Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs

2002 ◽  
Vol 743 ◽  
Author(s):  
M. Kuball ◽  
S. Rajasingam ◽  
A. Sarua ◽  
M. J. Uren ◽  
T. Martin ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Spatial Resolution ◽  
Cross Talk ◽  
Temperature Rise ◽  
Device Performance ◽  
Self Heating ◽  
Heating Effects ◽  
Device Reliability ◽  
Finger Width

ABSTRACTWe report on the in-situ measurement of temperature, i.e., self-heating effects, in multi-finger AlGaN/GaN HFETs grown on SiC substrates. Optical micro-spectroscopy was used to measure temperature with 1m spatial resolution. Thermal resistance (temperature rise per W/mm) was measured as a function of device pitch and gate finger width. There is significant thermal cross talk in multi-finger AlGaN/GaN HFETs and this needs to be seriously considered for device performance and ultimately device reliability. A comparison with theoretical modeling is presented. Uncertainties in modeling parameters currently make modeling less reliable than experimental temperature assessment of devices.

Optical Investigations of Temperature Effects in 14/16 nm FinFETs

2017 ◽  
Author(s):  
Ivo Vogt ◽  
Christian Boit ◽  
Tomonori Nakamura ◽  
Babak Motamedi
Keyword(s):  
Integrated Circuits ◽  
Temperature Effects ◽  
Photon Emission ◽  
Physical Parameters ◽  
Substrate Heating ◽  
Self Heating ◽  
Heating Effects ◽  
Device Reliability ◽  
Emission Microscopy ◽  
Ingaas Detector

Abstract This paper provides a detailed analysis on the optical detection of temperature effects in FinFETs via (spectral) photon emission microscopy (SPEM/PEM) with InGaAs detector and electro-optical frequency mapping (EOFM, similar to LVI) for 14/16 nm Qualcomm Inc. FinFETs. It analyzes physical parameters of the FinFETs such as electron temperature and the relation between signal curve and operating condition of the device by photon emission slopes and spectra. The paper also traces device self-heating effects within the FinFETs by means of EOFM signal courses. With EOFM it was possible to detect self-heating effects of the FinFETs providing a further method to estimate device and substrate heating. Results showed that it is possible to obtain valuable device parameter information (for example, electron temperatures and self-heating) via optical investigations (PEM/ EOFM), which are not accessible electrically in modern integrated circuits. This information adds further details to device reliability and functionality approximations.

Evidence of Reduced Self Heating with Partially Depleted SOI MOSFET Scaling

2006 ◽  
Vol 913 ◽  
Author(s):  
Georges Guegan ◽  
Romain Gwoziecki ◽  
Olivier Gonnard ◽  
Gilles Gouget ◽  
Christine Raynaud ◽  
...  
Keyword(s):  
Temperature Rise ◽  
Power Supply ◽  
Supply Voltage ◽  
Voltage Scaling ◽  
Power Supply Voltage ◽  
Soi Mosfet ◽  
Self Heating ◽  
Heating Effects ◽  
Supply Voltage Scaling ◽  
Successive Generations

AbstractThe temperature rise in SOI has been measured on two successive generations. This work shows that self-heating effects become less and less severe with both MOSFET and power supply voltage scaling.

scholarly journals Modeling of Temperature-Dependent Noise in Silicon Nanowire FETs including Self-Heating Effects

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
P. Anandan ◽  
N. Malathi ◽  
N. Mohankumar
Keyword(s):  
Thermal Resistance ◽  
Silicon Nanowires ◽  
Thermal Noise ◽  
Silicon Nanowire ◽  
Channel Length ◽  
Temperature Dependent ◽  
Short Channel ◽  
Self Heating ◽  
Heating Effects ◽  
Temperature Dependent Model

Silicon nanowires are leading the CMOS era towards the downsizing limit and its nature will be effectively suppress the short channel effects. Accurate modeling of thermal noise in nanowires is crucial for RF applications of nano-CMOS emerging technologies. In this work, a perfect temperature-dependent model for silicon nanowires including the self-heating effects has been derived and its effects on device parameters have been observed. The power spectral density as a function of thermal resistance shows significant improvement as the channel length decreases. The effects of thermal noise including self-heating of the device are explored. Moreover, significant reduction in noise with respect to channel thermal resistance, gate length, and biasing is analyzed.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Spectro-mechanical Characterization of Aromaticity and Maturity of Kerogens in Oil Shale at 6 nm Spatial Resolution

2018 ◽  
Author(s):  
Devon Jakob ◽  
Le Wang ◽  
Haomin Wang ◽  
Xiaoji Xu
Keyword(s):  
Spatial Resolution ◽  
Oil Shale ◽  
Infrared Imaging ◽  
Mechanical Characterization ◽  
Optical Diffraction ◽  
Chemical Compositions ◽  
Valuable Insight ◽  
Eagle Ford Shale

<p>In situ measurements of the chemical compositions and mechanical properties of kerogen help understand the formation, transformation, and utilization of organic matter in the oil shale at the nanoscale. However, the optical diffraction limit prevents attainment of nanoscale resolution using conventional spectroscopy and microscopy. Here, we utilize peak force infrared (PFIR) microscopy for multimodal characterization of kerogen in oil shale. The PFIR provides correlative infrared imaging, mechanical mapping, and broadband infrared spectroscopy capability with 6 nm spatial resolution. We observed nanoscale heterogeneity in the chemical composition, aromaticity, and maturity of the kerogens from oil shales from Eagle Ford shale play in Texas. The kerogen aromaticity positively correlates with the local mechanical moduli of the surrounding inorganic matrix, manifesting the Le Chatelier’s principle. In situ spectro-mechanical characterization of oil shale will yield valuable insight for geochemical and geomechanical modeling on the origin and transformation of kerogen in the oil shale.</p>

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