Effect Of pH On Chemical-Mechanical Polishing Of Copper And Tantalum
Keyword(s):
ABSTRACTpH has a strong effect on the polish rates of copper (Cu) and tantalum (Ta) [1]. In this paper, removal rates of Cu and Ta using aqueous slurries containing alumina and silica abrasives in H2O2-glycine solution are studied at varying pH values. It is observed that variation in the Cu and Ta removal rates is a direct result of the change in surface characteristics of the films. Surface characteristics such as presence/absence of a passivating layer and hardness of such layer vary with pH and hence result in removal rate variation. It is also shown that a favorable Cu/Ta polish rate selectivity can be obtained by adjusting the pH of the slurry.
1998 ◽
Vol 38
(8-9)
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pp. 213-221
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2010 ◽
Vol 44-47
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pp. 1066-1069
2015 ◽
Vol 231
(3)
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pp. 332-348
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