The Meyer-Neldel Relation and Analysis of the Field-Effect In Amorphous Silicon

1986 ◽  
Vol 70 ◽  
Author(s):  
Ruud E. I. Schropp ◽  
Jan Snijder ◽  
Jan F. Verwey
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Flat Band ◽  
Gate Bias ◽  
Flat Band Voltage ◽  
Conventional Analysis ◽  
First Time

ABSTRACTThe dependence of the conductance prefactor on the activation energy in accordance with the Meyer-Neldel relation has been observed in a-Si:H, by measuring the temperature dependence of the field-effect in a-Si:H thin-film transistors. The Meyer-Neldel rule is for the first time properly taken into account in the analysis of the field-effect, thereby considering the non-uniform shift of the Fermi-level as induced by the gate bias. The analysis also yields the flat-band voltage, which is an important parameter in the density of states evaluation. The density of states is shown to be considerably overestimated in conventional analysis.

Extraction Technique for Flat Band Voltage Using Multi-Frequency C – V Characteristics in Amorphous InGaZnO Thin-Film-Transistors

2020 ◽  
Vol 41 (12) ◽  
pp. 1778-1781
Author(s):  
Sungju Choi ◽  
Inseok Chae ◽  
Jingyu Park ◽  
Youngjin Seo ◽  
Chang Il Ryoo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Extraction Technique ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Amorphous Ingazno

Density of Deep Bandgap States in Amorphous Silicon From the Temperature Dependence of Thin Film Transistor Current

1994 ◽  
Vol 336 ◽  
Author(s):  
T. Globus ◽  
H. C. Slade ◽  
M. Shur ◽  
M. Hack
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Amorphous Silicon ◽  
Conduction Band ◽  
Energy Gap ◽  
Localized States ◽  
Flat Band ◽  
Gate Bias ◽  
Density Of Localized States ◽  
Wide Range

ABSTRACTWe have measured the current-voltage characteristics of amorphous silicon thin film transistors (a-Si TFTs) over a wide range of temperatures (20 to 160°C) and determined the activation energy of the channel current as a function of gate bias with emphasis on the leakage current and subthreshold regimes. We propose a new method for estimating the density of localized states (DOS) from the dependence of the derivative of activation energy with respect to gate bias. This differential technique does not require knowledge of the flat-band voltage (VFB) and does not incorporate integration over gate bias. Using this Method, we have characterized the density of localized states with energies in the range 0.15–1.2 eV from the bottom of the conduction band and have found a wide peak in the DOS in the range of 0.8–0.95 eV below the conduction band. We have also observed that the DOS peak in the lower half of the bandgap increases in magnitude and shifts towards the conduction band as a result of thermal and bias stress. We also measured an overall increase in the DOS in the upper half of the energy gap and an additional peak, centered at 0.2 eV below the conduction band, which appear due to the applied stress. These results are in qualitative agreement with the defect pool Model [1,2].

Field-Effect Conductance Activation Energy in Polycrystalline Silicon Thin-Film Transistors after Bias Stress

1996 ◽  
Vol 35 (Part 1, No. 4A) ◽  
pp. 2081-2084 ◽  
Author(s):  
Seo-Yoon Kim ◽  
Yoon-Ho Song ◽  
Kee-Soo Nam ◽  
Choochon Lee
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Silicon Thin Film ◽  
Bias Stress

Influence Of The Density of States and Series Resistance on the Field-Effect Activation Energy in a-Si:H TFT

1996 ◽  
Vol 424 ◽  
Author(s):  
Chun-Ying Chen ◽  
Jerzy Kanicki
Keyword(s):  
Activation Energy ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Series Resistance ◽  
Hydrogenated Amorphous Silicon ◽  
Two Dimensional ◽  
Source Current ◽  
Dimensional Simulation ◽  
Hydrogenated Amorphous

AbstractWe have proposed a new two-dimensional simulation model, which takes into account the density of states of hydrogenated amorphous silicon (a-Si:H) and temperature-dependence of the source/drain series resistances (Rs), to explain the dependence of the activation energy (Eact) of drain-source current (IDs) on gate-source bias (VGs) in a-Si:H thin-film transistors (TFTs). We found that the influence of series resistance cannot be ignored, else an overestimated Eact will result. The results of our simulation are in agreement with experimentally observed saturation of the Eact at higher VGs.

Flat Band Voltage Shifts in Pentacene Organic Thin-Film Transistors

2005 ◽  
Vol 44 (No. 47) ◽  
pp. L1414-L1416 ◽  
Author(s):  
Sung-Jin Kim ◽  
Myeong-Seob So ◽  
Min Chul Suh ◽  
Ho-Kyoon Chung
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Flat Band ◽  
Organic Thin Film ◽  
Flat Band Voltage
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