Deposition of Dielectric Films by Remote Plasma Enhanced CVD

1986 ◽  
Vol 68 ◽  
Author(s):  
G. Lucovsky ◽  
D. V. Tsu ◽  
R. J. Markunas
Keyword(s):  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Films ◽  
Silicon Oxides ◽  
Plasma Enhanced Cvd ◽  
Process Chemistry ◽  
Temperature Deposition ◽  
Process Gases ◽  
Plasma Excitation ◽  
Deposited Films

AbstractWe describe a plasma enhanced chemical vapor deposition process (PECVD) developed for the low temperature deposition of thin films of silicon oxides, nitrides and oxynitrides.The process, designated as remote PECVD (RPECVD), differs from conventional PECVD in two ways; (a) not all of the process gases are subjected to plasma excitation; and (b) the deposition is done outside of the plasma region.We include an empirical model of the deposition process chemistry and discuss the use of infrared spectroscopy (IR) and Auger electron spectroscopy (AES) to characterize the local atomic structure of the deposited films.

Deposition and characterization of HfO2 high k dielectric films

2004 ◽  
Vol 19 (6) ◽  
pp. 1775-1782 ◽  
Author(s):  
Wai Lo ◽  
Arvind Kamath ◽  
Shreyas Kher ◽  
Craig Metzner ◽  
Jianguo Wen ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Deposition Process ◽  
Dielectric Materials ◽  
Growth Conditions ◽  
Oxide Semiconductor ◽  
Dielectric Films ◽  
Equivalent Thickness ◽  
Vapor Deposition Technique

As the scaling of complementary metal-oxide-semiconductor (CMOS) transistors proceeds, the thickness of the SiO2 gate dielectrics shrinks rapidly and results in higher gate leakage currents. High k dielectric materials are acknowledged to be the possible solutions to this challenge, as their higher k values (e.g., 15–50) raise the physical thickness of the dielectrics that provide similar equivalent thickness of a thinner SiO2 film. In order for the high k materials to be applicable in CMOS devices, there should exist deposition technologies that can deposit highly uniform films over Si wafers with diameters as large as 200 mm. This report discusses the deposition process and the correlation between the growth conditions, structural and dielectric properties of HfO2, which is one of the most promising high k dielectric materials. Judging from the thickness uniformity, surface roughness, k value, and interfacial density of state of the HfO2 films, the metalorganic chemical vapor deposition technique was identified to be suitable for growing HfO2 films targeted at applications as CMOS gate dielectrics.

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

1998 ◽  
Vol 13 (2) ◽  
pp. 406-412 ◽  
Author(s):  
Christian A. Zorman ◽  
Shuvo Roy ◽  
Chien-Hung Wu ◽  
Aaron J. Fleischman ◽  
Mehran Mehregany
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Pressure Chemical ◽  
Temperature Deposition ◽  
Sic Films

X-ray diffraction, transmission electron microscopy, and Rutherford backscattering spectroscopy were used to characterize the microstructure of polycrystalline SiC films grown on as-deposited and annealed polysilicon substrates. For both substrate types, the texture of the SiC films resembles the polysilicon at the onset of SiC growth. During the high temperature deposition process, the as-deposited polysilicon recrystallizes without influencing the crystallinity of the overlying SiC. An investigation of the SiC/polysilicon interface reveals that a heteroepitaxial relationship exists between polysilicon and SiC grains. From this study, a method to control the orientation of highly textured polycrystalline SiC films has been developed.

Polyhydride Bonding Groups in PECVD Amorphous Si Thin Films.

1989 ◽  
Vol 165 ◽  
Author(s):  
B. N. Davidson ◽  
G. N. Parsons ◽  
C. Wang ◽  
G. Lucovsky
Keyword(s):  
Statistical Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Reaction Pathways ◽  
Process Chemistry ◽  
Scaling Relationship ◽  
Independent Variable ◽  
Amorphous Si ◽  
Glow Discharge Deposition

AbstractIn glow discharge deposition (GD) of a-Si:H alloys, the concentration of electronically-active defects increases as the incorporation of bonded hydrogen in polymerized dihydride groups, (SiH2)n increases. Since the fraction of dihydride groups increases strongly with decreasing substrate temperature (Ts), the incorporation of these bonding groups can only effectively be reduced by restricting Ts to about 230°C or higher. We have found that a-Si:H films produced by remote Plasma Enhanced Chemical Vapor Deposition (remote PECVD) are qualitatively different than the GD films in the following ways: 1) the amount of bonded hydrogen for Ts > 100°C is less by about a factor of two; and 2) the fraction of polyhydride bonding is also significantly less than the monohydride fraction for Ts > 100°C. We develop a statistical model that provides a basis for translating any process-dependent representation of data for the polyhydride fraction into a universally-obeyed scaling relationship in which the independent variable is [H]. The agreement between the statistical model and the experimental data, replotted as a function of [H], supports our observation that the fraction of polyhydride bonding is not determined simply by Ts, but is a function of the particular reaction pathways in the deposition process chemistry.

Crystallographic Texture and Phase Formation in Blanket TifriN/AICu Films

1998 ◽  
Vol 514 ◽  
Author(s):  
P. W. DeHaven ◽  
L. A. Clevenger ◽  
R. F. Schnabe ◽  
S. J. Weber ◽  
R. C. Iggulden ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Alloy Film ◽  
Al Alloy ◽  
Area Detector ◽  
Deposition Parameters ◽  
Temperature Deposition ◽  
20 Nm

ABSTRACTInterconnection metallization uses film stacks, often composed of thin (<10 nm) Ti, TiN, or Ti/TiN underlayer(s) with a thick (200–1000 nm) Al-alloy film deposited on top. The texture or preferred orientation in such film stacks has important implications for both processing and reliability. Earlier studies' have demonstrated the importance of the underlayers on Al texture; however, to date no systematic work has been done on the effect of processing conditions on underlayer texture. This study examines the effect of deposition parameters on the underlayer texture development as well as the effect of this underlayer texture on subsequently deposited Al-alloy films. Fiber plots were obtained for Ti <002> and <101> and Al <111> reflections for a series of 20 nm Ti/ 10 nm TiN/400 nm AlCu films using both a conventional Siemens D500 diffractometer with a pole figure attachment and a Siemens HI-STAR Area Detector system using Cu radiation from a rotating anode source. Because of overlap between the Al <111> and Ti <101> reflections, the Al was removed with a subtractive etch. In this way both the Al and underlayer film textures could be quantified. It was found that the Ti and Al-alloy film textures vary depending on the deposition temperature, deposition method and final film thickness. For example, an increase in the substrate temperature from 300° to 500°C caused the Ti film texture to change from <002> to <101>. Additionally, switching the TiN deposition process from physical vapor deposition (PVD) sputtering to chemical vapor deposition (CVD) in a Ti/TiN/AlCu film stack caused a degradation in the AlCu <111 > texture.

Studies of Pecvd and Ozone CVD Deposition Rate, Uniformity and Step Coverage

1994 ◽  
Vol 363 ◽  
Author(s):  
Xin Guo ◽  
J. Zhao ◽  
J. Qiao ◽  
A. Tabata ◽  
B. Pang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Deposition Rate ◽  
Silicon Oxide ◽  
Driving Forces ◽  
Semiconductor Industry ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Plasma Ionization ◽  
Plasma Enhanced Cvd ◽  
Almost All

AbstractChemical vapor deposition (CVD) has been used to deposit films such as silicon, silicon oxide, silicon nitride, tungsten, silicide, copper and titanium nitride in the semiconductor industry. The reaction driving forces for CVD are typically temperature for thermal CVD, plasma ionization for plasma enhanced CVD, or atomic oxygen for ozone CVD. In the recent years, plasma enhanced CVD (PECVD) and ozone CVD have found extensive applications in the semiconductor industry, due to the higher deposition rate and lower deposition temperature. For example, PECVD and ozone CVD are used to deposit almost all dielectric films such as silicon oxide and silicon nitride on a wafer. The dielectric films on wafers serve as insulating layers between conducting metal layers and as passivation layer on top of semiconductor devices.

Bonded Hydrogen in Silicon Oxide Thin Films Deposited By Remote Plasma Enhanced Chemical Vapor Deposition

1987 ◽  
Vol 98 ◽  
Author(s):  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Silicon Oxides ◽  
Oh Groups ◽  
Plasma Enhanced Cvd ◽  
Cvd Method ◽  
Sioh Group

ABSTRACTWe have deposited a range of silicon oxides by the Remote Plasma Enhanced CVD method. By varying gas mixtures and/or substrate temperature, it is possible to deposit films that are essentially stoichiometric SiO_, Si-deficient oxides which have OH groups but no SiH and Si-rich oxides which have SiH groups and no OH. This paper addresses three issues : (1) the nature of the infrared vibrations associated with the SiH and SiOH groups; (2) the use of D for H substitutions to study the vibrations in (1); and (3) the chemical origin of the SiOH group in the Si-deficient films.

Control of Bonded SiH in Silicon Oxides Deposited by Remote Plasma Enhanced CVD

1987 ◽  
Vol 105 ◽  
Author(s):  
D. V. Tsu ◽  
G. N. Parsons ◽  
G. Lucovsky ◽  
M. W. Watkins
Keyword(s):  
Silicon Oxide ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Plasma Region ◽  
Remote Plasma ◽  
Silicon Oxides ◽  
Hydrogenated Silicon ◽  
Plasma Enhanced Cvd ◽  
Amorphous Hydrogenated Silicon ◽  
Wide Range

AbstractThis paper describes Optical Emission Spectrocopy (OES) and Mass Spectrometry (MS) studies of the plasma region in the Remote Plasma Enhanced Chemical Vapor Deposition (PECVD) of amorphous hydrogenated silicon (a-Si:H) and silicon oxide thin films. In Remote PECVD, only the O2/He mixture is plasma excited, silane is introduced into the deposition chamber well below the plasma region. Deposition of films has been studied over a wide range of relative He and O2flows, between 100% He and 100% O2. The incorporation of SiH in the oxides derives from the same mechanism as the deposition of a-Si:H, i.e., a metastable He induced fragmentation of silane.

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

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