Synthesis and Structural Characterization of Sol-Gel Derived Barium Zirconium Titanate Thin Films

2002 ◽  
Vol 718 ◽  
Author(s):  
A. Dixit ◽  
A. Savvinov ◽  
S.B. Majumder ◽  
R.S. Katiyar R. Guo ◽  
A.S. Bhalla
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Random Access ◽  
Zirconium Titanate ◽  
X Ray Diffraction ◽  
Homogeneous Microstructure ◽  
Single Crystalline ◽  
Crystalline Substrate ◽  
Wide Range ◽  
Barium Zirconium Titanate

AbstractBarium zirconium titanate (BZT) thin films are attractive candidates for dynamic random access memories and tunable microwave devices. In the present work a wide range of Zr doped BaTiO3 thin films have been prepared by sol-gel technique. X-ray diffraction and micro-Raman scattering studies confirmed the structural phases in the powder and film of BZT and various structural transitions of BaTiO3 as a function of different Zr content compared well with the published result on ceramics and single crystalline BZT. The deposited films had smooth, crackfree and homogeneous microstructure and Zr content has strong influence on the evolution of the microstructures of the films. Some selected compositions of these films were characterized in terms of their dielectric properties and phase transition behavior. BZT film with 20 at % Zr had a ferroelectric to paraelectric transition in the vicinity of room temperature. Efforts are underway to optimize the annealing condition and grow epitaxial BZT films, with various Zr contents, on a suitable single-crystalline substrate.

scholarly journals Nanostructure Analysis of Sol-gel PZT Thin Films Derived from Different Chemical Routes

2009 ◽  
Vol 15 (S3) ◽  
pp. 53-54
Author(s):  
Aiying Wu ◽  
P. M. Vilarinho
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Chemical Reactivity ◽  
Sol Gel ◽  
Random Access ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Metal Alkoxides ◽  
Pzt Thin Films ◽  
Wide Range

AbstractLead zirconate - lead titanate (PZT) materials are commercially important piezoelectric and ferroelectrics in a wide range of applications, such as data storage (dynamic access and ferroelectric random access memories) and sensing and actuating devices. PZT with the morphotropic phase boundary composition offers the highest piezoelectric response and at the present there are no fullydeveloped alternative materials to PZT. The importance of PZT associated with the continuous requirements of device miniaturization, imposes the development of high quality PZT thin films with optimized properties. Concomitantly due to the dependence of the final properties of thin films on the details of the microstructure a thoroughly analysis at the local scale of their microstructure is necessary. Sol-gel method, is one of the Chemical Solution Deposition techniques used to prepare oxide thin films, such as PZT. Starting from a solution, a solid network is progressively formed via inorganic polymerisation reactions. Most metal alkoxides used for sol-gel synthesis are highly reactive towards hydrolysis and condensation. Therefore their chemical reactivity has to be tailored via the chemical modification (or complexation) of metal alkoxides to avoid uncontrolled reactions and precipitation. For PZT sol gel thin film preparation, two chemical routes are frequently used depending on the nature of the molecular precursor, namely methotoxyethanol (MOE) route and diol-route.

Preparation and CO2 Gas Sensitive Properties of CuO-SrTiO3-Based Semiconductor Thin Films

2007 ◽  
Vol 280-283 ◽  
pp. 311-314 ◽  
Author(s):  
Yan Fei Gu ◽  
Hui Ming Ji ◽  
Bin Zhang ◽  
Ting Xian Xu
Keyword(s):  
Thin Films ◽  
Chelating Agents ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Good Resistance ◽  
Gas Sensitivity ◽  
X Ray ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Ft Ir

CuO-SrTiO3-based thin films were prepared by novel sol-gel technology on Al2O3 substrates using Cu(NO3)2, SrCl2 and TiCl4 as the starting materials, critic acid and ethylene glycol as chelating agents. CO2 sensing properties of the films were investigated. Structure characteristics of the sol and asgrown thin films were analyzed by FT-IR spectrum, X-ray diffraction and SEM. The results reveal that the films consisted of CuO phase and SrTiO3 phase have nanocrystalline microstructure at 750°C for 40 min. The modified CuO-SrTiO3 thin films exhibit good resistance-temperature and gas sensitivity properties in a wide range of temperature. The films exposed to 6% CO2 show that sensitivity are 32, and response and recover time are within 2 s at 250 °C operating temperature.

Investigations on the sol–gel-derived barium zirconium titanate thin films

2002 ◽  
Vol 56 (6) ◽  
pp. 933-940 ◽  
Author(s):  
A Dixit ◽  
S.B Majumder ◽  
A Savvinov ◽  
R.S Katiyar ◽  
R Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zirconium Titanate ◽  
Barium Zirconium Titanate

Preparation and Research of Ferroelectric Properties of Fabricated Thin Film by Doping La and Nd to Bi4Ti3O12

2011 ◽  
Vol 287-290 ◽  
pp. 2318-2321
Author(s):  
Shu Lan Guo ◽  
Jia Li ◽  
Xue Dong Xu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
Thin Film Thickness ◽  
Homogeneous Microstructure ◽  
X Ray ◽  
A Site

Ferroelectric thin films Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 of A-site substitution of Bi4Ti3O12 were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (00l) orientation. Pr values of Bi3.25La0.75Ti3O12 、Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.

Crystallographic Properties of Aluminum-Doped Barium Zirconium Titanate Thin Films by Sol Gel Process

2013 ◽  
Vol 789 ◽  
pp. 101-104 ◽  
Author(s):  
Rachmat Andika ◽  
Muhammad Hikam
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Ferroelectric Phase ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Lattice Parameter ◽  
Partial Substitution ◽  
Zirconium Titanate ◽  
Sol Gel Process ◽  
Barium Zirconium Titanate

We studied the crystallographic of Barium Zirconium Titanate thin films with Aluminum doped (BZAT). These films were prepared by sol-gel process and followed by spin coating. The sintering temperature is taken at 800°C and 900°C. We found that the crystallographic system of BZAT thin films have tetragonal structure with the lattice parameter slightly changed by various Aluminum partial substitution. When 0.01 Al moles added, the grain size of the films is 29.42 nm at 800°C. The sintering temperature 900°C increased the grain size into 50.95 nm. We also calculated the spontaneous polarization theoretically and we found the optimum value of BZT thin film with 0.01 mole Al heated at 800°C, is 0.143 C/m2. This way, we could predict that the film has ferroelectric phase.

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

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