradiation

1993 ◽  
Vol 301 ◽  
Author(s):  
Kenshiro Nakashima
Keyword(s):  
Energy Density ◽  
Laser Irradiation ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Energy Density ◽  
Er Doping ◽  
Erbium Ions ◽  
State Regime ◽  
Er Doped ◽  
Pulsed Laser Irradiation

ABSTRACTErbium ions were successfully doped in silicon by pulsed laser irradiation above the threshold laser energy density. Photoluminescence peaks at 1.54, 1.59 and 1.64 µm from Er-optical centers were observed after annealing of Er-doped samples. The intensity of the 1.54 µm Er-emission band increased upon increase in the laser energy density, and then gradually decreased after reaching the maximum, due to the laser sputtering of the silicon substrate. Oxygen atoms, which were unintentionally codoped with Er-ions, were found to be distributed in the same region as in Er-ions, and were suggested to play roles to activate Er-optical centers. The maximum concentration of Er-ions doped in the solid state regime were estimated to be the order of 1018 cm−3 by the Rutherford backscattering measurements.

Temperature Gradient and Heat Conduction of Titanium Alloy during Laser Welding

2010 ◽  
Vol 154-155 ◽  
pp. 42-45
Author(s):  
Ke Rong Zhang ◽  
Jian Xun Zhang
Keyword(s):  
Titanium Alloy ◽  
Heat Conduction ◽  
Liquid Phase ◽  
Energy Density ◽  
Temperature Gradient ◽  
Molten Pool ◽  
Solid Phase ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Heating And Cooling

This paper set a numerical calculation model with local mesh refined for laser welding of titanium alloy applying body heat source model which can accurately describe the shape of keyhole and molten pool on laser welded joint. It calculated the change patterns of the temperature distribution and heat conduction in region of gas, liquid, and solid phase under different laser energy density on the stage of heating and cooling. The results showed that with the increase of the laser energy density t, the dimension of keyhole and molten pool, the temperature gradient and the duration of gas and liquid phase on the stage of heating and cooling are all expected to increase. Under the same laser energy density, temperature gradient has a maximum value in the region of gas phase, secondly is in liquid phase, and minimum in solid phase.

Raman Measurements on Graphite Modified by High Power Laser Irradiation

1984 ◽  
Vol 35 ◽  
Author(s):  
J. Steinbeck ◽  
G. Braunstein ◽  
M.S. Dresselhaus ◽  
B.S. Elman ◽  
T. Venkatesan
Keyword(s):  
Energy Density ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
High Power ◽  
Laser Energy ◽  
Laser Pulses ◽  
Laser Energy Density ◽  
High Power Laser ◽  
Power Laser ◽  
Raman Microprobe

AbstractThe behavior of highly anisotropic materials under short pulses of high power laser irradiation has been studied by irradiating highly oriented pyrolytic graphite (HOPG) with 30 nsec Ruby-laser pulses with energy densities between 0.1 and 5.0J/cm2. Raman spectroscopy has been used to investigate the laser-induced modifications to the crystalline structure as a function of laser energy density of the laser pulse. A Raman microprobe was used to investigate the spatial variations of these near-surface regions. The irradiation of HOPG with energy densities above ~ 0.6J/cm2 leads to the appearance of the ~ 1360 cm-1 disorder-induced line in the first order Raman spectrum. The intensity of the ~ 1360cm-1 line increases with increasing laser energy density. As the energy density of the laser pulse reaches about 1.0J/cm2, the ~ 1360cm-1 line and the ~ 1580cm-1 Raman-allowed mode broaden and coalesce into a broad asymmetric band, indicating the formation of a highly disordered region, consistent with RBS-channeling measurements. However, as the laser energy density of the laser pulses is further increased above 3.0J/cm2, the two Raman lines narrow and can again be resolved suggesting laser-induced crystallization. The Raman results are consistent with high resolution electron microscopy observations showing the formation of randomly oriented crystallites. Raman Microprobe spectra revealed three separate regions of behavior: (i) an outer unirradiated region where the material appears HOPG-like with a thin layer of material coating the surface, (ii) an inner irradiated region where the structure is uniform, but disordered, and (iii) an intermediate region between the other regions where the structure is highly disordered. The changes in structure of the inner region are consistent with the behavior observed with RBS and conventional Raman spectra. The identification of an amorphous carbon-like layer on the outer region is consistent with a large thermomechanical stress at the graphite surface, introduced by the high power laser pulse, and known to occur in metals.

scholarly journals Effect of Laser Energy Density, Internal Porosity and Heat Treatment on Mechanical Behavior of Biomedical Ti6Al4V Alloy Obtained with DMLS Technology

Materials ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2331 ◽  
Author(s):  
Żaneta Anna Mierzejewska
Keyword(s):  
Mechanical Properties ◽  
Heat Treatment ◽  
Energy Density ◽  
Laser Energy ◽  
Xrd Analysis ◽  
Laser Energy Density ◽  
Simultaneous Increase ◽  
Direct Metal Laser Sintering ◽  
X Ray Diffraction ◽  
Elongation At Break

The purpose of this paper was to determine the influence of selected parameters of Direct Metal Laser Sintering and various heat treatment temperatures on the mechanical properties of Ti6Al4V samples oriented vertically (V, ZX) and horizontally (H, XZ). The performed micro-CT scans of as-build samples revealed that the change in laser energy density significantly influences the change in porosity of the material, which the parameters (130–210 W; 300–1300 mm/s), from 9.31% (130 W, 1300 mm/s) to 0.16% (190 W, 500 mm/s) are given. The mechanical properties, ultimate tensile strength (UTS, Rm) and yield strength (YS, Re) of the DMLS as-build samples, were higher than the ASTM F 1472 standard suggestion (UTS = 1100.13 ± 126.17 MPa, YS = 1065.46 ± 127.91 MPa), and simultaneously, the elongation at break was lower than required for biomedical implants (A = 4.23 ± 1.24%). The low ductility and high UTS were caused by a specific microstructure made of α’ martensite and columnar prior β grains. X-Ray Diffraction (XRD) analysis revealed that heat treatment at 850 °C for 2 h caused the change of the microstructure intothe α + β combination, affecting the change of strength parameters—a reduction of UTS and YS with the simultaneous increase in elongation (A). Thus, properties similar to those indicated by the standard were obtained (UTS = 908.63 ± 119.49 MPa, YS = 795.9 ± 159.32 MPa, A = 8.72 ± 2.51%), while the porosity remained almost unchanged. Moreover, the heat treatment at 850 °C resulted in the disappearance of anisotropic material properties caused by the layered structure (UTSZX = 908.36 ± 122.79 MPa, UTSXZ = 908.97 ± 118.198 MPa, YSZX = 807.83 ± 124.05 MPa, YSXZ = 810.56 ± 124.05 MPa, AZX = 8.75 ± 2.65%, and AXZ = 8.68 ± 2.41%).

The effects of Pulsed Green Laser Annealing for Carbon NanoWalls (CNWs)

2013 ◽  
Vol 1505 ◽  
Author(s):  
Norihito Kawaguchi ◽  
Akihiko Yoshimura
Keyword(s):  
Energy Density ◽  
Laser Irradiation ◽  
Laser Annealing ◽  
Laser Energy ◽  
Green Laser ◽  
Laser Energy Density ◽  
Oriented Crystal ◽  
Peak Intensity ◽  
Carbon Nanowalls ◽  
Band Spectra

ABSTRACTThe effects of the pulsed green laser annealing at ambient nitrogen for two different heights-CNWs grown on silicon substrate were investigated on the crystallinity and morphology using Raman spectroscopy, SEM, TEM and XPS. For the 1μm height-CNWs, the peak intensity of D-band spectra decreased as the laser energy density increased up to 1.3Jcm-2, ID/IG ratio decreased from 2.5 to 0.7. The crystallinity of CNWs was improved by the laser irradiation. For the 1μm height-CNWs irradiated above 1.5Jcm-2, the height of CNWs decreased gradually as the laser energy density increased, it was clarified that the surfaces of CNWs were vaporized by the laser irradiation. For the 20μm height-CNWs, the peak intensity of D band spectra also decreased until the laser energy density increased up to 0.8Jcm-2, ID/IG ratio decreased from 1.6 to 0.5. From the TEM observation of CNWs irradiated at 0.8 Jcm-2, it was confirmed that the laser irradiation changed CNWs to be highly oriented crystal structure. However above 0.8Jcm-2, the crystallinity was deteriorated due to the vaporization of CNWs as the same as the 1μm height-CNWs. The pulsed green laser annealing is effective to improve the crystallinity of CNWs on optimal laser energy density for both height-CNWs, the higher laser energy densities vaporized the CNWs and changed the morphology and crystallinity of CNWs.

scholarly journals Investigation into microstructure and element segregation of Inconel 713LC during SLM processing using modified cellular automaton model

2021 ◽  
Author(s):  
Amir Ansari Dezfoli ◽  
Yu-Lung Lo ◽  
M. Mohsin Raza
Keyword(s):  
Experimental Investigation ◽  
Energy Density ◽  
Cellular Automaton ◽  
Solid Phase ◽  
Laser Energy ◽  
Crack Density ◽  
Laser Energy Density ◽  
Ca Model ◽  
Solidification Speed ◽  
Element Segregation

Abstract A numerical and experimental investigation is performed into the feasibility of fabricating IN713LC components using selective laser melting (SLM) through an appropriate control of the solidification speed, microstructure formation and element segregation. A modified Cellular Automaton (CA) model is developed to explore the nucleation, grain growth and element segregation behavior of IN713LC during ultra-fast solidification. It is found that the undesired phase formation which occurs during SLM processing of IN713LC is caused by the micro segregation of Nb, Ti, Mo and C at the grain boundaries. It is further shown that the micro segregation intensity depends on the solidification speed, which is determined in turn by the laser energy density. In particular, a lower laser energy density increases the solidification speed and results in a more uniform solid phase, thereby reducing the risk of crack formation. The simulation results are verified by experimental investigation. The results confirm that a lower laser energy density reduces the crack density and crack length. Finally, a crack-free IN713LC SLM sample is successfully produced by reducing the energy density from 360 to 170 J/m.

Electroless copper films deposited onto laser-activated aluminum nitride and alumina

1994 ◽  
Vol 9 (4) ◽  
pp. 1019-1027 ◽  
Author(s):  
M. J. DeSilva ◽  
A. J. Pedraza ◽  
D.H. Lowndes
Keyword(s):  
Energy Density ◽  
Aluminum Nitride ◽  
Laser Irradiation ◽  
Laser Energy ◽  
Annealing Treatment ◽  
Surface Region ◽  
Laser Energy Density ◽  
Copper Films ◽  
Near Surface ◽  
Electroless Copper

Metallization of ceramic substrates by laser activation and subsequent electroless deposition has been demonstrated recently in aluminum nitride and alumina. However, the bond strength between the electroless copper and the ceiamic substrate is weak (less than 14 MPa). Low temperature annealing of electroless copper films deposited on substrates activated at low laser energies strongly increases the adhesion strength. The effectiveness of the annealing for improving the metal-ceramic bonding is dependent upon the laser treatment performed on the substrate prior to deposition. Faster deposition kinetics are obtained for both substrates by increasing the laser energy density. On the other hand, an increase in the laser energy density leads to poor adhesion strengths. The dislocation microstructure produced during laser irradiation in aluminum nitride is analyzed as a possible cause of laser activation. Free aluminum produced by laser irradiation of aluminum nitride and of alumina is discussed as another factor of laser activation. The chemical and microstructural changes taking place in the near-surface region as a consequence of laser-induced processes are correlated with adhesion enhancement promoted by the annealing treatment.

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