Furnace Annealed Thin Films of Plasma Enhanced Chemical Vapor Deposited Titanium Borides on Silicon

1986 ◽  
Vol 71 ◽  
Author(s):  
L. M. Williams
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Titanium Borides ◽  
Chemical Vapor Deposited ◽  
Diffraction Peaks ◽  
By Products ◽  
Deposited Films ◽  
Anneal Time

AbstractThin films of titanium borides, deposited onto silicon substrates at 600 °C using plasma enhanced chemical vapor deposition, were annealed in a furnace at temperatures from 700 °(C to 990 °C. Structural properties and electronic properties were measured for the annealed films and the asdeposited films for comparison. Sheet resistances for the films show about a 35% decrease after anneals at 990 °(C. The reduction in sheet resistance appears to be relatively insensitive to the length of the anneal time. X-ray diffraction spectra of the as-deposited films show no peaks that are attributable to crystalline titanium borides; however, there are diffraction peaks that are believed to be caused by products from reactions between the titanium borides and the silicon substrate during deposition. There is evidence that crystalline titanium diboride may start to form during the anneal at 990 °C.

Synthesis and Selected Micro-Mechanical Properties of Titanium Nitride Thin Films by the Pyrolysis of Tetrakis Titanium in Ammonia.

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
L. Riester
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Chemical Vapor Deposited

AbstractThin films of titanium nitride were chemical vapor deposited on (100)-oriented single-crystal silicon substrates from tetrakis (dimethylamino) titanium, Ti((CH3)2N)4, and ammonia gas mixtures in a cold-wall reactor at 623 K and 655 Pa. The films were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron spectroscopy. The nano-scale hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient against unlubricated, type- 440C stainless steel was determined using a computer-controlled friction microprobe to be ∼0.43.

The Sensitivity of V2O5:Sm2O3 Thin Films against NO2 Toxic Gas

2021 ◽  
Vol 19 (3) ◽  
pp. 69-77
Author(s):  
A.J. Noori ◽  
R.A. Ahmed ◽  
I.M. Ibrahim
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Homogeneous Distribution ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Method ◽  
Operation Temperature ◽  
Best Response ◽  
Diffraction Peaks ◽  
P Type

Vanadium oxide V2O5 thin films with variation doping ratios of Sm2O5 (2, 4, 6, and 8 % wt.) on corn glass and p- type silicon substrates were prepared by pulsed laser method. The X-ray diffraction peaks for V2O5 decreases with doping ratio of Sm2O3. FESEM images for V2O5 and doped thin films illustrates clusters with a homogeneous distribution in nano scale. The energy gap varied upon the increment of doping concentration, starting from 2.610 eV to 2.7 eV. Gas sensor measurement of pure and doped V2O5 demonstrated a sensitivity to NO2 gas, and the sensitivity expanded upon the increment of operation temperature. The greatest sensitivity was found to be about 99%, while best response time of 10s and recovery time of 18s were recorded using the 4% Sm2O3 sample at 50 °C.

Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications

2000 ◽  
Vol 637 ◽  
Author(s):  
F. Niu ◽  
A.R. Teren ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Insulating Layer ◽  
Ferroelectric State ◽  
Transmission Electron ◽  
Electro Optic ◽  
Metal Organic ◽  
Mgo Layers

AbstractEpitaxial ferroelectric BaTiO3 thin films have been developed as a material for microphotonics. Efforts have been directed toward developing these materials for thin film electro-optic modulators. Films were deposited by metalorganic chemical vapor deposition (MOCVD) on both MgO and silicon substrates. The electro-optic properties of the thin films were measured. For BaTiO3 thin films grown on (100) MgO substrates, the effective electro-optic coefficient, reff depended on the magnitude and direction of the electric field. Coefficients as high as 260 pm/V have been measured. Investigation of BaTiO3 films on silicon has been undertaken. Epitaxial BaTiO3 thin films were deposited by MOCVD on (100) MgO layers grown on silicon (100) substrates by metal-organic molecular beam epitaxy (MOMBE). The MgO serves as the low index optical cladding layer as well as an insulating layer. X-ray diffraction and transmission electron microscopy (TEM) indicated that BaTiO3 was epitaxial with an orientational relation given by BaTiO3 (100)//Si (100) and BaTiO3[011]//Si [011]. Polarization measurements indicated that the BaTiO3 epitaxial films on Si were in the ferroelectric state.

Conductance in Microcrystalline BbxCx/Si Heterojunction Diodes

1992 ◽  
Vol 283 ◽  
Author(s):  
Sunwoo Lee ◽  
Thuong Ton ◽  
D. Zych ◽  
P. A. Dowben
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electronic Material ◽  
Boron Carbide ◽  
Band Gap ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Chemical Vapor Deposited ◽  
Heterojunction Diodes

ABSTRACTPlasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.

Low Volume Resistivity Chemical Vapor Deposited Boron Doped Polycrystalline Thin Diamond Film Growth on Sapphire

1996 ◽  
Vol 423 ◽  
Author(s):  
Hassan Golestanian ◽  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
T. Stacy ◽  
E. M. Charlson
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Volume Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Chemical Vapor Deposited ◽  
Low Volume ◽  
Diamond Thin Films

AbstractHot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film's volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.

STRUCTURE AND PHOTOLUMINESCENCE PROPERTIES OF SILICON OXYCARBIDE THIN FILMS DEPOSITED BY THE RF REACTIVE SPUTTERING

2011 ◽  
Vol 25 (22) ◽  
pp. 2983-2990 ◽  
Author(s):  
YINQIAO PENG ◽  
JICHENG ZHOU ◽  
XUQIANG ZHENG ◽  
BAOXING ZHAO ◽  
XIAOCHAO TAN
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Reactive Sputtering ◽  
Silicon Oxycarbide ◽  
Silicon Substrates ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposited Films ◽  
Sintered Silicon

Silicon oxycarbide ( SiCO ) thin films were prepared by the RF reactive sputtering technique on n-type silicon substrates with the target of sintered silicon carbide ( SiC ), and high purity oxygen was used as the reactant gas. The as-deposited films were annealed at temperatures of 600°C, 800°C, and 1000°C under nitrogen ambient, respectively. The films were characterized by scanning electron microscopy, Fourier transform infrared spectroscopy, X-ray diffraction and photoluminescence (PL) spectrophotometer. The results show that annealing temperature plays an important role in the structure and photoluminescence of the films. The temperature 600°C is the most favorable annealing temperature for SiO 2 crystallization and the formation of 6H- SiC crystal phase in the SiCO films. The intense PL peaks located at 375 nm and 470 nm are observed at room temperature. The origin of the PL was discussed.

scholarly journals Electrical and optical properties of spin-coated SnO2 nanofilms

2014 ◽  
Vol 32 (4) ◽  
pp. 729-736 ◽  
Author(s):  
Weronika Izydorczyk ◽  
Krzysztof Waczyński ◽  
Jacek Izydorczyk ◽  
Paweł Karasiński ◽  
Janusz Mazurkiewicz ◽  
...  
Keyword(s):  
Thin Films ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Different Temperatures ◽  
Sno2 Thin Films ◽  
Deposited Films ◽  
Nanocrystalline Thin Films

AbstractSnO2 nanocrystalline thin films have been deposited on oxidized silicon substrates by spin-coating from a precursor solution, followed by slow thermal annealing in oxygen atmosphere at different temperatures (500 to 900 °C). The precursor solution consisted of 1.0 to 2.0 M SnCl4·5H2O in isopropanol. It was shown that the concentration of the precursor solution, annealing temperature and heating rate had a significant effect on the structural, optical and electrical properties of the studied thin films. The topography of SnO2 thin films was examined by scanning electron microscopy (SEM). Furthermore, as-deposited films were characterized by X-ray diffraction (XRD), UV-Vis and impedance spectroscopy.

Residual Stress Variation in Polysilicon Thin Films

2006 ◽  
Author(s):  
Andrew J. Mueller ◽  
Robert D. White
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Compressive Stress ◽  
Chemical Vapor ◽  
Stress Variation ◽  
Wafer Curvature ◽  
Mechanical Methods ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Deposited Films

This paper compares the use of four mechanical methods for characterization of residual stress variation in low pressure chemical vapor deposited (LPCVD) polysilicon thin films deposited, doped, and annealed under different conditions. Stress was determined using buckling structures, vibrating microstructures, static rotating structures and the wafer curvature method. After deposition of 1.0 μm of polysilicon at 625°C and 588°C the stress in the wafers is 230 MPa compressive (stdev = 1.2 MPa) and 340 MPa compressive (stdev = 10.4 MPa), respectively. Deposition of 0.6 μm at 580°C results in a tensile stress of 66 MPa (stdev= 52 MPa). Following doping, all stresses are compressive. Boron doping of the 625°C and 588°C deposited films produces a compressive stress of 149 MPa (stdev= 28.6 MPa) and 100 MPa (stdev= 29.5 MPa). Phosphorous doping of the 588°C and 580°C deposited films produces a compressive stress of 54 MPa (stdev = 0.3 MPa) and 80 MPa (stdev= 5.3 MPa), respectively. Annealing through rapid thermal processing (RTP) at temperatures of 1000°C – 1100°C reduced the stresses by 20-50 MPa, but the stresses remained compressive. These values are measured using the wafer curvature method. Values obtained from the other microstructure methods agree with stresses determined by wafer curvature with the exception of the rotating structures which showed 20% lower stress readings.

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